Nanostructured Bi(2-x)Cu(x)S3 bulk materials with enhanced thermoelectric performance

Nanostructured Bi(2-x)Cu(x)S(3) (x = 0, 0.002, 0.005, 0.007, 0.01, 0.03) thermoelectric polycrystals were fabricated by combining mechanical alloying (MA) and spark plasma sintering (SPS) methods. The effect of Cu content on the microstructure and thermoelectric property of Bi(2-x)Cu(x)S(3) bulk samples was investigated. It was found that the subtle tailoring of Cu content could reduce both the electrical resistivity and the thermal conductivity at the same time, and consequently enhancing the thermoelectric property. A low electrical resistivity of 1.34 × 10(-4)Ω m(-1) and a low thermal conductivity of 0.52 W m(-1) K(-1) were obtained for the Bi(1.995)Cu(0.005)S(3) sample at 573 K. The low thermal conductivity is supposed to be due to the nanoscopic Cu-rich regions embedded in the host matrix. A peak ZT value of 0.34 at 573 K was achieved for the Bi(1.995)Cu(0.005)S(3) composition, which is the highest value in the Bi(2)S(3) system reported so far.     

Thermoelectric properties of Yb(x)Eu(1-x)Cd2Sb2

The thermoelectric performance of EuCd(2)Sb(2) and YbCd(2)Sb(2) was improved by mixed cation occupation. The composition, structure, and thermoelectric properties of Yb(x)Eu(1-x)Cd(2)Sb(2) (x=0, 0.5, 0.75, and 1) have been investigated. Polycrystalline samples are prepared by direct reaction of the elements. Thermoelectric properties were investigated after densification of the materials by spark plasma sintering. Yb(x)Eu(1-x)Cd(2)Sb(2) crystallizes in the P3m1 space group. The lattice parameters increase with the europium content. These materials show low electrical resistivity, high Seebeck coefficient, and low thermal conductivity together with high carrier concentration and high carrier mobility. ZT values of 0.88 and 0.97 are obtained for Yb(0.5)Eu(0.5)Cd(2)Sb(2) and Yb(0.75)Eu(0.25)Cd(2)Sb(2) at 650 K, respectively.     

Type-I clathrate Ba8Ni(x)Si(46-x): phase relations, crystal chemistry and thermoelectric properties

The phase relations, crystal structure and thermoelectric properties of the type-I solid solution Ba(8)Ni(x)Si(46-x) were investigated. Based on X-ray diffraction, differential thermal analysis and electron probe microanalysis data, a partial phase diagram was constructed for the Si-rich part of ternary system Ba-Ni-Si at 800 °C. The solubility range of Ni in the clathrate-I phase at 800 °C was determined (2.9 ≤x≤ 3.8) and thermoelectric properties, namely electrical resistivity, Seebeck-coefficient and thermal conductivity, were measured in the temperature range from 300 to 850 K. A shift of the thermoelectric properties from a predominantly metallic to a more semiconducting behavior was observed for an increasing Ni-content. Density functional calculations revealed a significant decrease of the gap width in the density of states induced by the incorporation of Ni. Electrical resistivity and Seebeck coefficients for Ba(8)Ni(x)Si(46-x) with 3.3 ≤x≤ 3.8 have been modeled within the rigid band approximation.     

Enhanced high-temperature thermoelectric performance of Yb(14-x)Ca(x)MnSb11

The high temperature p-type thermoelectric material Yb(14)MnSb(11) has been of increasing research interest since its high temperature thermoelectric properties were first measured in 2006. Subsequent substitutions of Zn, Al, and La into the structure have shown that this material can be further optimized by altering the carrier concentration or by reduction of spin-disorder scattering. Here the properties of the Yb(14-x)Ca(x)MnSb(11) solid solution series where isovalent Ca(2+) is substituted for Yb(2+) will be presented. Crystals of the Yb(14-x)Ca(x)MnSb(11) solid solution series were made by Sn-flux (x = 2, 4, 6, 8) with the following ratio of elements: (14-x)Yb: xCa: 6 Mn: 11Sb: 86Sn, and their structures determined by single crystal X-ray diffraction. The density of the material significantly decreases by over 2 g/cm(3) as more Ca is added (from x = 1 to 8), because of the lighter mass of Ca. The resulting lower density is beneficial from a device manufacturing perspective where there is often a trade-off with the specific power per kilogram. The compounds crystallize in the Ca(14)AlSb(11) structure type. The Ca substitution contributes to systematic lengthening the Mn-Sb bond while shortening the Sb-Sb bond in the 3 atom linear unit with increasing amounts of Ca. Temperature dependent thermoelectric properties, Seebeck, electrical resistivity, and thermal conductivity were measured from room temperature to 1273 K. Substitution of Yb with Ca improves the Seebeck coefficient while decreasing the thermal conductivity, along with decreasing the carrier concentration in this p-type material resulting in an enhanced thermoelectric figure of merit, zT, compared to Yb(14)MnSb(11).     

