H+和Ar11+激发Si的K壳层X射线发射研究

测量了50–250 keV H⁺和1.0–3.0 MeV Ar¹¹⁺ 轰击Si表面过程中辐射的X射线. 结果表明, 在Ar¹¹⁺入射的情况下, 引起了Si的L壳层上3, 4个电子的多电离.计算了Si的K壳层X射线产生截面, 并将两体碰撞近似(BEA), 平面波恩近似, ECPSSR理论计算与实验值进行了对比. ECPSSR理论与质子产生的截面数据能够很好地符合; 而考虑多电离后, BEA理论与Ar¹¹⁺的实验结果符合较好. 关键词： X射线 高电荷态重离子 多电离     

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The molecular dynamics simulation of interaction between CH⁺ with various energy and fusion material tungsten is conducted. The simulated results show that in the incident process, the sputtering rates of C and H atoms change suddenly at the different exposure doses when the incident energy is 50, 100 and 150eV respectively, a few of W atoms are sputtered in the interaction process, but the sputtering rate is less than 0.24%. When the exposure dose is about 3.92×10¹⁶cm⁻², the incident energy is 50eV, a hydrocarbon firm without W atom is formed on the sample surface bombarded by the ions. A mixed film of W, C and H is formed at the other energy. The deposited rates of C and H atom first decrease then increase with the incident energy increament, the minimum deposited rats appear at 250 and 200eV respectively. The density profiles of C, H atoms, C−H, C−C, W−C bonds in the sample after bombardment move towards the inside of sample, and the C sp³ dominated the sample.     

Xe~(53+)离子与Xe原子碰撞过程中的辐射电子俘获和辐射退激发光谱的理论研究

基于多组态Dirac-Fock方法和密度矩阵理论,系统地研究了在197 Me V/u的碰撞能量下,Xe~(53+)离子与Xe原子的辐射电子俘获过程(REC)以及电子被俘获到激发态后辐射退激发产生的特征谱线.计算了炮弹Xe~(53+)离子俘获电子到不同壳层np_(1/2,3/2)(n=2—5)的总截面与相应的REC光子能量和角分布,以及由激发组态1snp_(1/2,3/2)(n=2—5)J_f=1向基态1s~2Jd=0辐射退激发的跃迁能量、跃迁概率和特征光子的角分布和线性极化度.计算结果表明,辐射光子具有显著的角各向异性特征.此外,1snp_(3/2)J_f=1→1s~2J_d=0退激发特征光子也显示出很强的线性极化和角各向异性特征,而1snp_(1/2)J_f=1→1s~2J_d=0退激发特征光子的线性极化度趋于零并且角分布也趋于各向同性.     

重离子冷却储存环CSRm双电子复合实验研究类锂36,40Ar15+离子同位素移动

配备电子冷却装置的重离子储存环为开展高电荷态离子的双电子复合（dielectronic recombination,DR）精密谱学研究提供了绝佳的实验平台。本工作在兰州重离子加速器冷却储存环主环（HIRFL-CSRm）上开展了类锂36,40Ar15+离子的双电子复合实验,实验观测了电子-离子质心系能量范围为0~35 eV的双电子复合速率系数谱。通过外推法获得了36,40Ar15+离子2s_1/2→2p_1/2和2s_1/2→2p_3/2的跃迁能量。同时利用GRASP2K程序理论计算了36,40Ar15+离子2s_1/2→2p_1/2和2s_1/2→2p_3/2跃迁的质量移动因子和场移动因子,进而得到双电子复合谱的同位素移动值。36,40Ar15+离子2s_1/2→2p_1/2和2s_1/2→2p_3/2同位素移动分别为0.861 meV和0.868 meV。它们均小于目前CSRm上双电子复合实验的实验分辨为~10 meV,进而解释了实验测量的DR谱上未能观察到同位素移动的原因。然而,高电荷态离子的同位素移动场效应与原子序数Z5成正比,因此,在重离子加速器冷却储存环实验环（HIRFL-CSRe）以及未来大型加速器--强流重离子加速器装置（HIAF）上有望通过DR精密谱学方法研究高电荷态重离子甚至放射性离子的同位素移动,进而获得相关原子核的核电荷半径等信息。The cooler storage ring is equipped with an electron-cooler. It is an excellent experimental platform for dielectronic recombination (DR) experiment of highly-charged ions. In this paper, the dielectronic recombination experiments of lithium-like Ar15+ ions with mass number 36 and 40 are conducted at the HIRFL-CSRm(main ring of the Cooling Storage Ring of Heavy Ion Research Facility in Lanzhou). The experimental electron-ion collision energy scale is from 0 eV to 35 eV. Extrapolation method is exploited to obtain the excitation energies of transitions 2s_1/2→2p_1/2 and 2s_1/2→2p_3/2 of the 36,40Ar15+ ions from experimental data. Meanwhile, GRASP2K program is utilized to calculate the mass shift factors and field shift factors of 36,40Ar15+ ions for 2s_1/2→2p_1/2 and 2s_1/2→2p_3/2 transitions to obtain isotope shifts in DR spectra. In theoretical calculation, isotope shifts of 36,40Ar15+ ions corresponding to 2s_1/2→2p_1/2 and 2s_1/2→2p_3/2 are 0.861 meV and 0.868 meV, respectively. They are both less than the experimental precision (~10 meV) of these dielectronic recombination experiments at the CSRm, which explains that isotope shifts cannot be distinguished from the experimental dielectronic recombination spectra. However, the field shift of highly-charged ions is proportional to Z5. In the future, the dielectronic recombination experiments of highly-charged heavy ions even radioactive ions will be conducted at the HIRFL-CSRe (experimental ring of the Cooling Storage Ring of Heavy Ion Research Facility in Lanzhou) and the future large accelerator facility--HIAF(High intensity Heavy-ion Accelerator Facility) to measure isotope shifts to obtain the nuclear charge radius information.     

