具有复介电常量二维光子晶体的特性研究

采用平面波展开法,通过数值模拟研究了具有复介电常量的二维光子晶体的能带结构和光传输特性,重点讨论介电常量的虚部为负值情形时对传输特性的影响。研究表明由于光子带隙的存在有效地抑制了频率位于带隙内光的自发辐射。当在介质中掺入具有增益特性的杂质时,即使两种介质的介电常量相差很小,在靠近光子带隙边缘,出现了较强的受激辐射放大。通常在带隙的边缘处,光子晶体的群速度较小,而激光阈值正比于群速度的平方,当群速度很小时,激光阈值将大大减小。这为实现零阈值激光器提供了基础,也为制作光放大微器件提供了一个有益的理论参考。     

复介电常量双缺陷层的镜像对称光子晶体特性

利用传输矩阵法研究了两个复介电常量缺陷层镜像对称一维光子晶体的带隙结构和光传输特性。重点讨论了缺陷层的复介电常量的虚部为负值且光学厚度为λ0/4的情形时对传输特性的影响。研究发现:当在光子晶体的两端加入具有负虚部的复介电常量缺陷层后,多处出现了较强的透射峰增益。随着缺陷层复介电常量的虚部与实部比值的增加,各处透射峰增益变化规律不同。但中心波长处的缺陷膜的位置和高度不变。这为光子晶体同时实现多通道超窄带滤波器和不同放大倍数的光放大微器件的设计提供了理论基础。而在光子晶体的两端加入具有正虚部的复介电常量缺陷层后,各透射峰都出现了吸收现象,且随着其正虚部值I的增加,吸收越明显,这给光子晶体实现放大功能提供了理论指导。     

激活材料对镜像对称一维光子晶体透射谱的影响

利用传输矩阵法理论,研究了激活杂质材料对镜像对称结构一维光子晶体（ABCB）m（BCBA）m的透射谱的影响。结果表明：当介质无掺入激活杂质,即介质的介电常量为一实数时,禁带中心出现一条透射率为100%的透射峰;当在镜像对称结构的任一介质中掺入激活杂质,即介质的介电常数为一带有负虚部的复数时,透射峰的透射率均出现增益现象,且随着各介质复介电虚部大小的增大,透射增益出现一极大值后又减小;各介质复介电虚部大小的变化对光子晶体透射谱的影响存在各异,其中介质A掺入激活杂质时增益幅度最大,其次为C,B相对较小,但透射率的增益对B介质的复介电虚部响应最为灵敏,其次为C,A相对较为迟钝。这些特性对新型光学器件的设计具有指导意义。     

含复介电常量一维光子晶体量子阱结构研究

利用传输矩阵法研究了实介电常量和含复介电常量时一维光子晶体的透射谱.结果表明：两种情况下均构成光量子阱结构,并且光量子阱结构的透射能带谱位置和结构相同,但在含复介电常量负虚部情况下共振透射峰出现很强的增益现象,而在含复介电常量正虚部情况下共振透射峰则呈现明显的衰减现象.     

含复介电常量一维光子晶体量子阱结构研究

利用传输矩阵法研究了实介电常量和含复介电常量时一维光子晶体的透射谱.结果表明:两种情况下均构成光量子阱结构,并且光量子阱结构的透射能带谱位置和结构相同,但在含复介电常量负虚部情况下共振透射峰出现很强的增益现象,而在含复介电常量正虚部情况下共振透射峰则呈现明显的衰减现象.     

对全入射角负折射二维光子晶体结构和电磁参量的研究

利用二维光子晶体的等频线分析原理和平面波展开方法,得到了使二维光子晶体产生全入射角负折射(All-Angle Negative Refraction,AANR)现象时,入射电磁波的频率取值范围.同时,分析了AANR频率范围随着结构参量(晶格类型、介质棒半径与晶格周期的比值)和电磁参量(介质柱介电常量、本底介电常量、入射电磁波偏振方向)变化的行为.结果表明:固定组成光子晶体的一种介质的介电常量,另一介质的介电常量只有达到一定阈值,才有可能使光子晶体出现AANR现象.在给定两种介质介电常量的条件下,存在使AANR频率范围最大化的结构参量和电磁参量.     

