A comparison of electronic structure and optical properties between N-doped β-Ga2O3 and N-Zn co-doped β-Ga2O3

The electronic structure and optical properties of N-doped β-Ga₂O₃ and N-Zn co-doped β-Ga₂O₃ are investigated by the first-principles calculation. In the N-Zn co-doped β-Ga₂O₃ system, the lattice parameters of a, b, c, V decrease and the formation energy of N-Zn co-doped β-Ga₂O₃ is smaller in comparison with N-doped β-Ga₂O₃. There are two shallower acceptor impurity levels in N-Zn co-doped β-Ga₂O₃. Comparing with N-doped β-Ga₂O₃, the major absorption peak is red-shifted and the impurity absorption edge is blue-shifted for N-Zn co-doped β-Ga₂O₃. The results show that the N-Zn co-doped β-Ga₂O₃ is found to be a better method to push p-type conductivity in β-Ga₂O₃.     

Electro-optic Q-switched intracavity optical parametric oscillator at 1.53 μm based on KTiOAsO4

An eye-safe, high peak power optical parameter oscillator (OPO) intracavity pumped by electro-optic Q-switched Nd:YAG laser is presented. This OPO is based on a 20 mm length KTiOAsO₄ crystal with non-critical phase matching (θ = 90°, ?=0°) cut. An aperture ∅3 mm acted as limiting diaphragm to get good beam quality of pumping laser. The output energy of 25 mJ at the signal wavelength 1.53 μm was obtained with repetition rate of 1 Hz. The highest peak power intensity was up to 88 MW/cm² with pulse width of 4 ns. Without diaphragm, the maximum output energy of 90 mJ was achieved with area of light spot (∅6 mm) four times larger, but the peak power intensity was lower.     

Compact and tunable mid-infrared source based on a 2 μm dual-wavelength KTiOPO4 intracavity optical parametric oscillator

Using a double resonant KTiOPO 4 (KTP) intracavity optical parametric oscillator operating at degenerated point of 2 μm,we demonstrate a unique mid-infrared source based on difference frequency generation in GaSe crystal.The output tuning range is 8.42-19.52 μm,and a peak power of 834 W for type-I phase matching scheme and 730 W for type-II phase matching scheme are achieved.Experimental results show that this oscillator is a good alternative to the generator of a compact and tabletop mid-infrared radiation with a widely tunable range.     

Mid-infrared optical parametric oscillator based on ZnGeP2 pumped by 2-μm laser

We present a 3 5 μ m optical parametric oscillator (OPO) based on ZGP pumped by KTP OPO 2.1-μ m laser. The tuning curves of ZGP OPO are calculated. The 8 ×6 ×18 (mm) ZGP crystal, whose end faces are antireflection coated at 2.1 and 3.7 4.6 μ m, is cut as θ =53.5°, φ =0°. When the pump power of 2.1-μ m polarized laser is 15 W at 8 kHz, 5.7-W output power and 46.6% slope efficiency are obtained with a ZGP type I phase match. Central wavelengths of the signal and idler lasers are 4.10 and 4.32 μ m, respectively. Pulse duration is about 27 ns. Beam quality factor M 2 is better than 1.8. The tunability of 3 5 μ m can be achieved by changing the angle of the ZGP crystal.     

Effects of N-doping concentration on the electronic structure and optical properties of N-doped β-Ga2O3

The electronic structures and the optical properties of N-doped β-Ga2O3 with different N-doping concentrations are studied using the first-principles method.We find that the N substituting O（1） atom is the most stable structure for the smallest formation energy.After N-doping,the charge density distribution significantly changes,and the acceptor impurity level is introduced above the valence band and intersects with the Fermi level.The impurity absorption edges appear to shift toward longer wavelengths with an increase in N-doping concentration.The complex refractive index shows metallic characteristics in the N-doped β-Ga2O3.     

