Photoluminescence and optical transmission of diamond and its imitators

Photoluminescence and optical transmission spectra of several samples of natural and synthetic diamond and its imitators - fianite and corundum - are investigated. The band-A of luminescence at 440 nm, the vibronic N3 system of luminescence and absorption at 415.2 nm, the fundamental absorption edge at 225 nm, and the secondary absorption below 308 nm are the main identifying markers of natural diamonds. For synthetic diamonds, however, such identifying markers are the free-exciton luminescence at 235 nm, the band-A, and the fundamental absorption edge. Fianites can be identified by the structureless wideband at 500 nm and the wide transmission band in the entire visible range. Colored corundum samples with chrome impurities emit the narrow line at 693 nm and show the absorption band in the 500-600 nm spectral range. A new method for diamond express identification is developed on the basis of measurement of photoluminescence and optical transmission spectra of the samples. It is shown that a diamond tester can be designed combining a spectrometer and a KrCl-excilamp radiating at 222 nm.     

Measurement of nonlinear absorption coefficients in GaAs, InP and Si by an optical pump THz probe technique

An optical pump terahertz (THz) probe method for measuring carrier mobility and multiphoton absorption coefficients in semiconductors is demonstrated. A THz probe pulse is used to detect the transient photoconductivity generated by an optical pump pulse. The change in transmission coefficient at THz frequencies due to a pump pulse with photon energy greater than the band gap energy is used to determine the sum of electron and hole mobilities. The weak nonlinear absorption of a pump pulse with photon energy less than the band gap energy produces an approximately uniform free carrier distribution. The THz transmission coefficient vs. pump fluence, and the mobility, are used in a bulk photoconductivity model to determine the multiphoton absorption coefficients. For GaAs, InP and Si we find two photon absorption coefficients at 1305 nm of 42.5 ± 11, 70 ± 18 and 3.3 ± 0.9 cm/GW, respectively. For GaAs and InP we determine three photon absorption coefficients at 2144 nm of 0.19 ± 0.07 and 0.22 ± 0.08 cm³/GW².     

Double groove silicon grating polarizer in telecommunication wavelength band

In this paper, we propose an ultra broad band polarizer operating in the telecommunication wavelength band, this device consisting a double groove silicon grating is designed with using the inverse mathematical method and rigorous vector diffraction theory. It is shown from our calculations that the device presents extremely high reflection (R > 95%) for TE polarization light and high transmission (T > 95%) for TM polarization over ∼400 nm wavelength range, moreover, the extinction ratio is ∼30 in the central wavelength 1550 nm. Furthermore, it is found with rigorous coupled wave analysis (RCWA) that the extremely wide band property for TE polarization is due to the excitation of strong modulation guided modes in the design wavelength range.     

Terahertz wave narrow bandpass filter based on photonic crystal

We designed a narrow bandpass terahertz wave filter using photonic crystals with a line defect. An inserted linear defect in one-dimensional photonic crystal structures for a channeled filtering in the terahertz range are studied and designed theoretically. By using transfer matrix method, we examined the transmittance spectra for the proposed terahertz wave filter has a 3 dB transmission loss bandwidth of 20 MHz ranging from 0.29998 THz to 0.30001 THz. The simulated results show that a very narrow transmission band and high transmission (higher than 99.99%) centered at λ₀, and very sharp edges can be achieved.     

Reverberation times and speech transmission indices in classrooms

Octave band reverberation times, background noise levels and speech transmission indices measurements were carried out in eighteen government subsidized primary and secondary schools in Hong Kong. Various normal classroom operation conditions were considered. Results illustrate that strong correlation exists between the reverberation times and the speech transmission indices regardless of the background noise levels and their NC values in the present study. The arithmetic average of the reverberation times in the 250 Hz to 4 Hz octave bands and the 1 kHz octave band reverberation time are found to be more important in the correlation in general. These findings provide a convenient mean for speech transmission design in classrooms.     

