Modeling and experimental investigation of short pulse Raman microchip laser

The results of experimental and theoretical investigations of passive Q-switch Raman microchip lasers based on Nd³⁺:LSB active medium and Ba(NO₃)₂ Raman crystal are presented. It has been demonstrated that intracavity Raman conversion in the microchip lasers is a simple and efficient method, capable of delivering high power pulses with sub-100 ps duration. Intracavity generation of the 1st Stokes pulses with duration from 180 down to 48 ps and a peak power of 48 kW has been performed and studied. High peak power and short duration of the 1st Stokes pulses in microchip laser with Ba(NO₃)₂ Raman crystal allows to easily perform extracavity harmonic generation and frequency sum mixing in LBO, BBO, and KTP crystals with discrete-tunable wavelength from ∼1200 down to ∼240 nm. We have developed a generalized model of Q-switched Raman microchip lasers, that takes into account spatial inhomogeneity of pump, laser, and Stokes beams, thermalization within the upper and lower multiplets of activator ions in laser medium, and saturable absorber bleaching and recovery. For the microchip lasers with different saturable absorbers, the model achieves very good agreement with the presented experimental results in a wide range of pump powers.     

High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns

We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO₄ laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In_0.25Ga_0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 μm thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm thick laser crystal and a 1 mm thick laser crystal, respectively.     

Generation of Laguerre–Gaussian modes in fiber-coupled laser diode end-pumped lasers

A technique has been developed for the generation of Laguerre–Gaussian (LG_0,l) modes in a fiber-coupled laser diode end-pumped microchip laser. A theoretical model is also developed to predict how the oscillation of LG_0,l modes is affected by the pump position, the pump size and the cavity mode size. With a 1-W fiber-coupled diode, the highest-order LG_0,l mode that can be generated is l=23. Received: 8 June 2000 / Revised version: 2 July 2000 / Published online: 20 September 2000     

Waveguide structures written in SF57 glass with fs-laser pulses above the critical self-focusing threshold

Waveguide writing with femtosecond (fs) laser pulses in glasses is compromised by uncontrollable non-linear propagation phenomena for powers exceeding a certain threshold, P_cr, which is inversely proportional to the material linear and non-linear refractive indices, n₀ and n₂, respectively. We have studied the behaviour of a commercial glass, Schott SF57, with high values of n₀ and n₂ when it is processed above P_cr with 800 and 1260 nm, 100 fs laser pulses to produce waveguide structures. Two types of structures, longitudinal (l-) and transversal (t-) ones depending on the sample translation, were obtained. In both of them, material damage surrounded by guiding regions was generated. We attribute the formation of the guiding regions of increased refractive index to the high local pressure reached in the focal volume where catastrophic damage occurs. This pressure can be high enough to compress the material nearby thus generating regions with a permanent refractive index increase up to 5 × 10⁻⁴. The efficiency of the guiding region is conditioned by the pulse energy. Mode profile analyses reveal double-sided exponential guided modes in the l-waveguides. As an alternative route to obtain suitable mode shapes and, simultaneously, to increase the coupling efficiency, the use of multiple structures has been investigated. Various l-structures have been written close to each other generating a region of increased refractive index large enough to effectively support a Lorentzian mode at 633 nm.     

Femtosecond laser embedded grating micromachining of flexible PDMS plates

We report on the femtosecond laser micromachining of photo-induced embedded diffraction grating in flexible Poly (Dimethly Siloxane) (PDMS) plates using a high-intensity femtosecond (130 fs) Ti: sapphire laser (λ_p = 800 nm). The refractive index modifications with diameters ranging from 2 μm to 5 μm were photo-induced after the irradiation with peak intensities of more than 1 × 10¹¹ W/cm². The graded refractive index profile was fabricated to be a symmetric around from the center of the point at which femtosecond laser was focused. The maximum refractive index change (Δn) was estimated to be 2 × 10⁻³. By the X-Y-Z scanning of sample, the embedded diffraction grating in PDMS plate was fabricated successfully using a femtosecond laser.     

