Preparation of Ga<Subscript>2</Subscript>Se<Subscript>3</Subscript> thin films by sol–gel technique

In this study we describe the preparation of Ga₂Se₃ semiconductor compound thin films by sol–gel method for different crystal formation temperatures. The films were characterized by X-ray diffraction analyses (XRD), UV–visible spectrometer, and scanning electron microscope (SEM). The XRD spectrum showed that the formation of Ga₂Se₃ crystals were between 743 and 823 K. The thin film crystals that were formed at 773 K corresponded to the β phase and the preferred crystal structure was monoclinic. The value of band gap from optical absorption spectra for the Ga₂Se₃ thin films was estimated to be about E _g ~ 2.56 eV. The thickness of the one-coat Ga₂Se₃ thin films, which was measured by a Spectroscopic Ellipsometer, was about ~200 nm. The average grain sizes of scattered particles were within the limits between 200 and 500 nm.     

Low temperature synthesis of Co<Subscript>2</Subscript>SiO<Subscript>4</Subscript>/SiO<Subscript>2</Subscript> nanocomposite using a modified sol–gel method

The paper presents a study on the preparation of Co₂SiO₄/SiO₂ nanocomposites by a new modified sol–gel method. We have prepared gels starting from tetraethylorthosilicate (Si(OC₂H₅)₄), cobalt nitrate Co(NO₃)₂·6H₂O and some diols: ethylene glycol (C₂H₆O₂), 1,2propanediol (C₃H₈O₂) and 1,3propanediol (C₃H₈O₂), for a final composition: 30% CoO/70% SiO₂. During the heating of the gels at 140 °C, a redox reaction takes place between NO₃ ⁻ ions and diol with formation of some carboxylate anions. These carboxylate anions react with the Co(II) ions to form coordination compounds embedded in silica matrix, as evidenced by FT-IR spectrometry and thermal analysis. These Co(II) coordinative compounds thermally decompose in the range 250–300 °C to the corresponding oxides: CoO and/or Co₃O₄ inside the matrices pores. When CoO results, it reacts with SiO₂ at low temperature leading to Co₂SiO₄, which crystallizes at 700 °C. XRD patterns of the samples annealed at temperatures lower than 700 °C were characteristic to amorphous phases. The samples annealed at temperatures ≥700 °C, contain Co₂SiO₄ (olivine) as unique crystalline phase inside the amorphous silica matrix, according to XRD patterns. As evidenced by TEM images, Co₂SiO₄ nanoparticles are homogenously dispersed inside the silica matrix.     

Preparation and characterization of In<Subscript>2</Subscript>S<Subscript>3</Subscript> semiconductor thin films using the sol–gel method

This study describes the In₂S₃ semiconductor thin film coating on glass substrate by sol–gel method. The In₂S₃ thin film samples were prepared and examined by the X-ray diffraction (XRD), the UV–visible optical absorption and transmission study, and the Scanning Electron Microscope (SEM) image analyses. The XRD analysis results show that the In₂S₃ semiconductor thin films prepared by sol–gel method is formed at T~360–520 °C temperature interval. Band gap energy and optical absorption spectrum analysis of the In₂S₃ thin films reveal that Eg~2.51 eV for the In₂S₃ thin films. According to the EDX result the film was In-rich with the In/S = 1.42 ratio. The thickness of prepared In₂S₃ layer is about 400 nm.     

Characterization of TiO<Subscript>2</Subscript> powders and thin films prepared by non-aqueous sol–gel techniques

Stable TiO₂ sols were prepared using two non-aqueous sol–gel processes with titanium n-butoxide and titanium isopropoxide, respectively. Crystallization and phase transitions of powders and thin films were studied by ex situ and in situ X-ray diffraction. For both methods, TiO₂ began to crystallize around 320 °C in air. Using helium instead of air during heat treatment slowed down the crystallization and substoichiometric powders were formed. TiO₂ thin films were obtained by spin coating. The morphology of the films was evaluated using scanning electron microscopy. The films were homogeneous and transparent in the visible range. The effect of the heating atmosphere and the type of substrate was investigated.     

Novel sol–gel method for preparation of high concentration ε-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>/SiO<Subscript>2</Subscript> nanocomposite

ε-Fe₂O₃/SiO₂ nanocomposite was prepared by novel solgel method using single precursor for both nanoparticles and matrix. This method allows to prepare the samples free of α-Fe₂O₃ with 40% of Fe₂O₃ in SiO₂. Nanoparticles of 12 nm diameter were obtained by annealing at 1,000 °C. The samples were characterized by powder X-ray diffraction and transmission electron microscopy. Mössbauer spectroscopy identified ε-Fe₂O₃ as the only magnetically ordered phase at room temperature. Magnetic measurements revealed progressive necking of hysteresis loops measured at 300 and 2 K. In both cases the intrinsic coercivity reaches only 0.25 T. Measurements up to 14 T shows monotonous decreasing trend of saturated magnetization with increasing temperature.     