Spinodal decomposition and nucleation and growth as a means to bulk nanostructured thermoelectrics: enhanced performance in Pb(1-x)Sn(x)Te-PbS

The solid-state transformation phenomena of spinodal decomposition and nucleation and growth are presented as tools to create nanostructured thermoelectric materials with very low thermal conductivity and greatly enhanced figure of merit. The systems (PbTe)(1-x)(PbS)(x) and (Pb(0.95)Sn(0.05)Te)(1-x)(PbS)(x) are not solid solutions but phase separate into PbTe-rich and PbS-rich regions to produce coherent nanoscale heterogeneities that severely depress the lattice thermal conductivity. For x > approximately 0.03 the materials are ordered on three submicrometer length scales. Transmission electron microscopy reveals both spinodal decomposition and nucleation and growth phenomena the relative magnitude of which varies with x. We show that the (Pb(0.95)Sn(0.05)Te)(1-x)(PbS)(x) system, despite its nanostructured nature, maintains a high electron mobility (>100 cm(2)/V x s at 700 K). At x approximately 0.08 the material achieves a very low room-temperature lattice thermal conductivity of approximately 0.4 W/m x K. This value is only 28% of the PbTe lattice thermal conductivity at room temperature. The inhibition of heat flow in this system is caused by nanostructure-induced acoustic impedance mismatch between the PbTe-rich and PbS-rich regions. As a result the thermoelectric properties of (Pb(0.95)Sn(0.05)Te)(1-x)(PbS)(x) at x = 0.04, 0.08, and 0.16 were found to be superior to those of PbTe by almost a factor of 2. The relative importance of the two observed modes of nanostructuring, spinodal decomposition and nucleation and growth, in suppressing the thermal conductivity was assessed in this work, and we can conclude that the latter mode seems more effective in doing so. The promise of such a system for high efficiency is highlighted by a ZT approximately 1.50 at 642 K for x approximately 0.08.     

Remarkable enhancement in thermoelectric performance of BiCuSeO by Cu deficiencies

A significant enhancement of thermoelectric performance in layered oxyselenides BiCuSeO was achieved. The electrical conductivity and Seebeck coefficient of BiCu(1-x)SeO (x = 0-0.1) indicate that the carriers were introduced in the (Cu(2)Se(2))(2-) layer by Cu deficiencies. The maximum of electrical conductivity is 3 × 10(3) S m(-1) for Bicu(0.975)Seo at 650 °C, much larger than 470 S m(-1) for pristine BiCuSeO. Featured with very low thermal conductivity (～0.5 W m(-1) K(-1)) and a large Seebeck coefficient (+273 μV K(-1)), ZT at 650 °C is significantly increased from 0.50 for pristine BiCuSeO to 0.81 for BiCu(0.975)SeO by introducing Cu deficiencies, which makes it a promising candidate for medium temperature thermoelectric applications.     

Nanostructured AgPb(m)SbTe(m+2) system bulk materials with enhanced thermoelectric performance

Nanostructured Ag0.8Pbm+xSbTem+2 (m = 18, x = 4.5) system thermoelectric materials have been fabricated by combining mechanical alloying (MA) and spark plasma sintering (SPS) methods followed by annealing for several days to investigate the effect on microstructure and thermoelectric performance. It was found that appropriate annealing treatment could reduce both the electrical resistivity and the thermal conductivity at the same time, consequently greatly enhancing the thermoelectric performance. A low electrical resistivity of 2 x 10-3 Ohm-cm and low thermal conductivity of 0.89 W m-1 K-1 were obtained for the sample annealed for 30 days at 700 K. The very low thermal conductivity is supposed to be due to the nanoscopic Ag/Sb-rich regions embedded in the matrix. A high ZT value of 1.5 at 700 K has been achieved for the sample annealed for 30 days.     