低速~(84)Kr~(15+,17+)离子轰击GaAs单晶

用345 keV的Kr15+和340 keV的Kr17+离子以45fi角入射n型GaAs单晶(100)面,测量了表面形貌的变化和发射的375—500 nm Ga I和Kr II的特征光谱线.Krq+(q=15,17)离子轰击后表面形貌的变化主要取决于入射离子的电荷态q.离子沉积到靶表面的能量引起Ga原子激发,其辐射光谱为Ga I 403.2 nm和Ga I 417.0 nm.入射离子中性化过程中俘获GaAs导带电子形成高激发态原子,通过级联退激填充3p,4d等空穴,P壳层电子跃迁发射谱线为Kr II 410.0 nm,Kr II 430.4 nm,Kr II 434.0 nm和Kr II 486.0 nm,Kr II486.0 nm为较强谱线.实验结果表明,入射离子与GaAs单晶相互作用发射的可见光产额与入射离子的电荷态密切相关,较高电荷态Kr17+离子入射产生的光辐射产额大约为Kr15+离子的两倍.     

反应物分子初始振动激发对H+CH~+→C~++H_2反应的影响

在CH_2~+体系的电子基态势能面上运用准经典轨线方法,研究了当碰撞能E=500 me V时,反应物分子的振动激发对H(~2S)+CH~+(X~1Σ~+)→C+(~2P)+H_2(X1_gΣ~+)反应的反应概率、反应截面和立体动力学性质的影响.分别计算了两矢量相关k-j′的P(θ_r)分布,三矢量相关k-k′-j′的P(φr)分布以及反应产物的四个极化微分截面.结果表明,产物分子转动角动量不仅在Y轴方向有取向效应,还定于Y轴的正方向.并且发现,随着振动量子数的增加,对反应体系产物分布的影响就越明显.     

Relative sputtering yields from close-packed directions in nickel under low-energy Ar bombardment

A new approach to low-energy sputtering was developed wherein a monoenergetic Ar⁺ ion beam of the order of 10⁻⁹ A impinged onto a crystalline nickel target. Target preparation consisted of plating about 100 monolayers of high specific activity Ni-63 onto a coldrolled nickel substrate and then heating the target above its recrystallization temperature under ultra-high vacuum. The result was a highly ordered polycrystalline structure which, when sputtered, behaved like the (100) surface of a nickel single crystal. Approximately 25 percent of the surface atoms were Ni-63. Sputtered material was collected on a molybdenum foil which was subsequently analyzed by radiotracer techniques.

Experimental results concerning sputtering from [110] and [100] close-packed directions in nickel under bombardment by Ar⁺ ions of energy 25 eV to 600 eV are reported. The relative sputtering yields from [110] directions are presented as a function of incident ion energy for 75° and 15° ion incidence measured with respect to the [110] directions, and the extrapolated thresholds are compared with theoretical predictions.

In addition to the expected deposits on the foil due to sputtering from individual closepacked directions, secondary deposits occurred which are attributed to specular reflection of sputtered nickel atoms from the molybdenum foil.     