Fabrication of chloroform sensor based on hydrothermally prepared low-dimensional β-Fe2O3 nanoparticles

Hydrothermally prepared as-grown low-dimensional nano-particles (NPs) have been characterized using UV–vis spectroscopy, Fourier transform infrared (FT-IR) spectroscopy, powder X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and electron dispersion spectroscopy (EDS). The uniformity of the nano-material was executed by the scanning electron microscopy, where the single phase of the nano-crystalline β-Fe₂O₃ was characterized using XRD techniques. β-Fe₂O₃ nanoparticles fabricated glassy carbon electrode (GCE) have improved chloroform-sensing performances in terms of electrical response (I–V technique) for detecting analyte in liquid phase. The analytical performances were investigated, which showed that the better sensitivity, stability, and reproducibility of the sensor improved significantly by using Fe₂O₃ NPs thin-film on GCE. The calibration plot was linear (R = 0.9785) over the large range of 12.0 μM to 12.0 mM. The sensitivity was calculated as 2.1792 μA cm⁻² mM⁻¹ with a detection limit of 4.4 ± 0.10 μM in short response time (10.0 s).     

基于BiB3O6晶体的飞秒光参量变换特性

对基于新型非线性晶体BiB₃O₆(BIBO)的飞秒光参量变换过程的参量特性进行了研究. 计算了BIBO晶体三个光学主平面内的相位匹配条件和有效非线性系数,确定了克尔透镜锁模钛宝石激光器的基频光与倍频光抽运时最佳的光学主平面和相位匹配方式,并分析了三波的时间走离和空间走离,以及信号光的参量增益和带宽. 为利用基于BIBO晶体的飞秒光参量技术获得高能量、宽调谐、窄脉宽的光源提供理论依据和实验指导. 关键词： 3O₆')" href="#">BiB₃O₆ 光参量变换 共线相位匹配 光学主平面     

Optical and electrical properties of Sb-doped β-Ga2O3 crystals grown by OFZ method

Sb-doped β-Ga₂O₃ crystals were grown using the optical floating zone(OFZ) method.X-ray diffraction data and X-ray rocking curves were obtained,and the results revealed that the Sb-doped single crystals were of high quality.Raman spectra revealed that Sb substituted Ga mainly in the octahedral lattice.The carrier concentration of the Sb-doped single crystals increased from 9.55 × 10¹⁶ to 8.10 × 10¹⁸ cm^-3,the electronic mobility depicted a dec...     

Theoretical investigation on the optical absorption spectra and local lattice structure of α-Al2O3:Yb crystals

In this paper, the optical absorption spectra of Yb³⁺ in the α-Al₂O₃ crystal are reasonably explained by using the superposition model and local lattice structure analysis. Based on these studies, we find that the local geometrical structure around the Yb³⁺ ions possesses an elongated trigonal distortion above the O²⁻-triangle and a compressed trigonal distortion in the lower one.     

Synthesis and characterization of β-Ga2O3 nanorods

A novel method was applied to prepare β-Ga₂O₃ nanorods. In this method, β-Ga₂O₃ nanorods have been successfully synthesized on Si(1 1 1) substrates through annealing sputtered Ga₂O₃/Mo films under flowing ammonia at 950 °C in a quartz tube. The as-synthesized nanorods are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and Fourier transform infrared spectroscopy (FTIR). The results show that the nanorod is single-crystalline Ga₂O₃ with monoclinic structure. The β-Ga₂O₃ nanorods are straight and smooth with diameters in the range of 200-300 nm and lengths typically up to several micrometers. The growth process of the β-Ga₂O₃ nanorods is probably dominated by conventional vapor-solid (VS) mechanism.     

Synthesis and properties of Au-Fe3O4 and Ag-Fe3O4 heterodimeric nanoparticles

Monodisperse Au-Fe 3 O 4 heterodimeric nanoparticles (NPs) were prepared by injecting precursors into a hot reaction solution.The size of Au and Fe 3 O 4 particles can be controlled by changing the injection temperature.UV-Vis spectra show that the surface plasma resonance band of Au-Fe 3 O 4 heterodimeric NPs was evidently red-shifted compared with the resonance band of Au NPs of similar size.The as-prepared heterodimeric Au-Fe 3 O 4 NPs exhibited superparamagnetic properties at room temperature.The Ag-Fe 3 O 4 heterodimeric NPs were also prepared by this synthetic method simply using AgNO 3 as precursor instead of HAuCl 4.It is indicated that the reported method can be readily extended to the synthesis of other noble metal conjugated heterodimeric NPs.     

