Influence of the structure parameters on the gain and noise figure in silicon parametric amplifiers based on SOI Rib waveguides

Gain and Noise figure (NF) characteristics in dual-pump parametric amplifier based on silicon on insulator (SOI) Rib waveguides are numerically investigated in the presence of nonlinear losses. The impact of structure parameters of the silicon optical parametric amplifiers (SOPAs) on the gain and the NF are also analyzed. The results show that both the height and the width of the silicon on insulator (SOI) can affect the gain and the NF of SOPAs. 354 nm bandwidth (3 dB) and 8.135 maximum gain can be achieved by tailoring the structure parameters of the SOI rib waveguides. Moreover, the dispersion and the effective mode area of SOI are also analyzed.     

Variable optical attenuator based on a vertical comb drive actuated MEMS micromirror

This letter presents the design, simulation, fabrication, and successful demonstration of a variable optical attenuator (VOA) based on a micromachined micromirror combined with an optical fiber collimator. The micromirror has a size of 500 μm in diameter and a rotational resonance of 4.94 kHz. The micromirror was actuated by vertical comb drive which was fabricated by bulk micromachining process on a silicon on insulator (SOI) wafer. The VOA operates at a low driving voltage of 4.4 V corresponding to the rotation angle of 0.3°. The turn-on and turn-off response time of the VOA are 1.6 ms and 2.74 ms, respectively. Finally, the optical attenuation was measured and an optical attenuation as large as 40 dB was obtained.     

BPM Simulation and Comparison of 1 × 2 Directional Waveguide Coupling and Y-Junction Coupling Silicon-on-Insulator Optical Couplers

For developing large area opto-electronic silicon-on-insulator (SOI) devices, the optical coupler is a basic key device. In this article, the authors design and simulate 1 2 2 directional waveguide coupling and Y-branch coupling optical couplers based on Unibond SOI rib waveguides. The beam propagation method (BPM) is used for light propagation analysis. The simulation results and comparisons of the two kinds of optical couplers are reported. The S-bend waveguide for attaching to the two kinds of SOI optical coupler is also analyzed by BPM. We find that the directional coupler has lower power loss, but the Y-junction coupler is more wavelength insensitive with the same device size and splitting angle. The fabrication tolerance analysis shows Y-junction coupler has better fabrication characteristics.     

Optical signal processing using four wave mixing in highly nonlinear silicon nano-wire

Silicon-on-insulator (SOI) waveguide devices are emerging for the realization of optical signal processing systems for the last couple of years. The recent technological advancement in silicon photonics is the main driving force at the back of these devices. Using non-linear optical phenomenon in silicon wires and their compatibility with CMOS devices provide the stage for integrated photonic devices. All-optical signal processing devices are being investigated at present, but the chip-scale solution provided by the silicon photonics is the most promising. In this research we have investigated all-optical signal processing in a 10 mm long SOI waveguide by exploiting well established coupled wave equations. We consider single pulsed pump to analyze frequency shifting by four-wave-mixing (FWM). For the wavelengths 20?30 nm far from the pump, the gain overcomes nonlinear losses resulting in higher frequency conversion efficiency.     

Characterization of GaN layers grown on silicon-on-insulator substrates

In this study, we report growth and characterization of GaN layers on (1 0 0)- and (1 1 1)-oriented silicon-on-insulator (SOI) substrates. Using metalorganic chemical vapor deposition (MOCVD) technique, GaN layers are grown on KOH treated Si (1 0 0) overlayers of thin SIMOX SOI substrates. Growth of GaN on such surface with an AlN buffer leads to c-axis orientated textured GaN. This is evident from high-resolution X-ray diffraction (HRXRD) measurement, which shows a much broader rocking curve linewidth. Significantly enhanced photoluminescence (PL) intensity and partial stress relaxation is observed in GaN layers grown on these SOI substrates. Furthermore, GaN grown on (1 1 1)-oriented bonded SOI substrates shows good surface morphology and improved optical quality. Micro-Raman, micro-PL, and HRXRD measurements reveal single crystalline hexagonal GaN oriented along (0 0 0 1) direction. We also report growth and characterization of InGaN/GaN multi-quantum well structures on (1 1 1)-oriented bonded SOI. Such an approach to realize nitride epilayers would be useful to fabricate GaN-based micro-opto-electromechanical systems (MOEMS) and sensors.     

