光学微盘腔与三能级量子点系统中的模耦合研究

用一种全量子理论方法研究了波导、光学微盘腔与三能级量子点耦合系统的动力学过程,求出其耦合后的透射模和反射模的解析解. 由于微腔表面粗糙引起反向散射,在微腔内形成两简并回音壁耦合共振模,其耦合率为β;量子点的两激发态分别以耦合率g₁,g₂与回音壁耦合共振模产生耦合. 在实数空间里,得出透射光谱和反射光谱的数值解,这些三能级模型结果比二能级模型结果更接近真实光学微盘腔系统,能更好地显示耦合系统的动力学特性. 关键词： 模耦合 光学微盘腔 三能级量子点 全量子理论     

Coupling effects in a photonic crystal microcavity with embedded semiconductor quantum dot

The present work investigates the effects of relevant parameters of InAs/GaAs quantum dot and photonic crystal slab-based microcavity on the QD–cavity coupling characteristics, in detail. We employ variational approach to find exciton state in QD and to find cavity modes we use the open source GME code. Calculations have performed in linear regime where excitons behave as bosons which correspond to the limit of low excitation. The dynamics of the system are studied using the first order correlation function (G⁽¹⁾(t,τ)). We will show how G⁽¹⁾ varies with time in both strong and weak coupling regimes. Our results indicate that the achieving of strong coupling regime is affected by the size of the quantum dot and how to engineer the photonic crystal microcavity to maximize the ratio of quality factor and mode volume.     

Another model for a multiexcitonic quantum dot in an optical microcavity

Very recently, a multiexcitonic quantum dot in an optical microcavity have been theoretically studied [Herbert Vincka, Boris A. Rodriguez, and Augusto Gonzalez, Physica E, 2006, 35: 99–102]. However, due to the inevitable damping losses through the microcavity, in this work, we will present a more precise and sound model in the Lindblad form master equation to investigate the photonic properties of a single quantum dot (QD) in an optical microcavity system, in which the QD may confine the multiexcitons and be in resonant interaction with a single photonic mode of an optical microcavity. The excitation energies, and the properties of the emission photon from the QD microcavity are computed as functions of the exciton-photon coupling strength, detuning, and pump rate. We further compare our results with their results, and find that the calculated intensity of the emitted photon and the spectra crucially depend on the exciton-photon coupling strength g, the photon detuning, and the number of excitons in the QD. Finally, we will give a physical mechanism of the dressed-state picture for the strong coupling between the single mode of an optical microcavity and the QD emitters to explain the details of the emission photon spectra. Our study establishes useful guidelines for the experimental study of such multiexcitonic quantum dot in an optical microcavity system.      

Collective coupling of randomly dispersed oscillators with cavities filled with zero-index metamaterials

In cavity quantum electrodynamics, it is hard to enhance the coupling strength between quantum dot (QD) and cavity, owing to the limited choice of QDs and the positional uncertainty brought by the inhomogeneous cavity fields. In this paper, we randomly distribute N oscillators with oscillating strength G = G ₀ into a cavity filled with a zero-index metamaterial (ZIM). Because of the enhanced uniform fields, each oscillator couples to the field maximum and the N oscillators are equivalent to one oscillator with effective N G ₀. This provides a way to enhance the coupling strength just by adding the number of QDs. Both simulation and experiment demonstrate the adjustable coupling strength in ZIM-filled cavities.     

Influence of a single quantum dot state on the characteristics of a microdisk laser

We report a quantum dot microcavity laser with a cw sub-microW lasing threshold, where a significant reduction of the lasing threshold is observed when a single quantum dot (QD) state is aligned with a cavity mode. The quality factor exceeds 15,000 before the system lases. When no QD states are resonant, below threshold the cavity mode initially degrades with increasing pump power, after which saturation occurs and then the cavity mode recovers. We associate the initial cavity mode spoiling with QD state broadening that occurs with increasing pump power.     

