Remarkably volatile copper(II) complexes of N,N'-unsymmetrically substituted 1,3-diketimines as precursors for Cu metal deposition via CVD or ALD

To enhance the volatility of the copper precursor in the copper deposition process, it was envisioned that N,N'-unsymmetrically substituted 1,3-diketimines should be more volatile than their symmetrically substituted counterparts. A variety of Cu(II) (N,N'-unsymmetrically substituted 1,3-diketiminate) complexes have been synthesized and have proven to be much more volatile than their symmetrical counterparts. This makes the new materials particularly attractive to the ALD and CVD processes. Among the new compounds, 8-a and 8-b are sublimable even at room temperature.     

Mechanism for the atomic layer deposition of copper using diethylzinc as the reducing agent: a density functional theory study using gas-phase molecules as a model

We present theoretical studies based on first-principles density functional theory calculations for the possible gas-phase mechanism of the atomic layer deposition (ALD) of copper by transmetalation from common precursors such as Cu(acac)(2), Cu(hfac)(2), Cu(PyrIm(R))(2) with R = (i)Pr and Et, Cu(dmap)(2), and CuCl(2) where diethylzinc acts as the reducing agent. An effect on the geometry and reactivity of the precursors due to differences in electronegativity, steric hindrance, and conjugation present in the ligands was observed. Three reaction types, namely, disproportionation, ligand exchange, and reductive elimination, were considered that together comprise the mechanism for the formation of copper in its metallic state starting from the precursors. A parallel pathway for the formation of zinc in its metallic form was also considered. The model Cu(I) molecule Cu(2)L(2) was studied, as Cu(I) intermediates at the surface play an important role in copper deposition. Through our study, we found that accumulation of an LZnEt intermediate results in zinc contamination by the formation of either Zn(2)L(2) or metallic zinc. Ligand exchange between Cu(II) and Zn(II) should proceed through a Cu(I) intermediate, as otherwise, it would lead to a stable copper molecule rather than copper metal. Volatile ZnL(2) favors the ALD reaction, as it carries the reaction forward.     

Role of Anionic Backbone in NHC-Stabilized Coinage Metal Complexes: New Precursors for Atomic Layer Deposition**

Cu and Ag precursors that are volatile, reactive, and thermally stable are currently of high interest for their application in atomic-layer deposition (ALD) of thin metal films. In pursuit of new precursors for coinage metals, namely Cu and Ag, a series of new N-heterocyclic carbene (NHC)-based Cu^I and Ag^I complexes were synthesized. Modifications in the substitution pattern of diketonate-based anionic backbones led to five monomeric Cu complexes and four closely related Ag complexes with the general formula [M(^tBuNHC)(R)] (M=Cu, Ag; ^tBuNHC=1,3-di-tert-butyl-imidazolin-2-ylidene; R=diketonate). Thermal analysis indicated that most of the Cu complexes are thermally stable and volatile compared to the more fragile Ag analogs. One of the promising Cu precursors was evaluated for the ALD of nanoparticulate Cu metal deposits by using hydroquinone as the reducing agent at appreciably low deposition temperatures (145–160 °C). This study highlights the considerable impact of the employed ligand sphere on the structural and thermal properties of metal complexes that are relevant for vapor-phase processing of thin films.     

Investigation of the mechanism of electroless deposition of copper on functionalized alkanethiolate self-assembled monolayers adsorbed on gold

We have investigated the reaction pathways involved in the unseeded electroless deposition of copper on self-assembled monolayers (SAMs) adsorbed on Au, using time-of-flight secondary ion mass spectrometry, optical microscopy, and scanning electron microscopy. At 22 degrees C copper deposits on both -CH3 and -COOH terminated SAMs. No copper deposition is observed on -OH terminated SAMs because the hydroxyl terminal groups react with formaldehyde in the plating solution, forming an acetal which prevents Cu deposition. At higher deposition temperatures (45 degrees C), no Cu is observed to deposit on -CH3 terminated SAMs because Cu2+ ions are not stabilized on the SAM surface. Copper complexes are still able to form with the -COOH terminal group at 45 degrees C, and so copper continues to be deposited on -COOH terminated SAMs. Copper also penetrates through -CH3 and -COOH terminated SAMs to the Au/S interface, suggesting that soft deposition techniques do not prevent the penetration of low-to-moderate reactivity metals through organic films.     