掺杂光子晶体光纤自发辐射与掺杂激活杂质的光增益透射谱研究

借助光子晶体中二能级原子的自发辐射理论证明缺陷态的局域场存在的必然性以及局域场基本性质,为研究光子晶体光纤掺杂自发辐射的内在规律提供了理论依据。且将自发辐射理论与数值模拟相结合,在缺陷介质中掺激活杂质时,研究了光子晶体光纤的掺杂局域场特征以及受激辐射增强和透射率大于1现象与光子带隙群速度异常和掺杂层复有效折射率成负的虚部之间的内在关系。由此说明光子晶体光纤的缺陷介质中掺入激活杂质时,光子禁带中能出现品质因子非常高的杂质态,具有很大的态密度,较强的受激辐射放大。     

具有缺陷结构的三角形二维光子晶体结构参量对本征模的影响

通过有限元数值计算得到并图示了具有缺陷结构三角形二维光子晶体本征频率和介质柱半径、晶格常量以及介质柱介电常量之间的关系.利用这些关系可以在一定的范围内增大介质柱半径而相应减小介质柱介电常量,而本征频率基本保持不变.由于光子晶体结构参量的不同,本征模对应的电磁场在晶体中的分布也不同,图示了电场强度的大小在一些结构中的分布.由此可以掌握光子晶体结构参量对缺陷本征模的影响.     

异质双周期结构光子晶体光学特性

利用传输矩阵法研究了异质双周期结构一维光子晶体的带隙结构和光学传输特性。此光子晶体能形成512~960 nm的含5个极窄透射峰的光子带隙。重点研究了一种材料为复折射率时的光学传输特性,以及当结构发生轴向应变时的"介观压光效应"。结果表明:当复折射率虚部为负时,透射峰随虚部绝对值的增大先增大后减小,甚至出现衰减;虚部为正时,发生吸收现象。当光子晶体发生轴向应变时,透射峰随应变量的增加呈现近似L形变化,应变量很小时透射率几乎线性减小,波长越大透射峰变化越缓慢。     

用特征矩阵法计算光子晶体的带隙结构

讨论了利用特征矩阵计算一维光子晶体的光子带隙结构的方法.利用此方法计算了不同介电常量、不同几何结构以及掺杂的晶体结构的带隙特征,并推广至介质介电常量ε随入射光波频率ω变化的情况. 关键词： 光子带隙 特征矩阵 缺陷态     

Study on optical gain of one-dimensional photonic crystals with active impurity

Localized fields in the defect mode of one-dimensional photonic crystals with active impurity are studied with the help of the theory of spontaneous emission from two-level atoms embedded in photonic crystals.Numerical simulations demonstrate that the enhancement of stimulated radiation, as well as the phenomena of transmissivity larger than unity and the abnormality of group velocity close to the edges of photonic band gap, are related to the negative imaginary part of the complex effective refractive index of doped layers. This means that the complex effective refractive index has a negative imaginary part, and that the impurity state with very high quality factor and great state density will occur in the photonic forbidden band if active impurity is introduced into the defect layer properly. Therefore, the spontaneous emission can be enhanced, the amplitude of stimulated emission will be very large and it occurs most probably close to the edges of photonic band gap with the fundamental reason, the group velocity close to the edges of band gap is very small or abnormal.     

Stimulated emission from two-dimensional nested rectangle photonic crystal fibers

In this paper, we use the theory of spontaneous emission of two-level atoms embedded in photonic crystals. The unavoidable existence of a localized field with a defect mode and its basic properties are confirmed, which enables one to study the inherent laws of spontaneous emission from doped media. We combine the theory of spontaneous emission with numerical simulation for studying stimulated emission in a doped localized field and conditions for increasing the emission. The inherent laws for the cases where transmissivity is larger than unity and the negative imaginary part of the complex refractive index in doped compound lattices appears are also studied. The analysis of two-dimensional nested rectangle photonic crystal fibers (PCFs) with and without active impurities was performed using the finite-difference time-domain (FDTD) method. We find that, when active impurities are introduced into photonic crystal fibers, the negative imaginary part of the complex refractive index appears and the doped mode with high quality factor and great mode density occurs in the photonic forbidden band, thus amplifying substantially the stimulated emission.     

