He-LiH体系束缚态能级的理论计算

在CCSD(T) 势能面的基础上,采用严格的量子力学方法计算得到了He-LiH体系束缚态振转能级和波函数,结果表明该体系存在10个振转束缚态.从波函数的分布图中可以知道,与J=0的第一个能级对应的本征态是靠近Li端较深势阱的一个束缚态;第二个能级为伸展激发振动能级;基本上存在于深势阱内,但H端的浅势阱通过隧道效应,对该能级的几率分布产生了影响.     

一维双势阱问题的理论研究

利用数值计算的方法求解了一维理想双势阱模型的基态及低激发态能级和相应的波函数,将双势阱之间的间距、双势阱的相对深度和双势阱的宽窄与实际的物理问题建立了联系,并分析了它们对一维双势阱的能级和相应波函数的影响,定性地模拟了双原子分子和原子中的双势阱问题.     

T1u×hg Jahn-Teller系统：D3d势阱中的频率分解与能级分裂

在C60分子中，未被填充的最低电子态具有T1u对称性，因此，对中性的C60而言，不论是通过分子内部激发，或是外部掺杂，都易被一个电子占据而形成Jahn-Teller（JT）活跃电子态.此态与五重简并的hg声子态耦合，构成所谓的T1u-hg -JT系统.在这一JT系统中，当只考虑电声的线性耦合时，其绝热势能面是一个槽形.但在实际的系统中，二阶电声耦合是存在的，理论研究表明，原来的势槽将被这二阶非线性耦合弯曲成D3d或D5d对称性的势阱.声子振动态在阱中将显示各向异性效应，使得声子沿不同的方向有不同的振动频率，进而影响势阱中的能级分布、势阱间的重叠积分，以及整个系统的隧道能级分裂等.对D3d势阱中各向异性效应进行了研究，利用幺正平移、?pik Pryce和标度变换等方法计算了系统势阱中的能级，以及阱中的振动频率，研究了势阱中的能级间隔以及微绕修正能量的变化，并由此导出了这些物理量在仅有线性耦合的势槽中变化的情形. 关键词： C60 Jahn-Teller效应 各向异性 电声耦合     

无限深势阱下杂质量子点的能级计算

在有效质量近似下,垂直方向采用无限深势阱限制势,在x-y平面上,量子点内采用抛物势近似,在量子点边界处采用与实际情况更接近的无限深势阱.在中心杂质电荷为ηe时,利用波函数近似,得到基态和低激发态的能级,与x-y平面均采用抛物势时得到的能级进行了比较.计算发现在量子点真实半径比较小时,电子的基态和低激发态受其影响很大,而相应的能级随量子点的半径逐步增大.在量子点半径大于5倍有效玻尔半径时,能级受其影响已经变得很弱.并且,随着磁场的变化,量子点半径对基态和第一激发态的能级差的影响也很大.最后我们计算了杂质电子的基态束缚能并讨论了声子对其影响.     

T1u(×)hg Jahn-Teller系统:D 3d势阱中的频率分解与能级分裂

在C60分子中,未被填充的最低电子态具有Tlu对称性,因此,对中性的C60而言,不论是通过分子内部激发,或是外部掺杂,都易被一个电子占据而形成Jahn-Teller(JT)活跃电子态.此态与五重简并的hg声子态耦合,构成所谓的Ylu hg JT系统.在这一JT系统中,当只考虑电声的线性耦合时,其绝热势能面是一个槽形.但在实际的系统中,二阶电声耦合是存在的,理论研究表明,原来的势槽将被这二阶非线性耦合弯曲成D3d或D5d对称性的势阱.声子振动态在阱中将显示各向异性效应,使得声子沿不同的方向有不同的振动频率,进而影响势阱中的能级分布、势阱间的重叠积分,以及整个系统的隧道能级分裂等.对D3d势阱中各向异性效应进行了研究,利用幺正平移、OpikPryce和标度变换等方法计算了系统势阱中的能级,以及阱中的振动频率,研究了势阱中的能级间隔以及微绕修正能量的变化,并由此导出了这些物理量在仅有线性耦合的势槽中变化的情形.     

T_(1u)h_gJahn-Teller系统:D_(3d)势阱中的频率分解与能级分裂

在C6 0 分子中 ,未被填充的最低电子态具有T1u对称性 ,因此 ,对中性的C6 0 而言 ,不论是通过分子内部激发 ,或是外部掺杂 ,都易被一个电子占据而形成Jahn Teller(JT)活跃电子态 .此态与五重简并的hg 声子态耦合 ,构成所谓的T1u hgJT系统 .在这一JT系统中 ,当只考虑电声的线性耦合时 ,其绝热势能面是一个槽形 .但在实际的系统中 ,二阶电声耦合是存在的 ,理论研究表明 ,原来的势槽将被这二阶非线性耦合弯曲成D3d或D5d 对称性的势阱 .声子振动态在阱中将显示各向异性效应 ,使得声子沿不同的方向有不同的振动频率 ,进而影响势阱中的能级分布、势阱间的重叠积分 ,以及整个系统的隧道能级分裂等 .对D3d势阱中各向异性效应进行了研究 ,利用幺正平移、 pik Pryce和标度变换等方法计算了系统势阱中的能级 ,以及阱中的振动频率 ,研究了势阱中的能级间隔以及微绕修正能量的变化 ,并由此导出了这些物理量在仅有线性耦合的势槽中变化的情形 .     