Highly efficient Nd:GdVO4/BiBO laser at 456 nm under direct 880 nm diode laser pumping

The continuous-wave high-efficiency laser emission of Nd:GdVO₄ at the second-harmonic of 456 nm obtained by intracavity frequency doubling with an BiB₃O₆(BiBO) nonlinear crystal is investigated under pumping by diode laser at 880 nm into emitting level ⁴F_3/2. About 3.8 W at 456 nm with M² = 1.4 was obtained from a 5 mm-thick 0.4 at.% Nd:GdVO₄ laser medium and a 12 mm-long BiBO nonlinear crystal in a Z-type cavity for 13.9 W absorbed pump power. An optical-to-optical efficiency with respect to the absorbed pump power was 0.274. Comparative results obtained for the pump with diode laser at 808 nm, into the highly-absorbing ⁴F_5/2 level, are given in order to prove the advantages of the 880 nm wavelength pumping.     

High-power, continuous-wave Ti:sapphire laser pumped by fiber-laser green source at 532 nm

We report the first experimental demonstration of efficient and high-power operation of a Ti:sapphire laser pumped by a simple, compact, continuous-wave (cw) fiber-laser-based green source. The pump radiation is obtained by direct single-pass second-harmonic-generation (SHG) of a 33 W, cw Yb-fiber laser in a 30-mm-long MgO:sPPLT crystal, providing 11 W of single-frequency green power at 532 nm in TEM₀₀ spatial profile with power and frequency stability better than 3.3% and 32 MHz, respectively, over 1 h. The Ti:sapphire laser is continuously tunable across 743-970 nm and can deliver an output power up to 2.7 W with a slope efficiency as high as 32.8% under optimum output coupling of 20%. The laser output has a TEM₀₀ spatial profile with M²<1.44 across the tuning range and exhibits a peak-to-peak power fluctuation below 5.1% over 1 h.     

Observation of nonstationary effects in saturation spectroscopy

We have studied the nonstationary effects in saturated absorption spectroscopy of the ⁸⁷Rb D₂ line. Varying the size of the σ⁺ polarized pump laser beam, we observed saturated absorption spectra for the σ^± polarized probe beam. For equal polarizations of the pump and probe beams, we found that the resonance signal for the F_g = 1 → F_e = 2 line, and the crossover lines between F_g = 1 → F_e = 2 and F_g = 1 → F_e = 1 (and 0) lines increased to a greater extent than the others. This observation can be understood from the calculated time evolution of the populations of the ground-state sublevels by means of a rate equation model. We also compared experimental data for other conditions with the calculated results. We found good agreement between the calculated results and the data.     

Nitrogen lasers: Optical devices of variable gain coefficient

A N₂-laser system, consists of an oscillator and an amplifier of different electrode lengths, ranged from 5 to 31 cm, operating under the optimized gas pressures conditions and 14 kV input voltage, was used to measure small signal gain, g₀, and saturation energy density, E_s. It was found that g₀-parameter follows a profile of the type m + n/l_AMP, where l_AMP is the effective electrode length of the laser amplifier, and (m, n) are some constants. So, by reducing the active length a gain value as high as ∼1.2 cm⁻¹ for l_AMP = 5 cm was obtained. The proposed function, with a rather good approximation, can be used to explain almost all the reported g₀-values of laser systems with moderate current densities. For explaining more details of the reported gain coefficients, the g₀l_AMP-parameter was introduced, where it was realized that with a good approximation a Gaussian profile is a suitable function for explaining the reported g₀l_AMP-products. Furthermore, we found that at a constant input voltage the saturation energy density and output energy density, E_out, regardless of the type of N₂-lasers and their operational conditions, are linearly correlated. Based on this observation, and by operating the system at different input voltages, the functional dependence of the measured E_s/E_out-values with respect to the operational voltages is introduced. Details of our present observations, along with the previously reported g₀, and E_s-measurements are presented graphically, or tabulated. The results are giving some interesting features of TE/TEA N₂-lasers for lasers g₀, E_s predictions which are valuable for laser designs and also for further theoretical investigations.     

Frequency splitting phenomenon of dual transverse modes in a Nd:YAG laser

We observed frequency splitting phenomenon of dual transverse modes (TEM_00q and TEM_01q) in a Nd:YAG microchip standing wave laser utilizing intracavity stress birefringence effects. Four resonance frequencies (ν_00qe, ν_00qo, ν_01qe, and ν_01qo, respectively) were produced and tuned by changing the diametral compression force applied on the laser crystal. The transverse mode frequency spacing for the same longitudinal mode number (Δν_trans) was 1.16 GHz, and the magnitude of frequency splitting (Δν) ranged from 0 MHz to 1.16 GHz. Based on this phenomenon, a four-mode differential standing wave laser, whose signal characteristics were a little like those of a four-mode differential travelling wave laser gyro however with a much larger frequency splitting range, was produced. The theoretical analysis is in good agreement with the experimental results. This phenomenon not only can be used to make lasers with two or more frequency differences, but also can be used to make high-resolution self-sensing laser sensors (e.g. laser force sensors and laser accelerometers).     