Seedless growth of free-standing copper nanowires by chemical vapor deposition

Free-standing copper nanowires were synthesized by a chemical vapor deposition process at low substrate temperatures using Cu(etac)[P(OEt)3]2 as a precursor. The process requires neither templates nor catalysts to produce copper nanowires of 70-100 nm in diameter, which exhibited high purity and crystallinity with [111] orientation. The grain structures of the films deposited from a series of Cu(I) alkyl 3-oxobutanoate complexes indicated that the high precursor stability was responsible for the columnar growth of the grains, which was evolved to the nanowires eventually.     

Effect of atomic layer deposition coatings on the surface structure of anodic aluminum oxide membranes

Anodic aluminum oxide (AAO) membranes were characterized by UV Raman and FT-IR spectroscopies before and after coating the entire surface (including the interior pore walls) of the AAO membranes by atomic layer deposition (ALD). UV Raman reveals the presence of aluminum oxalate in bulk AAO, both before and after ALD coating with Al2O3, because of acid anion incorporation during the anodization process used to produce AAO membranes. The aluminum oxalate in AAO exhibits remarkable thermal stability, not totally decomposing in air until exposed to a temperature >900 degrees C. ALD was used to cover the surface of AAO with either Al2O3 or TiO2. Uncoated AAO have FT-IR spectra with two separate types of OH stretches that can be assigned to isolated OH groups and hydrogen-bonded surface OH groups, respectively. In contrast, AAO surfaces coated by ALD with Al2O3 display a single, broad band of hydrogen-bonded OH groups. AAO substrates coated with TiO2 show a more complicated behavior. UV Raman results show that very thin TiO2 coatings (1 nm) are not stable upon annealing to 500 degrees C. In contrast, thicker coatings can totally cover the contaminated alumina surface and are stable at temperatures in excess of 500 degrees C.     

Complexes of functionalized dipyrido[3,2-a:2',3'-c]-phenazine: a synthetic, spectroscopic, structural, and density functional theory study

The ligands 11-bromodipyrido[3,2-a:2',3'-c]phenazine and ethyl dipyrido[3,2-a:2',3'-c]phenazine-11-carboxylate have been prepared and coordinated to ruthenium(II), rhenium(I), and copper(I) metal centers. The electronic effects of substitution of dipyrido[2,3-a:3',2'-c]phenazine (dppz) have been investigated by spectroscopy and electrochemistry, and some photophysical properties have been studied. The crystal structures of [Re(L)(CO)(3)Cl] (L = ethyl dipyrido[3,2-a:2',3'-c]phenazine-11-carboxylate or 11-bromodipyrido[3,2-a:2',3'-c]phenazine) are presented. Density functional theory calculations on the complexes show only small deviations in bond lengths and angles (most bonds within 0.02 Angstroms, most angles within 2 degrees) from the crystallographic data. Furthermore, the vibrational spectra of the strongest Raman and IR bands are predicted to within an average 6 cm(-1) for the complexes [Re(L)(CO)(3)Cl] and [Cu(L)(triphenylphosphine)(2)]BF(4) (in the 1000-1700 cm(-1) region). Spectroscopic and electrochemical evidence suggest that reduction of the complex causes structural changes across the entire dppz ligand. This is unusual as dppz-based ligands typically have electrochemical properties that suggest charge localization with reduction on the phenazine portion of the ligand. The excited-state lifetimes of the complexes have been measured, and they range from ca. 200 ns for the [Ru(L)(2,2'-bipyridine)(2)](PF(6))(2) complexes to over 2 mus for [Cu(11-bromodipyrido[3,2-a:2',3'-c]phenazine)(PPh(3))(2)](BF(4)) at room temperature. The emission spectra suggest that the unusually long-lived excited states of the copper complexes result from metal-to-ligand charge transfer (MLCT) transitions as they are completely quenched in methanol. Electroluminescent films may be fabricated from these compounds; they show MLCT state emission even at low doping levels [<0.1% by weight in poly(vinylcarbazole) polymer matrix].     

