基于二维材料及其范德瓦尔斯异质结的光电探测器

近些年来,石墨烯、黑磷和过渡金属二硫化物以及其他二维材料受到了越来越多的关注。凭借其独特的结构和优异的电学、光学特性,这些二维材料在光电器件中得到了广泛应用,具有良好的发展潜力。本文概述了二维材料在光电探测器领域的最新研究进展,介绍了一些常见的二维材料及其制备方法,阐述了光电探测器件的基本原理和评价参数,以及回顾了二维材料及其异质结构在光电探测器中的应用,最后总结了该领域仍然面临的挑战并对其未来的发展方向进行了展望。     

二维黑磷基纳米材料在光催化中的应用

黑磷是继石墨烯之后又一种新型的单元素二维材料。具有独特的层状结构、超高的载流子迁移率和由层厚调控的禁带宽度,在光催化领域具有广阔的应用前景。然而,单一黑磷材料的禁带宽度较窄( ≤ 1.5 eV),光生载流子极易复合,导致其光催化性能较低。另外,黑磷表面的磷原子易与环境中的氧气发生反应形成P_xO_y,降低了黑磷材料的稳定性。因此,较低的催化性能和不稳定性极大地限制了黑磷材料的实际应用。针对上述问题,可以通过将黑磷材料与其他材料复合形成一系列的等离子体复合材料和多维异质结的方式,来提高光催化剂的活性和循环稳定性。本文综述了近年来二维黑磷纳米片与金属、半导体和碳材料等复合后形成的复合材料在光催化裂解水产氢、降解有机污染物、CO₂还原和固氮等方面的研究进展。最后,对未来二维黑磷基光催化材料的研究方向进行了分析和展望。     

二维黑磷的结构、制备和性能

磷有多种同素异构体: 红磷、白磷、黑磷, 其中黑磷热力学稳定. 二维材料因其低维效应而备受关注, 而近期二维黑磷的成功制备使其成为二维材料的新成员. 二维黑磷是带隙可调的片层结构半导体材料, 在光电领域有很大的潜力, 因而备受瞩目. 本文大量引用参考文献, 综述了黑磷的结构、制备方法, 并详细介绍了二维黑磷的各种性质及其器件性能的研究, 以及化学稳定性及防降解措施. 最后分析了二维黑磷的研究发展趋势.     

块状和少层黑磷的合成

正黑磷(Black Phosphorus,BP)具有层状结构,而少层黑磷作为一种二维材料,则具有各向异性和随层数可调的性质。与石墨烯相比,黑磷具有可调的带隙;而与过渡金属二硫化物相比,黑磷具有较高的载流子迁移率,因此黑磷在半导体领域崭露头角。黑磷亦具有光热特性和优异的生物相容性,在生物领域如肿瘤治疗等方面应用前景广阔。此     

基于二维压电材料功能性器件的设计、构筑与性能研究

二维压电材料由于具有机械强度高、 性质多样、 柔性透明等特点, 吸引了广大科研人员的研究兴趣. 基于二维压电材料的柔性电子器件、 纳米传感器以及光电子器件等功能性器件也展现出了良好的性能和应用前景. 对此类器件的构筑和应用需要系统的设计和性能研究. 本综述围绕功能性的二维压电器件, 系统地论述了压电效应在(光)电子器件中的性能调控机制, 并总结其设计和制备流程以及如何实现多种功能性应用, 以期对此类器件的设计和研究提供参考.     

二维硫化钼基原子晶体材料的化学气相沉积法制备及其器件

二维过渡族金属硫属化合物因其带隙具有强烈的层数依赖性而在电子器件方面具有广泛的应用前景.其中单层二硫化钼(MoS₂)是该系列材料中最典型的一种直接带隙半导体,它具有优异的光、电、磁、热和力学性能.二维MoS₂有望在光电探测、光伏器件、场效应晶体管、存储器件、谷电子和自旋器件、温差电器件、微纳机电器件和系统等方面得以广泛应用.化学气相沉积(CVD)法已成为制备二维过渡族金属硫属化合物如MoS₂、MoSe₂、WS₂和WSe₂等原子层薄膜的主要手段,尤其科学界利用CVD法对二维MoS₂材料进行了深入的制备探索,通过该方法制备的MoS₂薄膜在电子和光电器件方面已经有广泛研究.本文将从二维MoS₂的基本物性出发,详细介绍CVD法制备MoS₂的各种工艺过程,如热分解硫代硫酸盐法、硫化Mo(MoO_3-x)薄膜制备法、MoO_3-x粉体与硫属前驱体气相合成法和钼箔表面直接硫化法,并介绍了基于MoS₂的二维异质结构筑方法.在制备材料的基础上,详细阐述了二维MoS₂在场效应晶体管、光电探测器、柔性电子器件以及异质结器件方面的应用,并展望了二维材料在半导体器件中的应用前景.     

