重离子辐照带有ECC的65 nm SRAM器件“伪多位翻转”特性研究

为了提高纠错编码（ECC）的有效性,先进的静态随机存储器（SRAM）多采用位交错结构。但是,在没有物理版图信息的情况下,位交错设计使得从辐照测试数据中提取出多单元翻转（MCU）变得更加困难。运用Bi离子辐照带有ECC的65 nm SRAM器件,研究了该款器件在重离子辐照下的敏感性。为"伪多位翻转（FMBU）"以及MCU的数据分析提供了理论指导和帮助,完善了判别MCU的基本法则。除此之外,研究结果表明,ECC的汉明编码对于纳米器件的效果不够理想。在未来的空间应用中,需考虑更高层次的编码算法来抵抗单粒子翻转。In order to improve the robustness of error-correcting codes (ECC), modern static random access memory (SRAM) always use bit-interleaving structure. However, in the absence of physical layout information, the bit-interleaving design makes it more difficult to extract the multiple-cell upset (MCU) from the test data. In this paper, the sensitivity of Bi ion irradiation was investigated in a 65 nm technology SRAM with ECC. The experimental results provide a theoretical guidance and help for the fake multiple-bit upset (FMBU) and MCU data analyzing, which improve and perfect the basic rules extracting MCU from the test data. In addition, the results show that the performance of hamming encoding is not ideal in Nano scale SRAM. In the future of space applications, it is necessary to consider more advanced algorithms to against SEU.     

Dependence of single event upsets sensitivity of low energy proton on test factors in 65 nm SRAM

In order to accurately predict the single event upsets(SEU) rate of on-orbit proton, the influence of the proton energy distribution, incident angle, supply voltage, and test pattern on the height, width, and position of SEU peak of low energy protons(LEP) in 65 nm static random access memory(SRAM) are quantitatively evaluated and analyzed based on LEP testing data and Monte Carlo simulation. The results show that different initial proton energies used to degrade the beam energy will bring about the difference in the energy distribution of average proton energy at the surface and sensitive region of the device under test(DUT), which further leads to significant differences including the height of SEU peak and the threshold energy of SEU. Using the lowest initial proton energy is extremely important for SEU testing with low energy protons. The proton energy corresponding to the SEU peak shifts to higher average proton energies with the increase of the tilt angle, and the SEU peaks also increase significantly. The reduction of supply voltage lowers the critical charge of SEU, leading to the increase of LEP SEU cross section. For standard 6-transitor SRAM with bit-interleaving technology,SEU peak does not show clear dependence on three test patterns of logical checkerboard 55 H, all 1, and all 0. It should be noted that all the SEUs in 65 nm SRAM are single cell upset in LEP testing due to proton's low linear energy transfer(LET) value.     

Total-Ionizing-Dose-Induced Body Current Lowering in the 130 nm PDSOI I/O NMOSFETs

The body current lowering effect of 130 nm partially depleted silicon-on-insulator(PDSOI) input/output(I/O)n-type metal-oxide-semiconductor field-effect transistors(NMOSFETs) induced by total-ionizing dose is observed and analyzed. The decay tendency of current ratio of body current and drain current I_b/I_d is also investigated.Theoretical analysis and TCAD simulation results indicate that the physical mechanism of body current lowering effect is the reduction of maximum lateral electric field of the pinch-off region induced by the trapped charges in the buried oxide layer(BOX). The positive charges in the BOX layer can counteract the maximum lateral electric field to some extent.     

Hot-Carrier Effects on Total Dose Irradiated 65 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors

The influence of total dose irradiation on hot-carrier reliability of 65 nm n-type metal-oxide-semiconductor fieldeffect transistors(nMOSFETs) is investigated.Experimental results show that hot-carrier degradations on irradiated narrow channel nMOSFETs are greater than those without irradiation.The reason is attributed to radiation-induced charge trapping in shallow trench isolation(STI).The electric field in the pinch-off region of the nMOSFET is enhanced by radiation-induced charge trapping in STI,resulting in a more severe hot-carrier effect.     