Coordination polyhedron and chemical vapor deposition of Cu(hfacac)2(t-BuNH2)

A new pentacoordinate Cu(II) complex, Cu(hfacac)(2)(t-BuNH(2)) [hfacac = CF(3)C(O)CHC(O)CF(3)(-), t-BuNH(2) = tert-butylamine], has been synthesized and structurally characterized. Interestingly, the structure of a single crystal occurred as square pyramidal with one O atom at the apical position and one N and three O atoms at the basal positions, showing a serious degree of distortion. This contrasts with the square-pyramidal structure of Cu(hfacac)(2)L (L = H(2)O and pyrazine), which has the L ligand at the axial position. In the Cu(hfacac)(2)(t-BuNH(2)) complex, the t-BuNH(2) ligand is placed at an equatorial position with a lowered angle by 19.9(2) degrees from the basal plane. This distortion seems to reduce sigma influence and steric hindrance and so stabilizes the square-pyramidal geometry. This precursor has a lower melting point and superior stability to air, moisture, and heat than the Cu(hfacac)(2)(xH(2)O) precursor. The deposition rate of copper oxide film on a Pt layer above 450 degrees C was nearly constant with increasing temperature, indicating a mass transport limited reaction. Therefore it would be a useful metal organic chemical vapor deposition precursor for the fabrication of copper oxide film or superconducting materials. Crystal data for Cu(hfacac)(2)(t-BuNH(2)): 293(2) K, a = 9.6699(4) A, b = 18.0831(10) A, c = 12.8864(11) A, beta = 111.839(5) degrees, monoclinic, space group P2(1)/c, Z = 4.     

New heteroleptic bis-phenanthroline copper(I) complexes with dipyridophenazine or imidazole fused phenanthroline ligands: spectral, electrochemical, and quantum chemical studies

Two new sterically challenged diimine ligands L(1) (2,9-dimesityl-2-(4'-bromophenyl)imidazo[4,5-f][1,10]phenanthroline) and L(2) (3,6-di-n-butyl-11-bromodipyrido[3,2-a:2',3'-c]phenazine) have been synthesized with the aim to build original heteroleptic copper(I) complexes, following the HETPHEN concept developed by Schmittel and co-workers. The structure of L(1) is based on a phen-imidazole molecular core, derivatized by two highly bulky mesityl groups in positions 2 and 9 of the phenanthroline cavity, preventing the formation of a homoleptic species, while L(2) is a dppz derivative, bearing n-butyl chains in α positions of the chelating nitrogen atoms. The unambiguous formation of six novel heteroleptic copper(I) complexes based on L(1), L(2), and complementary matching ligands (2,9-R(2)-1,10-phenanthroline, with R = H, methyl, n-butyl or mesityl) has been evidenced, and the resulting compounds were fully characterized. The electronic absorption spectra of all complexes fits well with DFT calculations allowing the assignment of the main transitions. The characteristics of the emissive excited state were investigated in different solvents using time-resolved single photon counting and transient absorption spectroscopy. The complexes with ligand L(2), bearing a characteristic dppz moiety, exhibit a very low energy excited-state which mainly leads to fast nonradiative relaxation, whereas the emission lifetime is higher for those containing the bulky ligand L(1). For example, a luminescence quantum yield of about 3 × 10(-4) is obtained with a decay time of about 50 ns for C2 ([Cu(I)(nBu-phen)(L(1))](+)) with a weak influence of strong coordinating solvent on the luminescence properties. Overall, the spectral features are those expected for a highly constrained coordination cage. Yet, the complexes are stable in solution, partly due to the beneficial π stacking between mesityl groups and vicinal phenanthroline aromatic rings, as evidenced by the X-ray structure of complex C3 ([Cu(I)(Mes-phen)(L(2))](+)). Electrochemistry of the copper(I) complexes revealed reversible anodic behavior, corresponding to a copper(I) to copper(II) transition. The half wave potentials increase with the steric bulk at the level of the copper(I) ion, reaching a value as high as 1 V vs SCE, with the assistance of ligand induced electronic effects. L(1) and L(2) are further end-capped by a bromo functionality. A Suzuki cross-coupling reaction was directly performed on the complexes, in spite of the handicapping lability of copper(I)-phenanthroline complexes.     

Copper in Acid Chloride Solutions: Electrochemical Behavior by Quartz Microgravimetry and Voltammetry

The cathodic deposition of copper on a gold electrode and its subsequent anodic dissolution in an acid chloride solution, where two successive stages of a one-electron transfer are distinguishable because of the stability of chloride complexes of Cu(I), is studied by voltammetry and quartz microgravimetry. The formation of a film of an intermediate compound of Cu(I) during the deposition and dissolution of copper is revealed experimentally. Techniques for identifying the intermediate solid species are suggested. During a cathodic polarization, a film of intermediate compound CuCl forms at a reduced concentration of chloride ions in the Cu(II)/Cu(I) process, while during the anodic dissolution of the copper deposit formed during the cathodic polarization the intermediates appear in the Cu(0)/Cu(I) process, the concentration of chloride ions notwithstanding. The change in the electrochemical behavior of the system caused by a decrease in the concentration of chloride ions is explained.     

