Piezoelectric coefficients of multilayer Pb(Zr,Ti)O<Subscript>3</Subscript> thin films

Sol–gel techniques were used to prepare thin films of Pb(Zr _x ,Ti_1−x )O₃ (PZT) with three different Zr/Ti ratios and a graded PZT film with three different compositional layers. A Michelson interferometer was used to measure the thickness strains due to an applied ac electric field. Effective d ₃₃ piezoelectric strain coefficients were computed from the experimental data. Interfacial pinning caused these coefficients to differ from the true ones. They were corrected for the pinning using both an analytical model and finite-element analysis. The corrected coefficients of the PZT (52/48) sample were in excellent agreement with values of bulk materials. The coefficients of the multilayer sample were very low, probably due to insufficient poling or domain switching.     

Nanoscale domain switching mechanism in Pb(Zr,Ti)O<Subscript>3</Subscript> thin film

Pb(Zr,Ti)O₃ (PZT) ferroelectric thin film was prepared by the sol-gel technique and crystallized with a (111) preferred orientation. The domain structure and polarization reversal behavior were investigated by using scanning force microscopy (SFM) piezoresponse mode at the nanometer scale. A step structure of approximately 30 nm in width was directly observed, which was formed during the polarization reversal process. The presence of the step structure reveals that the forward domain-growth mechanism is the dominant domain-switching process in our PZT thin films. Received: 6 August 2002 / Accepted: 9 August 2002 / Published online: 28 October 2002 RID="*" ID="*"Corresponding author. Fax: +86-21/5241-3122, E-mail: huarongzeng@163.net     

Electric and magnetic properties of CoFe<Subscript>2</Subscript>O<Subscript>4</Subscript>/Pb(Zr<Subscript>0.52</Subscript>Ti<Subscript>0.48</Subscript>)O<Subscript>3</Subscript> bilayer thin films prepared by pulsed-laser deposition

CoFe₂O₄ (CFO) thin film with highly (111)-preferential orientation was first deposited on the silicon substrate by a pulsed-laser deposition, and then Pb(Zr_0.52Ti_0.48)O₃ (PZT) layers were deposited with different oxygen pressures to form the bilayer CFO/PZT nanocomposite thin films. X-ray diffraction showed that the PZT preferential orientation was strongly dependant on the oxygen pressure. The smooth film surface was obtained after depositing the CFO and PZT layers. The bilayer thin films exhibit good ferromagnetic and ferroelectric properties, and a low leakage current density of 0.004 μA/cm² at 50 kV/cm. The leakage current density curves show loops for the electric polarized field when the electric field reverses. PACS 77.84.Lf; 75.80+q; 81.05.Zx; 81.15.Fg     

Ferroelectric domain structures in (Pb,La)(Zr,Ti)O<Subscript>3</Subscript> ceramics observed by scanning force microscopy in acoustic mode

Ferroelectric domain structures of transparent (Pb,La)(Zr,Ti)O₃ (PLZT) ceramics were investigated by scanning force microscopy (SFM) in the acoustic mode. The antiparallel domain configuration with a periodic distribution and local inhomogeneity in PLZT ceramics were clearly revealed with this new domain-imaging technique. The imaging mechanism of ferroelectric domains in SFM acoustic mode is discussed in terms of a local piezoelectric vibrator model. PACS 77.84.Dy; 77.80.Dj; 77.65.-j; 77.22.Ej; 07.79.-v     

Structural and dielectric characterization of Sr substituted Ba(Zr,Ti)O<Subscript>3</Subscript> based functional materials

Single phase Sr substituted BaZr_0.1Ti_0.9O₃ (also known as BZT) ceramics with a formula Ba_1-xSr_xZr_0.1Ti_0.9O₃ (x=0.10, 0.20, 0.30, 0.40 and 0.50) are prepared using a solid state reaction of mixed oxides at 1250 °C for 15 h. Analysis of XRD patterns of the ceramic powders show that Sr substitutes into Ba sites and reduces the lattice parameter. The powders are sintered at 1600 °C for 6 h to investigate the microstructure and functional properties. It is found that strontium substitution significantly modifies the microstructure and greatly influences the dielectric properties. The increase in Sr content reduces the ceramic grain size and results in spherical grains. With an increase in Sr content, the Curie temperature is lowered, and the relative permittivity maximum is increased and broadened. In Ba_1-xSr_xZr_0.1Ti_0.9O₃ with x=0.30, the relative permittivity reached a maximum of 26600 and with further increase of Sr content, the relative permittivity is lowered and the phase transition is found to be broad and diffused. The ferroelectric hysteresis characteristics are discussed in detail. PACS 77.84.-s; 77.80.Bh; 77.22.Ch; 77.84.Dy; 77.22.-d     