双势垒InAs/InP纳米线异质结热电子制冷机

研究了具有不同温度和不同化学势的两个热库中电子通过一个双势垒InAs/InP纳米线异质结进行的传输.利用传输矩阵法得到了电子的传输概率,进而计算得到电子传输所产生的热流.通过数值计算给出了热电子制冷机的性能特征曲线.进一步分析了势垒宽度和势阱宽度对制冷机工作性能的影响.研究发现,当势阱宽度一定时,随着势垒宽度变大共振中心能级的位置变大,共振能级宽度变小,同一偏压对应的制冷率变小,相对制冷系数变大.当势垒宽度一定时,随着势阱宽度变大,同一偏压对应的相对制冷系数变小.当势垒和势阱宽度同时变化时,得到的曲线与势垒宽度一定势阱宽度变化时得到的曲线基本相似.这表明制冷率和相对制冷系数主要受势阱宽度变化的影响.     

双势垒抛物势阱磁性隧道结隧穿磁阻及自旋输运性质的研究

采用相干量子输运理论和传递矩阵的方法,在抛物势阱磁性隧道结(F/PW/F)的铁磁和半导体势阱间插入另一种半导体作为势垒,构造具有双势垒的抛物势阱磁性隧道结作为研究对象,研究了抛物势阱宽度、自旋轨道耦合效应、角度效应及插入势垒厚度对隧穿磁阻及自旋输运性质的影响计算结果表明,通过适当调节Rashba自旋轨道藕合强度和插入势垒的厚度,可以实现隧穿磁阻(TMR)的调制,能获得较大的TMR值,这些特点有助于促进新型磁性隧道结的开发和应用.     

势阱中二维理想玻色气体的磁性质

采用半经典近似方法,研究简谐势阱中二维理想带电玻色气体的磁性质.推导出了该体系的热力学势、相变温度、内能、比热、磁场强度和磁化率随外加磁场的变化关系,进而分析了约束势阱对理想带电玻色气体热力学性质的影响.     

一维δ势阱中的相对论粒子

求解一维相对粒子的Dirac方程。对一维δ势阱，计算了束缚态能级与波函数；对一维双δ势阱，给出了束缚态能级所满足的超越方程，并确定了束缚态的数目，简单讨论了散射问题。     

Dependence of space charge field and gain coefficient on the applied electric field in photorefractive materials

Intensity dependent space charge field and gain coefficient in the photorefractive medium due to the two interfering beams have been calculated by solving the material rate equations in presence of externally applied dc electric field. The gain coefficient has been studied with respect to variations in the input intensity, modulation depth, concentration ratio and normalized diffusion field in the absence and presence of the externally applied dc electric field. Space charge field has also been computed by varying the intensity ratio in the presence and absence of the externally applied dc electric field. It has been found that the rate of change of the space charge field with the normalized dc field decreases with the increasing intensity ratio for different values of the normalized diffusion field. It has also been found that the externally applied dc electric field has appreciable effect only when it is larger than the diffusion field.     

Resonant crossover of terahertz loss to the gain of a Bloch oscillating InAs/AlSb superlattice

Terahertz absorption in waveguides loaded with InAs/AlSb super-superlattice mesas reveals a frequency dependent crossover from loss to gain that is related to the Stark ladder produced by an applied dc electric field. Electric field domains appear to be suppressed in the super-superlattice composed of many very short segments of superlattice, interrupted by heavily doped InAs regions. Resonant crossover is indicated by an increase in terahertz transmission as the Stark splitting or Bloch frequency determined by the applied dc electric field exceeds the measurement frequency.     

Investigations on ionic processes and dynamics in the sheath region of helium and hydrogen discharges by laser spectroscopic electric field measurements

Temporally and spatially resolved measurements of the electric field distribution in the sheath region of RF and dc discharges provide a detailed insight into the sheath and ion dynamics. The electric field is directly related to the sheath ion and electron densities, the sheath voltage, and the displacement current density. Under certain assumptions also the electron and ion conduction current densities at the electrode, the ion current density into the sheath from the plasma bulk, the ion energy distribution function, and the power dissipated in the discharge can be inferred. Furthermore, the electric field distribution can give an indication of the collision-induced conversion between different ion species in the sheath. Laser spectroscopic techniques allow the noninvasive in situ measurement of the electric field with high spatial and temporal resolution. These techniques are based on the spectroscopic measurement of the Stark splitting of Rydberg states of helium and hydrogen atoms. Two alternative techniques are applied to RF discharges at 13.56 MHz in helium and hydrogen and a pulsed dc discharge in hydrogen. The measured electric field profiles are analyzed, and the results discussed with respect to the ion densities, currents, energies, temporal dynamics and species composition. Received: 26 July 2000 / Accepted: 12 December 2000 / Published online: 3 April 2001     

