ω(→ π+π?π0) meson photoproduction on proton

The cross-section for the π ⁺ π ⁻ π ⁰ invariant mass distribution in the γp reaction in the GeV region is calculated. This reaction is assumed to proceed through the formation of the ω-meson in the intermediate state, because the production cross-section for this meson in the γp reaction in the GeV region is significant and it has a large branching ratio (88.8%) in the π ⁺ π ⁻ π ⁰ channel. The cross-sections for this reaction are calculated using the energy-dependent reaction amplitude, f _γp→ωp(0), extracted from the latest ω-meson photoproduction data. We use established procedure to calculate other factors, like width and propagator of the ω-meson, so that our calculation can provide reliable cross-section. The calculated results reproduce the measured π ⁺ π ⁻ π ⁰ invariant mass distribution spectra in the γp reaction.     

Adsorption of methyl orange on mesoporous γ-Fe2O3/SiO2 nanocomposites

Mesoporous γ-Fe₂O₃/SiO₂ nanocomposite containing 30 mol% of γ-Fe₂O₃ was prepared by a template-free sol-gel method, and its removal ability for methyl orange (MO) was investigated. The nanocomposite was characterized using X-ray powder diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscope (SEM), Fourier transform infrared (FTIR) absorption measurements, nitrogen adsorption-desorption measurements, and magnetic measurements. The synthesized γ-Fe₂O₃/SiO₂ nanocomposite has a mesoporous structure with an average pore size of 3.5 nm and a specific surface area of 245 m²/g, and it exhibits ferrimagnetic characteristics with the maximum saturation magnetization of 20.9 emu/g. The adsorption of MO on the nanocomposite reaches the maximum adsorbed percentage of ca. 80% within a few minutes, showing that most of MO can be removed in a short time. The MO adsorption data fit well with both Langmuir and Freundlich adsorption isotherms. The maximum adsorption capacity of MO is estimated to be 476 mg/g.     

Study on the Structure of Hypernuclei ΛΛ5H,ΛΛ5He,ΛΛ4He and ΛΛ4H

In this paper, double Λ binding energies B_ΛΛ s of _ΛΛ⁵He(_ΛΛ⁵H), AA4He and _ΛΛ⁴H are calculated with the help of few-body models. The results show that stable binding state for _ΛΛ⁵H or _ΛΛ⁵He exists definitely with B_ΛΛ(_ΛΛ⁵H)=6.75MeV and B_ΛΛ(_ΛΛ⁵He)=7.67MeV,respectively. As to _ΛΛ⁴He and _ΛΛ⁴H, preliminary results indicate that _ΛΛ⁴H is unstable against decaying into Λ+_Λ³H, and _ΛΛ⁴He has no binding state.     

S wave of pion-pion scattering from data on the reaction π?p → π0π0n

The results of recent experiments performed at KEK, Brookhaven National Laboratory, the Institute for High-Energy Physics (Protvino), and CERN to study the reaction π ⁻ p → π ⁰ π ⁰ n are analyzed in detail. For S-wave pion-pion scattering in the channel of isospin I=0, new data are obtained for the phase shift δ ₀ ⁰ and the inelasticity parameter η ₀ ⁰ . Difficulties that arise in using, for the amplitudes of the S and D waves of the final π ⁰ π ⁰ system, physical solutions selected on the basis of partial-wave analyses are discussed. It is noteworthy that other solutions are preferable in principle in the region of the invariant mass m of the π ⁰ π ⁰ system above 1 GeV. With the aim of clarifying the situation and further studying the properties of the f ₀(980) resonance, it is proposed to perform, in the reaction π ⁻ p → π ⁰ π ⁰ n, an especially careful examination of the m region in the vicinity of the threshold. __________ Translated from Yadernaya Fizika, Vol. 67, No. 7, 2004, pp. 1380–1391. Original Russian Text Copyright ? 2004 by Achasov, Shestakov.     