总剂量辐照效应对窄沟道SOI NMOSFET器件的影响

本文深入研究了130 nm Silicon-on-Insulator (SOI) 技术下的窄沟道n型metal-oxide-semiconductor-field-effect-transistor (MOSFET) 器件的总剂量辐照效应. 在总剂量辐照下, 相比于宽沟道器件, 窄沟道器件的阈值电压漂移更为明显. 论文利用电荷守恒定律很好地解释了辐照增强的窄沟道效应. 另外, 本文首次发现, 对于工作在线性区的窄沟道器件, 辐照产生的浅沟槽隔离氧化物(STI) 陷阱正电荷会增加沟道区载流子之间的碰撞概率和沟道表面粗糙度散射, 从而导致主沟道晶体管的载流子迁移率退化以及跨导降低. 最后, 对辐照增强的窄沟效应以及迁移率退化进行了三维器件仿真模拟, 仿真结果与实验结果符合得很好. 关键词： 总剂量效应(TID) 浅沟槽隔离(STI) 氧化层陷阱正电荷 SOI MOSFET     

铁磁/反铁磁双层膜系统中交换各向异性及其厚度依赖性

研究铁磁/反铁磁双层膜系统中交换偏置场和矫顽场的冷却磁场依赖性.结果表明,随着冷却磁场的增加,交换偏置场由负值向正值转变.在转变点附近,矫顽场有-个特别的增强,并达到最大值.结果同相关实验-致.研究铁磁层和反铁磁层厚度对交换偏置场和矫顽场的影响.发现,正负交换偏置场和矫顽场随着铁磁层厚度的增大而减小,但随反铁磁层厚度的变化关系复杂.在正交换偏置场的情形,随反铁磁层厚度的增大,交换偏置场增强,矫顽场减弱;在负交换偏置场的情形,随反铁磁层厚度的增大,交换偏置场减弱,矫顽场增强.     

65 nm互补金属氧化物半导体场效应和晶体管总剂量效应及损伤机制

对65 nm互补金属氧化物半导体工艺下不同尺寸的N型和P型金属氧化物半导体场效应晶体管(NMOSFET和PMOSFET)开展了不同偏置条件下电离总剂量辐照实验.结果表明:PMOSFET的电离辐射响应与器件结构和偏置条件均有很强的依赖性,而NMOSFET表现出较强的抗总剂量性能;在累积相同总剂量时,PMOSFET的辐照损伤远大于NMOSFET.结合理论分析和数值模拟给出了PMOSFET的辐射敏感位置及辐射损伤的物理机制.     

重离子碰撞中原子核阻止的同位旋效应

利用含有3种对称势形式的同位旋相关的量子分子动力学,研究了中能重离子碰撞中原子核阻止的同位旋效应和随入射道条件的系统演化过程.计算结果表明,原子核阻止灵敏地依赖束流能量、碰撞参数、碰撞系统的质量和核子–核子碰撞截面的同位旋相关性,而3种对称势和碰撞系统的中质比对它的影响不很明显,但在大约费米能量以下能区,原子核阻止同时依赖于介质中核子–核子碰撞截面和对称势.故认为在费米能量以上能区直至150MeV/u,原子核阻止是提取介质中核子–核子碰撞截面的一个新的物理观测量.     

部分耗尽SOI MOSFET总剂量效应与偏置状态的关系

实验表明SOI MOSFET掩埋氧化层中的总剂量辐射效应与辐射过程中的偏置状态有关. 对诱发背沟道泄漏电流的陷阱电荷进行了研究. 建立一个数值模型来模拟不同偏置下陷进电荷的建立, 它包括辐射产生的载流子复合和俘获的过程. 模拟结果与实验结果相符, 解释了总剂量辐射效应受偏置状态影响的机理.     