Self-powered solar-blind photodiodes based on EFG-grown(100)-dominant β-Ga2O3 substrate

We report the edge-defined-film-fed(EFG)-grown β-Ga₂O₃-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~10⁴ at ±5 V.In addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 10¹⁰ Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered operation.This work may advance the development of the Ga₂O₃-based Schottky diode solar-blind photodetectors.     

Investigation of structural,physical and optical properties of CeO2–Bi2O3–B2O3 glasses

xCeO₂–30Bi₂O₃–(70−x) B₂O₃ glasses are synthesized by using the melt quench technique. A number of studies such as XRD, density, molar volume, optical band gap, refractive index and FTIR spectroscopy are employed to characterize the glasses. The band gap decreases from 2.15 to 1.61 eV, refractive index increases from 2.67 to 2.93 and density increases from 4.151 to 4.633 g/cm³. The decrease in band gap with CeO₂ doping approaches the semiconductor behavior. FTIR spectroscopy reveals that incorporation of CeO₂ into glass network helps to convert the structural units of [BO₃] into [BO₄] and results in Bi–O bond vibration of [BiO₆].     

Synthesis and characterization of β-Ga2O3 nanostructures grown on GaAs substrates

β-Ga₂O₃ nanostructures including nanowires, nanoribbons and nanosheets were synthesized via thermal annealing of gold coated GaAs substrates in N₂ ambient. GaAs substrates with different dopants were taken as the starting material to study the effect of doping on the growth and photoluminescence properties of β-Ga₂O₃ nanostructures. The nanostructures were investigated by Grazing Incident X-ray Diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy, Energy Dispersive X-ray Spectroscopy, room temperature photoluminescence and optical absorbance. The selected area electron diffraction and High resolution-TEM observations suggest that both nanowires and nanobelts are single crystalline. Different growth directions were observed for nanowires and nanoribbons, indicating the different growth patterns of these nanostructures. The PL spectra of β-Ga₂O₃ nanostructures exhibit a strong UV-blue emission band centered at 410 nm, 415 nm and 450 nm for differently doped GaAs substrates respectively. A weak red luminescence peak at 710 nm was also observed in all the samples. The optical absorbance spectrum showed intense absorption features in the UV spectral region. The growth and luminescence mechanism in β-Ga₂O₃ nanostructures are also discussed.     

Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate

This paper reports that/3-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si（111） substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction,Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown β-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100 nm to 200 nm and lengths typically up to 2μm. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.     

Physical,optical and radiative properties of CaSO4–B2O3–P2O5 glasses doped with Sm3+ ions

Trivalent rare earth ions doped borosulfophosphate glasses are in high demand owing to their several unique attributes that are advantageous for applications in diverse photonic devices. Thus, Sm³⁺ ion doped calcium sulfoborophosphate glasses with composition of 25CaSO₄–30B₂O₃–(45?x)P₂O₅–xSm₂O₃ (where x?=?0.1, 0.3, 0.5, 0.7 and 1.0 mol%) were synthesized using melt-quenching technique. X-ray diffraction confirmed the amorphous nature of the prepared glass samples. Differential thermal analyses show transition peaks for melting temperature, glass transition and crystallization temperature. The glass stability is found in the range 91?°C to 116?°C which shows increased stability with addition of Sm₂O₃ concentration. The Fourier transform infrared spectral measurements carried out showed the presence of vibration bands due to PO linkage, BO_3, BO₄, PO₄, POP, OPO, SOB, and BOB unit. Glass density showed increase in value from 2.179 to 2.251?g cm^?3 with increase in Sm₂O₃ concentration. The direct, indirect band gap and Urbach energy calculated were found to be within 4.368–4.184?eV, 3.641–3.488?eV and 0.323–0.282?eV energy ranges, respectively. The absorption spectra revealed ten prominent peaks centered at 365, 400, 471, 941, 1075, 1228, 1375, 1477, 1528 and 1597?nm corresponding to ⁴D_3/2,⁶H_5/2→⁴I_11/2,⁶P_3/2, ⁶F_11/2, ⁶F_9/2, ⁶F_7/2, ⁶F_5/2, ⁶F_3/2, ⁶H_15/2 and ⁶F_1/2 transitions respectively. Photoluminescence spectra monitored at the excitation of 398?nm exhibits four emission bands positioned at 559, 596,643 and 709?nm corresponding to ⁴G_5/2→⁶H_5/2, ⁶H_7/2, ⁶H_9/2 and ⁶H_11/2 transitions respectively. The nephelauxetic parameters calculated showed good influence on the local environment within the samarium ions site and the state of the SmO bond. The Judd–Ofelt intensity parameters calculated for all glass samples revealed that Ω_6?>?Ω_4?>?Ω₂. The emission cross-section and the branching ratios values obtained for ⁴G_5/2→⁶H_7/2 transition indicate its suitability for LEDs and solid-state laser application.     