63Cu NMR spectroscopy of copper(I) complexes with various tridentate ligands: CO as a useful 63Cu NMR probe for sharpening 63Cu NMR signals and analyzing the electronic donor effect of a ligand

63Cu NMR spectroscopic studies of copper(I) complexes with various N-donor tridentate ligands are reported. As has been previously reported for most copper(I) complexes, 63Cu NMR signals, when acetonitrile is coordinated to copper(I) complexes of these tridentate ligands, are broad or undetectable. However, when CO is bound to tridentate copper(I) complexes, the 63Cu NMR signals become much sharper and show a large downfield shift compared to those for the corresponding acetonitrile complexes. Temperature dependence of 63Cu NMR signals for these copper(I) complexes show that a quadrupole relaxation process is much more significant to their 63Cu NMR line widths than a ligand exchange process. Therefore, an electronic effect of the copper bound CO makes the 63Cu NMR signal sharp and easily detected. The large downfield shift for the copper(I) carbonyl complex can be explained by a paramagnetic shielding effect induced by the copper bound CO, which amplifies small structural and electronic changes that occur around the copper ion to be easily detected in their 63Cu NMR shifts. This is evidenced by the correlation between the 63Cu NMR shifts for the copper(I) carbonyl complexes and their nu(C[triple bond]O) values. Furthermore, the 63Cu NMR shifts for copper(I) carbonyl complexes with imino-type tridentate ligands show a different correlation line with those for amino-type tridentate ligands. On the other hand, 13C NMR shifts for the copper bound 13CO for these copper(I) carbonyl complexes do not correlate with the nu(C[triple bond]O) values. The X-ray crystal structures of these copper(I) carbonyl complexes do not show any evidence of a significant structural change around the Cu-CO moiety. The findings herein indicate that CO complexation makes 63Cu NMR spectroscopy much more useful for Cu(I) chemistry.     

Pb deposition on I-coated Au(111). UHV-EC and EC-STM studies

This article concerns the growth of an atomic layer of Pb on the Au(111)( radical3 x radical3)R30 degrees -I structure. The importance of this study lies in the use of Pb underpotential deposition (UPD) as a sacrificial layer in surface-limited redox replacement (SLRR). SLRR reactions are being applied in the formation of metal nanofilms via electrochemical atomic layer deposition (ALD). Pb UPD is a surface-limited reaction, and if it is placed in a solution of ions of a more noble metal, redox replacement can occur, but limited by the amount of Pb present. Pb UPD is a candidate for use as a sacrificial layer for replacement by any more noble element. It has been used by this group for both Cu and Pt nanofilm formation using electrochemical ALD. The I atom layer was intended to facilitate electrochemical annealing during nanofilm growth. Two distinctly different Pb atomic layer structures are reported, studied using in situ scanning tunneling microscopy (STM) with an electrochemical flow cell and ultrahigh vacuum surface analysis combined directly with electrochemical reactions (UHV-EC). Starting with the initial Au(111)( radical3 x radical3)R30 degrees -I, 1/3 monolayer of I on the Au(111) surface, Pb deposition began at approximately 0.1 V. The first Pb UPD structure was observed just below -0.2 V and displayed a (2 x radical3)-rect unit cell, for a structure composed of 1/4 monolayer each of Pb and I. The I atoms fit in Pb 4-fold sites, on the Au(111) surface. The structure was present in domains rotated by 120 degrees. Deposition to -0.4 V resulted in complete loss of the I atoms and formation of a Pb monolayer on the Au(111), which produced a Moiré pattern, due to the Pb and Au lattice mismatch. These structures represent two well-defined starting points for the growth of nanofilms of other more noble elements. It is apparent from these studies that the adsorption of I- on Pb is weak, and it will rinse away. If Pb is used as a sacrificial metal in an electrochemical ALD cycle and adsorbed I atoms are employed for electrochemical annealing, I atoms will need to be applied each cycle.     

