Flory radius of polymers in a periodic field: An exact analytic theory

We found an exact expression for the Flory radius R _F of Gaussian polymers placed in an external periodic field. This solution is expressed in terms of the two parameters η and a that describe the reduced strength of an external field and the period of the field to the polymer gyration radius ratio, respectively. R _F is found to be a decaying function of η for any values of a . Provided that the gyration radius is of the order of the period of an external field or less, the ground-state (GS) approximation of the exact result for R _F is shown to give qualitatively incorrect results. In addition to the “ground-state” contribution, the exact solution for R _F contains an additional term that is overlooked by the GS approximation. This term gives rise to the fact that R _F as a function of η exhibits power law behavior (rather than exponential decay obtained from the GS result) once η exceeds the threshold value η_con .     

Padé approximation methods applied to the intermolecular force series

The H(1s)-H⁺, He-He, H(1s)-H(1s) and H(1s)-H(2s) interactions are considered as model systems for investigating the use of the Padé approximation method in summing the R ^-1 intermolecular force series. Various Padé approximants and partial sums of the R ^-1 expansions of the second-order Coulomb interaction energies are compared with the corresponding non-expanded results for each interaction. The computations are based on Unsöld's average energy approximation and on exact results for the H(1s)-H interaction. The results indicate that the Padé approximation method is a simple, useful way to remove some of the difficulties associated with the slow rate of convergence of the R ^-1 force series but that it does not alleviate the problems associated with the asymptotic divergent nature of the series. The results for the H(1s)-H⁺ interaction illustrate a possible difficulty in using Unsöld's method in the calculation of interaction energies.     

Charge overlap effects dependence on the nature of the interaction

The He-He, He-H(1s), H(1s)-H(1s) and H(1s)-H(2s) interactions are considered as model systems for studying how charge overlap effects in second-order dispersion energies vary as a function of the nature of the interacting species. The non-expanded second-order energy and the corresponding multipole R ^-1 expansions, through all powers of R ^-1, are obtained for each interaction using Unsöld's average energy approximation. The results are used to discuss the limitations of the usefulness of the R ^-1 expansions.     

Effective stopping charges and stopping power calculations for heavy ions

In this study the model suggested by Sugiyama has been developed and applied for the calculation of the stopping powers for nonrelativistic heavy ions in various target materials. Sugiyama's model has been expanded to low and high energy regions in our work. Analytical expressions are obtained in the modified BB stopping power formula for the effective charge and effective mean excitation energies. In the modified LSS formula, a quasi-molecule criterion has been applied to both the projectiles and the target atoms. Electronic excitation contribution, S _e0, and quasi-molecule contribution, S _ei , to stopping power were found for a wide energy region. It is observed that in intermediate energy region both contributions have maxima. The stopping power due to excitation-ionization in the intermediate and higher energy region is found to be dominant, whereas quasi-molecule contribution is dominant in the lower energy region. The calculated results of stopping power are in good agreement with experimental data for various ions and targets within a few percent in a wide projectile energy range.     

Sources of 1/F noise in gallium arsenide IMPATT diodes

The quasistatic approximation is used to analyze 1/F noise in IMPATT diodes in the static and dynamic (self-oscillating) modes. Sources of 1/F noise are defined in accordance with the fluctuator model: allowance is made for fluctuations of the charge of traps and fluctuations of the electron drift velocity caused by their scattering by traps and metastable neutral centers. It is shown that the fluctuations of the voltage across the diode and the fluctuations of the oscillation frequency are mainly determined by the fluctuations of the trap charge, while the fluctuations of the oscillation amplitude are determined by scattering by neutral centers. A method is developed to determine the intensity of noise sources using the results of measurements of the fluctuations in the static and dynamic modes of IMPATT diodes and a method of checking the model as a whole is checked. Experimental results are presented and these show satisfactory agreement with the calculations. Zh. Tekh. Fiz. 67, 65–70 (August 1997)     

The potential energies of the Na** + He quasi-molecule

The special features of the behavior of the potential energy surfaces of the system comprising a highly excited A** atom and a neutral B atom with a filled electronic shell were thoroughly analyzed. This was done using the integral variant of theory combined with the generalized finite radius potential method correctly describing the scattering of a weakly bound electron by the B atom. The method allows P scattering to be taken into account. This scattering causes the additional splitting of potential energy surfaces into separate groups of interacting terms classified according to the projection m of the electron angular momentum l onto the quasimolecular axis. Calculations of the nl(^{2s + 1}Λ) state potential curves of the Na** + He quasi-molecule (n, l, and Λ are the principal quantum number, angular momentum, and its projection onto the molecular axis, and s is the spin of the system) were performed. The calculation results were compared to those obtained by other authors.     