Coherent photonic coupling of semiconductor quantum dots

We report a new type of coupling between quantum dot excitons mediated by the strong single-photon field in a high-finesse micropillar cavity. Coherent exciton coupling is observed for two dots with energy differences of the order of the exciton-photon coupling. The coherent coupling mode is characterized by an anticrossing with a particularly large line splitting of 250 microeV. Because of the different dispersion relations with temperature, the simultaneous photonic coupling of quantum dot excitons can be easily distinguished from cases of sequential strong coupling of two quantum dots.     

Magneto optics of single photons emitted from single InAs/GaAs self-assembled quantum dots in a planar microcavity

We fully characterize the fine spectral structure of neutral and negatively charged single microcavity quantum dot excitons, using polarization-sensitive magneto-photoluminescence spectroscopy. We show that the microcavity allows the simultaneous detection of both the bright and dark excitons using Faraday configuration. Thus, we were able to fully determine the fine structure and the g-factors of the neutral and negatively charged single exciton states within the same single quantum dot. Our measurements are in excellent agreement with novel, many carrier model calculations, which take into account Coulomb and exchange interactions among all the confined e–h pair states.     

偶极子位置及偏振对激发光子晶体H1微腔的影响

光子晶体微腔和量子点的集成是实现量子信息处理非常具有潜力的平台之一,利用微腔和量子点的耦合可以制备纠缠光子对,实现对量子态的操控.因为光子晶体微腔具有品质因子高、模场体积小等优点,可以极大地增强光与物质之间的相互作用,从而易于实现量子态在不同物理体系之间的转换.通过单量子点和光子晶体H1微腔的耦合可以产生纠缠光子对,因为H1微腔具有简并的、模式偏振正交的基态模式.通常微腔模式的激发随着量子点在微腔中的位置变化而改变,本文用时域有限差分方法研究了偶极子光源的位置及偏振对激发光子晶体H1微腔模式的影响.结果表明:通过改变偶极子光源位置可以选择性地激发H1微腔简并模式中的一个;具有某一偏振的偶极子光源只能激发相应偏振的微腔模式;模式激发强度的大小也是由偶极子光源在微腔中的位置决定的.鉴于目前量子点在微腔中的位置尚不能精确控制,所以微腔模式受激发光源位置的影响的研究具有重要意义.     

Cavity QED effects with single quantum dots

A single quantum dot embedded in a photonic crystal defect cavity allows for the investigation of cavity quantum electrodynamics effects in a solid-state environment. We present experiments demonstrating the quantum nature of this fundamental system in the strong coupling regime. Photon correlation measurements are used to characterize the fundamental properties of this unique system: through these experiments, we identify an unexpected, efficient sustaining mechanism that ensures strong cavity emission and is quantum correlated with the exciton resonance, even when all the quantum dot resonances are far detuned from the cavity mode. To cite this article: A. Badolato et al., C. R. Physique 9 (2008).     

Excitons and Biexcitons in Spheroidal Quantum Dots A<Subscript>2</Subscript>B<Subscript>6</Subscript>

In the limit of strong quantum confinement the lower energy states of excitons and biexcitons in spheroidal quantum dots of semiconductors with a fourfold degenerate vertex of the valence band, which are active in the dipole approximation at one- and two-photon excitation, have been considered. The comparative analysis of the order of energy levels of the hole in the potentials of the infinitely deep quantum well and a three-dimensional harmonic oscillator taking into account the axial anisotropy of the quantum dot (QD) shape is carried out. It is shown that the anisotropy of the QD shape can lead to the opposite sign of splitting with respect to angular momentum projection ±3/2, ±1/2 for spatially odd (1P_3/2) and even (1S_3/2) levels of the hole. At the same time, in the case of the potential of an infinitely deep quantum well, an inversion of the order of 1S_3/2 and 1P_3/2 levels can be observed at values of the ratio of the effective masses of the light and heavy holes β = m_lh/m_hh ≈ 0.14. The type of the trial wave functions of the hole for the state 1P_3/2 in the potential of an isotropic three-dimensional harmonic oscillator depending on β is proposed. The dependence of the binding energy of excitons in the considered potentials on β is presented and the possibility of formation of various biexcitonic states is considered.     

