Mn掺杂Zn-In-S量子点的制备及发光性质研究

制备了Mn掺杂Zn-In-S量子点并研究了Zn/In的量比和反应温度对其发光性质的影响。在Mn掺杂的Zn-In-S量子点的发光谱中观测到一个600 nm发光带。通过改变Zn/In的量比,掺杂量子点的吸收带隙可从3.76 e V(330 nm)调谐到2.82 e V(440 nm),但600 nm发光峰的波长只有略微移动。这些掺杂量子点的最长荧光寿命为2.14 ms。当反应温度从200℃增加到230℃时,掺杂量子点的发光强度增加并达到最大值;而继续升高温度至260℃时,发光强度迅速减弱。此外,测量了Mn掺杂Zn-In-S量子点的变温发光光谱。发现随着温度的升高,发光峰位发生蓝移,发光强度明显下降。分析认为,Mn掺杂Zn-In-S量子点的600 nm发光来自于Mn2+离子的4T1和6A1之间的辐射复合。     

金－多孔硅光致发光和红外光谱研究

报道了金－多孔硅的稳态光致发光，瞬态光致发光和傅里叶变换红外光谱的研究，讨论了金在多孔硅表面吸附产生的表面电子态对多孔硅光致发光特性的影响。     

Photoluminescence quenching of porous silicon by noble metal adsorbates

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Hole localization effect on determination of charge accumulation in double barrier resonant tunneling structures

We have investigated photoluminescence of double-barrier diodes under various bias voltages and observed the saturation of the broadening of the photoluminescence lines. We have also studied the integrated photoluminescence intensity with increasing applied voltages near resonant voltages for high quality samples at low temperature (4.2K). The results of the 77K photoluminescence experiments confirm those at 4.2K. The saturation of the broadening is due to weak hole localization; however, the saturation of the integrated photoluminescence intensity is mainly due to reduced nonradiative recombination. Our results suggest that the hole localization may arise from interface roughness.     

Au/Au2S复合纳米球壳微粒的发光特性

观测了金纳米球壳微粒（纳米级Au2S介质外包裹一层纳米级厚的金壳）的荧光光谱，与块状Au2S的荧光峰相比，金纳米球壳的荧光峰蓝移到蓝绿区域，蓝移的主要原因是核－壳纳米复合结构中的表面态和量子尺寸效应。     

Dynamics of localized excitons in a superlattice grown by molecular-beam epitaxy with submonolayers of CdSe

The low-temperature photoluminescence spectrum and the recombination dynamics of localized excitons have been studied in a short-period superlattice of CdSe/ZnSe submonolayers. As distinct from structures with isolated submonolayers, which exhibit one narrow photoluminescence peak, the photoluminescence and photoluminescence excitation spectra of a superlattice have two peaks, separated by ∼50 meV. The amount of splitting, as well as the temporal characteristics of the damping of the photoluminescence, are interpreted in terms of a model of a disordered superlattice of extended islands, sited randomly in the submonolayers making up the superlattice. Fiz. Tverd. Tela (St. Petersburg) 40, 837–838 (May 1998)     

Effect of photodarkening on photoluminescence dynamics in CdS-doped glass

We have studied the effect of photodarkening on photoluminescence dynamics in CdS nanocrystals in glass. We have found that the commonly observed increase in the decay rate during photodarkening is spectrally selective, being limited only to the photoluminescence spectral region generally related with carriers in nanocrystal interior states or in shallow traps. On the contrary, the photoluminescence decay rate is exponentially dependent on photon energy (exponential constant of 0.8 eV for the fresh sample) in the spectral interval covering the whole photoluminescence spectrum.     

光浴对CH_3NH_3PbI_3薄膜光致发光量子效率的影响

研究了CH_3NH_3PbI_3薄膜在光浴条件下的光致发光量子效率演化行为。在光浴过程中,CH_3NH_3PbI_3薄膜的光致发光量子效率表现为先增大再减小的变化趋势。发光动力学测量实验表明,在光浴过程中,CH_3NH_3PbI_3薄膜的载流子复合寿命与光致发光量子效率具有相同的变化趋势,即先增大再减小。根据实验结果可以推断,光浴引发CH_3NH_3PbI_3薄膜发生两种物理过程,分别使其光致发光量子效率升高和降低。两种过程共同决定了CH_3NH_3PbI_3薄膜在光浴条件下的光致发光量子效率演化行为。     

Instability of the photoluminescence of porous silicon

Results of studies of the photoluminescence of porous silicon with different prehistories have revealed the mechanism and nature of the instability of the luminescence properties of freshly prepared samples. It was established that the initial quenching and subsequent rise of the photoluminescence is attributable to the intermediate formation of silicon monoxide (photoluminescence degradation) and subsequent additional oxidation to form SiO₂ (photoluminescence rise). Ultraviolet laser irradiation accelerates this process by a factor of 200–250 compared with passive storage of the samples in air. Plasma-chemical treatment in an oxygen environment merely results in a subsequent rise in the photoluminescence as a result of the formation of monoxide on the porous silicon surface. A kinetic model is proposed for this process. Zh. Tekh. Fiz. 69, 135–137 (June 1999)     

Photoluminescence of porous silicon surfaces stabilized through Lewis acid mediated hydrosilylation

Lewis acid mediated hydrosilylation on porous silicon surfaces permits facile incorporation of a wide variety of functionalities through stable silicon–carbon bonds. The surfaces demonstrate high chemical stability with respect to hydrofluoric acid and aqueous base. The effects of the covalently bound surface groups on photoluminescence have been investigated and it was noted that alkyl and alkenyl termination induced only small decreases in photoluminescence efficiency. Aromatic substituents conjugated through a vinyl group, however, bring about almost complete quenching of the observed photoluminescence, regardless of substitution with either electron withdrawing (chloride) or donating (methyl) functionalities. The photoluminescence fatigue of dodecyl terminated surfaces in air for 12–16 h periods has been monitored and compared to unfunctionalized porous silicon. In air, the photoluminescence of dodecyl terminated surfaces degrades faster than the unfunctionalized porous silicon but under inert atmosphere (nitrogen), the rate of photoluminescence fatigue is slow in both cases and approximately equivalent.     