Broadband dispersion compensation of conventional single mode fibers using microstructure optical fibers

This paper presents a microstructure optical fiber for dispersion compensation in a wide range of wavelengths. The finite-element method with perfectly matched absorbing layers boundary condition is used to investigate the guiding properties. The designed novel dispersion compensating fiber shows that it is possible to obtain a larger negative dispersion coefficient of about −130 to −360 ps/(nm km), better dispersion slope compensation, better compensation ratio, and lower confinement losses less than 10⁻² dB/km in the entire telecommunication (1400–1600 nm) band by using a modest number of design parameters and very simple cladding design.     

Optical band gap of zinc nitride films prepared on quartz substrates from a zinc nitride target by reactive rf magnetron sputtering

Polycrystalline zinc nitride films have been synthesized onto quartz substrates from the zinc nitride target and the nitrogen working gas by reactive rf magnetron sputtering at room temperature. X-ray diffraction study indicates that polycrystalline zinc nitride films are of cubic structure with the lattice constant a = 0.979(1) nm and have preferred orientations with (3 2 1) and (4 4 2). Its absorption coefficients as well as the film thickness are calculated from the transmission spectra, which are measured with a double beam spectrophotometer. The optical band gap has been determined from the photon energy dependence of absorption coefficient, an indirect transition optical band gap of 2.12(3) eV has been obtained.     

Simple and flexible generation of vestigial side band modified duobinary return-to-zero signals at 10, 20 and 40 Gb/s

We propose and demonstrate a simple and flexible approach to generate vestigial side band modified duobinary return-to-zero (VSB MD-RZ) signals at 10-40 Gb/s, using a dual-drive Mach-Zehnder modulator and a detuned optical band-pass filter. The performance of the proposed VSB MD-RZ signal is investigated by comparing with double side band MD-RZ (DSB MD-RZ) and conventional VSB MD-RZ. Bit error ratio (BER) measurement at 10 Gb/s shows an error free operation for the generated signal. Good performance is further observed after 100 km of single-mode-fiber transmission at 40 Gb/s.     

Absorption edge and optical constants of Tl2Ga2S3Se crystals from reflection and transmission,and ellipsometric measurements

The optical properties of Tl₂Ga₂S₃Se layered crystalline semiconductors were investigated from transmission, reflection and ellipsometric measurements. The experimental results of the room temperature transmission and reflection measurements performed in the wavelength range of 400–1100 nm showed the presence of both indirect and direct transitions in the band structure of the crystals with 2.38 and 2.62 eV band gap energies.     

Boron doped ZnO thin films fabricated by RF-magnetron sputtering

By using the radio frequency-magnetron sputtering (RF-MS) method, both pure ZnO and boron doped ZnO (ZnO:B) thin films were deposited on glass substrates at ambient temperature and then annealed at 450 °C for 2 h in air. It is found that both ZnO and ZnO:B thin films have wurtzite structure of ZnO with (0 0 2) preferred orientation and high average optical transmission (≥80%). Compared with the resistivity of 6.3 × 10² Ω cm for ZnO film, both as-deposited and annealed ZnO:B films exhibit much lower resistivity of 9.2 × 10⁻³ Ω cm and 7.5 × 10⁻³ Ω cm, respectively, due to increase in the carrier concentration. Furthermore, the optical band gaps of 3.38 eV and 3.42 eV for as-deposited and annealed ZnO:B films are broader than that of 3.35 eV for ZnO film. The first-principles calculations show that in ZnO:B thin films not only the band gap becomes narrower but also the Fermi level shifts up into the conduction band with respect to the pure ZnO film. These are consistent with their lower resistivities and suggest that in the process of annealing some substituted B in the lattice change into interstitial B because of its smaller ion radius and this transformation widens the optical band gap of ZnO:B thin film.     

Microstructure holey fibers as wideband dispersion compensating media for high speed transmission system

This paper presents a dispersion compensating microstructure holey fiber for wideband transmission system. The finite element method with perfectly matched absorbing layers boundary condition is used to investigate the guiding properties. According to simulation, negative dispersion coefficient of −1455 ps/(nm km) and a relative dispersion slope (RDS) close to that of single mode fiber of about 0.0036 nm⁻¹ is obtained at 1.55 μm. The variation of structural parameters is also studied to evaluate the tolerance of the fabrication. The proposed module can be used in 40 Gb/s dense wavelength division multiplexing (DWDM) systems in optical fiber communication networks.     