Sol–gel synthesis and transport property of nanocrystalline La<Subscript>2</Subscript>Mo<Subscript>2</Subscript>O<Subscript>9</Subscript> thin films

La₂Mo₂O₉ films were successfully synthesized on silicon (100) and poly-alumina substrates via modified sol–gel method with inorganic salts of La(NO₃)₃ and (NH₄)₆Mo₇O₂₄ as precursors. Pure La₂Mo₂O₉ phase was confirmed by XRD if the annealing temperature was higher than 500 °C. Energy dispersive spectrometry (EDS) of TEM revealed that the molar ratio of La to Mo was nearly 1:1. Field-emission SEM characterization showed that the films were dense, crack-free and uniform. The grain size of the films ranged from 30 to 400 nm depending upon the calcination temperature and duration time. The roughness calculated from AFM topography varied in the range between 10 and 35 nm. The thickness of the films was more than 200 nm for single-layered films. The electrical conductivity of the films reaches 0.06 S/cm at 600 °C that was almost more than one order of magnitude higher than that of the corresponding bulk material.     

Electrochromic properties of MoO<Subscript>3</Subscript> thin films derived by a sol–gel process

Molybdenum trioxide (MoO₃) films were deposited on ITO/Glass substrates by the sol–gel method using a spin-coating technique and heat treated at various temperatures under different ambient atmosphere. Effects of the process parameters on the electrochromic properties of MoO₃ films were studied using cyclic voltammetry (CV) in a propylene carbonate (PC) non-aqueous solution containing 1 M lithium perchlorate (LiClO₄). Electrochromic MoO₃ film on lithium intercalation was investigated by in-situ transmittance measurement during the CV process. The MoO₃ films showed reversible recharge ability on Li⁺/e⁻ intercalation/deintercalation. Experimental results revealed that the heat-treatment temperature, the ambient atmosphere, and the thickness will have the string influence on the electrochromic properties of MoO₃ thin films. X-ray diffraction (XRD) results show that the amorphous MoO₃ films can be obtained with the heat-treatment temperature below 300 °C in O₂ ambient atmosphere. The optimum electrochromic MoO₃ film, with a thickness of 130 nm, exhibits a maximum transmittance variation (ΔT%) of 30.9%, an optical density change (ΔOD) of 0.213, an intercalation charge (Q) of 8.47 mC/cm², an insertion coefficient x in Li _x MoO₃ was 0.21 and a coloration efficiency (η) of 25.1 cm²/C between the colored and bleached states at a wavelength (λ) of 550 nm.     

Preparation and characterization of TiO<Subscript>2</Subscript> sol–gel modified nanocomposite films

In this study, the role of TiO₂ MT-150A loading in the polymeric sol was investigated for the synthesis of immobilized TiO₂ nanocomposite films on glass substrate using the MT-150A nanoparticles-modified sol–gel method. The nanocomposite film properties were examined using different material characterization techniques including X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, UV–Vis spectrophotometer, Scotch tape test and pencil hardness test. The hydrophilicity of films during UV/Vis irradiation and storage in a dark place were evaluated by a contact angle analyzer. The MT-150A loading had a significant effect on the amount of crystallite phases in the films. However, increasing the MT-150A loading in the sol resulted in an increase in rutile phase content. In addition, increasing MT-150A loading in the sol yielded films with higher hydrophilicity but a concentration of 10–30 g/L MT-150A in the sol was found as the maximum for obtaining films with good adherence on the glass substrate.     

Sol–gel synthesis and characterization of polycrystalline GdFeO<Subscript>3</Subscript> and Gd<Subscript>3</Subscript>Fe<Subscript>5</Subscript>O<Subscript>12</Subscript> thin films

Thin films of the perovskite and garnet structured gadolinium ferrites GdFeO₃ and Gd₃Fe₅O₁₂ have been synthesized by a sol–gel method, based on stoichiometric mixtures of acetyl acetone chelated Gd³⁺ and Fe³⁺ dissolved in 2-methoxy ethanol. After spin coating onto Si wafers, and heating in air at 700 °C for 20 h, neatly grown essentially single phase films were obtained. From X-ray photoelectron spectroscopy an iron deficiency is observed in the uppermost layer of both films, implying that the crystallites preferably end in planes rich in Gd and O but not in Fe. The films were also characterized by X-ray powder diffraction, scanning electron microscopy, infrared spectroscopy, and magnetic measurements.     