The epitaxial growth of BaSnO3 buffer layer on IBAD-MgO template and its effects on GdBa2Cu3O7−δ film: A preliminary study

We report a successful fabrication of c-axis oriented GdBa₂Cu₃O_7−δ (GdBCO) films on the BaSnO₃ (BSO) buffer layers on ion-beam assisted deposition (IBAD)-MgO template by pulsed-laser deposition (PLD). The (0 0 l) growth and in-plane textures of BSO buffer layers were found sensitive to the substrate temperature (T_s). With increasing the BSO layer thickness up to ∼165 nm, in-plane texture (Δ? ∼ 6.2°) of BSO layers was almost unaltered while completely c-axis oriented BSO layers were obtainable from samples with the thickness below ∼45 nm. On the BSO buffer layers showing in-plane texture of 6.2° and RMS surface roughness of ∼8.6 nm, GdBCO films were deposited at 780–800 °C. All GdBCO films exhibited Δ? values of 4.6–4.7°, T_c,zero of ∼91 K, and critical current density (J_c) over 1 MA/cm² at 77 K in a self-field. The highest J_c value of 1.82 MA/cm² (I_c of 51 A/cm-width) was achieved from the GdBCO film deposited at T_s of 790 °C. These results support that BSO can be a promising buffer layer on the IBAD-MgO template for obtaining high-J_c GdBCO coated conductors.     

Structural and superconductivity study on α-FeSex

We have successfully synthesized the α-FeSe_x binary tetragonal superconductors with nominal composition of FeSe_x (x=0.6-1.0) via conventional solid state reactions between Fe and Se sealed in quartz tubes. Fe and β-FeSe are the most commonly seen impurities in this binary system. A low-temperature annealing at 400 °C is found to be crucial to remove β-FeSe, which is the thermodynamic stable phase with hexagonal symmetry. For all the samples of FeSe_x, superconductivity is confirmed by magnetic measurements as well as resistivity measurements with their T_c at around 8 K. We noticed that their T_c does not vary with the different nominal Se amount. High-resolution synchrotron X-ray diffraction analysis revealed that the unit cell parameters of all these samples do not change within the error range, and their structure only tolerate the same very small amount of Se deficiency. Based on this study, we concluded that the α-FeSe_x superconductor only exist in a very narrow deficiency range.     

Effects of K4CuNb8O23 on phase structure and electrical properties of K0.5Na0.5NbO3–LiSbO3 lead-free piezoceramics

Dense K₄CuNb₈O₂₃ (KCN) modified 0.948K_0.5Na_0.5NbO₃–0.052LiSbO₃ (KNNLS) ceramics were prepared by conventional solid state reaction method. The effect of addition of K₄CuNb₈O₂₃ liquid phase sintering aid on the phase structure and electrical properties of ceramics was studied. Results showed that K₄CuNb₈O₂₃ induced a perovskite structure transition from coexistence of orthorhombic and tetragonal phases to orthorhombic symmetry. The addition of K₄CuNb₈O₂₃ promoted the sintering of KNNLS ceramics. In particular, the K₄CuNb₈O₂₃ addition to the KNNLS greatly improved the mechanical quality factor Q_m value. The ceramics with x=0.8 sintered at 1090 °C possess the optimum properties (Q_m=192, d₃₃=135 pC/N, tan δ=0.024 and k_p=0.357). These results indicate that the ceramic is a promising candidate for lead-free high-power piezoelectric devices, such as piezoelectric actuators, transformers and filter materials.     

Microstructure and electrode properties of La0.6Sr0.4Co0.2Fe0.8O3-δ spin-coated on Ce0.8Sm0.2O2?δ electrolyte

Fine and uniform La_0.6Sr_0.4Co_0.2Fe_0.8O_3−δ powder was synthesized by a glycine–nitrate combustion process. La_0.6Sr_0.4Co_0.2Fe_0.8O_3−δ electrodes were prepared on dense Ce_0.8Sm_0.2O_2−δ electrolyte substrates using a spin-coating technique by sintering at 900–1,000 °C. The electrode properties of La_0.6Sr_0.4Co_0.2Fe_0.8O_3−δ were investigated by electrochemical impedance spectroscopy and chronopotentiometry techniques with respect to preparation conditions and the resulting microstructures. The results indicate a significant effect of the microstructure on the electrode processes and polarization characteristics. The oxygen adsorption and dissociation process acted as a larger contribution to the overall electrode polarization R _p in magnitude compared with the charge transfer process due to relatively low porosity levels of the electrodes. It was detected that the grain size of the electrodes exhibited a crucial role on the electrocatalytic reactivity. At 800 °C, the electrode sintered at 950 °C attained a polarization resistance of 0.18 Ω cm², an overpotential of 27 mV at a current density of 200 mA cm⁻², and an exchange current density of 308 mA cm⁻².     

