Influence of intrinsic defects on light-induced changes in the refractive index of lithium niobate crystals

3 crystals at continuous-wave illumination are reported. The investigation clearly indicates an increase in the photorefraction amplitude Δn_s (at saturation) with light intensity J for all crystals studied. The main result is a correlation between ∂(Δn_s)/∂J and the density N of intrinsic defects such as Nb_Li. This effect is independent of the accidental iron contamination. Therefore at low J, Δn_s decreases with an increase in N, whereas at high J the opposite dependence is observed. The threshold intensity value of such a transformation correlates with the optical quality of the crystal. It has been established that these photorefraction changes are connected with the light induced absorption of the secondary centers, caused by the existence of the metastable small polarons at room temperature during illumination. Received: 7 January 1997/Revised version: 7 February 1997     

Light-induced acoustic effect in LiNbO3：Fe：Ce crystals

The phenomena of acoustic emission in LiNbO3：Fe：Ce crystals have been observed in the process of light-induced quasi-breakdown. It is found that the ultra-high frequency acoustic signal introduced into the crystal is modulated by the low frequency acoustic waves. Its frequency increases with the increase of the intensity of incident light and its jump period of breakdown is the same as that of the photovoltaic current Ic, the change of light-induced refractive index △n and the diffracted light intensity L. This phenomenon has been analysed in this paper, which is caused by the inverse piezoelectric strain effect of the jump of space charge field during the quasi-breakdown.     

Thermally and photostimulated recombination processes in PbWO4 crystals at low temperatures

We have studied thermally and photostimulated recombination processes in PbWO₄ crystals in the temperature interval 90–295 K. We have shown that after x-ray excitation of the crystal at 90 K, the thermally stimulated luminescence curve shows a relatively intense peak at 110 K and weak peaks at about 173, 191, and 232 K. Exposure of the PbWO₄ crystal to IR radiation after excitation by x-ray photons leads to the appearance of photostimulated flash luminescence, a significant decrease in the intensity of the 110 K peak, and a shift of that peak to the 116 K region. But long-wavelength illumination has less of an effect on the intensity and position of the higher temperature peaks. It is assumed that F⁻ centers are formed in the PbWO₄ crystal at 90 K during x-ray exposure. The thermal light sum released by IR illumination in the temperature region 90–150 K has a maximum at ≈108 K. The nature of this maximum is connected with the complex centers [Pb³⁺ + (WO_3-F⁻)]. Optical and thermal degradation of these centers leads to the appearance of emission in the green region of the localized exciton spectrum.     

Photon-induced switching and tunneling phenomena in a YBCO thin film junction

In the persistent photoconductivity (PPC) phenomenon, illumination of a YBa₂Cu₃O_6.5 thin film junction with a 1mW He−Ne laser leads to the decrease of the critical voltage (similar to the threshold voltage). The decrease of the critical voltage was reversed by illumination with incandescent light. The critical voltage across the junction was experimentally decreased and increased by alternating illumination between He−Ne laser and incandescent light. We also observed visible quenching of the photo-induced state using a 5mW He−Ne laser. Finally, the threshold behavior of the junction was destroyed by illuminating it with incandescent light.     

Light intensity and temperature dependence on performance of a photoelectrochemical cells of ITO/TiO<Subscript>2</Subscript>/PVC-LiClO<Subscript>4</Subscript>/graphite

The photovoltaic characteristics of a photoelectrochemical cell of ITO/TiO₂/PVC-LiClO₄/graphite are reported. This paper is concerned with the influence of light intensity and temperature on short-circuit current density, J_sc and open-circuit voltage, V_oc of the device. The photoelectrochemical cell material was a screen-printed layer of titanium dioxide onto an ITO-covered glass substrate, which was used as a working electrode of the cell. The solid electrolyte was polivinylchloride-lithium perchlorate. The graphite film serves as a counter electrode of the cell. The current density–voltage characteristics of the device under an illumination of 20, 40, 60, 80 and 100 mW cm⁻² light from a tungsten halogen lamp were recorded at 40 °C as well as under an illumination of 100 mW cm⁻² at 30, 35, 40, 45 and 50 °C, respectively. It was found that the short-circuit current density, J_sc of the device increases with both light intensity and temperature. The J_sc obtained at 100 mW cm⁻² was 1.0 μAcm⁻² and that at 50 °C was 0.7 μAcm⁻².     