电场调控下不对称耦合量子点中激子的发光特性

使用有效质量模型,从理论上对GaAs/A10.35Ga0.65As不对称耦合量子点在不同耦合强度下束缚态和反束缚态的能级分裂情况进行了详细分析,重点探讨了电子和空穴的耦合隧穿对量子点体系能级特征及激子发光强度的影响.研究发现:不对称耦合量子点在外电场作用下价带束缚态和反束缚态能级出现反交现象,反交处的能级分裂值和临界电...     

On the electron energy distribution in the gas discharge positive column: Langmuir paradox

The results of calculations of electron drift characteristics in a dc spatially inhomogeneous periodic electric field are presented. It is shown that the effect of field inhomogeneities on the drift velocity and the average electron energy is insignificant under typical conditions of experiments with gas-discharge plasma at low gas pressures. However, the intensity of the processes of excitation, ionization, and plasma spatial distribution are strongly affected by the inhomogeneity (variance) and field variation behavior. It is shown that the electric field inhomogeneity in the gas discharge positive column leads to maxwellization of the electron energy distribution function.     

THEORETICAL INVESTIGATION OF ELECTRON-NEUTRAL ATOM COLLISION PROCESS AND ELECTRON TRANSPORT PARAMETERS IN DC GLOW DISCHARGE OF PLASMA WITH A TRANSVERSE MAGNETIC FIELD

A Monte Carlo simulation (MCS) technique is used to simulate the cathode sheath region of a helium dc glow discharge. In such a simulation, a nonuniform electric field and a transverse uniform magnetic field are considered. When the magnetic field intensity increases from 0 to 800 G, all types of collision considered in this paper are enhanced. This result is in agreement with the experimental result. The results also show that with the increase of magnetic field intensity, the electron transport time, the electron density increase, and the electron mean energy decreases.     

Radioelectric effect in a superlattice under the action of an elliptically polarized electromagnetic wave

The density of the current associated with the drag of charge carriers in a superlattice by an elliptically polarized electromagnetic wave is calculated. Two cases of the mutual orientation of the Umov-Poynting vector and the superlattice axis, i.e., their parallel and perpendicular orientations, are analyzed. It is shown that, for the parallel orientation, the radioelectric effect can change sign. The influence of the longitudinal dc electric field on the radioelectric effect is investigated under the conditions where a circularly polarized electromagnetic wave propagates along the superlattice axis. The current density is studied as a function of the electric field strength and the electromagnetic wave intensity. It is demonstrated that the direction of the electric current is changed at specific values of the dc field strength and the wave intensity.     

The second harmonic generation in semiconductors in the DC magnetic field

The second harmonic radiation in millimeter wave region is found in semiconductors in the absence of the dc electric field. The observed resonant maximum of radiation intensity is shown to be related to the excitation of the free-electron plasma oscillations in the dc magnetic field.     

Theory of resonant forbidden Raman scattering in semiconductors

The Raman tensors for the electric field-induced and wavevector dependent scattering from LO phonons in semiconductors have been calculated near critical points using a perturbation treatment. The resulting expressions have analytic closed forms such that the dependence of the forbidden scattering intensity on the incident photon energy and the applied d.c. electric field can be evaluated from available energy band parameters. The forbidden LO scattering intensity of GaAs in the back scattering configuration has been numerically calculated near the e₁ and E₁ gaps as functions of the incident photon energy and the dc electric field. The result shows strong interference between the two scattering processes. The allowed TO and LO Raman scattering intensities of GaAs were also calculated at a wavelength of 1.06 μm from the SHG and Faust-Henry coefficients, and compared with the forbidden LO intensity.     

外电场对SBN：Cr晶体二波耦合特性的影响及应用

对固液同成分SBN：Cr(Sr0.61Ba0.39Nb2O.6：Cr)晶体在外加直流电场作用下的光折变二波耦合特性及其应用进行了实验研究，分析了晶体的二波耦合强度增益 系数随外电场变化的趋势，并给出了实验测量结果.发现在适当的外电场作用下，晶体的光折变二波耦合增益和响 应速度可以得到一定程度的提高.进一步的研究表明，这种电场响应特性有助于改善SBN：Cr晶体的某些应用性能.利用该晶体通过光折变二波耦合非线性放大原理实现光学图像边沿增强时，通过给晶体沿轴向施加适当的外电场，可进一步提高图像边沿增强效果；在基于光 折变边沿增强预处理的联合变换相关器中，适当的外加电场可进一步改善联合变换相关器的相关识别性能. 关键词： SBN：Cr晶体 光折变二波耦合 边沿增强 联合变换相关器