Spectroscopic characterization of β-FeSi2 single crystals and homoepitaxial β-FeSi2 films by XPS and XAS

Chemical state analysis by a combination of X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS) using synchrotron radiation is performed for β-FeSi₂ single crystals and homoepitaxial β-FeSi₂ films. The Si 2p XPS and Fe L-edge XAS spectra imply that the annealing at 1173 K to remove native oxide layers on the crystal induces the formation of FeSi in the surface. The formation of FeSi is also confirmed by Si K-edge XAS analysis. For the homoepitaxial β-FeSi₂ films grown on the crystals, the Si K-edge XAS spectra indicate that structurally homogeneous β-FeSi₂ films can be grown on the β-FeSi₂ single crystals when the substrate temperatures of 973 and 1073 K are applied for molecular beam epitaxy (MBE). Consequently, it is indicated that the combination of XPS and XAS using synchrotron radiation is a useful tool to clarify chemical states of β-FeSi₂ single crystals and homoepitaxial β-FeSi₂ films, which is important to reveal optimized growth conditions of homoepitaxial films.     

Amplified Spontaneous Emision of K2Yellow Band Excimer and Its Gain Measurement by e-beam-pumpingResearch on Injection-seeded β-BaB2O4Optical Parameteric Oscillator

The design of a high temperature cell appropriate for electron beam side pumping of alkali excimer lasers is described. By using the cell, an amplified spontaneous emission (ASE) and small signal gain coefficient of 4% cm-1 of the K2 yellow band (574 nm) were observed from the e beam excited mixture of K/K2 vapor with argon buffer gas. The dissociative recombination of K+3 is discussed as an efficient formation process of upper states by electron beam pumping.It has demonstrated the feasibility of a β-BaB2O4 optical parametric oscillator(OPO) without frequency control elements that produces very narrow bandwidth, 10 ns pulses via injection seeding. It was achieved by a CW He Ne laser and the experiment threshold for injection seeding is less than 1 mW. With 25 mJ pump energy at 354.7 nm, it has obtained pulse energy of 2 mJ at 632.8 nm and the total effiency is greater than 15%.     

Biomolecule-assisted hydrothermal synthesis of Sb2S3 and Bi2S3 nanocrystals and their elevated-temperature oxidation behavior for conversion into α-Sb2O4 and Bi2O3

We have developed a novel biomolecule-assisted hydrothermal method to prepare Sb₂S₃ and Bi₂S₃ nanocrystals with various sizes and shapes, in which cysteine combined with other sulfur source can exert the synergistic effect on products. The samples were characterized XRPD, TEM, HRTEM, FESEM, and PL techniques. First, we prepared a series of Sb₂S₃ and Bi₂S₃ nanocrystals by simply adjusting the composition of sulfur sources under hydrothermal conditions. Then, we studied the elevated-temperature oxidation behavior of these sulfides in air, which can lead to the formation of α-Sb₂O₄ and Bi₂O₃ samples at 600 °C for 3 h. The optical properties of the α-Sb₂O₄ and Bi₂O₃ samples were also discussed.     

Solvothermal synthesis and characterization of α-Fe2O3 nanodiscs and Mn3O4 nanoparticles with 1,10-phenanthroline

α-Fe₂O₃ nanodiscs and Mn₃O₄ nanoparticles have been prepared by the 1,10-phenanthroline as complexing agent in the presence of sodium hydroxide under hydrothermal conditions. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and Fourier transform infrared (FT-IR) spectra. The average diameter of α-Fe₂O₃ nanodiscs is of 2 μm. In the case of Mn₃O₄ sample, the Mn₃O₄ crystallites are nanoparticles with an average size of 34 nm. A formation mechanism for the α-Fe₂O₃ and Mn₃O₄ nanomaterials was proposed.