Phase diagram for diamond growth in atmospheric oxyacetylene flames

2 /C₂H₂ ratio for diamond synthesis in oxyacetylene flames can be theoretically predicted. When the substrate temperature is between 1000 K and 1250 K, the corresponding O₂/C₂H₂ ratio range is about between 0.8 and 1.1. The suitable range of substrate temperature is widest for O₂/C₂H₂ ratio close to unity and is narrowed rapidly when the flow ratio deviates from unity. Received: 2 March 1997/Accepted: 17 July 1997     

Temperature-pressure phase diagram of silicon determined by Clapeyron equation

The temperature-pressure phase diagram [T-P] for silicon (Si) is predicted through the Clapeyron equation where the pressure-dependent volume difference is modeled and the corresponding thermodynamic amount of solid transition enthalpy is calculated by introducing the effect of surface stress induced pressure. The model prediction is found to be consistent with the present experimental results and other theoretical predictions.     

The phase diagram of (NH4I)x(KI)1−x

The χ,T phase diagram of (NH₄I)_x(KI)_1−x has been determined using neutron diffraction experiments and dielectric spectroscopy. At low temperatures and with decreasing χ, the sequence γ, β, ε and glass phase has been detected. The critical concentration χ_c≈0.55 separates the glassy phase with frozen-in orientational disorder from the ε phase which reveals long-range orientational order. Close to χ_c our experiments reveal evidence for two subsequent glass transitions.     

Incorporation of Sn into epitaxial GaAs grown from the liquid phase

The incorporation of Sn into LPE GaAs was studied as a function of the atomic fractionx _Sn ^l of Sn in the liquid (1.6×10⁻⁴≤x _Sn ^l ≤0.54), the growth temperatureT _K and the cooling rate α. The diffusion coefficient of As in Ga for moderate Sn-doping was deduced from the growth velocities to beD _As (760° C)=(3.3±1.0)×10⁻⁵ cm²/s. The epitaxial layers were analyzed after van der Pauw with special emphasis on the sources of experimental error. With the aid of current mobility theories the concentrations of the ionized donors and acceptors were derived. From their dependence onx _Sn ^l , on α and onT _K combined with the Schottky-barrier model of Sn incorporation it can be concluded that the melt and the growing crystal surface were in thermal equilibrium. The diffusion coefficient of Sn in GaAs is about 8×10⁻¹⁴ cm²/s at 760° C. The distribution coefficient for Sn increases from 4.4×10⁻⁵ to 12.3×10⁻⁵ in the temperature range from 690 to 800° C. The total Sn incorporationx _Sn ^s was measured using the atomic absorption spectroscopy for the first time down tox _Sn ^s =10¹⁷/cm³. From these data it can be concluded that up tox _Sn ^l =0.54 the dopant Sn is incorporated as donor and as acceptor only and that within the experimental scatter there is no indication of incorporation as a neutral species.     

Carrier concentration in modulation-doped AlGaAs-GaAs heterostructures

Single-interface modulation-doped AlGaAs-GaAs heterostructures have very high mobilities if thick undoped spacers are introduced between the Si donors and the twodimensional electron gas. Electron densities are limited to values below 10¹² cm^–2. Higher channel densities are desirable for device applications and can be obtained by confining the electrons in quantum wells doped from both sides. Single quantum-well structures have been grown with sheet carrier densities exceeding 3×10¹² cm^–2 at 300 K and 77 K mobilities of 54,000 cm²/Vs. Single quantum wells doped from one side only with low electron concentrations of 2×10¹¹ cm^–2 have 4.2 K mobilities of 200,000cm²/Vs.     

Development of depressions and voids during LPE growth of GaAs

Depressions and voids, morphological defects which are frequently encountered in LPE-layers of III–V compounds, are described. Their development is discussed for GaAs LPE layers exhibiting facet growth as well as terrace growth. Experimental conditions for the growth of depression- and void-free layers are specified.     

Effects of temperature and pressure on CVD diamond growth from the C-H-O system

Received: 28 August 1997/Accepted: 18 November 1997     

ZnO:Ag film growth on Si substrate with ZnO buffer layer by rf sputtering

ZnO buffer layers were deposited on n-Si (1 0 0) substrate by rf magnetron sputtering at a lower power of 40 W. Then Ag-doped ZnO (SZO) films were deposited on buffered and non-buffered Si at a higher sputtering power of 100 W. The effects of buffer layer on the structural, electrical and optical properties of SZO films were investigated. The three-dimensional island growth process of ZnO buffer layer was discussed. The energy band diagram of p-SZO/n-Si heterojunction was constructed based on Anderson's model. Results show the ZnO buffer layer leads to better properties of SZO film, including larger grain size, smoother surface, higher carrier mobility, better rectifying behavior, lower interface state density, and weaker deep-level emission. It is because the ZnO buffer layer effectively relaxes the partial stress induced by the large lattice mismatch between SZO and Si.     

The coalescence of silicon layers grown over SiO2 by liquid-phase epitaxy

We have investigated by liquid-phase epitaxy (LPE) the coalescence of defect-free silicon-on-insulator (SOI) layers. The SOI lamellae grow out laterally from neighbouring seeding windows and spread over the SiO₂. In our study, the seeding window edges are straight. The long window edges are parallel and extend in the (111) substrate plane in direction. Coalescence of SOI lamellae takes place without the formation of defects whenever it begins at one point and then proceeds in directions parallel to the longer edges of the windows in a zip-like mechanism. Defect-free coalescence seams reach lengths of up to 150 m.     