Influence of disorder-to-order transition on lattice thermal expansion and oxide ion conductivity in (Ca(x)Gd(1-x))(2)(Zr(1-x)M(x))2O7 pyrochlore solid solutions

The effect of simultaneous substitutions of Ca at A site and Nb or Ta at B site in pyrochlore-type solid solutions: (Ca(x)Gd(1-x))(2)(Zr(1-x)M(x))(2)O(7) (x = 0.1, 0.2, 0.3, 0.4, 0.5 and M = Nb or Ta) were studied by powder X-ray diffraction (XRD), FT NIR Raman spectroscopic techniques and transmission electron microscopy. The solid solutions were prepared by the conventional high-temperature ceramic route. The XRD results and Rietveld analysis revealed that the defect fluorite structure of Gd(2)Zr(2)O(7) progressively changed to a more ordered pyrochlore phase by simultaneous substitutions at A and B sites. Raman spectroscopy reveals the progressive ordering in the anion sublattice with simultaneous doping. High-resolution images and selected-area electron diffraction patterns obtained from TEM confirms the XRD and Raman spectroscopic results. High-temperature XRD studies show that the lattice expansion coefficient in these pyrochlore oxides is of the order of 10(-6) K(-1). Lattice thermal expansion coefficient increases with increase of disorder in pyrochlore oxides, and hence the variation of thermal expansion coefficient with composition is also a good indicator of disordering in pyrochlore-type oxides. The ionic conducting properties of the samples were characterised by impedance spectroscopy, and it was found that Nb-doped compositions show a considerable change in conductivity near the phase boundary of disordered pyrochlore and defect fluorite phases.     

Influence of a nano phase segregation on the thermoelectric properties of the p-type doped stannite compound Cu(2+x)Zn(1-x)GeSe4

Engineering nanostructure in bulk thermoelectric materials has recently been established as an effective approach to scatter phonons, reducing the phonon mean free path, without simultaneously decreasing the electron mean free path for an improvement of the performance of thermoelectric materials. Herein the synthesis, phase stability, and thermoelectric properties of the solid solutions Cu(2+x)Zn(1-x)GeSe(4) (x = 0-0.1) are reported. The substitution of Zn(2+) with Cu(+) introduces holes as charge carriers in the system and results in an enhancement of the thermoelectric efficiency. Nano-sized impurities formed via phase segregation at higher dopant contents have been identified and are located at the grain boundaries of the material. The impurities lead to enhanced phonon scattering, a significant reduction in lattice thermal conductivity, and therefore an increase in the thermoelectric figure of merit in these materials. This study also reveals the existence of an insulator-to-metal transition at 450 K.     

Crystal structures and thermoelectric properties of the series Tl(10-x)La(x)Te6 with 0.2 ≤ x ≤ 1.15

The tellurides Tl(10-x)La(x)Te(6) were synthesized from the elements in stoichiometric ratios at 873 K, followed by slow cooling. These materials are substitution variants of Tl(5)Te(3), crystallizing in space group I4/mcm, with lattice dimensions of a = 8.9220(4) ?, c = 13.156(1) ?, V = 1047.2(1) ?(3), for x = 1 (Z = 2). Increasing the La content occurs with an increase in the unit cell volume and the c axis, but a decrease of the a axis. Tl(5)Te(3) is a metallic compound, while Tl(9)LaTe(6) was calculated to be semiconducting. Correspondingly, the Seebeck coefficient increases with increasing x, while the electrical and thermal conductivity both decrease. The highest thermoelectric figure-of-merit determined thus far is 0.21 at 581 K for cold-pressed Tl(9)LaTe(6).     