结晶性有机半导体异质结器件

今天几乎所有重要的半导体器件的工作原理都与异质结和肖特基结有关,比较完整地理解和运用异质结和肖特基结是通过了长达半个世纪的持续努力.近20年有机异质结构已经被广泛的应用到有机电子器件中,包括有机发光二极管、有机光伏电池和有机场效应晶体管.然而,目前却缺少对有机异质结效应的认识.因此,完整认识有机异质结并运用它来发展有机半导体材料与器件是我们面临的机遇和挑战.本文首先阐述了我们对结晶性有机半导体异质结效应的理解,然后给出了有机异质结在半导体器件中的应用,重点介绍了我们近年来在运用有机异质结发展高功能电子器件方面的探索工作和初步认识.有机异质结在高性能场效应晶体管、改善金属有机接触和叠层器件中连接单元等方面均有所应用.有机异质结具有丰富的类型,充分利用有机异质结的特征,将为发展适合有机半导体材料、新功能器件和高级功能器件提供了新的视角和途径.     

二硫化钼二维原子晶体化学掺杂研究进展

以二硫化钼（MoS₂）为代表的半导体二维过渡金属硫族化合物（TMDCs）具有优异的光电特性,在新型电子器件领域展示出广阔的应用前景。二维MoS₂的性能调控与功能协同是实现其在电子器件领域实用化的关键。化学掺杂是调控二维MoS₂的性能并丰富其材料特性最为直接而有效的方法之一。本文重点介绍了基于表面电荷转移、面内取代以及层间插层策略的掺杂方法,讨论了各种掺杂方法的基本原理、最新进展以及局限性,最后展望了二维MoS₂掺杂研究面临的挑战与发展方向。     

金属卟啉二维纳米晶的制备及其光电性能

金属卟啉是一种重要的金属-有机复合物,在光电转换器件、催化、传感、医学等领域有着广阔的应用前景。对无机二维纳米材料（石墨烯或过渡金属硫属化合物等）的广泛研究促使金属-有机二维纳米材料成为当前的研究热点之一。本文针对金属-有机以及卟啉二维纳米材料的研究现状,在简要回顾金属-有机二维纳米材料发展历史的基础上,详细总结了金属卟啉单分散二维纳米晶和二维薄膜的制备方法,综述了其当前在太阳能电池、光电催化以及光学传感等方面的应用,最后讨论了金属卟啉二维纳米材料当前面临的研究问题及未来可能的发展方向。     

基于二维层状黑磷的高性能柔性固态超级电容器

正近年来,二维纳米材料以其特殊层状结构与优良性能作为柔性储能器件电极材料,人们已进行了广泛探索研究,期望发现性能优异的柔性二维电极材料。黑磷作为一种p型直接带隙层状单元素半导体上世纪60年代已被发现~1,但对二维层状黑磷的广泛兴趣始于2014年其在场效应管中的成功应用~2,近两年相关研究激增。研究发现,二维黑磷维持     

Advances in two-dimensional heterostructures by mono-element intercalation underneath epitaxial graphene

Two-dimensional (2D) materials have displayed many remarkable physical properties, including 2D superconductivity, magnetism, and layer-dependent bandgaps. However, it is difficult for a single 2D material to meet complex practical requirements. Heterostructures obtained by vertically stacking different kinds of 2D materials have extensively attracted researchers’ attention because of their rich electronic features. With heterostructures, the constraints of lattice matching can be overcome. Meanwhile, high application potential has been explored for electronic and optoelectronic devices, including tunneling transistors, flexible electronics, and photodetectors. Specifically, graphene-based van der Waals heterostructures (vdWHs) by intercalation are emerging to realize various functional heterostructures-based electronic devices. Intercalating atoms under epitaxial graphene can efficiently decouple graphene from the substrate, and is expected to realize rich novel electronic properties in graphene. In this study, we systematically review the progress of the mono-element intercalation in graphene-based vdWHs, including the intercalation mechanism, intercalation-modified electronic properties, and the practical applications of 2D intercalated heterostructures. This work would inspire edge-cutting ideas in the scientific frontiers of 2D materials.     

