Silicon surface modification with trialkoxysilyl‐functionalized star‐shaped polymers

The synthesis of trimethoxysilane end‐capped linear polystyrene (PS) and star‐branched PS and subsequent silicon (Si) surface modification with linear and star polymers are described. Trimethoxysilane terminated PS was synthesized using sec‐butyl lithium initiated anionic polymerization of styrene and subsequent end‐capping of the living anions with p‐chloromethylphenyl trimethoxysilane (CMPTMS). ¹H and ²⁹Si NMR spectroscopy confirmed the successful end‐capping of polystyryllithium with the trimethoxysilane functional group. The effect of a molar excess of end‐capper on the efficiency of functionalization was also investigated, and the required excess increased for higher molar mass oligomers. Acid catalyzed hydrolysis and condensation of the trimethoxysilane end‐groups resulted in star‐branched PS, and NMR spectroscopy and SEC analysis were used to characterize the star polymers. This is the first report of core‐functionalized star‐shaped polymers as surface modifiers and the first comparative study showing differences in surface topography between star and linear polymer modified surfaces. Surface‐sensitive techniques such as ellipsometry, contact angle goniometry, and AFM were used to confirm the attachment of star PS, as well as to compare the characteristics of the star and linear PS modified Si surfaces. The polymer film properties were referenced to polymer dimensions in dilute solution, which revealed that linear PS chains were in the intermediate brush regime and the star‐branched PS produced a surface with covalently attached chains in the mushroom regime. © 2005 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 43: 3655–3666, 2005     

Enhancement of Electrochemiluminescence of Porous Silicon with Tri‐n‐propylamine as Co‐reactant

Visible light emission can be stimulated by applying a cyclic bias to a porous silicon/tri‐n‐propylamine (PS/TPrA) solid/liquid system. With the presence of 2.5 mM TPrA, the electrochemiluminescence intensity of the in situ formed PS electrode is 450 times higher than the blank solution. An applied voltage as low as 1.2 V is capable of generating light emission, indicating that current‐induced chemical reactions are an aid to the generation of charge carriers. A mechanism involving oxidation of TPrA followed by hole injection is proposed. The system also shows good ECL stability. In addition, the ECL emission can be inhibited by diphenols rather than phenol.     

Silicon Wafers with Facet‐Dependent Electrical Conductivity Properties

By breaking intrinsic Si (100) and (111) wafers to expose sharp {111} and {112} facets, electrical conductivity measurements on single and different silicon crystal faces were performed through contacts with two tungsten probes. While Si {100} and {110} faces are barely conductive at low applied voltages, as expected, the Si {112} surface is highly conductive and Si {111} surface also shows good conductivity. Asymmetrical I –V curves have been recorded for the {111}/{112}, {111}/{110}, and {112}/{110} facet combinations because of different degrees of conduction band bending at these crystal surfaces presenting different barrier heights to current flow. In particular, the {111}/{110} and {112}/{110} facet combinations give I –V curves resembling those of p–n junctions, suggesting a novel field effect transistor design is possible capitalizing on the pronounced facet‐dependent electrical conductivity properties of silicon.     

Thermoresponsiveness of Integrated Ultra‐Thin Silicon with Poly(N‐isopropylacrylamide) Hydrogels

Stimuli‐sensitive polymer materials have limited device functionality, design and manufacturing flexibility although they are pushed to enable smart device applications. Here we demonstrate the capability of integrating thermoresponsive poly(N‐isopropylacrylamide) (PNIPAAm) hydrogels with silicon nanoribbons, and enable the stiff silicon ribbons to become adaptive and drivable by the soft environmentally sensitive substrate, such as becoming mechanically stretched and compressed on temperature change. These and related soft/hard smart devices and systems may open new opportunities in biomedical applications.

     

Silver‐Assisted Chemical Etching on Silicon with Polyvinylpyrrolidone‐Mediated Formation of Silver Dendrites

Metal‐assisted chemical etching (MaCE) on silicon (Si)—mediated by polyvinylpyrrolidone (PVP)—is systematically investigated herein. It is found that the morphologies and crystallographic natures of the grown silver (Ag) dendrites can be significantly modulated, with the presence of PVP in the MaCE process leading to the formation of faceted Ag dendrites preferentially along the (111) crystallographic phase, rather than along the (200) phase. Further explorations of the PVP‐mediated effect on Si etching are also revealed. In contrast to the aligned Si nanowires formed by MaCE without PVP addition, only distributed nanopores with sizes of 200 to 400 nm appear on the Si surfaces in the presence of PVP. The origin of surface polishing on Si in the PVP‐mediated MaCE process can be attributed to the distinct transport pathway of holes supplied by the Ag⁺ ions, where the holes are injected directly into the primary Ag seeds, rather than through Ag dendrites, thus leading to the isotropic etching of the Si surface.     