Two-photon-induced laser annealing for enhancement of photoluminescence intensity in ZnSe crystal

We present the finding that photoluminescence intensity in ZnSe crystal is enhanced after exposure to a femtosecond laser beam. After the crystal was illuminated with laser light of 1.04 MW/cm(2) during 300 s, photoluminescence intensity was increased approximately 20%. The region in which photoluminescence intensity was enhanced was localized in the optical axis, because this phenomenon occurred in the two-photon excitation process. It is possible to achieve three-dimensional control of photoluminescence intensity by illumination with laser light.     

Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated using the temperature-dependent photoluminescence from 12 K to 450 K.The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K.The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth.The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes.The incorporation of bismuth also induces alloy non-uniformity in the quantum well,leading to an increased photoluminescence linewidth.     

锥形碳氮结构的发光性能

利用偏压增强化学气相沉积系统,以CH4、H2和NH3为反应气体,分别在沉积有钛膜和碳膜的Si衬底上制备锥形碳结构,并用扫描电子显微镜、X射线能谱仪和显微Raman光谱仪对其进行表征,结果表明所制备的样品为锥形碳氮结构.用显微Raman光谱仪对锥形碳氮结构在室温下的发光性能进行了研究,发光谱显示出中心在621,643,7...     

Large prolongation of free-exciton photoluminescence decay in diamond by two-photon excitation

We report on time-resolved photoluminescence of a free-exciton in IIa chemical vapor deposition diamond crystal. Large difference between decay times for one- and two-photon excitation processes was observed. The longest room-temperature exciton photoluminescence lifetime τ(FE)=220 ns was obtained under two-photon excitation with a photon energy of 4.7 eV. The role of diffusion and surface recombination velocity in exciton photoluminescence dynamics was studied using a new optical method based on two-photon excited time-resolved photoluminescence. The measured room-temperature value of diffusion coefficient in diamond was D=40 cm(2)/s.     

Fabrication and temperature-dependent photoluminescence spectra of Zn–Cu–In–S quaternary nanocrystals

A series of Zn-Cu-In-S nanocrystals （ZCIS NCs） are prepared and the optical properties of the ZCIS NCs are tuned by adjusting the reaction time. It is interesting to observe that the temperature-dependent photoluminescence （PL） spectra of the ZCIS NCs show a redshift with decreasing intensity at low temperature （50-280 K） and a blueshift at high temperature （318--403 K）. The blueshift can be explained by the thermally active phonon-assisted tunneling from the excited states of the low-energy emission band to the excited states of the high-energy emission band.     

CuInS2纳米晶的制备和发光性质

以十二硫醇为溶剂,通过选择合适的金属源制备了各种尺寸的CuInS₂量子点。观察到随着粒子的尺寸减小,其吸收和发光光谱明显蓝移,存在明显的量子尺寸效应。通过在CuInS₂纳米晶表面包覆ZnS壳层,发现随着壳层厚度增加,其发光量子效率明显提高,最大达到了48%;继续增加壳层厚度,其发光量子效率反而降低。进一步测量它们的荧光寿命,发现包覆ZnS壳层后的CuInS₂纳米晶的荧光寿命明显增加,证实表面包覆明显减少其表面的无辐射复合中心,提高了其发光效率。进一步制备了CuInS₂/ZnS核壳量子点发光二极管,并对其电致发光性质进行了研究。     

Optical properties of neodymium incorporated in porous silicon

We report the optical properties of Nd-incorporated porous silicon. Photoluminescence and photoluminescence excitation measurements have been performed. Room temperature emission spectra from dried or annealed samples have been studied. While steady-state photoluminescence results indicate porous silicon light absorption by the Nd, the photoluminescence excitation shows a deficiency of energy transfer between porous silicon and Nd ions.     

The photoluminescence kinetics of oligothiophene-phenylenesilane crystalline films

Poly- and single crystalline films of 5,5??-bis(4-trimethylsilylbenzene-1-yl)-2,2??-bithiophene were grown for the first time and their photoluminescent properties were studied. Single crystalline films show exponential photoluminescence kinetics with a lifetime of 0.97 ns. Polycrystalline films demonstrate more complex photoluminescence kinetics. The relationship between the film structure and the photoluminescence kinetics is discussed.     

钛酸锶钡薄膜的室温光学性能研究

采用溶胶-凝胶法制备了(Ba0.75Sr0.25)TiO3薄膜,研究了不同退火温度下样品的物相结构、薄膜的光致发光性能和光学透过率。结果表明:室温下非晶钛酸锶钡薄膜在蓝光激发下具有明显的发光现象,发光波长范围是500～650 nm,峰值在525 nm附近。延长非晶态薄膜的退火时间能够显著提高样品的发光强度,且发光强度随薄膜厚度增加而增大。晶态薄膜有微弱的发光现象。透射谱测试结果表明,钛酸锶钡薄膜在可见光范围内具有良好的光学透过率。