Synthesis, structure, chemical stability, and electrical properties of Nb-, Zr-, and Nb-codoped BaCeO3 perovskites

We report the effect of donor-doped perovskite-type BaCeO(3) on the chemical stability in CO(2) and boiling H(2)O and electrical transport properties in various gas atmospheres that include ambient air, N(2), H(2), and wet and dry H(2). Formation of perovskite-like BaCe(1-x)Nb(x)O(3±δ) and BaCe(0.9-x)Zr(x)Nb(0.1)O(3±δ) (x = 0.1; 0.2) was confirmed using powder X-ray diffraction (XRD) and electron diffraction (ED). The lattice constant was found to decrease with increasing Nb in BaCe(1-x)Nb(x)O(3±δ), which is consistent with Shannon's ionic radius trend. Like BaCeO(3), BaCe(1-x)Nb(x)O(3±δ) was found to be chemically unstable in 50% CO(2) at 700 °C, while Zr doping for Ce improves the structural stability of BaCe(1-x)Nb(x)O(3±δ). AC impedance spectroscopy was used to estimate electrical conductivity, and it was found to vary with the atmospheric conditions and showed mixed ionic and electronic conduction in H(2)-containing atmosphere. Arrhenius-like behavior was observed for BaCe(0.9-x)Zr(x)Nb(0.1)O(3±δ) at 400-700 °C, while Zr-free BaCe(1-x)Nb(x)O(3±δ) exhibits non-Arrhenius behavior at the same temperature range. Among the perovskite-type oxides investigated in the present work, BaCe(0.8)Zr(0.1)Nb(0.1)O(3±δ) showed the highest bulk electrical conductivity of 1.3 × 10(-3) S cm(-1) in wet H(2) at 500 °C, which is comparable to CO(2) and H(2)O unstable high-temperature Y-doped BaCeO(3) proton conductors.     

Ag/Yb掺杂对Ca_3Co_(3.9)Cu_(0.1)O_(9-δ)热电性能的影响

采用溶胶凝胶及冷压方法,通过在Ca_3Co_(3.9)Cu_(0.1)O_(9-δ)体系中引入不同量的Ag~+或Yb~(3+)离子来调控体系的热电性能,制备了可在300~880 K下稳定存在且热电性能优良的陶瓷材料Ca_(3-x)Ag_xCo_(3.9)Cu_(0.1)O_(9-δ)(x=0.1,0.15,0.2,0.3)和Ca_(3-y)Yb_yCo_(3.9)Cu_(0.1)O_(9-δ)(y=0.05,0.1,0.2,0.3).通过X射线衍射(XRD)和扫描电子显微镜(SEM)等测试手段对产物进行了表征,结果显示所制备的样品纯度较高,晶粒均匀,晶粒间较致密.适量的Ag~+,Yb~(3+)离子取代Ca~(2+)离子固溶到晶体中使制备的双掺杂材料晶胞体积发生了变化,但并未引起晶体对称结构的变化.电阻率和Seebeck系数的表征结果说明双掺杂优化了载流子的浓度,随着温度的升高电阻率不断减小,Seebeck系数不断增大.经过计算可知Seebeck系数的增大还有电子有效质量的贡献.热导率表征结果显示双掺杂体系的热导率随着温度的升高而减小,其中声子热导依然起主要作用,这与单掺杂体系的结果一致.随着温度的升高,双掺杂样品Ca_(2.7)Ag_(0.3)Co_(3.9)Cu_(0.1)O_(9-δ)在880 K下ZT值达到最大,为0.2.     

Anisotropic thermoelectric properties of Bi1.9Lu0.1Te2.7Se0.3 textured via spark plasma sintering

Spark plasma sintering method was applied to prepare bulk n-type Bi_1.9Lu_0.1Te_2.7Se_0.3 samples highly textured along the 001 direction parallel to the pressing direction. The texture development is confirmed by X-ray diffraction analysis and scanning electron microscopy. The grains in the textured samples form ordered lamellar structure and lamellar sheets lie in plane perpendicular to the pressing direction. The average grain size measured along the pressing direction is much less as compared to the average grain size measured in the perpendicular direction (∼50 nm against ∼400 nm). A strong anisotropy in the transport properties measured along directions parallel and perpendicular to the pressing direction within the 290 ÷ 650 K interval was found. The specific electrical resistivity increases and the thermal conductivity decreases for the parallel orientation as compared to these properties for the perpendicular orientation. The Seebeck coefficient for both orientations is almost equal. Increase of the electrical resistivity is stronger than decrease of the thermal conductivity resulting in almost three-fold enhancement of the thermoelectric figure-of-merit coefficient for the perpendicular orientation (∼0.68 against ∼0.24 at ∼420 K). The texturing effect can be attributed to (i) recovery of crystal structure anisotropy typical for the single crystal Bi₂Te₃-based alloys and (ii) grain boundary scattering of electrons and phonons. An onset of intrinsic conductivity observed above T_d ≈ 410 K results in appearance of maxima in the temperature dependences of the specific electrical resistivity, the Seebeck coefficient and the thermoelectric figure-of-merit coefficient and minimum in the temperature dependence of the total thermal conductivity. The intrinsic conductivity is harmful for the thermoelectric efficiency enhancement since thermal excitation of the electron-hole pairs reduces the Seebeck coefficient and increases the thermal conductivity.     

