Charged particle erosion of solid rare gases and dilute rare gas alloys

We present the first experimental results on electron-induced erosion of solid neon. The measurements are interpreted qualitatively within a new model invoking excitation transport by free excitons and their subsequent decay at the surface. The model accounts for the magnitude of the observed yield and the energy dependence. A theoretically predicted decrease in the erosion yield due to doping with a heavier rare gas, in casu argon, has been observed experimentally. The strong influence of very small amounts of different types of impurities makes sample purity a crucial problem in investigations of the erosion of solid rare gases.     

Ion beam induced modifications of TiN and Ti films on Al-3% Mg substrates

Thin titanium nitride films (50–110 nm) deposited via magnetron sputtering on Al+3 wt.% Mg substrates were irradiated with Ar, Kr, and Xe ion beams at room temperature and with energies between 0.1–0.9 MeV. Sputtering yields and interface mixing rates were determined using Rutherford backscattering (RBS) as depth profiling method. The obtained TiN sputtering yields for Ar and Xe irradiation are found to be in good agreement with predictions of the Sigmund approach. A systematic study with Ar and Xe beams revealed a correlation of the mixing rate with the parameter d/R _p, where d denotes the layer thickness and R _p the mean projected ion range. The mixing data and Monte-Carlo calculations of the collision cascades elucidate the importance of focused recoil transport, especially in the case of Xe irradiations. The results from ion mixing experiments of titanium films (70–140 nm) on Al-3% Mg with 0.1–1.0 MeV Xe beams and 0.05–0.2 MeV Ar beams support these conclusions.     

Sputtering yields of nickel and chromium

The sputtering yield of polycrystalline nickel and chromium was determined as a function of projectile energy (1–8 keV), projectile mass (N⁺, Ne⁺, Ar⁺, Xe⁺), angle of incidence (0°–75°), and oxygen partial pressure. Where theoretical values exist, the agreement is reasonable.EURATOM Association     

Ripple topography on thin ZnO films by grazing and oblique incidence ion sputtering

We have investigated the formation and growth of nano sized ripple topography on ZnO thin films by 10 keV O¹⁺ bombardment at impact angles of 80° and 60°, varying the ion fluence from 5 × 10¹⁶ to 1 × 10¹⁸ ions/cm². At 80° the ripples are oriented along the ion beam direction whereas at 60° it is perpendicular to the ion beam direction. The developed ion induced structures are characterized by atomic force microscopy (AFM) and the alignment, variation of rms roughness, wavelength and correlation length of the structures are discussed with the existing model and basic concept of ion surface interaction.     

Direct observation of laser-induced crystallization of a-C:H films

The post-growth modification of diamond-like amorphous hydrogenated carbon a-C:H films by laser treatment has been studied by transmission electron microscopy and Raman spectroscopy. a-C:H films grown on Si substrates by benzene decomposition in a rf glow discharge were irradiated with 15 ns pulses of a KrF-excimer laser with fluences in the range of E=50–700 mJ/cm². At fluences below 100 mJ/cm² an increase in the number of graphitic clusters and in their ordering was evidenced from Raman spectra, while the film structure remained amorphous according to electron microscopy and electron diffraction observations. At higher fluences the appearance of diamond particles of 2–7 nm size, embedded into the lower crystallized graphitic matrix, was observed and simultaneously a progressive growth of graphite nanocrystals with dimensions from 2 nm to 4 nm was deduced from Raman measurements. The maximum thickness of the crystallized surface layer (400 nm) and the degree of laser annealing are limited by the film ablation which starts at E>250 mJ/cm². The laser-treated areas lose their chemical inertness. In particular, chemical etching in chromium acid becomes possible, which may be used for patterning the highly inert carbon films.     