A novel polarization splitter based on dual-core hybrid photonic crystal fibers

Highly birefringent dual-core photonic crystal fibers (PCFs) can be used as a polarization splitter because the orthogonal polarization modes with dissimilar coupling lengths are easily separated from each other. Different from the traditional methods achieving high birefringence, a new highly birefringent hybrid PCF that guides light by both index guiding and bandgap guiding is proposed. Firstly, a novel polarization splitter based on this kind of dual-core hybrid PCF is designed. The transmission modes, coupling lengths for the two orthogonal polarizations and performance of the proposed polarization splitter are investigated and numerically analyzed. The results demonstrate that it is possible to obtain a 4.72-mm-long polarization splitter. The splitting ratio is better than −20 dB in a large wavelength range of 1.53-1.72 μm. Its bandwidth is about 190 nm.     

Wide band polarizer with suspended silicon grating

In this paper, we propose an ultra broadband polarizer operating in the telecommunication wavelength band; this device consisting a single silicon suspended resonant grating layer is designed with using the inverse mathematical method and rigorous vector diffraction theory. It is shown from our calculations that the device presents extremely high reflection (R > 98%) for TE polarization light and high transmission (T > 98%) for TM polarization over ∼330 nm wavelength range; moreover, the extinction ratio is ∼100 in the central wavelength 1550 nm. Furthermore, it is found with Rigorous Coupled Wave Analysis (RCWA) and near field distribution that the extremely wide band property for TE polarization is due to the excitation of strong modulation guided modes in the design wavelength range.     

Structural and optical properties of nano-structured tungsten-doped ZnO thin films grown by pulsed laser deposition

Novel highly c-oriented tungsten-doped zinc oxide (WZO) thin films with 1 wt% were grown by pulsed laser deposition (PLD) technique on corning 1737F glass substrate. The effects of laser energy on the structural, morphological as well as optical transmission properties of the films were studied. The films were highly transparent with average transmittance exceeding 87% in the wavelength region lying between 400 and 2500 nm. X-ray diffraction analysis (XRD) results indicated that the WZO films had c-axis preferred orientation with wurtzite structure. Film thickness and the full width at half maximum (FWHM) of the (0 0 2) peaks of the films were found to be dependent on laser fluence. The composition determined through Rutherford backscattering spectroscopy (RBS) appeared to be independent of the laser fluence. By assuming a direct band gap transition, the band gap values of 3.36, 3.34 and 3.31 eV were obtained for corresponding laser fluence of 1, 1.7 and 2.7 J cm⁻², respectively. Compared with the reported undoped ZnO band gap value of 3.37 eV, it is conjectured that the observed low band gap values obtained in this study may be attributable to tungsten incorporation in the films as well as the increase in laser fluence. The high transparency makes the films useful as optical windows while the high band gap values support the idea that the films could be good candidates for optoelectronic applications.     

Low-temperature absorption edge and photoluminescence in layered structured Tl2Ga2S3Se single crystals

The absorption edge of undoped Tl₂Ga₂S₃Se crystals have been studied through transmission and reflection measurements in the wavelength range 440–1100 nm and in the temperature range 10–300 K. The absorption edge was observed to shift toward lower energy values with increasing temperature. As a result, the rate of the indirect band gap variation with temperature γ=−2.6×10⁻⁴ eV/K and the absolute zero value of the band gap energy E_gi(0)=2.42 eV were obtained.     

Investigation of helium implantation induced blistering in InP

 Four-inch InP wafers were implanted with 100 keV helium ions with a dose of 5×10¹⁶ cm⁻² and subsequently annealed in air in the temperature range of 225-400°C in order to determine the blistering kinetics of these wafers. An Arrhenius plot of the blistering time as a function of reciprocal temperature revealed two different activation energies for the formation of surface blisters in InP. The activation energy was found to be 0.30 eV in the higher temperature regime of 300-400 °C and 0.74 eV in the lower temperature regime of 225-300 °C. The implantation induced damage was analyzed by cross-sectional transmission electron microscopy, which revealed a band of defects extending from 400-700 nm from the surface of InP. The damage band was found to be decorated with a large number of nanovoids having diameters between 2 and 5 nm. These nanovoids served as precursors for the formation of microcracks inside InP upon annealing, which led to the formation of surface blisters.     