Synthesis and characterization of copper(I) amidinates as precursors for atomic layer deposition (ALD) of copper metal

A series of copper(I) amidinates of the general type [(R'NC(R)NR')Cu](2) (R' and R' = n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl; R = methyl, n-butyl) have been synthesized and characterized. These compounds are planar dimers, bridged by nearly linear N-Cu-N bonds. Their properties (volatility, low melting point, high thermal stability, and self-limited surface reactivity) are well-suited for atomic layer deposition (ALD) of copper metal films that are pure, highly conductive, conformal, and strongly adherent to substrates.     

Ce(IV) complexes with donor-functionalized alkoxide ligands: improved precursors for chemical vapor deposition of CeO2

Thin films of ceria (CeO(2)) have many applications, and their synthesis by liquid-injection MOCVD (metal-organic chemical vapor deposition) or ALD (atomic layer deposition) requires volatile precursor compounds. Here we report the synthesis of a series of homoleptic and heteroleptic Ce(IV) complexes with donor-functionalized alkoxide ligands mmp (1-methoxy-2-methylpropan-2-olate), dmap (1-(dimethylamino)propan-2-olate), and dmop (2-(4,4-dimethyl-4,5-dihydrooxazol-2-yl)propan-2-olate) and their potential as precursors for MOCVD and ALD of CeO(2). New complexes were synthesized by alcohol exchange reactions with [Ce(OBu(t))(4)]. [Ce(mmp)(4)] and [Ce(dmap)(4)] were both found to be excellent precursors for liquid-injection MOCVD of CeO(2), depositing high purity thin films with very low carbon contamination, and both have a large temperature window for diffusion controlled growth (350-600 °C for [Ce(mmp)(4)]; 300-600 °C for [Ce(dmap)(4)]). [Ce(mmp)(4)] is also an excellent precursor for liquid-injection ALD of CeO(2) using H(2)O as oxygen source and demonstrates self-limiting growth from 150 to 350 °C. [Ce(dmap)(4)] has lower thermal stability than [Ce(mmp)(4)] and does not show self-limiting growth in ALD. Heteroleptic complexes show a tendency to undergo ligand redistribution reactions to form mixtures in solution and are unsuitable as precursors for liquid-injection CVD.     

Synthesis and characterisation of cyclopentadienyl complexes of barium: precursors for atomic layer deposition of BaTiO3

Cyclopentadienyl complexes Ba(C5Me5)2(THF)2 (1), Ba(C5Me5)2(A) (A = THF, dien, trien, diglyme, triglyme) (2-5), Ba(Pr(i)3C5H2)2(THF)2 (6), Ba(Bu(t)3C5H2)2(THF) (7), Ba(Me2NC2H4C5Me4)2 (8) and Ba(EtOC2H4C5Me4)2 (9) were prepared and characterised with TGA/SDTA, NMR and MS. Crystal structures of 2, 4, 5, 7, 8 and 9 are presented. All complexes prepared sublime under reduced pressure and complexes 1, 6 and 7 showed volatility also under atmospheric pressure. Complexes 1, 6 and 7 lose the coordinated THF when evaporated while complexes 2-5 are sublimable as complete molecules under reduced pressure. Complexes with bulky cyclopentadienyl ligands (6 and 7) are the most thermally stable and volatile among the prepared barocenes. X-ray structure determinations reveal that all the complexes studied are monomeric. Complexes 1, 7 and 8 were successfully tested in BaTiO3 thin film depositions by atomic layer deposition (ALD).     

Structural and electronic differences of copper(I) complexes with tris(pyrazolyl)methane and hydrotris(pyrazolyl)borate ligands