Integrity of functional self-assembled monolayers on hydrogen-terminated silicon-on-insulator wafers

Silicon-on-insulator (SOI) wafers are commonly used to design microelectronics, energy conversion, and sensing devices. Thin solid films on the surfaces of SOI wafers have been a subject of numerous studies. However, SOI wafers modified by self-assembled monolayers (SAMs) that can also be used as functional device platforms have been investigated to a much lesser extent. In the present work, tert-butoxycarbonyl (t-boc, (CH₃)₃-C-O-C(O)-)-protected 1-amino-10-undecene monolayers were covalently attached to a H-terminated SOI (1 0 0) surface. The modified wafers were characterized by X-ray photoelectron spectroscopy to confirm the stability of the SAM/Si interface and the integrity of the secondary amine in the SAM. The transmission electron microscopy investigation suggested that this t-boc-protected 1-amino-10-undecene SAM produces atomically flat interface with the 2 μm single crystalline silicon of the SOI wafer, that the SiO_x and both available Si/SiO_x interfaces are preserved, and that the organic monolayers are stable, with apparent thickness of 1.7 nm, which is consistent with the result of the density functional theory modeling of the molecular features within a SAM.     

基于SOI工艺的扭转式微机械扫描光栅设计及制作

为实现微型光谱仪在工程领域的广泛应用,研究了其核心器件扭转式微机械扫描光栅的结构与制作方法。利用SOI工艺,设计一种无需启动电极的静电梳齿驱动结构,可以使扭转式微机械扫描光栅具有低频驱动、制作工艺简单、扫描范围广等优点。通过设计的制作工艺方法,研制出了能够初步满足性能要求的扭转式微机械扫描光栅样件。测试结果表明:该微扫描光栅在驱动电压为25 V时最大转角可达到4.8,对应的光学扫描角为19.2。     

A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer

A novel structure is proposed for doubling the vertical breakdown voltage of silicon-on-insulator(SOI) devices. In this new structure, the conventional buried oxide(BOX) in an SOI device is split into two sections: the source-section BOX and the drain-section BOX. A highly-doped Si layer, referred to as a non-depletion potential-clamped layer(NPCL), is positioned under and close to the two BOX sections. In the split BOXes and the Si region above the BOXes, the blocking voltage(BV) is divided into two parts by the NPCL. The voltage in the NPCL is clamped to be nearly half of the drain voltage. When the drain voltage approaches a breakdown value, the voltage sustained by the source-section BOX and the Si region under the source are nearly the same as the voltage sustained by the drain-section BOX and the Si region under the drain. The vertical BV is therefore almost doubled. The effectiveness of this new structure was verified for a P-channel SOI lateral double-diffused metal-oxide semiconductor(LDMOS) and can be applied to other high-voltage SOI devices. The simulation results show that the BV in an NPCL P-channel SOI LDMOS is improved by 55% and the specific on-resistance(Ron,sp) is reduced by 69% in comparison to the conventional structure.     

Shearograms of an optical phase singularity

Shearograms are known to represent phase gradients but when vortices are present in the optical field, these do not represent true phase gradients. Phase gradients of an optical phase singularity are presented. A lateral shear interferometer is used for obtaining shearograms of optical fields with vortices. A diffractive phase element is used to generate vortices. It is shown that shearograms can be used in the detection of optical vortices. Shearogram of speckle field is also presented.     

Spectrum reshaping of amplified pulse in silicon nanowaveguide

A device consisting of a cascaded semiconductor optical amplifier (SOA) and silicon on insulator (SOI) optical waveguide is presented to amplify and reshape the frequency spectrum of optical pulses in the picoseconds time duration. Numerical simulations show that the output spectrum of the amplified pulse by SOA can be effectively reshaped by utilizing the SOI waveguide. The length of the SOI waveguide may be judiciously adjusted to significantly reduce the frequency chirp of the output pulse from the SOA resulting in reshaping of the output spectrum. We find that the property of pulse spectrum is sensitive to the input pulse power and its temporal width.     

Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal–oxide–semiconductor field-effect transistor with low on-state resistance

An analytical model for a novel triple reduced surface field(RESURF) silicon-on-insulator(SOI) lateral doublediffused metal–oxide–semiconductor(LDMOS) field effect transistor with n-type top(N-top) layer, which can obtain a low on-state resistance, is proposed in this paper. The analytical model for surface potential and electric field distributions of the novel triple RESURF SOI LDMOS is presented by solving the two-dimensional(2D) Poisson's equation, which can also be applied to single, double and conventional triple RESURF SOI structures. The breakdown voltage(BV) is formulized to quantify the breakdown characteristic. Besides, the optimal integrated charge of N-top layer(Q_(ntop)) is derived, which can give guidance for doping the N-top layer. All the analytical results are well verified by numerical simulation results,showing the validity of the presented model. Hence, the proposed model can be a good tool for the device designers to provide accurate first-order design schemes and physical insights into the high voltage triple RESURF SOI device with N-top layer.     