TiO2–carbon nanotube composites for visible photocatalysts – Influence of TiO2 crystal structure

We investigated the influence of the crystal structure of TiO₂ and the use of different TiO₂ precursors on the properties and photocatalytic activity of carbon nanotube (CNTs)–titania composites. We found that the crystal structure and properties of starting TiO₂ nanomaterial significantly affected the effect of CNTs incorporation on the photocatalytic activity under simulated solar and visible light illumination (simulated solar illumination with UV-blocking filter). In case of significant photocatalytic activity under visible light illumination (anatase TiO₂), likely due to the presence of native defects, composites exhibited lower activity under visible illumination only, but higher activity under simulated solar illumination. The opposite trends were observed for P25 (anatase + rutile) and rutile TiO₂, where incorporation of CNTs resulted in a significant increase of photocatalytic activity under visible illumination. Thus, control over crystal structure and native defects is essential for the development of efficient visible light activated photocatalysts.     

Experimental evidence of photoinduced valence change of Fe3+ in BaTiO3 and mechanism for growth of new grating in depleted pump condition: An EPR investigation

With a view to understanding the role of photo-induced valence changes of impurities in BaTiO₃ in the phenomena of photorefraction, EPR experiments were conducted under in situ He-Ne laser illumination. These experiments gave evidence for photoinduced valence change of Fe in BaTiO₃ at room temperature. The EPR signal due to trivalent iron was found to reduce in intensity with laser illumination The kinetics of the valence change has been investigated. Under large fringe width condition, the time constant of the decay is identified as the dielectric relaxation time τ_d. The changes in line shape on laser illumination to Dysonian form, appeared most predominantly in mechanically poled crystal compared to electrically poled single domain crystals. This demonstrated the possible role of domain walls and the defects there, as source or sinks of charge carriers on photo excitation. It is observed, that there is transient growth of Fe³⁺, when the laser illumination was put on, before its decay. This was attributed to charge transfer between electrons in oxygen vacancies and Fe⁴⁺. This predicted the growth of a transient grating under depleted pump condition in a two beam coupling experiment. This was experimentally proved by following the diffracted signal of the reading beam under the depleted pump condition.     

The temperature and light intensity dependence of photorefraction in LiNbO3

In the paper the dependence of the photorefraction (PhR) in LiNbO₃ and LiNbO₃−Fe (0.1 wt%, 0.3wt%) crystals on light intensity (within 10¹⁶–10²³ quanta·cm⁻²·s⁻¹ at wavelengths 496.5 nm and 600 nm) and temperature (in the region 100–500 K) is studied. For all the crystals the limiting values of PhR are similar and atT=293 K Δn _sat ^lim ≈3·10⁻³. In LiNbO₃ the temperature dependence of PhR in the range 100–500 K requires to take into account at least two trapping centres.     

Nonlinear light absorption on the surface of a transparent wide-gap crystal: I. Direct interband transitions

For a semi-infinite wide-gap crystal, expressions for the rates of one- and two-photon transitions caused by the action of linearly polarized light are obtained in the basis set of model surface and bulk functions. The transition probability is shown to significantly depend on the angle between the light polarization vector and the normal to the surface Ψ. At a light intensity of 10 MW/cm², the probability of one-photon transitions between surface states is in the range 10²⁴−10²⁶ s⁻¹ cm⁻² (ψ = π/2 and ψ = 0, respectively). It is shown that, in the case wherein the light polarization vector is perpendicular to the surface, the rates of allowed n-photon transitions (n = 1, 2) decrease more slowly with increasing n than in the case in which the polarization vector lies in the plane of the surface.     

Features of the formation of X-ray images in birefringent crystals

The results of studying the birefringence effect on the spatial structure of X-ray images (XRIs) under illumination of the diffracting anisotropic-crystal surface by a spatially modulated light beam are presented. It is shown that the XRI resolution decreases in the case when the temperature field determining the spatial XRI structure is formed by a light beam propogating through the crystal and is absorbed at the interface between the diffraction region and the absorbing coating.     

Effect of infrared illumination on the modulated magnetic structure of the weak ferromagnet FeBO<Subscript>3</Subscript>: Mg

The effect of unpolarized white light on the period and conditions of the existence of the modulated magnetic structure of the FeBO₃: Mg single crystal, which is formed in this easy-plane weak ferromagnet in the low-temperature range during technical magnetization, has been investigated experimentally. It has been revealed that the degree of light action on the magnetic state of the crystal depends on both the irradiation duration and the orientation of the ferromagnetic vector during illumination. It has been established that light with wavelengths in the range 0.8 μm < λ < 0.9 μm has a maximum effect on the parameters of the modulated magnetic structure formed in the FeBO₃: Mg single crystal. The results obtained have been interpreted in the framework of the “magnetic ripple” theory using the model of photosensitivity of anisotropic magnetic centers associated with the presence of Mg impurity ions in the composition of the crystal.     