Two Step Chemical Vapor Deposition of In2Se3/MoSe2 van der Waals Heterostructures

Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide interest not only for the fundamental research,but also for the application of next generation electronic and optoelectronic devices.Herein,we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In₂Se₃/MoSe₂ heterostructures.Transmission electron microscopy characterization reveals clearly that the In₂Se₃ has well-aligned lattice orientation with the substrate of monolayer MoSe₂.Due to the interaction between the In₂Se₃ and MoSe₂ layers,the heterostructure shows the quenching and red-shift of photoluminescence.Moreover,the current rectification behavior and photovoltaic effect can be observed from the heterostructure,which is attributed to the unique band structure alignment of the heterostructure,and is further confirmed by Kevin probe force microscopy measurement.The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.     

范德华外延生长硫化镉二维纳米片及其光致发光性能研究

二维纳米材料具有独特的结构和优异的性能,在电子学及光电子学领域有广泛的应用前景,但关于硫化镉二维纳米材料的制备及性能研究还鲜有报道。本文首次采用范德华外延生长技术,在氟金云母片衬底上制备了硫化镉二维纳米片。通过扫描电子显微镜、透射电子显微镜、原子力显微镜、X射线粉末衍射仪和拉曼光谱仪等分析手段对产物的形貌、厚度、晶体结构、成分等进行了系统的研究。结果表明,纳米片具有六方纤锌矿晶体结构,尺寸约为几个微米,厚度约为几十纳米。范德华外延生长技术在硫化镉二维单晶纳米片制备上的成功应用,为其它二维非层状材料的制备提供了新的思路,并使其在高性能电子和光电子器件上的应用成为了可能。     

二维材料范德华间隙的利用

Since their discovery, two-dimensional (2D) materials have attracted significant research attention owing to their excellent and controllable physical and chemical properties. These materials have emerged rapidly as important material system owing to their unique properties such as electricity, optics, quantum properties, and catalytic properties. 2D materials are mostly bonded by strong ionic or covalent bonds within the layers, and the layers are stacked together by van der Waals forces, thereby making it possible to peel off 2D materials with few or single layers. The weak interaction between the layers of 2D materials also enables the use of van der Waals gaps for regulating the electronic structure of the system and further optimizing the material properties. The introduction of guest atoms can significantly change the interlayer spacing of the original material and coupling strength between the layers. Also, interaction between the guest and host atom also has the potential to change the electronic structure of the original material, thereby affecting the material properties. For example, the electron structure of a host can be modified by interlayer guest atoms, and characteristics such as carrier concentration, optical transmittance, conductivity, and band gap can be tuned. Organic cations intercalated between the layers of 2D materials can produce stable superlattices, which have great potential for developing new electronic and optoelectronic devices. This method enables the modulation of the electrical, magnetic, and optical properties of the original materials, thereby establishing a family of 2D materials with widely adjustable electrical and optical properties. It is also possible to introduce some new properties to the 2D materials, such as magnetic properties and catalytic properties, by the intercalation of guest atoms. Interlayer storage, represented by lithium-ion batteries, is also an important application of 2D van der Waals gap utilization in energy storage, which has also attracted significant research attention. Herein, we review the studies conducted in recent years from the following aspects: (1) changing the layer spacing to change the interlayer coupling; (2) introducing the interaction between guest and host atoms to change the physico-chemical properties of raw materials; (3) introducing the guest substances to obtain new properties; and (4) interlayer energy storage. We systematically describe various interlayer optimization methods of 2D van der Waals gaps and their effects on the physical and chemical properties of synthetic materials, and suggest the direction of further development and utilization of 2D van der Waals gaps.     

Mechanical exfoliation of large area 2D materials from vdW crystals

Monolayer two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides (TMDCs), provide a versatile platform for exploring novel physical phenomena at the 2D limit, and show great promise for next-generation electronic, optoelectronic, and quantum devices. To overcome the weak van der Waals interaction in the bulk layered crystal and achieve high quality single-crystal monolayers is a crucial task in top-down mechanical exfoliation. Tape exfoliation has long been the dominant approach to obtain single-crystal monolayers with high quality. More recently, there has been a fast development of using metals as an intermediate to enhance monolayer area and exfoliation yield. This review will provide a survey of mechanical exfoliation strategies of tape and metal-assisted exfoliations, particularly for the most popular graphene and TMDC materials. The interfacial interaction and lateral strain between monolayer and other materials such as oxides and metals play a crucial role in monolayer selectivity and yield. The challenges and opportunities will be highlighted for future development of exfoliating procedures to achieve large-area and high-quality 2D material monolayers and artificial stacks.     

