Up-conversion luminescence tuning in Er~(3+) -doped ceramic glass by femtosecond laser pulse at different laser powers

The up-conversion luminescence tuning of rare-earth ions is an important research topic for understanding luminescence mechanisms and promoting related applications. In this paper, we experimentally study the up-conversion luminescence tuning of Er~(3+)-doped ceramic glass excited by the unshaped, V-shaped and cosine-shaped femtosecond laser field with different laser powers. The results show that green and red up-conversion luminescence can be effectively tuned by varying the power or spectral phase of the femtosecond laser field. We further analyze the up-conversion luminescence tuning mechanism by considering different excitation processes, including single-photon absorption(SPA), two-photon absorption(TPA), excited state absorption(ESA), and energy transfer up-conversion(ETU). The relative weight of TPA in the whole excitation process can increase with the increase of the laser power, thereby enhancing the intensity ratio between green and red luminescence(I_(547)/I_(656)). However, the second ETU(ETU2) process can generate red luminescence and reduce the green and red luminescence intensity ratio I_(547)/I_(656), while the third ESA(ESA3) process can produce green luminescence and enhance its control efficiency. Moreover, the up-conversion luminescence tuning mechanism is further validated by observing the up-conversion luminescence intensity, depending on the laser power and the down-conversion luminescence spectrum under the excitation of 400-nm femtosecond laser pulse. These studies can present a clear physical picture that enables us to understand the up-conversion luminescence tuning mechanism in rare-earth ions, and can also provide an opportunity to tune up-conversion luminescence to promote its related applications.     

Temperature dependence of the luminescence of TiO2 powder

The temperature dependence of the luminescence quantum yield of powdered titaniumdioxide in vacuum, nitrogen, and water vapor, respectively, was measured in the temperature range 300 K to 800 K. The observed luminescence is attributed to luminescence from surface states. We find that the luminescence is thermally quenched, as predicted by a simple model. Furthermore, the luminescence is shifted towards shorter wavelengths with increasing temperature. We also observed that the luminescence in vacuum is weakly quenched in the presence of nitrogen or water vapor.     

熔制温度对铋离子掺杂钡铝硅酸盐玻璃发光性能的影响

研究了熔制温度对铋离子掺杂钡铝硅酸盐玻璃发光性能的影响.当用紫外光和808nm的激光二极管激发时,分别在425nm和1330nm附近观察到可见和宽带红外发光.可见荧光的发射强度随着熔制温度的升高逐渐下降,而红外发光强度随着熔制温度的升高先是增强然后减弱.对光致发光的机理进行了探讨.     

Luminescence intensity of vortex cavitation in a Venturi tube changing with cavitation number

Hydrodynamic cavitation in a Venturi tube produces luminescence, and the luminescence intensity reaches a maximum at a certain cavitation number, which is defined by upstream pressure, downstream pressure, and vapor pressure. The luminescence intensity of hydrodynamic cavitation can be enhanced by optimizing the downstream pressure at a constant upstream pressure condition. However, the reason why the luminescence intensity increases and then decreases with an increase in the downstream pressure remains unclear. In the present study, to clarify the mechanism of the change in the luminescence intensity with cavitation number, the luminescence produced by the hydrodynamic cavitation in a Venturi tube was measured, and the hydrodynamic cavitation was precisely observed using high-speed photography. The sound velocity in the cavitating flow field, which affects the aggressive intensity of the cavitation, was evaluated. The collapse of vortex cavitation was found to be closely related to the luminescence intensity of the hydrodynamic cavitation. A method to estimate the luminescence intensity of the hydrodynamic cavitation considering the sound velocity was developed, and it was demonstrated that the estimated luminescence intensity agrees well with the measured luminescence intensity.     