Thermal Properties of K（Y1-xYbx）（WO4）2（x=0.098,0.196,0.294） Crystal

Thermal properties of pure KY(WO4)2 and K(Y1-xYbx)(WO4)2(x=0.098,0.196,0.294) crystals were investigated.The specific heat and thermal diffusivity of crystals were calculated at a range of 50～300 ℃.The calculated result shows that the specific heat and thermal diffusivity of K(Y1-xYbx)(WO4)2(x=0.098,0.196,0.294) crystals were slightly affected by the Yb3+ concentration.The thermal expansion coefficient of K(Y0.804Yb0.196)(WO4)2 crystals along x,y and z axes were determined to be 13.51,4.474 and 16.60×10-6 K-1,respectively.These results suggest the K(Y1-xYbx)(WO4)2(x=0.098,0.196,0.294) crystal as a laser crystal of low-middle power.     

Chemical Manipulation of Magnetic Ordering in Mn(1-x)Sn(x)Bi(2)Se(4) Solid-Solutions

Several compositions of manganese-tin-bismuth selenide solid-solution series, Mn(1-x)Sn(x)Bi(2)Se(4) (x = 0, 0.3, 0.75), were synthesized by combining high purity elements in the desired ratio at moderate temperatures. X-ray single crystal studies of a Mn-rich composition (x = 0) and a Mn-poor phase (x = 0.75) at 100 and 300 K revealed that the compounds crystallize isostructurally in the monoclinic space group C2/m (no.12) and adopt the MnSb(2)Se(4) structure type. Direct current (DC) magnetic susceptibility measurements in the temperature range from 2 to 300 K indicated that the dominant magnetic ordering within the Mn(1-x)Sn(x)Bi(2)Se(4) solid-solutions below 50 K switches from antiferromagnetic (AFM) for MnBi(2)Se(4) (x = 0), to ferromagnetic (FM) for Mn(0.7)Sn(0.3)Bi(2)Se(4) (x = 0.3), and finally to paramagnetic (PM) for Mn(0.25)Sn(0.75)Bi(2)Se(4) (x = 0.75). We show that this striking variation in the nature of magnetic ordering within the Mn(1-x)Sn(x)Bi(2)Se(4) solid-solution series can be rationalized by taking into account: (1) changes in the distribution of magnetic centers within the structure arising from the Mn to Sn substitutions, (2) the contributions of spin-polarized free charge carriers resulting from the intermixing of Mn and Sn within the same crystallographic site, and (3) a possible long-range ordering of Mn and Sn atoms within individual {M}(n)Se(4n+2) single chain leading to quasi isolated {MnSe(6)} octahedra spaced by nonmagnetic {SnSe(6)} octahedra.     

Recent progress in oxide thermoelectric materials: p-type Ca3Co4O9 and n-type SrTiO3(-)

Thermoelectric energy conversion technology to convert waste heat into electricity has received much attention. In addition, metal oxides have recently been considered as thermoelectric power generation materials that can operate at high temperatures on the basis of their potential advantages over heavy metallic alloys in chemical and thermal robustness. We have fabricated high-quality epitaxial films composed of oxide thermoelectric materials that are suitable for clarifying the intrinsic "real" properties. This review focuses on the thermoelectric properties of two representative oxide epitaxial films, p-type Ca 3Co 4O 9 and n-type SrTiO 3, which exhibit the best thermoelectric figures of merit, ZT (= S (2)sigma Tkappa (-1), S = Seebeck coefficient, sigma = electrical conductivity, kappa = thermal conductivity, and T = absolute temperature) among oxide thermoelectric materials reported to date. In addition, we introduce the recently discovered giant S of two-dimensional electrons confined within a unit cell layer thickness ( approximately 0.4 nm) of SrTiO 3.     