Functionalization of Hydride‐Terminated Photoluminescent Silicon Nanocrystals with Organolithium Reagents

Hydride‐terminated photoluminescent silicon nanocrystals (SiNCs) were functionalized with organolithium compounds. The reaction is proposed to proceed through cleavage of Si?Si bonds and formation of a Si?Li surface species. The method yields colloidally stabilized SiNCs at room temperature with short reaction times. SiNCs with mixed surface functionalities can be prepared in an easy two‐step reaction by this method by quenching of the Si?Li group with electrophiles or by addressing free Si?H groups on the surface with a hydrosilylation reaction.     

Facile Access to an NHC‐Coordinated Silicon Ring Compound with a Si=N Group and a Two‐Coordinate Silicon Atom

Reaction of the bicyclo[1.1.0]tetrasilatetraamide Si₄{N(SiMe₃)Dipp}₄ 1 (Dipp=2,6‐diisopropylphenyl) with 5 equiv of the N‐heterocyclic carbene NHC^Me4 (1,3,4,5‐tetramethylimidazol‐2‐ylidene) affords a bifunctional carbene‐coordinated four‐membered‐ring compound with a Si=N group and a two‐coordinate silicon atom Si₄{N(SiMe₃)Dipp}₂(NHC^Me4)₂(NDipp) 2 . When 2 reacts with 0.25 equiv sulfur (S₈), two sulfur atoms add to the divalent silicon atom in plane and perpendicular to the plane of the Si₄ ring, which confirms the silylone character of the two‐coordinate silicon atom in 2 .     

Equilibrium Formation of Stable All‐Silicon Versions of 1,3‐Cyclobutanediyl

Main group analogues of cyclobutane‐1,3‐diyls are fascinating due to their unique reactivity and electronic properties. So far only heteronuclear examples have been isolated. Here we report the isolation and characterization of all‐silicon 1,3‐cyclobutanediyls as stable closed‐shell singlet species from the reversible reactions of cyclotrisilene c‐Si₃Tip₄ (Tip=2,4,6‐triisopropylphenyl) with the N‐heterocyclic silylenes c‐[(CR₂CH₂)(NtBu)₂]Si: (R=H or methyl) with saturated backbones. At elevated temperatures, tetrasilacyclobutenes are obtained from these equilibrium mixtures. The corresponding reaction with the unsaturated N‐heterocyclic silylene c‐(CH)₂(NtBu)₂Si: proceeds directly to the corresponding tetrasilacyclobutene without detection of the assumed 1,3‐cyclobutanediyl intermediate.     

Electron transport in Nano‐Gold–Silicon interfaces

The electron transport characteristics of gold–silicon interfaces are studied using a combined ab initio approach of the Green's function for electron transfer and quantum density functional theory (DFT) for finite and extended systems. The Kohn–Sham Hamiltonian of an extended cluster or molecule and the density of states (DOS) of bulk Si and Au are used to construct the interface Hamiltonian to obtain the DOS, electron transmission, and current–voltage characteristics of the interface. Diode behavior is observed with electron conduction when the gold side is positively biased with a threshold of 0.8 V. The presence of molecules trapped at the interface and the geometry of the metal atoms strongly affect the conductance, implying difficult or even impossible theory–experiment validations. © 2006 Wiley Periodicals, Inc. Int J Quantum Chem, 2007     

Planar Chiral,Ferrocene‐Stabilized Silicon Cations

The preparation of a series of planar chiral, ferrocenyl‐substituted hydrosilanes as precursors of ferrocene‐stabilized silicon cations is described. These molecules also feature stereogenicity at the silicon atom. The generation and ²⁹Si NMR spectroscopic characterization of the corresponding silicon cations is reported, and problems arising from interactions of the electron‐deficient silicon atom and adjacent C(sp³)?H bonds or aromatic π donors are discussed. These issues are overcome by tethering another substituent at the silicon atom to the ferrocene backbone. The resulting annulation also imparts conformational rigidity and steric hindrance in such a way that the central chirality at the silicon atom is set with complete diastereocontrol. These chiral Lewis acid catalysts were then tested in difficult Diels–Alder reactions, but no enantioinduction was seen.     

The Geometric Structure of Silver‐Doped Silicon Clusters

Cationic silver‐doped silicon clusters, Si_nAg⁺ (n=6–15), are studied using infrared multiple photon dissociation in combination with density functional theory computations. Candidate structures are identified using a basin‐hopping global optimizations method. Based on the comparison of experimental and calculated IR spectra for the identified low‐energy isomers, structures are assigned. It is found that all investigated clusters have exohedral structures, that is, the Ag atom is located at the surface. This is a surprising result because many transition‐metal dopant atoms have been shown to induce the formation of endohedral silicon clusters. The silicon framework of Si_nAg⁺ (n=7–9) has a pentagonal bipyramidal building block, whereas the larger Si_nAg⁺ (n=10–12, 14, 15) clusters have trigonal prism‐based structures. On comparing the structures of Si_nAg⁺ with those of Si_nCu⁺ (for n=6–11) it is found that both Cu and Ag adsorb on a surface site of bare Si_n⁺ clusters. However, the Ag dopant atom takes a lower coordinated site and is more weakly bound to the Si_n⁺ framework than the Cu dopant atom.