Upconversion luminescent characteristics and peak shift of CdSeS nanocrystals under different wavelength laser excitation

Upconversion luminescence was obtained from CdSeS nanocrystals (NCs) under 800 nm femtosecond laser excitation. The structural and optical characteristics of the CdSeS NCs were investigated experimentally by use of UV–visible absorption spectroscopy, transmission electron microscopy, X-ray diffractometry, and time-resolved luminescence dynamics. Peak shift of luminescence in CdSeS NCs can be readily observed under different wavelength femtosecond excitation. The pump power dependence of the luminescence intensity and time-resolved decay revealed that one, two, and three-photon absorption occur. It was found that upconversion luminescence is composed of photoinduced trapping and a band-edge excitonic state, and two types of species are involved in the biexponential luminescence decay kinetics. With increasing Se-doped composition, luminescence lifetimes of CdSeS NCs with similar sizes become shorter. This is not consistent with the changes of undoped CdS NCs and is ascribed to impurity level increased doping in the energy gap, which is favorable for trapping luminescence. A simple energy level of doping NCs is used to interpret upconversion luminescence and the peak shift of steady-state emission.     

Luminescence of silver chloride microcrystals upon photoexcitation by different methods

The luminescence spectra of AgCl microcrystals were measured in two different regimes: in the regime of excitation of stationary luminescence and in the regime of photostimulated burst of luminescence. Differences between the spectra of stationary luminescence and the spectra of photostimulated-luminescence burst in the range between 430 and 590 nm have been found. The luminescence spectra are complex; the ratio of intensities for elementary components changes with the technique of excitation. Differences in the form and composition of complex luminescence bands obtained under different conditions of registration are attributed to the recombination interaction of the luminescence centers. It is shown that analysis of the dependences of intensity ratios for the elementary components of a complex luminescence band on the exciting-radiation intensity allows one to evaluate the mechanism of recombination in elementary bands provided that the mechanism is known for at least one luminescence band.__________Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 1, pp. 85–89. January–February, 2005.     

Size-induced effect on cathode luminescence spectra of CsI(Na) and CsI(Tl) crystals

We investigated the cathode luminescence characteristics of CsI(Na)and CsI(Tl)crystals by the spectrum and structure properties at room temperature.We fabricated three different sizes of CsI(Na)and CsI(Tl)crystals and measured their luminescence spectra under cathode rays.We found that CsI(Na)cathode luminescence peaks appear at 420 and 305 nm,and CsI(Tl)cathode luminescence peaks are 540 and 410 nm,the grain size affects CsI(Na)luminescence significantly,and the Na-related420 nm luminescence intensified relatively when the average grain size reaches~20μm,which becomes weak when the grain size is down to nano-scale.But the cathode luminescence spectra of CsI(Tl)crystals with different size have no obvious changes.Our explanations for these phenomena are that the different impurities in the same host material CsI lead to different luminescence mechanisms.These cathode luminescence characteristics indicate the suitability of CsI(Na)and CsI(Tl)crystals to match photomultiplier tube for large area crystal detector development.     

Yb:YAG晶体的合作发光现象

研究了Yb：YAG晶体的合作发光现象。当用940nm的近红外光激发时,Yb:YAG晶体有明显的上转换蓝色发光。实验发现498 nm的蓝色发光强度与激发功率的平方成正比,而且Yb3+掺杂浓度越高,蓝色发光越强。分析表明这是Yb3+间强的相互作用导致的合作发光,是由于Yb3+在共价性的YAG基质中,它的4f13电子易于与近邻离子发生相互作用导致的。     

Influence of annealing on the scintillation properties of zinc oxide powders and ceramics

It was shown that annealing ZnO and ZnO:Ga initial powders and ceramics in different atmospheres significantly changes the characteristics of the studied samples. Two main luminescence bands of different origins were observed in powders at 540 nm and 580 nm. Annealing either in vacuum or in Ar:H₂ atmosphere increased intensity of green luminescence with peak at 540 nm whereas annealing in air enhanced a luminescence band with peak at 580 nm in the powders. Corresponding changes in luminescence kinetic properties were observed. Annealing of the ceramics in vacuum and air did not affect the luminescence properties, while annealing them in Ar:H₂ atmosphere increased green luminescence intensity of undoped ceramics and excitonic luminescence intensity of doped ones. Comparison of the X-ray, gamma-ray and cathode-ray excited luminescence lead to conclusion that the enhancement of luminescence intensity took place in surface layer of about 100 μm thickness.     