New half-metallic ferromagnets: Double perovskites SR(FeM)O<Subscript>3</Subscript> (M = Sn,Ti, Zr)

In calculations using the local spin density approximation, a new group of half-metallic ferromagnets is predicted. This group comprises double perovskites Sr₂FeSnO₆, Sr₂FeTiO₆, and Sr₂ FeZrO₆—systems with one type of magnetic ions that can be obtained by diluting the magnetic sublattice of SrFeO₃ with ions of nonmagnetic pⁿ and d⁰ metals.     

Optical studies of phase transitions in the (NH<Subscript>4</Subscript>)<Subscript>3</Subscript>Ti(O<Subscript>2</Subscript>)F<Subscript>5</Subscript> crystal

Polarization-optical study of twinning and measurements of the Raman spectra and birefringence in oxyfluoride (NH₄)₃Ti(O₂)F₅ were carried out over the temperature range 90–350 K. Phase transitions were detected at temperatures T ₀₁ = 266 K (second-order transition) and T ₀₂ = 225 K (first order). It is assumed that the crystal symmetry is changed as follows: Fm3m ? I4/mmm ? I4/m. Anomalies of the spectral parameters are established in the frequency range of internal vibrations of ammonium ions and Ti(O₂)F₅ complexes. An analysis of the results shows that the transition at T ₀₁ is likely due to small shifts of the tetrahedral groups from their position on the triad axis and that the transition at T ₀₂ is due to fluorine-oxygen ordering of Ti(O₂)F₅ complexes.     

Large optical nonlinearity in CaCu<Subscript>3</Subscript>Ti<Subscript>4</Subscript>O<Subscript>12</Subscript> thin films

CaCu₃Ti₄O₁₂ (CCTO) thin films were successfully prepared on LaAlO₃ substrates by pulsed laser deposition technique. We measured the nonlinear optical susceptibility of the thin films using Z-scan method at a wavelength of 532 nm with pulse durations of 25 ps and 7 ns. The large values of the third-order nonlinear optical susceptibility, χ ⁽³⁾, of the CCTO film were obtained to be 2.79×10⁻⁸ esu and 3.30×10⁻⁶ esu in picosecond and nanosecond time regimes, respectively, which are among the best results of some representative nonlinear optical materials. The origin of optical nonlinearity of CCTO films was discussed. The results indicate that the CCTO films on LaAlO₃ substrates are promising candidate materials for applications in nonlinear optical devices.     

Investigation of electrical and optical properties of ZnO thin films grown with O<Subscript>2</Subscript>/O<Subscript>3</Subscript> gas mixture

The electrical and optical properties of ZnO thin films grown with an O₂/O₃ gas mixture are compared with samples grown with pure oxygen gas. The ZnO films were grown on sapphire(0001) by pulsed laser deposition. The residual background carrier concentration is reduced by using an O₂/O₃ gas mixture as compared to pure molecular oxygen. In particular, a one order of magnitude reduction in residual background carrier density (6.15×10¹⁶ cm^-3) is achieved by using an O₂/O₃ gas mixture. The lower donor defect density is attributed to the generation of acceptor defects compensating for the residual donor defects. Photoluminescence results show that the deep level emission increased and the band edge emission decreased for the ZnO films grown with ozone, as compared to the samples grown with pure oxygen gas. PACS 73.61.Ga; 78.55Et; 81.05 Dz; 81.15.Fg     

Growth of Fe<Subscript>3</Subscript>O<Subscript>4</Subscript> films on the Si(111) surface covered by a thin SiO<Subscript>2</Subscript> layer

Magnetite polycrystalline films are grown by variously oxidizing a Fe film on the Si(111) surface covered by a thin (1.5 nm) SiO₂ layer. It is found that defects in the SiO₂ layer influence silicidation under heating of the Fe film. The high-temperature oxidation of the Fe film results in the formation of both Fe₃O₄ and iron monosilicide. However, the high-temperature deposition of Fe in an oxygen atmosphere leads to the growth of a compositionally uniform Fe₃O₄ film on the SiO₂ surface. It is found that such a synthesis method causes [311] texture to arise in the magnetite film, with the texture axis normal to the surface. The influence of the synthesis method on the magnetic properties of grown Fe₃O₄ films is studied. A high coercive force of Fe₃O₃ films grown by Fe film oxidation is related to their specific morphology and compositional nonuniformity.     