Influence of surroundings on photorefractive effect in lithium niobate crystals

In the paper results of the investigation of the influence of electric properties of the environment surrounding LiNbO₃ crystals on photorefractive effect induced in these crystals by Gaussian Ar⁺ laser beam with various intensities are presented. We show spatial and temporal dependences of changes of the refractive index obtained experimentally in LiNbO₃: Fe and LiNbO₃: Fe:Mn samples surrounded by media with different electric conductivities and different permittivities (water, air, water solution of CaCl₂). The space and time dependences of the refractive index changes induced by the Ar⁺ laser beam are observed by means of the Mach–Zehnder interferometer using light from HeNe laser. The experimentally obtained results are in a good agreement with those following from numerical calculations using the manifold mirroring method. The agreement between calculated and experimental results indicates that the polarization charge at the photorefractive crystal/surrounding medium boundary significantly influences the photorefractive process in the crystal. The experimentally observed slow spontaneous decrease of the refractive index change in a sample placed into a slightly conducting medium (air) after switching off the beam also indicates that the polarization charge in the sample's surroundings affects the photorefraction.     

Photoinduced changes in the space-modulated magnetic order of a FeBO<Subscript>3</Subscript>:Mg single crystal

An effect of nonpolarized white light on the modulated magnetic structure of a FeBO₃:Mg single crystal, which arises in this light-plane weak ferromagnet in the low temperature range during technical magnetization, has been revealed. It has been found that the degree of the light action on the magnetic state of FeBO₃:Mg depends both on its duration and on the orientation of the spontaneous magnetization vector M of the crystal during illumination. Interpretation of the results obtained has been performed in the context of the “magnetic ripple” theory on the assumption that the absorbed light induces additional uniaxial magnetic anisotropy in the easy plane of the crystal and that the anisotropy axis is collinear to the vector M during illumination.     

Hf-sputtered indium oxide films doped with tin

Indium oxide films doped with tin (ITO-films) have been hf-sputtered from an 80 at-%In₂O₃/20 at-%SnO₂ target onto glass substrates. The sputter atmosphere contained mainly argon (10⁻²Torr) with addition of oxygen (0≦p _{O 2}≦2·10⁻²Torr). The sputtered films aren-conductors. The conductivity and density of charge carriers depend on the oxygen content of the sputter gas. They could be varied by two orders of magnitude. In air or in oxygen atmosphere the films oxidize at the surface and for a certain depth beneath the surface, thus decreasing the conductivity. The Hall mobility of the sputtered films is smaller (≈10 cm²V⁻¹ s⁻¹) than one observes at ITO films produced by CVD sparaying or other methods. The conductivity of as sputtered films approached maximum values of about 1000Ώ⁻¹cm⁻¹.     

Oxygen ion diffusion in perovskite-type oxides determined by permeation and by relaxation measurements

Oxygen ion diffusion in oxides of the perovskite-type structure was determined by two methods of measurement: i) stepwise change of temperature or oxygen partial pressure of the gaseous environment of a ceramic sample, and measurement of the relaxation of electrical conductivity or oxygen content, ii) oxygen permeation through a gas dense oxide ceramic pellet from air to argon. The experimental problems and sources of errors, calculation methods of chemical diffusion coefficients and oxide ionic conductivities from these two modes of investigation are discussed. The comparison of relaxation and permeation measurements on 10 oxides of the type A_1−aA′_aM_1−bM′_bO_3−σ (A=La, Pr, Ce; A′=Sr, Ca; M=Mn, Fe; M′=Co, Ni) show advantages of the relaxation method in relation to the experimental performance and possible errors.     

Effect of dissipation on the properties of surface polaritons in GaAs/AlGaAs heterojunctions in a quantizing magnetic field

A study is reported of nonradiative surface and bulk polaritons in GaAs/Al_xGa_1−x As real heterojunctions under conditions favoring integer-quantum Hall effect (IQHE) and in the presence of dissipation in a two-dimensional electron layer. The conditions of their existence, the spectrum, and damping have been determined. It is shown that under IQHE conditions all aspects of surface and bulk polaritons are quantized. It is found that, as the wave number is varied, surface and bulk polaritons can transform continuously into one another. The possibilities of experimental observation of nonradiative polaritons are discussed. Fiz. Tverd. Tela (St. Petersburg) 41, 705–711 (April 1999)     

Influence of the illumination on the subband structure and?occupation in AlxGa1?xN/GaN heterostructures