Doppler spectroscopy of arbitrarily polarized light in rubidium

We present an experimental and theoretical study of the transmission of an arbitrarily polarized laser beam for a Doppler broadened rubidium vapor cell. As the polarization of the probe beam was varied from linear to circular, the transmission for the transitions F_g = 3 → F_e = 2, 3, 4 of the D₂ line of ⁸⁵Rb atoms was measured and compared with calculated results. In the calculation, the time-dependent absorption coefficient, calculated numerically from the density-matrix equation, was averaged over the velocity distribution and various transit time crossing the laser beam. The final transmission was obtained by considering the Gaussian profile of the laser beam. We found good agreement between experimental and calculated results.     

124 W diode-side-pumped Nd:YAG laser in dynamic fundamental mode

A high power dynamic fundamental mode Nd:YAG laser is experimentally demonstrated with a stagger-pumped laser module and a V-shaped resonator. The rod is pumped symmetrically by staggered bar modules. And dynamic fundamental mode is achieved under different pump levels. The maximal continuous wave (CW) output of 124 W (M²=1.4) is achieved with a dual rod. Average output of 112 W, pulse width of 120 ns, pulse energy of 11.2 mJ and peak power of 93 kW are obtained in Q-switched operation of 10 kHz.     

High power diode-pumped passively Q-switched and mode-locking Nd:GdVO4 laser at 912 nm

A high power diode-end-pumped passively Q-switched and mode-locking (QML) Nd:GdVO₄ laser at 912 nm was demonstrated for the first time, to the best of our knowledge. A Z-type laser cavity with Cr⁴⁺:YAG crystals as the intracavity saturable absorber were employed in the experiments. Influence of the initial transmission (T_U) of the saturable absorber on the QML laser performance was investigated. Using the T_U = 95% Cr⁴⁺:YAG, as much as an average output power of 2.0 W pulsed 912 nm laser was produced at an absorbed pump power of 25.0 W, then the repetition rates of the Q-switched envelope and the mode-locking pulse were ~ 224 kHz and ~ 160 MHz, respectively. Whereas the maximum output power was reduced to 1.3 W using the T_U = 90% Cr⁴⁺:YAG, we obtained a 100% modulation depth for the mode-locking pulses inside the Q-switched envelope.     

494.5 nm generation by sum-frequency mixing of diode pumped neodymium lasers

We report a coherent radiation at 494.5 nm by intra-cavity sum-frequency generation of 912 nm Nd:GdVO₄ laser and 1080 nm Nd:CaYAlO₄ laser. Blue laser is obtained by using a doubly folded cavity, type-II critical phase matching KTP (KTiOPO₄) crystal sum-frequency mixing. With total pump power of 33 W (13.8 W pump power for 1080 nm Nd:CaYAlO₄ laser and 19.2 W pump power for 912 nm Nd:GdVO₄ laser), TEM₀₀ mode blue laser at 494.5 nm of 1.6 W is obtained. The power stability in 30 min is better than 3.5%.     

Flexible gratings fabricated in polymeric plate using femtosecond laser irradiation

Flexible gratings embedded in poly-dimethlysiloxane (PDMS) were fabricated using femtosecond laser pulses. Photo-induced gratings in a flexible PDMS plate were directly written by a high-intensity femtosecond (130 fs) Ti: Sapphire laser (λ_p=800 nm). Refractive index modifications with 4 μm diameters were photo-induced after irradiation of the femtosecond pulses with peak intensities of more than 1×10¹¹ W/cm². The graded refractive index profile was fabricated to be symmetric around the center of the focal point. The diffraction efficiency of the grating samples is measured by an He-Ne laser. The maximum value of refractive index change (Δn) in the laser-modified regions was estimated to be approximately 3.17×10⁻³.     