Andreev-Lifshitz supersolid revisited for a few electrons on a square lattice. I

In 1969, Andreev and Lifshitz have conjectured the existence of a supersolid phase taking place at zero temperature between the quantum liquid and the solid. In this and a succeeding paper, we re-visit this issue for a few polarized electrons (spinless fermions) interacting via a U/r Coulomb repulsion on a two dimensional L×L square lattice with periodic boundary conditions and nearest neighbor hopping t. This paper is restricted to the magic number of particles N = 4 for which a square Wigner molecule is formed when U increases and to the size L = 6 suitable for exact numerical diagonalizations. When the Coulomb energy to kinetic energy ratio r _s = UL/(2t ) reaches a value r _s ^F ≈ 10, there is a level crossing between ground states of different momenta. Above r _s ^F, the mesoscopic crystallization proceeds through an intermediate regime ( r _s ^F < r _s < r _s ^W ≈ 28) where unpaired fermions with a reduced Fermi energy co-exist with a strongly paired, nearly solid assembly. We suggest that this is the mesoscopic trace of the supersolid proposed by Andreev and Lifshitz. When a random substrate is included, the level crossing at r _s ^F is avoided and gives rise to a lower threshold r _s ^F(W) < r _s ^F where two usual approximations break down: the Wigner surmise for the distribution of the first energy excitation and the Hartree-Fock approximation for the ground state. Received 21 June 2002 Published online 14 February 2003 RID="a" ID="a"e-mail: jpichard@cea.fr     

Electron impact excitation collision strengths for neon-like Ni XIX calculated using the relativistic R-matrix method

In a recent paper [Pramana — J. Phys. 64, 129 (2005)] results have been presented for electron impact excitation collision strengths for transitions among the fine-structure levels of the 2s²2p⁶ and 2s²2p⁵3s configurations of Ni XIX. In this paper we demonstrate through an independent calculation with the relativistic R-matrix code that those results are unreliable and the conclusions drawn are invalid.     

Electronic topological transition in an <Emphasis Type="Italic">n</Emphasis>-BiSb semiconductor alloy in the quantum limit range of magnetic fields for H‖<Emphasis Type="Italic">C</Emphasis><Subscript>2</Subscript>

The galvanomagnetic properties of single-crystal samples of the Bi_0.93Sb_0.07 semiconductor alloy with the electron density n = 1.6 × 10¹⁷ cm⁻³ in magnetic fields up to 14 T at T = 1.6 K have been investigated. The resistivity ρ and Hall coefficient R have been measured as functions of the magnetic field directed along the binary axis of a crystal for a current flowing through a sample along the bisector axis; i.e., the components ρ₂₂ and R _{32, 1} have been measured. The strong anisotropy of the electron spectrum of the samples makes it possible to separately observe quantum oscillations of the magnetoresistance ρ₂₂(H) for H ‖ C ₂ in low magnetic fields for two equivalent ellipsoids with small extremal cross sections (secondary ellipsoids) and in high magnetic fields for electrons of the ellipsoid with a large extremal cross section (main ellipsoid). An increase in the energy of the electrons of secondary ellipsoids in the quantum limit magnetic fields is accompanied by the flow of electrons to the main ellipsoid; i.e., an electronic topological transition occurs from the three-valley electron spectrum to the single-valley one. After the flow stops, the Fermi energy E _F increases from 18 meV to 27.8 meV. With an increase in the quantizing magnetic field, the Fermi energy of the electrons decreases both in the region of quantum oscillations of the resistance that are attributed to the electrons of the secondary ellipsoids and in the region of oscillations associated with the electrons of the main ellipsoid. The Hall coefficient R _{32, 1} decreases in high magnetic fields; this behavior indicates the absence of the electron magnetic freezing effect.     

Ionization of barium through a coherent excitation of two bound intermediate states

We have investigated theoretically the asymmetrical photoionization yields into the 6s _1/2, 5d _3/2 and 5d _5/2 continuum channels of atomic barium observed by Wang, Chen and Elliott [Phys. Rev. Lett. 77, 2416 (1996)] in the study of coherent control through two-color resonant interfering paths. The atomic parameters obtained from a theoretical approach based on a combination of jj-coupled eigenchannel R-matrix and Multichannel Quantum Defect Theory are used to analyze the photoionization spectra from the and 6s7p states with polarized light beams. The studied energy range includes the 6p7p autoionizing resonances. The dynamics of the two-color photoionization is governed by the coherent excitation of the 6s6p and intermediate states. This excitation is described as an adiabatic process in the rotating wave approximation. The influence of the radiative decay, spatial distribution of the intensities of the laser beams and hyperfine interaction is discussed. Received 28 September 1999     

Perturbation of atomic energy levels by a metal surface

The energy level shifts of one-electron atomic particles H, He⁺, Li⁺⁺, etc. which interact with a metal surface have been investigated. In the approximation of image charges, an operator describing perturbations of atomic levels has been obtained. By numerically solving the Schro dinger equation, we have calculated energy levels of H(1s), H*(n=2), and C⁵⁺(n) as functions of the distance between an atom and surface. Asymptotic behavior of atomic levels at large distances from the surface has been studied. The linear Stark effect for excited states, which was earlier mentioned by A. V. Chaplik, has been found and investigated in detail. Zh. éksp. Teor. Fiz. 116, 236–256 (July 1999)     

Random walk with persistence

The exact analytic result is obtained for the Fourier transform of the generating functionF(R,s)= _n=0 s ⁿ P(R,n), whereP(R,n) is the probability density for the end-to-end distanceR inn steps of a random walk with persistence. The moments R ²(n), R ⁴(n), and R ⁶(n) are calculated and approximate results forP(R,n) and R ^–1(n) are given.     