Impact of incident direction on neutron-induced single-bit and multiple-cell upsets in 14 nm FinFET and 65 nm planar SRAMs

Based on the BL09 terminal of China Spallation Neutron Source (CSNS), single event upset (SEU) cross sections of 14 nm fin field-effect transistor (FinFET) and 65 nm quad data rate (QDR) static random-access memories (SRAMs) are obtained under different incident directions of neutrons: front, back and side. It is found that, for both technology nodes, the "worst direction" corresponds to the case that neutrons traverse package and metallization before reaching the sensitive volume. The SEU cross section under the worst direction is 1.7-4.7 times higher than those under other incident directions. While for multiple-cell upset (MCU) sensitivity, side incidence is the worst direction, with the highest MCU ratio. The largest MCU for the 14 nm FinFET SRAM involves 8 bits. Monte-Carlo simulations are further performed to reveal the characteristics of neutron induced secondary ions and understand the inner mechanisms.     

铁磁/反铁磁双层膜中交换偏置及矫顽场的温度特性研究

讨论了铁磁-反铁磁双层膜中交换偏置和矫顽场随温度变化的关系。在本模型中,温度的依赖性来源于系统态的热激发以及相关磁学参量的温度依赖性。数值结果显示:低温下,交换偏置和矫顽场随温度的升高而减少,但是随着界面的交换耦合的增强或铁磁层各向异性的减少,其交换偏置变得平坦。随着温度的升高,交换偏置减少直至零;而矫顽场却达到峰值后再减为零。这些结果与实验结果定性一致。根据数值计算结果,可以预见软的铁磁层耦合上硬的反铁磁层,在恰当的交换耦合强度下,可构建具有大的交换偏置、小矫顽场;并在某温度区几乎不随温度变化的磁存贮器件.     

Compositional Trends of Radiation-Induced Effects in Ternary Systems of Chalcogenide Glasses

The effect of γ-irradiation on the optical transmittance spectra of pseudobinary stoichiometric and non-stoichiometric cuts of ternary systems of chalcogenide glasses was studied. The application of chemical-bond approach is proposed to explain the features of compositional dependencies of radiation-induced effects in these materials. It is shown that free volume concept must be taken into consideration at the presence of different radiation-sensitive structural units. The creation processes of coordination defects connected with the formation of free volume and coupled with the capability of the constituent atoms to passivation are the main factors determining the magnitude of the radiation-induced effects in chalcogenide glasses.     

14 nm FinFET和65 nm平面工艺静态随机存取存储器中子单粒子翻转对比

使用中国散裂中子源提供的宽能谱中子束流,开展14 nm FinFET工艺和65 nm平面工艺静态随机存取存储器中子单粒子翻转对比研究,发现相比于65 nm器件,14 nm FinFET器件的大气中子单粒子翻转截面下降至约1/40,而多位翻转比例从2.2%增大至7.6%,源于14 nm FinFET器件灵敏区尺寸(80 nm×30 nm×45 nm)、间距和临界电荷(0.05 fC)的减小.不同于65 nm器件对热中子免疫的现象,14 nm FinFET器件中M0附近10B元素的使用导致其表现出一定的热中子敏感性.进一步的中子输运仿真结果表明,高能中子在器件灵敏区中产生的大量的射程长、LET值大的高Z二次粒子是多位翻转的产生诱因,而单粒子翻转主要来自于p,He,Si等轻离子的贡献.     

Bias Dependence in Spin-Polarized Tunneling of Ferromagnet/Ferromagnetic Insulator (Semiconductor)/Ferromagnet Junctions

Based on the nearly-free-electron approximation, the bias dependencies of electron transport properties of ferromagnet/ferromagnetic insulator (semiconductor)/ferromagnet junctions have been studied. Resonances appear in electron transmission probability. These resonances cause oscillations in the zero-temperature tunnel current and the resonances occur in tunnel conductance. Tunnel magnetoresistance (TMR) is an oscillatory function of bias. The TMR can reach a value as high as 100%. The bins dependencies of electron transport properties relate to the magnetic configurations of the junctions.     