Photoluminescence and field emission properties of Sn-doped ZnO microrods

Sn-doped ZnO (SZO) microrods have been fabricated by a thermal evaporation method. Effect of Sn dopant on the microstructure, morphological and composition of as-prepared SZO microrods have been investigated by X-ray diffraction (XRD), Raman, scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) spectroscopy. The influence of the doping concentration on the morphological of the microrods has been investigated. Photoluminescence (PL) of these SZO microrods exhibits a weak ultraviolet (UV) emission peak at around 382 nm and the strong green emission peak at around 525 nm at room temperature. Field emission measurements demonstrate that the SZO possess good performance with a turn-on field of ∼1.94 V/μm and a threshold field of ∼3.23 V/μm, which have promising application as a competitive cathode material in FE microelectronic devices.     

Investigation of electrical and ammonia sensing characteristics of Schottky barrier diode based on a single ultra-long ZnO nanorod

Novel ultra-long ZnO nanorods, with lengths about 0.5-1.5 mm and diameters ranging from 100 to 1000 nm, in mass production have been synthesized via the vapor-phase transport method with CuO catalyst at 900 °C. Rectifying Schottky barrier diodes have been fabricated by aligning a single ultra-long ZnO nanorod across paired Ag electrodes. The resulting current-voltage (I-V) characteristics of the SBD exhibit a clear rectifying behavior. The ideality factor of the diode is about 4.6, and the threshold voltage is about 0.54 V at room temperature (300 K). At the same time the detailed I-V characteristics have been investigated in the temperature range 423-523 K. In addition, after exposure of the Schottky diodes to NH₃, the forward and reverse currents increase rapidly, indicating a high sensitivity to NH₃ gas.     

Magnetic and field emission properties of straw-like CuO nanostructures

This paper reports CuO straw-like nanostructures (nanostraws) synthesized on copper foil substrate through a simple solution method at room-temperature without using any template. The microstructure and morphological of CuO nanostraws were investigated by the X-ray diffraction (XRD) and field emission scanning electron microscope (FESEM), revealing that the straw-like nanostructures were exhibited the nanocrystalline nature with monoclinic structure and monodispersed in large quantity. The possible growth mechanism for the formation of CuO nanostraws products was discussed in detail. In addition magnetic properties and field emission properties of as-obtained products were also investigated.     

Exploration of layered-type pseudo four-component Li-Ni-Co-Ti oxides

A series of layered-type pseudo four-component Li-Ni-Co-Ti oxides were prepared to explore optimal cathode materials for a lithium-ion secondary battery. The new layered-type compounds were prepared using a combinatorial material-preparation system based on electrostatic spray deposition (the “M-ist Combi” system), and combinatorial powder X-ray diffraction. The composition region of the new compounds (Li_α(Ni_xCo_yTi_z)O₂ (α∼1, 0 ≤ x ≤ 1, 0 ≤ y ≤ 1, z∼0.2, x + y + z = 1.0)) was found to be wider than the composition region previously reported (LiNi_0.8−yCo_0.2Ti_yO₂ (0 ≤ y ≤ 0.1)).     

High-throughput synthesis and characterization of Mg1−xCaxO films as a lattice and valence-matched gate dielectric for ZnO based field effect transistors

Using composition-spread technique, we have grown metastable Mg_1−xCa_xO solid solution films on ZnO layers by pulsed laser deposition. All the films exhibited (1 1 1) oriented cubic phase. Despite a large miscibility gap, no phase separation took place at growth temperatures up to 700 °C, whereas an optimal growth temperature was found at 400 °C in terms of the crystallinity. The composition-spread films were characterized by X-ray diffraction mapping technique. Both lattice parameters and diffraction intensity increased with increasing the CaO composition. The present isovalent heterointerfaces realized the perfect lattice-matching by properly adjusting the CaO composition, leading to particular interest for ZnO based field effect transistors.     

Structure and morphology of chemical bath-deposited CdS films and clusters

Thin films of cadmium sulfide have been deposited on glass substrates and the structural properties of films have been investigated using scanning electron microscopy and X-ray diffraction techniques. The films consist of domains (groups of grains) and weakly bound grain clusters. The structural parameters of grains, domains and clusters and the effect of film thickness on these parameters are reported. From the measurement of lattice constants in CdS films and in free CdS clusters, it has become evident that the films on glass substrates have a tensile strain along their planes. The effect of thermal annealing on the partial relaxation of the strain is discussed. Received: 29 January 2001 / Accepted: 30 January 2001 / Published online: 3 May 2001     

Thermodynamics of diamond film deposition at low pressure from chlorinated precursors

3 and C₂H₂ concentrations at growth surface and accelerating abstraction of surface-terminating atoms. The effects of Cl addition on diamond film quality are also discussed. Received: 1 May 1998 / Accepted: 15 October 1998     

Dielectric relaxation,ac and dc conductivities in the fullerenes C60 and C70

The complex conductivity in polycrystalline C₆₀ and C₇₀ has been investigated for frequencies 20 Hz≤ν≤10⁶ Hz and temperatures 10 K≤T≤750 K. The high-frequency dielectric constants ε_α= 2.6±0.1(C₆₀) and ε_∞= 4.6±0.1 (C₇₀) were deduced from these experiments. The observed low temperature relaxation process in C₆₀ fits well into the relaxation dynamics of the C₆₀ molecules as determined by many other experimental techniques operating on very different time scales. In addition to the study of the dipolar relaxation process, the dc and ac conductivities were determined. From the temperature dependence of the dc conductivities energy barriers of E_G=1.75±0.1 eV (C₆₀) and E_G=1.7±0.1 eV (C₇₀) were estimated. In C₇₀ we found indications for small polaron tunneling.