Additional Y3+ Doping Effect on Ferromagnetism of Ce0.97Co0.03O2-δ Compounds

Y^3＋ doping effect on magnetic properties of Ce0.97Co0.03O2-δ are examined. Vibrating sample magnetometer （VSM） measurements indicate that Ce0.97Co0.03O2-δ is ferromagnetic at room temperature. The saturated magnetization Ms is altered by additional Y^3＋ doping, i.e., with the increase of the amount of Y^3＋ doping concentration in Ce0.97-yYyCo0.03O2-δ（y = 0.01, 0.05 and 0.10）, Ms increases persistently, Raman spectra measurements indicate that additional oxygen vacancies are introduced with the amount of Y^3＋ doping content. The results can be well elucidated by the F-centre exchange coupling （FCE） mechanism proposed recently, thus they are important for understanding the ferromagnetism origination in transitional metal-doped insulating oxides.     

Electrodeposition of TiO2–RuO2–IrO2 coating on titanium substrate

TiO₂, RuO₂, and IrO₂ transition metal oxides have many applications in the field of applied electrochemistry. In this work, the mixed solid solutions of TiO₂–RuO₂–IrO₂ coatings have been electrodeposited from aqueous–unaqueous baths.     

Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate

This paper reports that/3-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si（111） substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction,Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown β-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100 nm to 200 nm and lengths typically up to 2μm. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.     

Influence of hydrothermally modified γ-Al2O3 on the properties of NiMo/γ-Al2O3 catalyst

The influence of hydrothermal modification of γ-Al₂O₃ on the properties of NiMo/γ-Al₂O₃ catalyst was investigated in this paper. The experimental results showed that the use of the modified γ-Al₂O₃ in the preparation of the NiMo/γ-Al₂O₃ catalyst led to the increase of the dispersion of the surface Mo and Ni oxides, favored the formation of the poly-molybdates and promoted the reduction of the active Mo oxides owing to the increase of the surface acidity of the modified γ-Al₂O₃. Therefore, the NiMo/γ-Al₂O₃ catalyst supported on the modified γ-Al₂O₃ exhibited a higher hydrodenitrogenation (HDN) activity than that supported on the untreated γ-Al₂O₃ in the temperature range of 300-340 °C.     

Sol–gel derived ferroelectric Bi3.15Nd0.85Ti3O12 thin films of predominant 100/010/119 orientation deposited both on Nb-doped (011)SrTiO3 and on (011)SrRuO3/(011)SrTiO3

Ferroelectric Bi_3.15Nd_0.85Ti₃O₁₂ (BNdT) thin films of predominant 100/010/119 orientation were grown through a cheap and simple sol–gel process both on Nb-doped (011)SrTiO₃ and on (011)SrRuO₃/(011)SrTiO₃. Using rapid heating rates during crystallization, films containing 28% (100)/(010)-oriented grains plus 19% (119)-oriented grains were obtained on SrRuO₃/SrTiO₃, while 30% (100)/(010)- and 18% (119)-oriented grains were obtained on Nb:SrTiO₃. The films consist of columnar grains and 90° a–b domains exist in large BNdT grains. The BNdT thin films exhibit excellent ferroelectric and dielectric properties with a remanent polarization 2P_r=39.2 μC/cm² and a dielectric constant ε_r=184.5. PACS 77.80.Fm; 77.80.Dj; 68.60.Wm; 68.55.Jk; 68.37.Lp     

The role of copper species on Cu/γ-Al2O3 catalysts for NH3-SCO reaction

UV-vis spectra, XRD, H₂-TPR, TEM and ESR were used to characterize a series of Cu/γ-Al₂O₃ catalysts, which were prepared by incipient wetness impregnation using copper nitrate, copper acetate or copper sulfate as precursors, to study the role of Cu species on Cu/γ-Al₂O₃ catalysts for NH₃-SCO reaction. It was found that the mixture of CuO phase and CuAl₂O₄ phase formed on various Cu/γ-Al₂O₃ catalysts, and the Cu species and dispersion had significant influence on the Cu/γ-Al₂O₃ activity. Highly dispersed CuO phase on the support would be related with its high activity for the NH₃-SCO reaction.     

Sr doping effects on the transport and magnetic properties of GdBaCo2O5+δ

Studies on some new members of the cobalt perovskite Gd_1−xSr_xBaCo₂O_5+δ with low strontium concentrations (0<x<0.1) have been carried out with the aim of investigating possible metallization of the GdBaCo₂O_5+δ system by hole doping. Low temperature electrical resistivity, magnetic susceptibility and thermopower of the above system have been studied. The pristine compound with x=0 and δ∼0.5 exhibits a semiconductor-like behavior and two magnetic transitions below room temperature. Upon Sr²⁺ substitution, there is a fall in resistivity by 2-3 orders of magnitude at low temperature and also a dramatic reduction in the ferromagnetic to antiferromagnetic transition temperature. These changes can be explained on the basis of hole doping (and increase in the Co⁴⁺content). Evidence for an increase in Co⁴⁺ with Sr²⁺ substitution is provided by iodometric analysis.     

Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunction

In this paper, we propose the near-infrared p-type β-FeSi₂/n-type 4H-SiC heterojunction photodetector with semiconducting silicide (β-FeSi₂) as the active region for the first time. Optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature. The results show that the photodetector has a good rectifying character and a good response to the near-infrared light. Interface states should be minimized to obtain a lower reverse leakage current. The response spectrum of the β-FeSi₂/4H-SiC detector, which consists of a p-type β-FeSi₂ absorption layer with a doping concentration of 1×10¹⁵ cm^-3 and a thickness of 2.5 μm, has a peak of 755 mA/W at 1.42 μm. The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi₂ side. The results illustrate that the β-FeSi₂/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.     

Sustained high βN plasmas on EAST tokamak

Sustained high normalized beta (${\beta }_N～1.9$) plasmas with an ITER-like tungsten divertor have been achieved on EAST tokamak recently. The high power NBI heating system of 4.8 MW and the 4.6 GHz lower hybrid wave of 1 MW were developed and applied to produce edge and internal transport barriers in high ${\beta }_N$ discharges. The central flat q profile with $q(\rho )～1$ at $\rho <0.3$ region and edge safety factor $q_{95}=4.7$ is identified by the multi-channel far-infrared laser polarimeter and the EFIT code. The fraction of non-inductive current is about 40%. The relation between fishbone activity and ITB formation is observed and discussed.     

Effects of BaCu（B2O5 ） addition on sintering temperature and microwave dielectric properties of Ba5Nb4O15–BaWO4 ceramics

The effects of BaCu(B2O5)(BCB) addition on the microstructure, phase formation, and microwave dielectric properties of Ba5Nb4O15–BaWO4ceramic are investigated. As a sintering aid, BaCu(B2O5) ceramic could effectively lower the sintering temperature of Ba5Nb4O15–BaWO4ceramic from 1100?C to 950?C due to the liquid-phase effect. Meanwhile,BaCu(B2O5) addition effectively improves the densification of Ba5Nb4O15–BaWO4ceramic and significantly influences the microwave dielectric properties. X-ray diffraction analysis reveals that Ba5Nb4O15and BaWO4coexist with no crystal phase of BaCu(B2O5) in the sintered ceramics. The Ba5Nb4O15–BaWO4ceramics with 1.0 wt% BaCu(B2O5) sintered at 950?C for 2 h presents good microwave dielectric properties of εr = 19.0, high Q × f of 33802 GHz and low τfof2.5 ppm/?C.     

Surface reconstruction on stishovite SiO2,HfO2 and rutile TiO2 （001）

This paper systematically investigates the surface reconstruction processes and patterns on stishovite SiO 2,HfO 2 and rutile TiO 2 (001) by using classical molecular dynamics.It is found that these three surfaces relax instead of reconstruction at 0 K,and have little possibility to reconstruct below 40 K.Above 40 K,surface reconstructions take place as collective atomic motion which can be speeded by higher temperature or compressed strain.Several reconstruction patterns with approximate surface energies are found,and electrostatic potentials on them are also provided in comparison with possible microscopic results.     

Influences of Pressure and Substrate Temperature on Epitaxial Growth of γ-Mg2SiO4 Thin Films on Si Substrates

An epitsucial γ-Mg2SiO4 thin film can be a good buffer between the Si substrate and some oxide thin films. For high temperature superconducting multilayer structures, hopefully it can be taken as an insulating layer to replace the widely used MgO film. To explore such possibilities, we carry out systematic studies on the influences of pressure and substrate temperature on the epitaxy of γ-Mg2SiO4 thin films grown on Si （100） substrates using rf magnetron sputtering with an Mg target of purity of 99.95 percent. With the substrate temperature kept at 500℃ and the pressure changing from lO Pa to 15 Pa, in the XRD spectra the 7-Mg2SiO4 （400） peak grows drastically while the MgO （200） peak is suppressed. Keeping the pressure at 15Pa and increasing the temperature from 500℃ to 570℃ further can improve the film epitaxy, while working at 780℃ and 11Pa seems to give very good results. X-ray photoelectronic spectroscopy and φ scan are used to characterize the stoichiometry, crystallinity, and in-plane growth of the samples.