New crystal-structure phase in oxygen-nonstoichiometric double-layered perovskite NdBaCo<Subscript>2</Subscript>O<Subscript>5.72</Subscript>

The crystal structure of an NdBaCo₂O_5+δ(δ=0.72) solid solution with a layered perovskite structure is studied by neutron diffraction. It is found that a new crystal-structure phase with the cation-anion ratio 1: 1: 2: 5.75 forms in this solid solution. At the same time, oxygen vacancy ordering occurs in the plane of the rare-earth ion in the crystallographic position \(1c\left( {00\frac{1}{2}} \right)\) of the Pmmm space group. Oxygen vacancy diffusion along the crystallographic axes in the pane of the rare-earth element is also proposed as a mechanism for the formation of other crystal-structure phases found in double-layered cobaltites.     

Ferromagnetic resonance in (Bi,Tm)<Subscript>3</Subscript>(Fe,Ga)<Subscript>5</Subscript>O<Subscript>12</Subscript>(210) epitaxial films

It is shown that the ferromagnetic resonance spectrum in (Bi,Tm)₃(Fe,Ga)₅O₁₂ films grown in Gd₃Ga₅O₁₂(210) substrates has a single peak. The azimuthal and polar dependences of the resonance field possess 180° symmetry. The angular dependences of the ferromagnetic resonance line width and intensity are studied.     

Structural and electrical properties of 0.7Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>–0.3PbTiO<Subscript>3</Subscript> thin films grown on Ir/MgO buffered Si(100) substrates

Thin films of 0.7Pb(Mg_1/3Nb_2/3)O₃–0.3PbTiO₃ (PMN-PT) have been grown on Ir/MgO buffered Si(100) substrates at different substrate temperatures by pulsed laser deposition. Crystalline phases as well as preferred orientations in the PMN-PT films were investigated by X-ray diffraction analysis (XRD). The microstructure, dielectric and ferroelectric properties of PMN-PT film prepared at 650 °C were studied. The results show that the film prepared at 650 °C exhibits pure perovskite phase and single c-axis orientation. The dielectric constant and dissipation factor of the single c-axis oriented film are 1000 and 0.04 at a frequency of 1 kHz, while the remnant polarization and coercive field are about 13.0 μC/cm² and 100 kV/cm under an electric field of 480 kV/cm, respectively. PACS 81.15.Fg; 77.80.-e; 77. 22.Ej; 77.55.+f; 85.50.Gk     

Acoustic emission and thermal expansion of Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> and Pb(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>-PbTiO<Subscript>3</Subscript> crystals

The temperature dependence of the elongation per unit length for Pb(Mg_1/3Nb_2/3)O₃ crystals unannealed after growth and mechanical treatment is investigated in the course of thermocycling. It is revealed that this dependence deviates from linear behavior at temperatures below 350°C. The observed deviation is characteristic of relaxors, is very small in the first cycle, increases with increasing number n of thermocycles, and reaches saturation at n≥3. In the first cycle, a narrow maximum of the acoustic emission activity is observed in the vicinity of 350°C. In the course of thermocycling, the intensity of this maximum decreases and becomes zero at n>3. For (1?x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ crystals, the dependence of the temperature of this acoustic emission maximum on x exhibits a minimum. It is assumed that the phenomena observed are associated with the phase strain hardening due to local phase transitions occurring in compositionally ordered and polar nanoregions.     

Highly (100) oriented Pb(Zr<Subscript>0.52</Subscript>Ti<Subscript>0.48</Subscript>)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> films grown on amorphous substrates by pulsed laser deposition

Pb(Zr_0.52Ti_0.48)O₃ (PZT)/LaNiO₃ (LNO) thin films with highly (100) out of plane orientation were produced on SiO₂/Si(100) and alkaline earth aluminosilicate glass substrates by pulsed laser deposition (PLD). Orientations of both PZT and LNO films were evaluated using X-ray diffraction. The pure (100)-oriented PZT/LNO films were obtained under optimized deposition conditions. Time of flight-secondary ion mass spectrometry analysis showed that LNO could effectively block interdiffusion between the PZT films and the substrates. Fairly smooth surfaces of the PZT films with roughness of about 4 nm were observed using an atomic force microscope. Cross sectional examination revealed that the films grew in columnar grains. The PZT films grown on both SiO₂/Si and glass substrates demonstrated very good ferroelectric characteristic at room temperature with remnant polarization of up to 26 μC/cm². PACS 79.20.DS; 77.84.DY; 78.70.Ck     