Copper(I) complexes with tripodal nitrogen-containing neutral ligands such as tris(3,5-diisopropyl-1-pyrazolyl)methane (L1') and tris(3-tertiary-butyl-5-isopropyl-1-pyrazolyl)methane (L3'), and with corresponding anionic ligands such as hydrotris(3,5-diisopropyl-1-pyrazolyl)borate (L1-) and hydrotris(3-tertiary-butyl-5-isopropyl-1-pyrazolyl)borate (L3-) were synthesized and structurally characterized. Copper(I) complexes [Cu(L1')Cl] (1), [Cu(L1')(OClO3)] (2), [Cu(L1')(NCMe)](PF6) (3a), [Cu(L1')(NCMe)](ClO4) (3b), [Cu(L1')(CO)](PF6) (4a), and [Cu(L1')(CO)](ClO4) (4b) were prepared using the ligand L1'. Copper(I) complexes [Cu(L3')Cl] (5) and [Cu(L3')(NCMe)](PF6) (6) with the ligand L3' were also synthesized. Copper(I) complexes [Cu(L1)(NCMe)] (7) and [Cu(L1)(CO)] (8) were prepared using the anionic ligand L1-. Finally, copper(I) complexes with anionic ligand L3- and acetonitrile (9) and carbon monoxide (10) were synthesized. The complexes obtained were fully characterized by IR, far-IR, 1H NMR, and 13C NMR spectroscopy. The structures of both ligands, L1' and L3', and of complexes 1, 2, 3a, 3b, 4a, 4b, 5, 6, 7, and 10 were determined by X-ray crystallography. The effects of the differences in (a) the fourth ligand and the counteranion, (b) the steric hindrance at the third position of the pyrazolyl rings, and most importantly, (c) the charge of the N3 type ligands, on the structures, spectroscopic properties, and reactivities of the copper(I) complexes are discussed. The observed differences in the reactivities toward O2 of the copper(I) acetonitrile complexes are traced back to differences in the oxidation potentials determined by cyclic voltammetry. A special focus is set on the carbonyl complexes, where the 13C NMR and vibrational data are presented. Density functional theory (DFT) calculations are used to shed light on the differences in CO bonding in the compounds with neutral and anionic N3 ligands. In correlation with the vibrational and electrochemical data of these complexes, it is demonstrated that the C-O stretching vibration is a sensitive probe for the "electron richness" of copper(I) in these compounds.     

The first hexanuclear copper(I) carboxylate: X-ray crystal structure and reactivity in solution and gas-phase reactions

The carboxylate ligand-exchange reaction of copper(I) trifluoroacetate by 3,5-difluorobenzoate yielded a new product, [Cu(O2C(3,5-F)2C6H3)] (1). Single crystals of 1 suitable for X-ray structural characterization were obtained by sublimation-deposition procedures at 230 degrees C. An X-ray diffraction study revealed a remarkable planar hexanuclear copper(I) core supported by bridging carboxylates, the first such structural type among other known copper(I) carboxylates. The Cu...Cu distances within the core range from 2.7064(8) to 2.8259(8) A and fall into the category of cuprophillic interactions. The hexacopper unit remains intact upon gas-phase deposition with a planar polyarene, coronene (C24H12), to give [Cu6(O2C(3,5-F)2C6H3)6](C24H12) (2). Density functional theory calculations suggest the latter compound to be a cocrystallization product having electrostatic interactions between the hexacopper complex and coronene. However, cocrystallization affects the photophysical properties of 2. While copper(I) 3,5-difluorobenzoate (1) exhibits photoluminescence at ca. 554 nm (lambda(ex) = 350 nm) in the solid state, compound 2 is nonluminescent at room temperature in the visible region. Gas-phase and solution reactions of 1 with alkyne ligands, diphenylacetylene (C14H10) and 1,4-bis(p-tolylethynyl)benzene (C24H18), result in the rupture of the [Cu6] core to afford dinuclear organometallic copper(I) complexes. The latter have a dimetal core cis-bridged by two carboxylate groups with acetylene ligands eta(2)-coordinated to each copper(I) center.     

Selective electroless deposition of copper on organic thin films with improved morphology

We have investigated the selective electroless deposition (ELD) of Cu on functionalized self-assembled monolayers (SAMs). Previous studies have demonstrated that Cu deposits on -COOH and -CH(3) terminated SAMs using ELD. However, the deposited films were rough and contained irregular crystallites. Further, the copper penetrated through the film. In this Article, we demonstrate that copper can be selectively deposited on -COOH terminated SAMs with improved morphology and without penetration of copper through the organic layer. The method employs a Cu(II) seed layer and an additive, adenine or guanine. We demonstrate the efficacy of the technique on photopatterned -CH(3)/-COOH SAMs. Copper is observed to deposit only atop the -COOH terminated SAM area and not on the -CH(3) terminated SAM. The use of a Cu(II) seed layer increased the Cu ELD rate on both -COOH and -CH(3) terminated SAMs. The deposited copper layer strongly adheres to the -COOH terminated SAMs because the copper layer nucleates at Cu(2+)-carboxylate complexes. In contrast, the deposited copper layer can easily be removed from the -CH(3) terminated SAM surface because there is no specific copper-surface interaction. The additives adenine and guanine mediate the interaction of Cu(2+) and the deprotonated -COOH terminated SAMs via the formation of additive-carboxylate complexes. These complexes lead to significantly reduced copper penetration through the SAM. In the case of adenine, the diffusion of copper through the organic film was eliminated. This new technique for copper deposition will facilitate the development of inexpensive molecular electronics, sensors, and other nanotechological devices.     