The subband structure and occupation in the triangular quantum well at Al _x Ga_1−x N/GaN heterointerfaces have been investigated by means of temperature dependent Shubnikov–de Haas (SdH) measurements at low temperatures and high magnetic fields under illumination. After the illumination of the heterostructures, the total two-dimensional electron gas concentration increases, and the SdH oscillation amplitudes are enhanced when there is no additional subband occupation. It is also found that the energy separation between the subbands decreases after the illumination. We suggest that the illumination decreases the electric field and thus weakens the quantum confinement of the triangular quantum well at Al _x Ga_1−x N/GaN heterointerfaces. The GaN layer is thought to be the primary contributor of the excited electrons by the illumination.     

敏化光波长对(Fe,Ni):LiNbO3晶体全息记录性能的影响

分别采用514 nm绿光、488 nm蓝光和390 nm紫外光作为敏化光,633 nm红光作为记录光,详细研究了敏化光波长对氧化(Fe,Ni):LiNbO3晶体全息记录性能的影响.结果表明:随着敏化光波长的逐渐减小,氧化(Fe,Ni):LiNbO3晶体的非挥发全息记录性能逐渐优化,390 nm紫外光是这三种敏化光中最优的敏化光.考虑敏化光的吸收,为了在双中心全息记录中获得最优的性能,应当选择合适波长的敏化光:一方面短波长敏化光能有效地敏化深中心;另一方面短波长敏化光的吸收太强(如对光折变效应无用的基质吸收),不能沿厚度方向有效地敏化晶体,所以实际上需折衷考虑,并从理论上给予了解释.     

Luminescence detection of multiphoton ionization-fragmentation of the molecular CrO 4 2− anions adsorbed on the surface of dispersed SiO2

It is shown that luminescence detection of multiphoton ionization-fragmentation of the molecular CrO ₄ ²⁻ anions adsorbed on the surface of dispersed SiO₂ is possible under excitation with the fundamental frequency of a Nd:YAG pulsed laser (λ=1.064 μm). The structure and the process of formation of the adsorbed complexes under thermal activation of the surface and the nature of luminescence transitions in CrO ₄ ²⁻ anions are studied in detail. It is shown that luminescence is excited as a result of the recombination of photoelectrons and ionized chromate ions. Multiphoton ionization of the ions occurs under three-photon resonance conditions. The resonance level is an antibonding state of the adsorption complex formed with the participation of an oxygen vacancy on the SiO₂ surface. The dynamics of the multiphoton luminescence excitation process includes autoionization (stimulated by intercomplex electronic excitation) in superexcited states, fragmentation of chromate anions, and annealing of surface oxygen vacancies. The rate equations for three-photon-resonance multiphoton ionization are studied. The cross sections for two-and one-photon transitions on the nonresonance steps of multiphoton absorption are obtained. It is concluded that the nonlinear polarizability of the donor-acceptor adsorption bond in “chromate anion-oxygen vacancy” complexes is very important. Zh. éksp. Teor. Fiz. 111, 1748–1774 (May 1997)     

Fabrication of a nanoparticle TiO<Subscript>2</Subscript> photoelectrochemical cell utilizing a solid polymeric electrolyte of PAN–PC–LiClO<Subscript>4</Subscript>

A nanoparticle TiO₂ solid-state photoelectrochemical cell utilizing as a solid electrolyte of poly(acrylonitrile)–propylene–carbonate–lithium perchlorate (PAN–PC–LiClO₄) has been fabricated. The performance of the device has been tested in the dark and under illumination of 100-mW cm⁻² light. A nanoparticle TiO₂ film was deposited onto indium tin oxide-covered glass substrate by controlled hydrolysis technique assisted with spin-coating technique. The average grain size for the TiO₂ film is 76 nm. LiClO₄ salt was used as a redox couple. The room temperature conductivity of the electrolyte is 4.2 × 10⁻⁴ S cm⁻¹. A graphite electrode was prepared onto a glass slide by electron beam evaporation technique. The device shows the rectification property in the dark and shows the photovoltaic effect under illumination. The best J _sc and V _oc of the device were 2.82 μA cm⁻² and V _oc of 0.58 V, respectively, obtained at the conductivity of 4.2 × 10⁻⁴ S cm⁻¹ and intensity of 100 mW cm⁻². The J _sc was improved by about three times by introducing nanoparticle TiO₂ and by using a solid electrolyte of PAN–PC–LiClO₄ replacing PVC–PC–LiClO₄ in the device. The current transport mechanism of the cell is also presented in this paper.