Femtosecond-laser-induced nanostructure formed on hard thin films of TiN and DLC

We report observation of nanostructures formed on thin TiN and DLC films that were irradiated by 800- and 267-nm, femtosecond (fs) Ti:sapphire laser pulses at an energy fluence slightly above the ablation threshold. On the ablated thin-film surfaces, the linearly polarized fs pulses produce arrays of fine periodic structures that are almost oriented to the direction perpendicular to the laser polarization, while the circularly polarized light forms fine-dot structures. The size of these surface structures is 1/10–1/5 of the laser wavelength and decreases with a decrease in the laser wavelength. Received: 3 September 2002 / Accepted: 4 September 2002 / Published online: 17 December 2002 RID="*" ID="*"Corresponding author. Fax: +81-778/62-3306, E-mail: yasuma@fukui-nct.ac.jp     

Ion beam mixing of Pt marker layers in Al

We have studied the ion beam mixing of Pt marker layers which were 1 nm thick and buried 55 nm deep in Al. The samples were irradiated with Ne, Ar, Kr, Xe, and Pb ions with ion energies ranging from 75 to 600 keV and damage energy densities from 0.17 to 2.0 keV/nm. The depth distributions of both the implanted ions and the marker atoms were measured with Rutherford backscattering spectrometry. The experimental mixing efficiency of = 0.856(24) nm⁵/keV is about ten times as high as was to be expected from the ballistic model and the local spike models. We suggest a connection between this unexpectedly high mixing efficiency and the vanishing primary solid solubility of the marker element in the host matrix.     

Three-dimensional damage distributions of molecular ions implanted into silicon,as recorded by RBS/channeling combined with tomography

The depth distributions of damage of 1.4 MeV nitrogen molecular ions (N ₂ ⁺ ) implanted into Si crystals at doses slightly below the value for amorphization have been measured by means of standard RBS/channeling for different directions of impact. These damage distributions were fed into our modified tomographic program MO-TOR [1, 2], by which we could reconstruct the spatial distributions of nuclear energy transfer. These distributions are compared with the three-dimensional theoretical prediction of a modified TRIM code [3].It turns out that there exists a pronounced deviation from the purely ballistic damage distribution insofar as the reconstructed damage distribution is twice as broad in the lateral direction than predicted. This is essentially explained by deviations in flight geometry of molecular ions in comparison with single-atomic ones.     

Oxidation and thermal annealing effects on native and ion-irradiated PbTe films grown by molecular beam deposition

Investigations are reported into the effect of low-pressure oxygen exposure and thermal annealing on the carrier transport properties of native and 350 eV Ar⁺ bombarded PbTe films. The electrical measurements were madein situ on MBD-grown PbTe films without breaking vacuum. On native surfaces, oxidation was initially sustained by diffusion of a donor species from the film bulk to the surface, where reaction with oxygen occured. This diffusion process was apparently inhibited on ion irradiated films and direct doping of the film surface effected a gradual reduction in the ion-induced electron accumulation resident at the film surface. The native properties and behavioural characteristics of the films could be recovered by thermal annealing of the ion-irradiated and/or oxidized films at 300–350 °C.     

Growth of Bi-Sb alloy thin films and their characterization by TEM, PIXE and RBS

Polycrystalline bulk materials of Bi₉₃Sb₇ Bi₈₈Sb₁₂, Bi₈₅Sb₁₅ and Bi₈₀Sb₂₀ were synthesized by melt-quench technique starting from the stoichiometric mixture of constituent elements. The phase purity and compositional uniformity of bulk materials were investigated using powder X-ray diffraction (XRD) and proton induced X-ray emission (PIXE) experiments. The single phase formation and the compositional analysis of thin films were confirmed by transmission electron microscopy (TEM) and Rutherford backscattering spectroscopy (RBS). X-ray diffraction studies confirmed the phase homogeneity of the materials. Atomic concentration ratio of constituent elements (Bi and Sb) determined by PIXE and RBS revealed that near-stoichiometric composition is nearly the same in the bulk as well as in thin film forms.     