Temperature Dependence of Exchange Bias and Coercivity in Ferromagnetic Layer Coupled with Polycrystalline Antiferromagnetic Layer

The temperature dependence of exchange bias and coercivity in a ferromagnetic layer coupled with an antiferromagnetic layer is discussed. In this model, the temperature dependence comes from the thermal instability of the system states and the temperature modulated relative magnetic parameters. Morever, the thermal fluctuation of orientations of easy axes of antiferromagnetic grains at preparing has been considered. From the present model, the experimental results can be illustrated qualitatively for available magnetic parameters. Based on our discussion, we can conclude that soft ferromagnetic layer coupled by hard antiferromagnetic layer may be very applicable to design magnetic devices. In special exchange coupling, we can get high exchange bias and low coercivity almost independent of temperature for proper temperature ranges.     

Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage

It is shown that the series expansion of the amplitude and variance of the hemispherical semiconductor detector signal in inverse bias voltage allows finding the Fano factor, the product of electron lifetime and mobility, the degree of inhomogeneity of the trap density in the semiconductor material, and the relative variance of the electronic channel gain. An important advantage of the proposed method is that it is independent of the electronic channel gain and noise.     

Training Effect and Hysteretic Behaviour of Angular Dependence of Exchange Bias in Co/IrMn Bilayers

The training effect and the hysteresis behaviour of the angular dependence of exchange bias are extensively investigated upon the variation of the IrMn layer thickness tXrMn in a series of Co/IrMn bilayers. When tIrMn is very small, both of them are negligible. Then they increase very sharply with increasing tUMn and then reach maxima at almost the same value OftXrMn. Finally they both decrease when tIrMn is further increased. The similar variation trends suggest that these phenomena arise from irreversible change of antiferromagnet spin orientations, according to the thermal activation model.     

A novel interconnect-optimal repeater insertion model with target delay constraint in 65nm CMOS

Repeater optimization is the key for SOC (System on Chip) interconnect delay design. This paper proposes a novel optimal model for minimizing power and area overhead of repeaters while meeting the target performance of on-chip interconnect lines. It also presents Lagrangian function to find the number of repeaters and their sizes required for minimizing area and power overhead with target delay constraint. Based on the 65 nanometre CMOS technology, the computed results of the intermediate and global lines show that the proposed model can significantly reduce area and power of interconnected lines, and the better performance will be achieved with the longer line. The results compared with the reference paper demonstrate the validity of this model. It can be integrated into repeater design methodology and CAD (computer aided design) tool for interconnect planning in nanometre SOC.     

超重核266Hs形成截面的入射道依赖

计算和比较了²⁶Mg+²⁴⁴Cm, ²⁷Al+²⁴³Am和³²S+²³⁸U3个反应系统的俘获截面和复合核²⁷⁰Hs形成截面. 在俘获截面计算中, 考虑了靶核形变效应. 穿越库仑势垒后, 反应系统由熔合谷进入不对称裂变谷. 只有越过不对称裂变谷中的条件鞍点的事件才进入复合核组态. 我们用考虑中子流动和径向运动的二参量Smoluchowski扩散方程来处理中间阶段的动力学过程. 此外, 还计算了经4n蒸发形成超重核²⁶⁶Hs的截面. 研究表明, 入射道的势垒分布, 中间阶段的条件鞍点高度对俘获截面, 复合核形成几率, 以及最终的超重核形成截面有显著影响.     

不同偏压下Zn1-xCdxSe-ZnSe超晶格室温电调制反射谱研究

首次研究了在室温和不同直流偏压下Zn_1-xCd_xSe-ZnSe超晶格结构的电调制反射谱(ER)的变化。当器件处于弱场范围时,随着电场的增加,ER谱的信号幅度增加,而线型不变;在强场区,随着电场的增加,ER谱的线型发生变化,激子跃迁能量红移,继续增加反向偏压出现来自于1c-2hh的禁戒跃迁,且其强度随反向偏压的增加迅速增加。不同偏压下组合超晶格结构的ER谱研究表明,势垒高度较低的超晶格结构中的激子较易受到电场的调制。