Spectral narrowing and lasing threshold in self-assembled active photonic crystal

Laser-induced emission from rhodamine-B dye embedded in pseudo band gap opaline photonic crystals is discussed. The photonic crystals are fabricated using rhodamine-B doped polystyrene colloids and show 65% reflectance at the stop band centered at 604 nm. The reflectance of the crystal is increased to 74% by coating with a thin layer of gold. Both spontaneous and stimulated emissions of the dye are observed in the photonic stop band environment by exciting the crystal with the second harmonic (532 nm) of a Q-switched Nd:YAG laser. The thin layer of gold functioned as a high reflecting end mirror to the dye-doped cavity when the crystal is pumped from the substrate side. Angle-dependent suppression at the stop band wavelength is observed in the spontaneous emission of the dye. Spectrally narrow stimulated emission and lasing is achieved in the gold coated dyed PhC at a threshold pump power of 60 mW in a selective direction of 22° from the direction of excitation. By studying emission from several photonic crystals with different number of layers, it is concluded that a sharp threshold for lasing is not observed in uncoated photonic crystals when they contained fewer than 30 ordered layers and lesser than 70% reflectance.     

Inhibited spontaneous emission of quantum dots observed in a 3D photonic band gap

We present time-resolved emission experiments of semiconductor quantum dots in silicon 3D inverse-woodpile photonic band gap crystals. A systematic study is made of crystals with a range of pore radii to tune the band gap relative to the emission frequency. The decay rates averaged over all dipole orientations are inhibited by a factor of 10 in the photonic band gap and enhanced up to 2× outside the gap, in agreement with theory. We discuss the effects of spatial inhomogeneity, nonradiative decay, and transition dipole orientations on the observed inhibition in the band gap.     

一维光子晶体的有效折射率及色散特性

对有限长度一维光子晶体引入了复有效折射率的概念.它的实部描述了一维光子晶体的色散特性, 虚部反映了光在光子禁带被损耗衰减而消失的特征.从具体计算λ/4 波片堆组成的一维光子晶体的复有效折射率的结果可以看到,它的实部受到光子带结构的调制,在光子禁带及透射带中的一部分出现反常色散现象.在很大的频率范围内,有效折射率变得小于1.     

含负折射率材料的一维“啁啾”光子晶体的透射谱

将"啁啾"函数引入到含负折射率材料的一维光子晶体中,利用转移矩阵法对这种光子晶体的透射谱进行了研究。通过计算模拟了这种光子晶体的透射谱随入射角、频率的变化关系,并计算了这种晶体的复有效折射率的表达式。结果表明,当"啁啾"函数对厚度调制不大时,该晶体具有很宽的反射带,并且反射带对入射角度反应不敏感,其原因是由于其复有效折射率的实部几乎为0,而虚部较大。利用这一特性可以用来制作高品质的宽带全方位反射镜。     

传输矩阵法分析有限周期光子晶体的反射谱特征

利用传输矩阵法计算了一维光子晶体的光子带隙结构，分析了有限周期一维光子晶体的反射率及有缺陷的有限周期一维光子晶体的反射率，并讨论了它们的特征。     

偏振态对复周期光子晶体禁带的影响

对于一维复周期光子晶体,当制作用的波长满足一定条件时可以实现禁带的展宽,本文利用传输矩阵法数值计算了偏振态对折射率渐变的一维复周期全息光子晶体的禁带的影响。通过计算发现,制作波长不等的复周期结构光子晶体,随着再现光的照射角度增大,S偏振态下禁带出现分裂;P偏振态下禁带均可视作完整展宽,没有分裂现象。同一制作波长两次曝光制作的复周期结构,不论是P偏振还是S偏振,禁带均实现展宽而没有分裂。这一结果对实现一维全息光子晶体禁带展宽具有指导意义。