Universal transport properties of a quantum dot system with a laterally-coupled Majorana zero mode

We present a comprehensive analysis about the transport properties of a quantum dot (QD) system with a side-coupled Majorana zero mode. Our calculation result shows that when the coupling manners between the two leads and QDs are identical, the local Andreev reflection and the interlead normal tunneling have the same magnitude at the zero-bias limit. Accordingly, the zero-bias conductance value is always equal to e²/2h, which is exactly one half of the resonant-tunneling conductance. This result is independent of the level number and the level distribution in the single-QD case, and in the coupled-QD case it is irrelevant to the geometry of the QD molecule. The universal transport property is a powerful evidence for the feasibility to detect the MBSs based on a QD circuit. This result also means that the QD condition is not a key factor to achieve the detection. On the other hand, if the decoupling phenomenon appears, the Majorana zero mode may play a trivial role in contributing to the conductance property.     

Controllable four-wave mixing based on quantum dot-cavity coupling system

We theoretically study the four-wave mixing(FWM) response in a quantum dot-cavity coupling system, where a two-level quantum dot(QD) is placed in an optical cavity while the cavity mode is coupled to the nanomechanical resonator via radiation pressure. The influences of the QD-cavity coupling strength, the Rabi coupling strength of the QD, and the power of the pump light on the FWM intensity are mainly considered. The numerical results show that the FWM intensity in this hybrid system can be significantly enhanced by increasing the QD-cavity coupling strength. In addition, the FWM intensity can be effectively modulated by the Rabi coupling strength and the pump power. Furthermore, the effects of the cavity decay rate and the cavitypump detuning on the FWM signal are also explored. The obtained results may have potential applications in the fields of quantum optics and quantum information science.     

Fine structure of excitons in self-assembled In0.60Ga0.40As quantum dots: Zeeman-interaction and exchange energy enhancement

The fine structure of the ground state exciton has been studied by magnetophotoluminescence spectroscopy of self-assembled In_0.60Ga_0.40As single quantum dots. This was realized by using lithography for fabricating mesa structures which contain only a single dot. Due to a dot geometry-induced symmetry breaking we are able to observe the dark exciton states in magnetic field besides the bright excitons. From the spin-splitting data values for the corresponding exciton g-factors are obtained. In addition, the electron–hole exchange energies are determined, which are compared to detailed numerical calculations.     

The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa1−xN spherical quantum dot

Within the framework of effective mass approximation, the binding energy of a hydrogenic donor impurity in zinc-blende GaN/Al_xGa_1−xN spherical quantum dot (QD) is investigated using the plane wave basis. The results show that the binding energy is highly dependent on impurity position, QD size, Al content and external field. The binding energy is largest when the donor impurity is located at the centre of the QD and the binding energy of impurity is degenerate for symmetrical positions with respect to the centre of QD without the external electric field. The maximum of the donor binding energy is shifted from the centre of QD and the degenerating energy levels for symmetrical positions with respect to the centre of QD are split in the presence of the external electric field. The binding energy is more sensitive to the external electric field for the larger QD and lower Al content. In addition, the Stark shift of the binding energy is also calculated.     

InAs quantum dot field effect transistors

We have studied single electron and hole storage in self-assembled InAs quantum dots (QDs) embedded in GaAs/n-AlGaAs field effect transistors (QD-FETs). We prepared two types of QD-FETs. A single electron and a photo-generated single hole can be stored in each QD in Type 1. In the new Type II, single-electron discharge processes can be controlled by a surface gate voltage (V_g) as well as single-electron storage processes. We demonstrate possible application to novel photo devices and quantum dot memory devices.     

Theoretical study of the optical absorption and refraction index change in a cylindrical quantum dot

Analytical expressions of the optical absorption coefficient and the change in refractive index associated with intraband relaxation in a cylindrical quantum dot are obtained by using the density matrix formalism. Energy levels in conduction band were calculated with finite confining potential in the framework of the effective-mass envelope-function theory. Numerical calculations on a typical GaAs/AlβGa1−βAs QD are performed. It is found that the absorption and refraction index change sensitively depend not only on the incident optical wave but also on the dot size and the Al mole fraction β in the AlβGa1−βAs material.     