Pulsed laser deposition of oriented barium ferrite (BaFe<Subscript>12</Subscript>O<Subscript>19</Subscript>) thin films

Barium ferrite (BaFe₁₂O₁₉) thin films have been deposited by pulsed laser deposition at 900 °C in 250 mTorr oxygen on Si substrates with Pt(111) underlayers. The barium ferrite films contained platelet grains and a small amount of acicular grains, with sizes of 300 nm and 80×300 nm, respectively, and had a surface roughness of 11 nm. Vibrating-sample magnetometer measurements indicated that the BaFe₁₂O₁₉ films have some perpendicular orientation, with a perpendicular squareness of 0.64 and an in-plane squareness of 0.28. The saturation magnetization is about 190 emu/cc. The perpendicular and in-plane coercivities are 2.1 kOe and 1.6 kOe, respectively. PACS 75.50.Ss; 75.60.Ej; 75.70.Ak; 68.55.Ik     

Crystal-structure and magnetic phase transformations in solid solutions of BiFeO<Subscript>3</Subscript>-AFe<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>O<Subscript>3</Subscript> (A = Ca,Sr, Ba,Pb)

Solid solutions of Bi_{1 ? x} A _x (Fe_{1 ? x/2}Nb _x/2)O₃, where A = Ca, Ba, and Pb, are obtained and their crystal structure and magnetic properties are investigated. It is shown that for A = Ca and x ≈ 0.15, the symmetry of the unit cell changes from rhombohedral (space group R3c) to orthorhombic (Pbnm). The transformation leads to the emergence of spontaneous magnetization due to the Dzyaloshinskii-Moriya interaction. Solid solutions with A = Pb remain rhombohedral up to a concentration of x = 0.3. Spontaneous magnetization sharply increases in the compound with x ≈ 1 at low temperatures and is due to the formation of the spin-glass component.     

Domain dynamics in (210)-oriented single-crystal (Bi,Y,Lu,Pr)<Subscript>3</Subscript>(Fe,Ga)<Subscript>5</Subscript>O<Subscript>12</Subscript> films

Using high-speed photography, dynamic magnetic structures are studied in Bi-containing (210)-oriented single-crystal films of (Bi,Y,Lu,Pr)₃(Fe,Ga)₅O₁₂ grown through liquid-phase epitaxy from an overcooled solution in the melt on (Gd,Ga)₃(Mg,Zr,Ga)₅O₁₂ substrates. At various temperatures, the ranges of pulsed magnetic fields are determined in which unidirectional anisotropy of domain wall velocity and spatial distortions of moving domain walls are observed.     

Electrical properties of Sr<Subscript>3</Subscript>Bi<Subscript>4</Subscript>Ti<Subscript>6</Subscript>O<Subscript>21</Subscript> thin films

Highly c-axis-oriented Sr₃Bi₄Ti₆O₂₁ (SBTi) thin films were fabricated on Pt-coated Si substrates by pulsed laser deposition (PLD). The structures were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). No peaks of SrTiO₃ (STO) could be detected in the XRD pattern, indicating the existence of the SBTi single phase. Good ferroelectric hysteresis loops of the films with Pt electrodes were obtained. With an applied field of 400 kV/cm, the measured remanent polarization (P_r) and coercive field (E_c) values were 4.1 C/cm² and 75 kV/cm respectively. The films showed little fatigue after 2.22×10⁹ switching cycles: the nonvolatile polarizations decreased by less than 5% of the initial values. The dielectric constant and the loss tangent of the films were measured to be 363 and 0.04 at 100 kHz. These results might be advantageous for nonvolatile ferroelectric random access memory (NVFRAM) and dynamic random access memory (DRAM). PACS 77.84.Dy; 77.22.-d; 68.55.Jk     

Phenomenological description of phase transitions in thin BaTiO<Subscript>3</Subscript> films

Phase transitions in thin epitaxial films of BaTiO₃ are described phenomenologically in terms of Landau potentials with sixth-and eighth-order terms. It is established that the phase diagram depends on the electrostrictive constant Q ₁₂. The phase diagrams calculated for different values of Q ₁₂ available in the literature differ qualitatively. The dependence of the misfit strain of a film on the film tetragonality at room temperature is found, which makes it possible to determine the thermodynamic path in the phase diagram for a specific film. The dependences of the spontaneous polarization and dielectric constant of a film on the misfit strain at room temperature are constructed.