Luminescence techniques: instrumentation and methods

This paper describes techniques, instruments and methods used in luminescence dating and environmental dosimetry in many laboratories around the world. These techniques are based on two phenomena – thermally stimulated luminescence and optically stimulated luminescence. The most commonly used luminescence stimulation and detection techniques are reviewed and information is given on recent developments in instrument design and on the state of the art in luminescence measurements and analysis.     

Analysis of the latent structure of luminescence and absorption spectra of thallium complexes

Comprehensive investigations of luminescence, excitation, and absorption spectra as well as of the luminescence kinetics of a frozen LiCl-Tl⁺ solution are carried out. It is established that the luminescence spectrum consists of four components. One component is caused by luminescence of the matrix and the remainder by luminescence of one luminescence center, namely, by the saturated complex of thallium TlCl₂(H₂O)Cl₄. The absorption spectrum consists of three components. Their parameters have been evaluated. Each component of the luminescence spectrum is excited in several components of the absorption spectrum. It is found that the luminescence spectrum components and their intrinsic absorption bands are located differently on the frequency axis. These data are similar to those obtained for other activated solutions of electrolytes. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 1, pp. 75–78, January–February, 2000.     

硅中稀土掺杂层的光致发光研究及其关键问题

利用离子注入技术,对稀土掺杂到半导体单晶硅中的光致发光行为进行了研究。室温下得到了La,Ce和Nd稀土掺杂层的蓝紫色光致发光光谱,并首次观测到硅中稀土掺杂层室温下的光致上转换发光现象。光致发光强度随着稀土掺杂量的增加和热处理温度的上升急剧增强。在紫外光激发下,发光强度随着激发光波长的减小而增大;在光致上转换过程中,发光强度随着激发波长的增加而上升。这表明光致发光强度与稀土元素的掺杂量、掺杂层的结构与热处理温度有密切的关系。文章对在室温下这些稀土掺杂层的光致发光行为进行了分析,并提出了硅中稀土掺杂层光致发光行为研究今后需要重点解决的几个主要问题。     

Luminescence of AgHal phosphors containing a silver sulfide impurity

In a study of the luminescence spectra of AgHal single crystals containing various levels of a silver sulfide impurity, the mechanism for the luminescence is established. The thermal quenching of the steady-state luminescence and of the light sum of the luminescence of AgHal (Ag₂S) phosphors is due to ionic processes, as in pure silver halides. The activation energy for the thermal quenching of the light sum is found. The ratio of the cross sections for electron recombination with holes localized at the luminescence centers responsible for the various luminescence bands is found in a kinetic study of the decay of the optical emission stimulated in these bands.     

Comparison of luminescence lifetimes in quartz following alpha and beta irradiation

The change in optically stimulated luminescence sensitivity of quartz associated with annealing is accompanied by a change in luminescence lifetime, whereas, in contrast, the change in sensitivity associated with irradiation by alpha particles rather than by beta particles is not accompanied by any change in luminescence lifetime. This is compatible with the usual ‘saturation’ explanation for the significantly lower luminescence sensitivity of quartz to alpha irradiation compared to the luminescence sensitivity to beta irradiation.     

Luminescence imaging of biological subjects during X-ray irradiations lower energy than Cerenkov-light threshold

It is commonly thought that UV or visible-light luminescence imaging of biological subjects during X-ray irradiation at the energy below 120 keV is impossible because the secondary electrons produced in this energy range do not emit Cerenkov light. Contrary to this consensus, we found UV or visible-light luminescence imaging of the subjects were possible with X-ray irradiations of this energy range. We placed one of the biological subjects in a black box; visible-light luminescence images were measured with a high-sensitivity, cooled charge coupled device (CCD) camera during X-ray irradiation at energy below 120 keV. We also conducted the imaging of air without subjects during irradiation of the same X-ray. The biological subjects emitted visible-light luminescence, and the imaging was possible with the irradiation of the X-ray below 120 keV. The luminescence images were observed in only the X-ray irradiated areas. Also air luminescence images could be obtained and the intensity of the luminescence measured from the images was proportionally increased with the exposure dose. UV or visible-light luminescence imaging of biological subjects was possible during X-ray irradiations lower energy than the Cerenkov-light threshold. The phenomenon was different from general X-ray fluorescence because wavelength of the luminescence is UV or visible-light. The luminescence imaging method is promising for estimating the irradiated area with X-ray, which could be used for interventional radiology (IVR). Also air luminescence imaging would be applied to the exposure dose distribution measurements for X-ray of diagnostic X-ray systems.     