A two dimensional theoretical model for describing gain coefficient in N2-lasers and the model validity for CVL and excimer lasers

Based on our previously reported measurements on the gain-value in a N₂- laser and numerical calculations, we introduce a method to obtain an analytical expression for the small signal gain, g₀, where the dependency of g₀ on the laser geometrical configuration, including electrodes length and gap separation, is demonstrated. For this study one- and two-dimensional approaches for the photon density have been applied independently to determine gain-parameter, where for explaining the observed dependency of the gain-parameter on the laser electrodes separation, d_AMP, which was found experimentally and explained by an empirical expression of the type g₀ = r + q/d_AMP, with r and q some constants, realization of introducing an extra dimension along the gap separation was unavoidable. For the electrodes length, l_AMP, we have already shown that an empirical equation of the type g₀ = m + n/l_AMP, with m and n some constants, is consistent with the measurements corresponding to N₂-lasers. With this realization, it is proved that the gain-parameter in N₂-lasers can be written as g₀^{above threshold} = m″ + g_0z(γ_L^z, z) + g_0y(γ_L^y, y), where it consists of two independent gain-values along the electrodes length (z) and gap separation (y) with the corresponding power losses given by γ_L^z and γ_L^y. m″ is a very small quantity showing that laser is operating slightly above the threshold. The results of this calculation are consistent with our recent measurements and also other reported N₂-laser gain values measured under moderate current density conditions. To check the validity of the model for other types of lasers, the reported gain-values for copper vapor lasers of different laser tube radii, R_AMP, and tube lengths, l_AMP, have been examined using the one-dimensional model of either g₀(R_AMP) or g₀(l_AMP) and the consistency with the observed measurements was found to be quite satisfactory. The model was also found to be valid for the excimer lasers of different types, different gas mixtures and pressures at a constant input operational voltage. Due to limited numbers of the reported experimental measurements, for the graphs preparation of g₀(l_AMP) in excimer lasers we used the observed data at V₀ = 30 kV and also some variations of the input voltages in the range of ΔV ≅ 20 kV have been adopted. The results for both cases were found to be consistent with the proposed one-dimensional model.     

Passively Q-switched diode-pumped Cr:YAG/Nd:GdVO4 monolithic microchip laser

The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO₄ crystal and a Cr⁴⁺:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO₄ optically contacted on a 0.4 mm long Cr⁴⁺:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.     

Temperature dependence of rotational relaxation of methane in the 2ν3 vibrational state by self- and nitrogen-collisions and comparison with line broadening measurements

Depopulation rates of rotational levels in the v₃ = 2 vibrational state of ¹²CH₄ are investigated by a pump-probe technique. Methane molecules are excited into selected rotational levels by tuning the pump laser to 2ν₃ lines. The time evolution in population of the excited level after the pumping pulse is monitored by tuning the probe laser to a (3ν₃ ← 2ν₃) line corresponding to a transition with the excited rotational level as the lower level. Measurements were performed from room temperature down to 100 K in pure CH₄ and in CH₄-N₂ mixtures. The rotational relaxation rate coefficients are given for the J = 1, A₂, J = 1, E, J = 1, F₂ and J = 0, F₂ levels. The results are compared with the available data on line broadening coefficients. The temperature dependence of the data on N₂-broadening is particularly well reproduced by the power law deduced from the results on rotational relaxation.     

The controlled excitation of forbidden transitions in the two-photon spectrum of strontium by using collisions and electric fields

We present experimental results involving controlled configuration mixing in two-photon spectroscopy of highly-excited states by exploiting a weak external electric field and collisions. The method has allowed new extensions to high members of the two-photon forbidden J = 3 odd-parity 5snf ¹F₃ and the J = 0, even-parity 5sns ¹S₀ Rydberg series of neutral strontium to be observed. We achieve resonant two-photon transverse excitation of a high density atomic jet by using a narrow bandwidth tunable dye laser in a heat pipe setup with sensitive ionization detection. Experimental term values are extended for the 5sns ¹S₀ series up to n = 46. By suitable exploitation of the composition and pressure of the buffer gases in conjunction with the electric field strength in the excitation region and the exciting laser beam intensity we have also extended observations up to n = 44 for the 5snf ¹F₃ series and up to n = 46 for the 5snp ¹P₁ series. Our results demonstrate a novel and remarkably simple experimental method to access high Rydberg states to which transitions are forbidden from the ground state by parity and other selection rules.