Diffusion of silicon in titanium nitride films. Efficiency of TiN barrier layers

Two kinds of reactively evaporated titanium nitride films with columnar (B ₀ films) and fine-grained film structure (B ₊ films) have been examined as diffusion barriers, preventing the silicon diffusion in silicon devices. The silicon diffusion profiles have been investigated by 2 MeV ⁴He⁺ Rutherford backscattering spectrometry (RBS) after annealing at temperatures up to 900° C, in view of application of high-temperature processes. The diffusivity from 400 to 900° C: D (m² s^–1)=2.5×10^–18 exp[–31 kJ/mol/(RT)] in B ₀ layers and D (m² s^–1)=3×10^–19 exp[–26 kJ/mol/(RT) in B ₊ TiN layers. The diffusivities determined correspond to grain boundary diffusion, the difference being due to the different microstructure. The very low diffusivity of silicon in B ₊ TiN layer makes it an excellent high-temperature barrier preventing silicon diffusion.     

High-resolution magnetic measurements at surfaces with spin polarized electrons

Observing the spin polarization of emitted electrons reveals surface magnetic information. In particular, high resolving power is achieved in different respects: 1) Magnetic micrography with a lateral resolution of 50 nm in a scanning electron microscope; 2) Non-destructive magnetic depth profiling in the 5–50 Å range with secondary electron emission; 3) Element specific chemical resolution using Auger electron emission; 4) Time-resolved magnetization measurements with pulsed-laser photoemission in less than 10 ns. The state-of-the-art of these techniques is illustrated with specific examples of surface magnetism.     

Ion mixing in Al,Si, and their oxides

The redistribution of thin metallic markers due to ion irradiation was studied by backscattering spectrometry in Al, Al₂O₃, Si, and SiO₂. Marker species were selected for their similar masses and different chemical reactivities with the host media and included Ti, Fe, W, Pt, and Au. It was found that the marker signals are Gaussian and that the variance ² of the marker atom distributions increases linearly with the dose of the irradiation, is insensitive to the temperature of irradiation in the range of 80–300 K, and depends linearly on the nuclear stopping power of the incident ions. The absolute values of ² for Ti, Fe, W, Pt, and Au markers in Al and Al₂O₃, W, and Pt in SiO₂ and W in Si is, within±50 %, of 6.5×10³Å² for 300 keV, 8×10¹⁵ Xe ions/cm². These observations suggest that collisional cascade mixing is a dominant mechanism in this type of impurity-matrix combinations. Only Au and Pt in Si mix at a larger rate: ² for Pt is about 3 and for Au about 5 times larger than ² for all other markers. Lower threshold displacement energies and/or the contribution of processes other than cascade mixing are possible considered reasons. In polycrystalline Al, a rapid migration of Au and Pt atoms throughout the Al layer, similar to grain boundary diffusion, is observed.     

The effects of collisional quenching on degenerate four-wave mixing

We report a theoretical and experimental investigation of the effects of collisional quenching on resonant degenerate four-wave mixing (DFWM). Using single-mode laser radiation, peak signal intensity measurements were performed on an isolated line in the A – X transition of NO. By using appropriate mixtures of N₂ and CO₂ as buffer gases, we varied the collisional quenching rate over several orders of magnitude while maintaining a fixed total collisional dephasing rate. The mixtures had approximately 100 Torr total pressure and were at room temperature. For I/I _sat approximately equal to 0.02, DFWM intensities were found to be less affected by variations in quench rate than were laser-induced fluorescence (LIF) intensities (I and I _sat are the pump laser and one-photon saturation intensities, respectively). Moreover, for I/I _sat roughly equal to 0.5, DFWM intensities were observed to be nearly independent of quench rate. The results are compared to two theoretical predictions, with good agreement observed. Both theories indicate that the minimum sensitivity of DFWM to quenching occurs near I/I _sat1.     