Valence tautomerism and metal-mediated catechol oxidation for complexes of copper prepared with 9,10-phenanthrenequinone

Bis(pyridine)(9,10-phenanthrenequinone)(9,10-phenanthrenediolato)copper(II), Cu(py)(2)(PhenCat)(PhenBQ), has been prepared by treating copper metal with 9,10-phenanthrenequinone in pyridine solution. In dilute solution, both Cu(py)(2)(PhenCat)(PhenBQ) and the related complex Cu(tmeda)(PhenCat)(PhenBQ) lose PhenBQ to form Cu(II)L(2)(PhenCat), where L(2)= tmeda, 2 py. EPR spectra recorded at temperatures between 300 and 77 K reveal the presence of species with radical and metal localized spins together at equilibrium. Equilibria between Cu(II)L(2)(PhenCat) and Cu(I)L(2)(PhenSQ) redox isomers are solvent dependent, with a shift to higher temperature for polar solvents. Both complexes are oxygen sensitive, reacting with dioxygen to give complexes of diphenic acid. Structural characterization on products obtained with tmeda show that dioxygen insertion across the C-C bond within the chelate ring leads to dimeric products with adjacent Cu(II) ions bridged by diphenate ligands. The addition of O(2) to Cu(tmeda)(PhenCat) in acetonitrile solution at 0 degrees C appears to form a peroxo complex, tentatively identified as Cu(tmeda)(O(2))(PhenQ) on the basis of iodometric titration, as the precursor to the diphenate complex.     

Quantitative evaluation of d-pi interaction in copper(I) complexes and control of copper(I)-dioxygen reactivity

Crystal structures of the copper(I) complexes 1(X), 2, and 3 of a series of tridentate ligands L1(X), L2, and L3, respectively (L1(X): p-substituted derivatives of N,N-bis[2-(2-pyridyl)ethyl]-2-phenylethylamine; X=H, Me, OMe, Cl, NO(2); L2: N,N-bis[2-(2-pyridyl)ethyl]-2-methyl-2-phenylethylamine; L3: N,N-bis[2-(2-pyridyl)ethyl]-2,2-diphenylethylamine) were solved to demonstrate that all the copper(I) complexes involve an eta(2) copper-arene interaction with the phenyl ring of the ligand sidearm. The Cu(I) ion in each complex has a distorted tetrahedral geometry consisting of the three nitrogen atoms (one tertiary amine nitrogen atom and two pyridine nitrogen atoms) and C(1)-C(2) of the phenyl ring of ligand sidearm, whereby the Cu-C distances of the copper-arene interaction significantly depend on the para substituents. The existence of the copper-arene interaction in a nonpolar organic solvent (CH(2)Cl(2)) was demonstrated by the observation of an intense MLCT band around 290 nm, and the magnitude of the interaction was evaluated by detailed analysis of the (1)H and (13)C NMR spectra and the redox potentials E(1/2) of the copper ion, as well as by means of the ligand-exchange reaction between the phenyl ring and CH(3)CN as an external ligand. The thermodynamic parameters DeltaH(o) and DeltaS(o) for the ligand-exchange reaction with CH(3)CN afforded a quantitative measure for the energy difference of the copper-arene interaction in the series of copper(I) complexes. Density functional studies indicated that the copper(I)-arene interaction mainly consists of the interaction between the d(z(2) ) orbital of Cu(I) and a pi orbital of the phenyl ring. The copper(I) complexes 1(X) reacted with O(2) at -80 degrees C in CH(2)Cl(2) to give the corresponding (micro-eta(2):eta(2)-peroxo)dicopper(II) complexes 4, the formation rates k(obs) of which were significantly retarded by stronger d-pi interaction, while complexes 2 and 3, which exhibit the strongest d-pi interaction showed significantly lower reactivity toward O(2) under the same experimental conditions. Thus, the d-pi interaction has been demonstrated for the first time to affect the copper(I)-dioxygen reactivity, and represents a new aspect of ligand effects in copper(I)-dioxygen chemistry.