30 keV He~(2+)在不同倾斜角度的聚碳酸酯微孔膜中的传输过程

本文测量了30 keV的He~(2+)入射倾斜角度分别为-0.5~?,-1~?,-1.5~?和-2.5~?的聚碳酸酯纳米微孔膜后,出射粒子角度分布、电荷态分布以及相对穿透率随时间的演化.当微孔膜倾斜角度在-0.5~?,-1~?和-1.5~?时,出射的He~(2+)离子始终保持在入射束流方向,出射的He~0原子出射方向由微孔孔道方向逐渐转移到入射束流方向,在实验过程中观测到明显的电荷交换,这一现象与之前发现的导向效应不同,微孔内部沉积的电荷斑和微孔内表面原子的短程集体散射作用,克服入射离子的横向动量,使入射离子在微孔内表面以上以类似镜面掠射的方式出射,并发生时间演化效应,主要传输机制为电荷斑辅助的表面以上的类似镜面掠射行为.而当倾斜角度在-2.5~?时,出射的He~(2+)离子始终保持在入射束流方向,出射的He~0原子始终保持在微孔孔道方向,沉积的电荷斑很难克服入射离子的横向动量,没有时间演化效应,主要传输机制为微孔内表面以下的多次随机非弹性碰撞过程.这一物理图像使中能离子入射不同倾斜角度的微孔膜物理认识更加深入和完整.     

Study of strong interaction between Pt and TiO2 under oxidizing atmosphere

The strong interaction between Pt and TiO₂ under oxidizing atmosphere was studied by means of X-ray photoelectron spectroscopy (XPS) and Ar⁺ sputtering test. The results obtained show that under oxidizing atmosphere Pt⁰ atoms can thermally diffuse into TiO₂ lattice and be oxidized to Pt²⁺ to substitute for Ti⁴⁺ or form the interstitial ions at 673 K.     

30 keV H+在聚碳酸酯微孔膜中动态输运过程的实验和理论研究

测量了30 keV的H⁺入射倾斜角度为-1°和-2°的聚碳酸酯微孔膜后,出射粒子二维分布图、角度分布、相对穿透率以及出射H⁺电荷态纯度随沉积电荷的演化.实验中30 keV的H⁺在微孔膜中输运特性与之前其他能区离子在微孔膜中输运特性有显著不同,实验中直接观测到出射粒子导向部分和散射部分的动态演化过程,出射的H⁺由沿微孔孔轴方向的导向H⁺和沿入射束流方向的散射H⁺两部分组成,随着微孔内电荷斑的沉积,出射的导向H⁺的占比不断减小,出射散射H⁺占比不断增加;出射H⁰占总出射粒子的比例不断减小,其中心方向逐步向入射束流方向偏转.微孔膜处于不同倾斜角度时,微孔内沉积电荷斑的位置和电场强度是不同的.同时模拟计算了入射H⁺在微孔内部的运动轨迹、微孔内部电荷斑电势和场强分布,实验结果和理论结果得到了很好的验证.对出射离子导向部分和散射部分的动态演化过程的观测和理论解释,使得对中能区离子在微孔膜中输运机制有更好的认识.     

共掺杂Ce~(3+)调控β-NaLuF_4:Yb~(3+)/Ho~(3+)纳米晶体的上转换荧光发射

在980 nm近红外光激发下,通过共掺杂Ce~(3+)离子调控六方相NaLuF_4:Yb~(3+)/Ho~(3+)纳米晶体的上转换荧光发射.实验结果表明,当掺杂Ce~(3+)离子浓度从0增加到12.0%时,Ho~(3+)离子的上转换荧光发射实现了由绿光向红光的转变,其红绿比提高了近24倍.根据Ho~(3+)离子的能级结构发现,Ho~(3+)离子的红光发射源自~5F_5能级到5I8能级的辐射跃迁,因此要增强红光发射,必须提高该能级粒子数布居.Ho~(3+)与Ce~(3+)离子之间相近的能级差促使它们之间产生了共振交叉弛豫,从而有效地提高了Ho~(3+)离子~5F_5能级的粒子数布居,增强了红光发射.同时对Ho~(3+)离子的上转换调控机理进行讨论,并借助不同的激发策略,进一步证实了Ho~(3+)与Ce~(3+)离子之间相互作用的发生.     