Decay of electronic excitations in colloidal thioglycolic acid (TGA)-capped CdS/ZnS quantum dots

Investigations of dynamics of exciton relaxation in colloidal thioglycolic acid (TGA)-capped CdS/ZnS core/shell systems with diameter of 3.6 nm by means of femtosecond transient absorption spectroscopy, thermostimulated luminescence (TSL), and decay of luminescence are presented in this paper. It was found that the intensity of trap-state luminescence increases when one and two ZnS monolayers are formed. Also, the lifetime of trap-state luminescence increases. Two types of trap states with different depths were found, using thermostimulated luminescence technique. Localized states of the first type with depth of 0.085 eV do not change their concentration during sell formation. In contrast, trap state of the second type with depth of 0.125 eV are almost completely removed. It was found that the electron lifetime, investigated femtosecond transient absorption is not changed during formation of ZnS shell. It was concluded that localized states are channels of non-radiative recombination, direct quenching the center of trap-state luminescence. The absence of exciton luminescence is caused by rapid localization of holes at luminescence center.     

Facets of Luminescence for Dating

The aim of this article is to introduce luminescence dating and relate it to luminescence and Raman spectroscopy of minerals. The physical bases of luminescence signals used in dating and their relationships to other radiation-induced luminescence and Raman signals are briefly reviewed. The manner in which these signals are applied to evaluate luminescence ages is described. Archaeological and geological case studies from the author's experience are used to illustrate potentialities and issues related to different contexts, techniques, and materials.     

GaN薄膜的蓝光和红光发射机理研究

由于生长工艺的不完善，非掺杂GaN薄膜中通常存在未知的杂质和缺陷，产生与这些未知杂质和缺陷能级相关的发光。报道了非掺杂GaN薄膜的692nm红色发光．并研究了非掺杂GaN薄膜的蓝、红色发光的发射机理；利用作者提出的吸收归一化光致发光激发光谱，直接测量出了非掺杂GaN薄膜的蓝、红色发光的初始态能级，确定蓝色发光为施主-价带跃迁复合，而红色发光为施主-受主跃迁复合；给出了黄、蓝、红光的发射模型。所取得的结果对于确定未知杂质和缺陷的种类具有重要的参考价值。     

Quantum efficiency and fatiguing behavior of various luminescence processes in a−As2S3

Measurements of the luminescence excitation spectra of amorphous As₂S₃ show that the quantum effieiencies of the subbandgap luminescence processes decrease whereas that of the band-to-band luminescence increases with increasing excitation photon energy. Furthermore, the band-to-band luminescence shows no fatigue, in contrast to the subbandgap processes. These results allow us to conclude that the usual defects play no role in the band-to-band luminescence process and that surface recombination is not important in the energy range investigated.     

稀土掺杂材料的上转换发光

稀土掺杂材料的上转换发光是实现光波频率转换的重要途径,也是稀土掺杂发光材料研究的重要内容。本文从介绍与上转换相关的基本概念出发,阐述了稀土离子上转换发光的发展历史;对稀土离子掺杂材料的能量传递、激发态吸收、合作敏化、合作发光、双光子吸收激发及光子吸收雪崩等上转换发光机制进行了概述,并对各机制进行了比较;对不同稀土离子掺杂体系中上转换发光的机制进行了总结;对以往研究的稀土掺杂上转换发光材料的基质,包括粉体材料、晶体材料、非晶材料进行了概括;最后对影响稀土离子上转换发光效率的因素进行了分析,提出了在上转换发光材料的设计中应重点考虑基质对泵浦光及上转换发射光的吸收、基质材料的声子能量、稀土离子的掺杂方案及泵浦途径等因素。