Effect of Sr content on the crystal structure and electrical properties of the system La2-xSrxNiO4+delta (0 <or=x<or= 1)

Materials formulated as La(2-x)Sr(x)NiO(4+delta) (0 相似文献   

Ag~+,Sr~(2+),Yb~(3+)双掺杂对Ca_3Co_4O_(9-δ)热电性能的影响

采用溶胶-凝胶和冷压方法,在Ca3Co4O9-δ体系中引入不同量的Ag~+,Sr~(2+)或Yb~(3+)离子制备了可在300~870 K下稳定存在且热电性能优良的陶瓷材料Ca_(3-x-y)Ag_xSr_yCo_4O_(9-δ),Ca_(3-x-z)Ag_xYb_zCo_4O_(9-δ)和Ca_(3-y-z)Sr_yYb_zCo_4O_(9-δ)(x,y,z=0.1,0.15,0.2).通过X射线衍射(XRD)、傅里叶变换红外光谱(IR)和扫描电子显微镜(SEM)等手段对产物进行表征.结果显示,所制备的样品纯度较高,晶粒均匀,晶粒间较致密,适量的Ag~+,Sr~(2+),Yb~(3+)离子取代Ca~(2+)离子固溶到晶体中使制备的双掺杂材料晶胞体积发生了变化,但并未引起晶体对称结构的变化.电阻率和Seebeck系数结果表明,双掺杂优化了样品载流子的浓度,使样品电阻率不断减小,并使Seebeck系数的值不断增大.经过计算可知,Seebeck系数随电子有效质量的增大而增大.热导率结果表明,双掺杂的样品热导率随掺杂元素的不同而变化,计算结果显示声子热导依然在样品中占据主体贡献,这与Ca_3Co_4O_(9-δ)单掺杂Ag~+,Sr~(2+)或Yb~(3+)的结果吻合.随着温度的升高,双掺杂样品Ca_(2.7)Ag_(0.2)Yb_(0.1)Co_4O_(9-δ)在870 K下热电优值(ZT)值达到最大(0.18).     

Influence of Ru doping on the structure, defect chemistry, magnetic interaction, and carrier motion of the La(1-x)Na(x)MnO(3+delta) manganite

In this work, we report a structural, electrical, and magnetic characterization of the La(1-x)Na(x)Mn(1-y)Ru(y)O(3+delta) (LNMRO) system with x = 0.05 and 0.15 and y = 0, 0.05, and 0.15, also comprising an investigation of the role of the oxygen content on the related redox properties. The experimental investigation has been realized with the aid of X-ray powder diffraction, electron microprobe analysis, thermogravimetry, electrical resistivity and magnetization measurements, and electron paramagnetic resonance. We demonstrate that the effect of ruthenium doping on the studied LNMRO compounds is not only directly related to the Ru/Mn substitution and to the Ru oxidation state but also indirectly connected to the oxygen content in the sample. Our data show that ruthenium addition can "improve" electrical and magnetic properties of nonoptimally (low) cation-doped manganites, causing an increase of the T(C) value and the insurgence of magnetoresistance effect, as observed for the x = 0.05 and y = 0.05 sample (MR congruent with 60% at 7 T and at approximately 260 K).     

Structural and spectroscopic properties of pure and doped Ba6Ti2Nb8O30 tungsten bronze

Pure and doped Ba(6)Ti(2)Nb(8)O(30) (BTN), obtained by substituting M = Cr, Mn, or Fe on the Ti site (Ba(6)Ti(2-x) M(x)Nb(8)O(30), x = 0.06 and 0.18) and Y and Fe on the Ba and Ti sites, respectively (Ba(6-x)Y(x)Ti(2-x)Fe(x)Nb(8)O(30), x= 0.18), are synthesized. The influence of cation doping on the local structure, the cation oxidation state, and the possible defect formation able to maintain the charge neutrality are investigated by spectroscopic (electron paramagnetic resonance (EPR) and micro-Raman), structural (X-ray powder diffraction) and transport (impedance spectroscopy, thermoelectric power) measurements, in the temperature range of 300-1200 K in air and N(2) flow. Starting from the valence state of the doping ions (Fe(3+), Cr(3+), and Mn(2+)), determined by EPR, and from thermoelectric power measurements, evidencing a negative charge transport, different charge-compensating defect equilibria, based on the creation of positive electron holes or oxygen vacancies and electrons, are discussed to interpret the conductivity results.