基于二维材料WX_2构建的范德华异质结的结构和性质及应变效应的理论研究

二维材料过渡金属硫属化物(TMDs),因其优越的物理化学特性及其在光电子器件、光催化等领域的潜在应用价值,得到了人们的广泛关注。基于TMDs材料可以构建具有不同性能的范德华(vdW)异质结,但构建的异质结由于其固有的能带带隙大小限制了其在全光谱上的响应,因而对其能带带隙调控变得十分重要。本文基于第一性原理方法系统地研究了WX_2 (X=S, Se, Te)从单层到体相的结构和性质,以及由此组装的vdW异质结构WS_2/WSe_2、WS_2/WTe_2和WSe_2/WTe_2的结构和性质以及应力应变对异质结构的能带带隙的影响。结果表明:结合HSE06泛函和自旋轨道耦合(SOC)效应的计算方案可以精确描述WX_2体系;异质结构WS_2/WSe_2,WS_2/WTe_2和WSe_2/WTe_2呈现type-II能带分类;在施加单轴或双轴的应力应变后,能带带隙大小发生相应改变,当晶格形变大于4%后,异质结构由半导体特性变成具有金属性。这些研究为光电子器件的设计提供了重要的指导意义。     

First-Principles Study on Electronic and Optical Properties of Graphene-Like Boron Phosphide Sheets

Two-dimensional semiconducting materials with moderate band gap and high carrier mobil-ity have a wide range of applications for electronics and optoelectronics in nanoscale. On the basis of first-principles calculations, we perform a comprehensive study on the electronics and optical properties of graphene-like boron phosphide (BP) sheets. The global structure search and first-principles based molecular dynamic simulation indicate that two-dimensional BP sheet has a graphene-like global minimum structure with high stability. BP monolayer is semiconductor with a direct band gap of 1.37 eV, which reduces with the number of layers. Moreover, the band gaps of BP sheets are insensitive to the applied uniaxial strain.= The calculated mobility of electrons in BP monolayer is as high as 10⁶ cm²/(V·s). Lastly, the MoS₂/BP van der Waals heterobilayers are investigated for photovoltaic applications, and their power conversion efficiencies are estimated to be in the range of 17.7%－19.7%. This study implies the potential applications of graphene-like BP sheets for electronic and optoelectronic devices in nanoscale.     

2D transition metal chalcogenides and van der Waals heterostructures: Fundamental aspects of their electrochemistry

The explosion of research on graphene has prompted a similar level of activity on materials with related structures, i.e. two-dimensional materials formed from solids with a laminar structure, which can be isolated in their monolayer form. The main focus of activity beyond graphene, in electrochemical and other contexts, has focussed on the transition metal dichalcogenides. This review will highlight important advances in the use of these materials in an electrochemical context. The existence of a “family” of two-dimensional materials has led to recent interest in the creation of “van der Waals heterostructures”, where dissimilar two-dimensional materials are assembled in a specific fashion to produce structures with distinct electronic properties. The application of these materials in electrochemistry is in its infancy but very recent works suggest this will be an extremely important area of research in the coming years.     

Engineering Plasmonic Environments for 2D Materials and 2D-Based Photodetectors

Two-dimensional layered materials are considered ideal platforms to study novel small-scale optoelectronic devices due to their unique electronic structures and fantastic physical properties. However, it is urgent to further improve the light–matter interaction in these materials because their light absorption efficiency is limited by the atomically thin thickness. One of the promising approaches is to engineer the plasmonic environment around 2D materials for modulating light–matter interaction in 2D materials. This method greatly benefits from the advances in the development of nanofabrication and out-plane van der Waals interaction of 2D materials. In this paper, we review a series of recent works on 2D materials integrated with plasmonic environments, including the plasmonic-enhanced photoluminescence quantum yield, strong coupling between plasmons and excitons, nonlinear optics in plasmonic nanocavities, manipulation of chiral optical signals in hybrid nanostructures, and the improvement of the performance of optoelectronic devices based on composite systems.