Particulate sol–gel synthesis and optical and electrical properties of CeO<Subscript>2</Subscript>/TiO<Subscript>2</Subscript> nanocomposite

CeO₂/TiO₂ nanocomposite was synthesized by particulate sol–gel method. The X-ray diffractogram shows the presence of cubic CeO₂ and anatase TiO₂ in the composite. The high resolution scanning electron micrographs reveal the nanoparticulate nature of the prepared composite. The composite absorbs UV light and exhibits near-band gap emission corresponding to TiO₂ and deep level emission due to crystal defects. The Nyquist plot displays two semicircular arcs indicating the material heterogeneity. The physicochemical characteristics of the synthesized nanocomposite are in favour of its application as an ingredient of sunscreen formulations; under UV light the photocatalytic activity of CeO₂/TiO₂ composite, tested through the degradation of rhodamine B, is very much less than that by pristine anatase TiO₂. Reduced adsorption of moisture by the nanocomposite is a possible reason for the observed very low photocatalytic activity.     

A study on the effect of synthesis parameters on the size of nickel particles in sol–gel derived Ni–SiO<Subscript>2</Subscript>–Al<Subscript>2</Subscript>O<Subscript>3</Subscript> nanocomposites

The present work deals with the synthesis of Ni–SiO₂–Al₂O₃ nanocomposites fabricated by embedding nickel oxide particles, obtained from hexahydrated nickel nitrate [Ni(NO₃)₂ · 6H₂O], in matrixes with different molar percents of Silica/Alumina, through sol–gel method based on hydrolysis and condensation of tetraethylorthosilicate (TEOS) and Aluminum Isopropoxide [Al(OC₃H₇)₃] alkoxides. Due to the various factors, e.g., pH, EtOH/TEOS/H₂O ratio, Si/Ni ratio etc., influencing the nickel grain size of the nanocomposites, Taguchi robust design method of system optimization was used to determine the percent of contribution (%ρ) of each factor. The nanocomposites were reduced in a flow of hydrogen and nitrogen gas at 700 °C for half an hour. The nickel grain size in the nanocomposites was determined by utilizing Scherrer`s method and XRD patterns. The smallest nickel grain size obtained from the Taguchi orthogonal array was about 24 nm, later confirmed by TEM observations. After optimization of the controlling factors, a nickel grain size of 15.4 nm was obtained. It was found that the SiO₂/Al₂O₃ molar ratio of the matrix had the most influence on the nickel grain size (29.22%) and the Water/TEOS molar ratio stood in second place (21.44%). It was illustrated that the starting temperature of the aluminum isopropoxide had the least influence on the nickel grain size.     

Preparation of LiCoPO<Subscript>4</Subscript> powders and films via sol–gel

Lithium intercalation materials are of special interest as cathodes in rechargeable batteries. An uncomplicated sol–gel process has been used for the synthesis of Li–Co phosphates powders and, for the first time, of LiCoPO₄ films. The powders were prepared from aqueous solutions, containing Li, Co and phosphate precursors to which acid citric and ethylene glycol was added, during the drying process at 75 °C. The X-ray diffraction patterns of the prepared powders confirmed the presence of LiCoPO₄ with an olivine-like structure as main phase. The morphological investigations of the powder showed a platelet-like structure with an average grain size of 0.75 μm. The films of LiCoPO₄ were deposited onto ITO glass substrates with the combination of the dip-coating process under the same conditions. Finally, the films were annealed in inert atmosphere at 300 °C. The morphological investigations reveal a smooth and homogeneous surface of the prepared Li–Co phosphate films. The preliminary electrical investigation on the prepared LiCoPO₄ films showed lithium ions electrochemical activity in the range 3.0–4.5 V.     

NiTiO<Subscript>3</Subscript> nanoparticles encapsulated with SiO<Subscript>2</Subscript> prepared by sol–gel method

NiTiO₃ (NTO) nanoparticles encapsulated with SiO₂ were prepared by the sol–gel method resulting on core-shell structure. Changes on isoelectric point as a function of silica were evaluated by means of zeta potential. The NTO nanoparticles heat treated at 600°C were characterized by X-ray diffraction, transmission electron microscopy (TEM) and energy dispersive X-ray analysis. TEM observations showed that the mean size of NTO is in the range of 2.5–42.5 nm while the thickness of SiO₂ shell attained 1.5–3.5 nm approximately.     