Synthesis and properties of a new copper(II)-hafnium phosphate Cu0.5Hf2(PO4)3

Phosphates of general formula M_0.5Hf₂(PO₄)₃ with M=Cd²⁺, Ca²⁺, Sr²⁺ and Cu²⁺ were prepared by coprecipitation and characterized by several physical techniques. The compounds containing Cd²⁺, Ca²⁺, Sr²⁺ belong to the Nasicon-type structure, whereas Cu_0.5Hf₂(PO₄)₃ exhibited substantially different DRX patterns. Combined temperature programmed reduction (TPR) and temperature-programmed oxidation (TPO) showed that the copper in Cu_0.5Hf₂(PO₄)₃ was distributed between two energetically different sites in proportions respectively equal to 40 and 60%. Electron Paramagnetic Resonance (EPR) investigations confirmed the TPR/TPO results and revealed that the two sites hosting the Cu²⁺ ions are of orthorhombic symmetry. Moreover, the Cu²⁺ ions might be reduced by hydrogen to Cu⁺. These results were also supported by the UV–visible studies that showed the disappearance, under reducing conditions, of the band corresponding to crystal field transitions of Cu²⁺ ions and the emergence of a new peak attributed to the transitions between (3d)¹⁰ and (3d)⁹(4s)¹ Cu⁺ levels. At the same time, IR spectroscopy confirmed that protons entered the open lattice framework of the material and gave rise to a new protonated phase containing monovalent copper Cu_0.5^IH_0.5Hf₂(PO₄)₃. This redox process was proven to be reversible without any subsequent change in the network of the phosphate.     

掺杂离子对白色长余辉发光材料Y2O2S:Tb3+, Eu3+,M2+ (M=Mg,Ca, Sr,Ba),Zr4+性能的影响

采用高温固相法制备了白色长余辉发光材料Y₂O₂S:Tb³⁺, Eu³⁺,M²⁺(M=Mg, Ca, Sr, Ba), Zr⁴⁺, 利用X晶体衍射、发光光谱、余辉曲线和热释光曲线等对制备的材料进行表征。结果表明:掺杂离子没有改变样品晶体结构和发射峰的位置,但对其发光强度、余辉时间及陷阱深度有较大的影响。在263 nm紫外光的激发下,469 nm和626 nm的发射分别对应于Eu³⁺的⁵D₂→⁷F₀、⁵D₀→⁷F₂跃迁,544 nm的发射对应于Tb³⁺的⁵D₄→⁷F₅跃迁,主要通过它们的混合产生白光。掺杂不同二价离子样品的余辉性能按Mg²⁺、Sr²⁺、Ca²⁺、Ba²⁺的顺序递减,其中掺杂Mg²⁺的样品,色度坐标为(0.29,0.32),陷阱深度为1.17 eV,余辉时间长达320 s(≥1 mcd/m²),表现出最佳的发光性能。     

A molecular dynamics simulation of ultrathin oxide films onsilicon: Growth by thermal O atoms and sputtering by 100 eV Ar+ ions

Molecular dynamics was applied to study the growth and sputtering of ultrathin oxide films on (100) Si surfaces. A multibody potential which stabilized the Si/SiO₂ interface was used for this purpose. Oxide growth by exposure to O atoms was found to follow Langmuir-type kinetics with unity initial sticking coefficient of O and saturation coverage of around four monolayers, in agreement with experimental data. Sputtering of an ultrathin oxide film on silicon by 100 eV Ar⁺ ions was simulated to study ion-assisted surface cleaning. Ion irradiation was found to promote restructuring of the surface into oxide islands, as observed experimentally. Island formation was accompanied with an increase in surface roughness. The evolution of the surface state with ion dose was predicted quantitatively     

不同玻璃组分对β-NaYF4:Yb3+,Er3+/Tm3+粉体的侵蚀性研究及对发光性能的影响

选用硅酸盐、硼酸盐以及磷酸盐3种常用的玻璃体系,与β-NaYF₄:Yb³⁺,Er³⁺/Tm³⁺粉体均匀混合压片后在不同的温度(400～700 ℃)下进行热处理。采用X射线衍射技术和荧光光谱技术等测试手段研究不同玻璃形成体以及碱金属离子对β-NaYF₄:Yb³⁺,Er³⁺/Tm³⁺粉体的侵蚀情况以及对发光性能的影响。研究结果表明,在硼酸盐玻璃体系与β-NaYF₄:Yb³⁺,Er³⁺/Tm³⁺粉体复合热处理过程中,Li⁺和K⁺离子会取代β-NaYF₄晶体中Na原子的位置。 在相同热处理温度下,不同玻璃体系与β-NaYF₄晶体反应剧烈程度:磷酸盐>硼酸盐>硅酸盐。     