Temperature-dependent sputtering of metals and insulators

The temperature dependence of the sputter yield and the energy spectrum of sputtered atoms have been investigated on the basis of a standard model for thermal spikes. A high-temperature and a low-temperature regime have been identified in the temperature spectrum making up the evaporation yield. The high-temperature component of the yield as well as the associated energy spectrum are only very weakly dependent on ambient target temperature. The relative variation is the less pronounced the higher the spike temperature. The low-temperature component is associated with the long-time behavior of the spike, and measurable evaporation takes place over time intervals where spikes overlap. The importance of time constants for macroscopic heat transport is pointed out. The results are shown to provide a framework within which experimental results on the temperature dependence of the sputter yield of metals can be explained. The results are also consistent with measured temperature dependences in the sputter yield of insulators.On leave from Instytut Fizyki, Uniwersytet Jagiellonski, PL-30-059 Krakow, Poland     

Temperature gradients effects in low-power laser annealing of ion implantedα-Ge

The influence of temperature gradients in laser annealing of-Ge, obtained below the melting threshold, was tested by irradiating the samples with a linear fringe pattern from a pulsed ruby laser. The peak temperature reached on the specimen surface was calculated to be well below the melting threshold of the material. Temperature gradients are observed to enhance the crystallization process in the material. Spontaneous periodic structures, or ripples, having a period equal to the laser wavelength, are frequently observed in areas corresponding to minima of the fringe pattern.Gruppo Nazionale di Struttura della Materia     

A study of blast waveforms detected simultaneously by a microphone and a laser probe during laser ablation

We examine blast waves generated in air during irradiation of absorbing samples with Nd: YAG laser pulses of fluences exceeding the ablation threshold. Blast waves were detected simultaneously by a wideband microphone and a laser beam deflection probe. By a comparative analysis of both signals in the time and frequency domain we investigate characteristic features of their nonlinear waveform evolution. To explain the observed phenomena we employ the weak shock solution of the point explosion model.     

Control of tribological properties of diamond-like carbon films with femtosecond-laser-induced nanostructuring

This paper reports tribological properties of diamond-like carbon (DLC) films nanostructured by femtosecond (fs) laser ablation. The nanostructure was formed in an area of more than 15 mm × 15 mm on the DLC surface, using a precise target-scan system developed for the fs-laser processing. The frictional properties of the DLC film are greatly improved by coating a MoS₂ layer on the nanostructured surface, while the friction coefficient can be increased by surface texturing of the nanostructured zone in a net-like patterning. The results demonstrate that the tribological properties of a DLC surface can be controlled using fs-laser-induced nanostructuring.     

Chemical, morphological and accumulation phenomena in ultrashort-pulse laser ablation of TiN in air

Ultrashort-pulse laser ablation (τ=130 fs, λ=800 nm, repetition rate 2–20 Hz) of titanium nitride was investigated for laser fluences between 0.3 and 4.5 J/cm² using the direct focusing technique in air. The influence of the laser pulse number and the peak fluence was investigated by means of several surface analytical techniques (optical microscopy, dynamic friction atomic force microscopy, scanning Auger electron microscopy and small-spot electron spectroscopy for chemical analysis). The correlation of the results about optical, physical and chemical properties of the irradiated areas allows us to propose a simple oxidation model, which explains different observed phenomena associated with surface damage such as mound formation and crater widening and clarifies the incubation behavior reported earlier for this material. Received: 8 May 2000 / Accepted: 9 May 2000 / Published online: 13 September 2000     

In-situ diagnostics for plasma surface processing

A survey is given of in-situ diagnostics of plasma and surface for application in plasma etching and deposition. Especially those diagnostics that increase the fundamental understanding of the elementary processes occurring both within the plasma and at the surface are highlighted. In general, diagnostics are performed to determine the value of a physical parameter. This value is fed into models of plasma or surface, and in that way the understanding of the process is enhanced. In the paper first the most interesting physical parameters are defined. Subsequently the diagnostic techniques currently available to determine those parameters are reviewed.