Optomechanical dynamics in detuned whispering-gallery modes cavity

The dynamics of a microresonator in detuned whispering-gallery modes (WGM) cavity opto-mechanical system are investigated by the quantum Langevin equation. A WGM cavity coupling to two parallel waveguides is devised to study the transmission and reflection of this system. In single mode WGM cavity, without optomechanical coupling, both the transmission and reflection of the cavity present a Lorentzian dip and peak. When the coupling between the cavity mode and mechanical mode is considered, the transmission and reflection of the optomechanical cavity show “W” and “M” shape mode splitting. Moreover, under the action of a controlling and a probe laser, the output field at the probe frequency presents electromagnetically induced transparency (EIT)-like spectrum in the system. We give the physical origin of EIT-like and the pump-probe response for the WGM shares all the features of the Λ system in atoms. Further, due to backscattering, the two traveling waves in WGM are coupled with a rate γ. The transmission and reflection of the optomechanical cavity display three modes splitting in the spectra with optomechanical coupling between the two cavity modes and the mechanical mode.     

Thermoelectric transport properties through a T-shaped single quantum dot

We study the thermopower, thermal conductance, electric conductance and the thermoelectric figure of merit for a gate-defined T-shaped single quantum dot (QD). The QD is solved in the limit of strong Coulombian repulsion U→∞, inside the dot, and the quantum wire is modeled on a tight-binding linear chain. We employ the X-boson approach for the Anderson impurity model to describe the localized level within the quantum dot. Our results are in qualitative agreement with recent experimental reports and other theoretical researches for the case of a quantum dot embedded into a conduction channel, employing analogies between the two systems. The results for the thermopower sign as a function of the gate voltage (associated with the quantum dot energy) are in agreement with a recent experimental result obtained for a suspended quantum dot. The thermoelectric figure of merit times temperature results indicates that, at low temperatures and in the crossover between the intermediate valence and Kondo regimes, the system might have practical applicability in the development of thermoelectric devices.     

量子点单光子源的光纤耦合

半导体量子点在低温下产生谱线细锐的激子发光可制备单光子源.光纤耦合可避免低温共聚焦装置扫描定位和振动影响,是实现单光子源即插即用和组件化的关键技术.在耦合工艺上,基于微区定位标记发展出拉锥光纤与光子晶体腔或波导侧向耦合、大数值孔径锥形端面光纤与量子点样片垂直耦合等技术;然而,上述工艺需要多维度精密调节以避免柔软光纤的畸形弯曲实现对准和高效耦合.陶瓷插针或石英V槽封装的光纤无弯曲且具有大平滑端面,只要与单量子点样片对准贴合就可保证垂直收光, V槽封装的排式光纤还可通过盲对粘合避免扫描对准,耦合简单.本文在前期排式光纤粘合少对数分布Bragg反射镜(distributed Bragg reflector, DBR)微柱样片实现单光子输出基础上,经理论模拟采用多对数DBR腔提升样片垂直出光和光纤收光效率,使光纤输出单光子计数率大大提升.     

The role of interdiffusion and spatial confinement in the formation of resonant raman spectra of Ge/Si(100) heterostructures with quantum-dot arrays

The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy. It is revealed that the Ge-Ge and Si-Ge vibrational modes are considerably enhanced upon excitation of excitons between the valence band Λ₃ and the conduction band Λ₁ (the E ₁ and E ₁ + Δ₁ transitions). This makes it possible to observe the Raman spectrum of very small amounts of germanium, such as one layer of quantum dots with a germanium layer thickness of ≈10 Å. The enhancement of these modes suggests a strong electron-phonon interaction of the vibrational modes with the E ₁ and E ₁ + Δ₁ excitons in the quantum dot. It is demonstrated that the frequency of the Ge-Ge mode decreases by 10 cm^?1 with a decrease in the thickness of the Ge layer from 10 to 6 Å due to the spatial-confinement effect. The optimum thickness of the Ge layer for which the size dispersion of quantum dots is minimum is determined.