Raman spectroscopy of SWNTs produced by a XeCl excimer laser ablation at high temperatures

Synthesis of single-wall carbon nanotubes (SWNTs) was carried out by an ablation method using a XeCl excimer laser. It was irradiated onto a graphite target containing Co and Ni at the temperatures of 1073, 1173, 1273, 1373, 1473, 1523 and 1623 K under the atmosphere (0.1 MPa) of Ar gas with the flow rate of 12 ml/min. The measurement by a scanning/transmission electron microscope and Raman spectroscopy found the formation of SWNTs with the diameter of about 1.3 nm and the length of about 2 μm in ablated carbonaceous soot. The ratio of peak intensity of 1590 cm⁻¹ (G band) to that of 1335 cm⁻¹ (D band) in the high frequency Raman spectra increased with increasing the ambient temperature. The radial breathing mode (RBM) in the low frequency Raman spectra shows that the mean diameter of SWNTs increased with increasing the ambient temperature.     

Potential of the high modal bandwidth OM4 glass multimode fiber for the multi-services concept

In this paper, we report new results dealing with the wavelength multiplexing transmission scheme over the OM4 high modal bandwidth multimode fiber. Fiber bandwidth measurements both at 850 nm and 1300 nm clearly show the huge bandwidth/length product of this fiber. The simultaneous transmission of a high data rate baseband signal (10 GbE) at 850 nm and a radiofrequency MultiBand Orthogonal Frequency Division Multiplexing Ultra-Wide Band (band group 5-10 GHz) MB-OFDM UWB signal (480 Mbps) at 1300 nm is presented. The measurements - Bit Error Rate (BER) for the 10 GbE signal and Error Vector Magnitude (EVM) for the MB-OFDM UWB signal - that are hereby reported show safe results under the requirements of the corresponding communication standards; they give this architecture an affordable approach for home/office networking at high data rate in a joint fixed and wireless environment.     

Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films

Amorphous thin films of InGaZnO₄ (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism.     

Optical properties of ITO/TiO2 single and double layer thin films deposited by RPLAD

Indium tin oxide (ITO) and titanium dioxide (TiO₂) single layer and double layer ITO/TiO₂ films were prepared using reactive pulsed laser ablation deposition (RPLAD) with an ArF excimer laser for applications in dye-sensitized solar cells (DSSCs). The films were deposited on SiO₂ substrates either at room temperatures (RT) or heated to 200-400 °C. Under optimized conditions, transmission of ITO films in the visible (vis) range was above 89% for films produced at RT and 93% for the ones deposited at higher temperatures. Increasing the substrate temperature from RT to 400 °C enhances the transmission of TiO₂ films in the vis-NIR from about 70% to 92%. High transmission (≈90%) was observed for the double layer ITO/TiO₂ with a transmission cut-off above 900 nm. From the transmission data, the energies gaps (E_g), as well as the refractive indexes (n) for the films were estimated. n ≈ 2.03 and 2.04, respectively for ITO films and TiO₂ film deposited at 400 °C in the visible region. Post-annealing of the TiO₂ films for 3 h at 300 and 500 °C was performed to enhance n. The refractive index of the TiO₂ films increases with the post-annealing temperature. The direct band gap is 3.6, 3.74 and 3.82 eV for ITO films deposited at RT, 200, and 400 °C, respectively. The TiO₂ films present a direct band gap of 3.51 and 3.37 eV for as deposited TiO₂ films and when annealed at 400 °C, respectively. There is a shift of about 0.1 eV between ITO and ITO/TiO₂ films deposited at 200 °C. The shift decreases by half when the TiO₂ film was deposited at 400 °C. Post-annealing was also performed on double layer ITO/TiO₂.