Excitation of intrinsic defects in ionic crystals by high-power optical and electron beams

The efficiency of excitation and recharging of intrinsic defects by hot charge carriers has been investigated in ionic crystals acted on by high-power optical and electron beams. The interaction cross sections of hot electrons and holes with intrinsic lattice sites and F _n -type defects (n=1,2) are shown to be commensurate. It is also shown that the potential of the intracrystalline field in the vicinity of F and F ₂ centers is nearly regular. Fiz. Tverd. Tela (St. Petersburg) 40, 1030–1035 (June 1998)     

Production of a highly polarized sodium atomic beam

Two experimental techniques for preparing atoms in selected states were combined in order to obtain a highly polarized sodium beam: Firstly state selection by an inhomogeneous magnetic field and secondly optical pumping with laser light. This results in a dominating population of the 3s ² S _1/2 ground state levelF=2M _F=+2 (or alternativelyF=2M _F=−2) corresponding to high electron as well as nuclear spin polarization. Polarization values of 0.85±0.05 were easily obtained. The sign of the polarization can be reversed by changing the light polarization. The method can also be applied to other atoms. In addition, it is demonstrated that the optical pumping process allows a determination of the spin-selectivity of hexapole magnets.     

Relativistic calculations of electronic excitation probabilities in U<Superscript>92+</Superscript>-U<Superscript>91+</Superscript>(1<Emphasis Type="Italic">s</Emphasis>) collisions in the monopole approximation

Heavy ion collisions U⁹²⁺-U⁹¹⁺(1s) at a 6 MeV incident particle energy per nucleon are considered. The wave function of the electron was determined by solving the Dirac time-dependent equation in a central field, which is the sum of the potential of the target nucleus and the potential of the incident nucleus taken in the monopole approximation. The Dirac equation was solved using the basis set of Hermitian B-splines. The probabilities of remaining in the 1s target state were calculated as functions of the impact parameter.     

Pairing in one-dimensional antiferromagnetic superconductors in the presence of a homogeneous magnetic field

Assuming a one-dimensional like electron band and considering the free energy difference δF(= F_s?F_N) near the second order phase transition temperature, it is shown that for an antiferromagnetic superconductor in a homogeneous magnetic field (howsoever weak) the minimum of δF occurs when the state with spatially varying order parameter (having same period as the antiferromagnetic ordering) coexists with the usual BCS state.     

电子碰撞Ga,As, Pt,W和Au原子Lα X射线产生截面的理论计算

利用修改后的MBELL模型,研究了L壳层的相对论效应和离子效应对快电子碰撞电离Lα X射线产生截面的影响.通过在BELL模型中引入相对论效应和离子效应,基于相对论性的L壳层的电子碰撞电离截面的理论,计算了Ga,As,Pt,W和Au的L壳层电子碰撞电离截面,并将其转化成Lα X射线产生截面,计算结果表明考虑到相对论效应和离子效应后,修改后的MBELL的Lα X射线产生截面结果明显优于BELL的计算结果,并和最近的文献实验数值 关键词： 快电子 Lα射线')" href="#">Lα射线 电离截面 相对论效应     

Field dependence of the anomalous Hall effect coefficient of granular alloys with giant Magnetoresistance

It is shown theoretically that the anomalous Hall effect (AHE) coefficient R _s of magnetic granular alloys exhibiting giant magnetoresistance (GMR) depends strongly and, in the general case, nonmonotonically on the magnetic field as a result of the effect of the field on the character of the charge-carrier scattering and the AHE. The experimental data, presented by H. Sato, H. Hemmi, Y. Kobayashi et al., J. Appl. Phys. 76, 6919 (1994), on the field dependence R _s (H) in Co-Ag granular alloys at low temperatures are explained. The presence of a maximum in the field dependence |R _s (H)| in annealed Co-Ag alloys attests to the fact that skew scattering plays a dominant role in the formation of the AHE and that the main carriers of the AHE in these alloys are states whose spin polarization is directed oppositely to the magnetization. The presence of a minimum in this dependence for unannealed samples indicates nonuniformity of the granule size distribution. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 6, 481–484 (25 March 1997)     

Determination of landau fermi-liquid parameters in si-MOSFET systems

We analyze experimental data in order to evaluate Landau Fermi-liquid parameters. By using row data of recent Shubnikov-de Haas measurements, we derive, as a function of the electron density n _s, results for the compressibility mass of the charged two-dimensional electron gas. The compressibility mass is nearly equal to the transport mass even in the density region where the transport mass has the tendency to diverge. We conclude that Landau Fermi-liquid parameter F ₀^s (n _s) is nearly independent of electron density and close to zero. This result is derived for silicon (100) and silicon (111) surfaces. We also obtain the dependence of F ₁^s (n _s), determining the transport mass, and of F ₀^a (n _s), determining the spin susceptibility.