中能Ne~(4+)离子诱导的羰基硫分子三体碎裂动力学分析

利用反应显微成像谱仪开展了56 keV/u的Ne~(4+)离子与羰基硫(OCS)气体的交叉碰撞实验,研究了Ne~(4+)离子诱导的OCS~(3+)的碎裂动力学.通过符合探测三个末态离子,重构了OCS~(3+)离子三体碎裂对应的牛顿图和Dalitz图,并明确区分了直接解离和次序解离两种碎裂过程.重构了OCS~(3+)离子解离过程的动能释放(KER)分布,发现其峰值在25 eV处,同时在18 eV处有肩膀结构的存在,其中25 eV左右的峰来源于直接解离过程,18 eV处的肩膀结构来源于次序解离和非次序解离两种过程.通过分析不同能量和不同电荷态下重离子碰撞实验所得到的KER谱,发现微扰强度不是影响态布居的主要因素.OCS~(3+)次序解离中的第二步KER的峰值在6.2 eV处.结合以往的实验结果,我们得出结论:多电离态的分子发生次序碎裂的根源在于二价离子碎片存在亚稳态,而重构得到的第二步KER可以反映亚稳态离子的电子态信息.     

Y3+和Gd3+对LaBO3:Eu3+发光粉结构和发光性能的影响

采用溶胶凝胶-燃烧法合成了系列不同掺杂浓度Y³⁺和Gd³⁺的LaBO₃∶Eu³⁺发光粉,对其结构、形貌和发光性能进行了表征。XRD研究结果表明：发光粉的结构与基质掺杂离子的种类和掺杂浓度有关系。荧光光谱结果表明：适量比例Y³⁺和Gd³⁺离子掺杂将提高LaBO₃∶Eu³⁺发光粉的发光强度。Y³⁺和Gd³⁺离子最佳掺杂摩尔分数分别为1.5%和12.5%。⁵D₀→⁷F₂与⁵D₀→⁷F₁跃迁发射的相对强度比值说明：掺杂改变LaBO₃∶Eu³⁺中Eu³⁺局域环境的对称性。发光性能改变主要受晶体结构、掺杂离子电负性影响。Gd³⁺离子掺杂更有利于发光粉结构稳定性和发光性能的改善。     

Er3+单掺和Er3+/Yb3+共掺碲酸盐玻璃的光谱性质及能量传递

采用高温熔融法制备了新型Er3+单掺和Er3 +/Yb3+共掺的TeO2-Bi2O3-SiO2-B2O3玻璃,测试并分析了样品的吸收光谱、发射光谱以及Er3 +/Yb3共掺杂样品的发射光谱和荧光寿命.计算出了玻璃的J-O强度系数Ωt(t=2,4,6);系统讨论了Er3+/Yb3+共掺杂样品在808 nm激光激发下,Yb...     

低速Xe~(q+)(4≤q≤20)离子与Ni表面碰撞中的光辐射

实验中测量了0.38V_(Bohr)(460 keV)高电荷态Xe~(q+)(4≤q≤20)离子轰击高纯Ni表面发射的400-510 nm光谱.实验结果包括NiⅠ原子谱线,NiⅡ离子谱线,以及入射离子中性化发射的XeⅠ,XeⅡ和XeⅢ谱线.研究了谱线XeⅡ410.419,XeⅢ430.444,XeⅡ434.200,XeⅡ486.254,NiⅠ498.245,NiⅠ501.697,NiⅠ503.502,NiⅠ505.061和NiⅠ508.293 nm的光子产额随着入射离子电荷态的变化.结果表明,入射离子中性化和溅射Ni原子发射谱线的光子产额随着入射离子电荷态的增加而增加,其趋势与入射离子势能一致.     

Er3+/Yb3+共掺NaYF4/LiYF4微米晶体的上转换荧光特性

采用水热法成功制备了Er³⁺/Yb³⁺共掺杂的NaYF₄和LiYF₄微米晶体. 通过X射线衍射仪和环境扫描电子显微镜对样品的晶体结构及形貌进行表征. 实验结果表明: 六方相NaYF₄微米晶体为棒状结构, 而四方相LiYF₄微米晶体则为八面体结构. 在近红外光980 nm激发下, NaYF₄:Yb³⁺/Er³⁺和LiYF₄:Yb³⁺/Er³⁺ 微米晶体均展现出很强上转换荧光发射. 且NaYF₄:Yb³⁺/Er³⁺微米晶体的荧光发射强度大约是LiYF₄:Yb³⁺/Er³⁺微米晶体的2倍, 但红绿比明显较低. 根据荧光光谱, 并借助激光光谱学及发光动力学深入探讨基质变化及表面修饰剂乙二胺四乙二酸(EDTA)对荧光特性的影响. 实验结果发现: 影响荧光强度的主要因素是基质环境的局域对称性, 而导致不同红绿比则是由于样品表面较多的EDTA分子所引起. Er³⁺掺杂的NaYF₄和LiYF₄ 微米晶体呈现出很强的绿光发射可被应用于全色显示, 荧光粉和微光电子器件中.