硅键合SOI平面光波导探索

本文分析了ＳＩＭＯＸ／ＳＯＩ和ＤＷＢ／ＳＯＩ结构的性能特点。尝试用ＤＷＢ／ＳＯＩ材料制备不同波导层厚度的平面光波导样品，并测试了１．１５μｍ和１．５２３μｍ激光的ＴＥ和ＴＭ模的传输损耗。１．５２３μｍ光的ＴＥ模的最小传输损耗已达０．２７ｄＢ／ｃｍ。说明ＤＷＢ／ＳＯＩ材料是一种有潜力的光波导材料。     

Phase singularities and coherence vortices in linear optical systems

It is demonstrated for a time-invariant linear optical system that there exists a definite connection between the optical vortices (phase singularities of the field amplitude) which appear when it is illuminated by spatially coherent light and the coherence vortices (phase singularities of the field correlation function) which appear when it is illuminated by partially coherent light. Optical vortices are shown to evolve into coherence vortices when the state of coherence of the field is decreased. Examples of the connection are given. Furthermore, the generic behavior of coherence vortices in linear optical systems is described.     

Composite optical vortices in two noncollinear cosh-Gaussian vortex beams and their propagation properties in free space

The composite optical vortices (OVs) formed by superimposing two parallel, noncollinear cosh-Gaussian (ChG) vortex beams at the waist plane and their propagation in free space are studied. The dependence of the number, position and net topological charge of composite OVs on the control parameter, such as the relative phase, amplitude ratio, waist-width ratio, relative off-axis distance and decentered parameter, and on the propagation distance is illustrated numerically. A comparison with the previous work is also made.     

TRANSIENT OPTICAL VORTICES IN THE PROCESS OF PATTERN FORMATION IN A KERR SLICE SYSTEM WITH SINGLE FEEDBACK

The transient process of the optical pattern formation in a Kerr medium is numerically studied. We find that the process is accompanied by transient optical vortices in the far field. The temporal evolutions of the appearance and disappearance of the vortices are presented. All vortices will vanish when the system approaches its steady state. The number of vortices versus time is given.     

Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors

Silicon germanium(SiGe) heterojunction bipolar transistor(HBT) on thin silicon-on-insulator(SOI) has recently been demonstrated and integrated into the latest SOI BiCMOS technology.The Early effect of the SOI SiGe HBT is analysed considering vertical and horizontal collector depletion,which is different from that of a bulk counterpart.A new compact formula of the Early voltage is presented and validated by an ISE TCAD simulation.The Early voltage shows a kink with the increase of the reverse base-collector bias.Large differences are observed between SOI devices and their bulk counterparts.The presented Early effect model can be employed for a fast evaluation of the Early voltage and is useful to the design,the simulation and the fabrication of high performance SOI SiGe devices and circuits.     

结构参数对串联微环谐振腔编解码器性能的影响

光码分多址系统中, 光编解码器是影响系统性能的关键因素之一.自相关峰值旁瓣比(P/W)、自互相关峰值比(P/C)是衡量编解码器性能的两个重要指标.以硅基SOI微环谐振腔为载体, 提出了一种串联三环阵列的二维相干OCDMA编解码器模型.详细研究了耦合系数、损耗系数、阵列间距以及通道间隔对微环谐振腔编解码器性能的影响.结果表明, 半径为50 μm的微环, 环与直波导间耦合系数在0.6–0.7之间, 环与环间耦合系数在0.1–0.2之间, 损耗系数 < 2 dB/cm, 阵列间距大于3 mm, 通道间隔在25–36 GHz间时, 编解码器能够获得良好的性能.     

High-index contrast grating based broadband out-coupler on SOI

An efficient broadband out-coupler on silicon-on-insulator (SOI) with high-index contrast grating (HCG) is proposed. The presence of a silicon-air (high-index contrast) grating on the top silicon layer in SOI allows a strong interaction between the guided mode and the grating. The broadband design of the out-coupler is presented by optimising the various grating parameters. The design analysis and simulation of such an out-coupler is performed with finite difference method. Coupling efficiency of 54% is achieved over an ultra-wide wavelength range from 1500 nm to 1650 nm.     

Experiments with twisted light

The generic – that is, stable under perturbations – nodes of the field in a monochromatic light beam are optical vortices. We describe here their connection to Chladni's nodal lines in the oscillations of metal plates, as well as a few experiments that have been performed with optical vortices. We will describe how optical vortices can be generated experimentally; how it can be shown that they possess orbital angular momentum; how individual photons can be sorted according to their vortex state; and how optical vortices can be used to demonstrate higher-dimensional quantum entanglement.     

离轴平顶高斯涡旋光束形成的合成光涡旋及其在自由空间中的传输

对两束拓扑电荷m_1,2=±1的平行、离轴平顶高斯涡旋光束在束腰面叠加形成的合成光涡旋及其在自由空间的传输做了研究.详细的数值计算和分析表明,合光涡旋的位置、数目和净拓扑电荷与光束的控制参数,包括相对位相,振幅比,束腰宽度比,相对离轴参数,光束阶数,以及传输距离有关,但拓扑电荷不总是守恒. 关键词： 奇点光学 合成光涡旋 平顶高斯涡旋光束 拓扑电荷