Preparation of CuAlO<Subscript>2</Subscript> thin films with high transparency and low resistivity using sol–gel method

CuAlO₂ thin films were deposited on quartz substrates by sol–gel process using copper acetate monohydrate and aluminum nitrate nanohydrate as starting materials and isopropyl alcohol as solvent. The influence of annealing temperature on the film structure and the phase evolution of CuAlO₂ films were investigated, so as to obtain CuAlO₂ films with superior performance. The phase compositions of the films were dependent on the annealing temperature. The films annealed at temperatures below 400 °C were amorphous while those annealed above 400 °C were polycrystalline. The phases of CuO and CuAl₂O₄ appeared gradually with the increase of annealing temperature. When the heat treatment temperature was elevated to 900 °C, the uniform and dense films with single phase of CuAlO₂ were obtained, with a resistivity of 15 Ωcm. The transmittance of the 310 nm-thick CuAlO₂ film is 79% at 780 nm and the direct optical band gap is 3.43 eV.     

Effect of amine catalysts on preparation of nanometric SiO<Subscript>2</Subscript> particles and antireflective films via sol–gel method

SiO₂ sols were prepared by hydrolysis and condensation reactions of tetraethyl orthosilicate through a one step acid or a two step acid + base catalysis process, in the presence of nitric acid and four different base catalyzers, namely trimethylamine, triethylamine, tripropylamine and tributylamine. Hydrolysis of TEOS was followed by FT-IR analyses. Particle size distributions of the sols were evaluated after predetermined durations in 1–22 days. Particle growth was seen to be faster in amine catalyzed systems than in one step acid catalyzed system. The highest rate of growth was in triethylamine catalyzed system. Glass substrates were dip coated with the prepared SiO₂ sols. Effect of sol aging duration on film thickness and on light transmittance properties of the films was investigated with respect to type of base catalyst. Thicknesses of the films which were measured to be in the range of 100–400 nm, were seen to increase with aging duration of the sols. Triethylamine catalyzed system presented the highest film thickness. Films obtained from one step acid catalyzed system presented an increase of 4.8%; whereas acid + base catalyzed films provided an increase in the light transmittance of 5.7% in the first 4 days of aging. Surfaces of films were examined by FESEM and AFM. The antireflective character of the films was verified by diffuse reflectance analyses.     

Structure and multiferroic properties of Bi<Subscript>5</Subscript>FeTi<Subscript>3</Subscript>O<Subscript>15</Subscript> thin films prepared by the sol–gel method

The Bi₅FeTi₃O₁₅ (BFTO) films of layered structure have been fabricated on Pt/Ti/SiO₂/Si substrates by the sol–gel method. The thermal decomposition behaviors of precursor powder were examined using thermo-gravimetric and differential scanning calorimeters analysis. The optimal heat treatment process for BFTO films were determined to be low-temperature drying at 200 °C for 4 min and high-temperature drying at 350 °C for 5 min followed by annealing at 740 °C for 60 min, which led to the formation of compact films with uniform grains of ~300 nm. The structural, surface topography, ferroelectric and magnetic properties of the films were investigated. The remnant polarization (2P _r) of BFTO thin films under an applied electric field of ~550 kV/cm are determined to be 67.5 μC/cm² . Meanwhile, the weak ferromagnetic properties of the BFTO films were observed at room temperature.     

Simple sol–gel route to synthesis of mesoporous TiO<Subscript>2</Subscript>

Mesoporous TiO₂ with a high specific surface area was prepared from titanium sulfate solution in a simple sol–gel route, where formamide was used as pH adjusting agent. TiO₂ had a high resistance to phase transformation, and maintained monophasic anatase after calcinating at 600 °C. The highest specific surface area achieved on the prepared samples is 231.90 m² g⁻¹ after calcinating at 450 °C.     

Growth and characterization of (K<Subscript>0.5</Subscript> Na<Subscript>0.5</Subscript>)NbO<Subscript>3</Subscript> thin films by a sol–gel method

(K_0.5 Na_0.5)NbO₃ (KNN) perovskite materials have been developed as a promising lead-free piezoelectric material for environmentally benign piezoelectric devices. KNN films with about 320 nm thickness were fabricated on Pt(111)/SiO₂/Si(100) substrates by a sol–gel method from stoichiometric and A-site ion excess precursor solutions. Two different annealing methods were also used to investigate the crystallographic evolution of the films. A layer-by-layer annealing process results in highly (001) oriented KNN from the annealing temperature of 550 °C, while the final annealing method leads to weaker crystalline peaks with a random orientation. The KNN films from the K and Na excess precursor solutions show similar crystallization behavior. However, the ferroelectric hysteresis loops of the films were greatly improved by compensating for an A-site vacancy. In particular, the KNN films from K-excess precursor solutions show better ferroelectric properties compared to the films prepared from Na excess solutions.