基于钛酸锶钡介电非线性效应的可调谐太赫兹人工电磁媒质

数值仿真研究了内嵌钛酸锶钡薄膜夹层的金属网格谐振单元人工电磁媒质的谐振行为. 垂直电磁波激励下, 电磁响应频率随着内嵌夹层钛酸锶钡薄膜介电常数的变大呈现红移, 调谐率为22.6%. 本文提出的人工电磁媒质调谐方法只需要以结构单元的上下两层金属图形本身作为电极对内嵌夹层钛酸锶钡薄膜施加电压, 极大地简化了可调谐人工电磁媒质的制备及应用, 在太赫兹人工电磁媒质调制器等方面具有潜在的应用. 关键词： 人工电磁媒质 钛酸锶钡薄膜 介电非线性 调谐     

Optically implemented broadband blueshift switch in the terahertz regime

We experimentally demonstrate, for the first time, an optically implemented blueshift tunable metamaterial in the terahertz (THz) regime. The design implies two potential resonance states, and the photoconductive semiconductor (silicon) settled in the critical region plays the role of intermediary for switching the resonator from mode 1 to mode 2. The observed tuning range of the fabricated device is as high as 26% (from 0.76 THz to 0.96 THz) through optical control to silicon. The realization of broadband blueshift tunable metamaterial offers opportunities for achieving switchable metamaterials with simultaneous redshift and blueshift tunability and cascade tunable devices. Our experimental approach is compatible with semiconductor technologies and can be used for other applications in the THz regime.     

An ultra-broadband metamaterial absorber based on the hybrid materials in the visible region

In this paper, an ultra-broadband metamaterial absorber is successfully designed in the visible region. The structure of the absorber is just obtained by the two-dimensional plane structure which rotate 90° along x-axis. Furthermore, the formation of the structure for the hybrid materials is based on the four U-shaped structure of the metal titanium is embedded in the semiconductor (indium antimonide). The simulated results show that the proposed metamaterial absorber can achieve an ultra-broadband absorption with greater than 90% from 252.2 to 822.3 THz, and the relative absorption bandwidth gets to 106.1%. Finally, the simulated electric field, surface current and power loss density distributions further illustrate the absorption mechanism of the metamaterial absorber. And we believe the metamaterial absorber will have many potential applications in energy harvesting and stealth devices.     

Microwave generator based on tunnel-coupled semiconductor-metamaterial structure

We propose a model of a tunable laser based on a tunnel-coupled waveguide semiconductormetamaterial structure. The waveguide semiconductor channel has a positive refractive index and a high Kerr nonlinearity coefficient. In the frequency range under investigation, the channel formed by the magnetoactive metamaterial is characterized by a negative refractive index. Computer simulation is used for investigating the peculiarities of generation of microwave radiation under pumping due to modulated instability in the semiconductor channel and a distributed feedback. The generation frequency is controlled using the dependence of the refractive index of the metamaterial on the external magnetic field.     

Design and characterization of a tunable DNG metamaterial superstrate for small beam steering antennas

The design and the characterization of a tunable double negative metamaterial is proposed in order to create a superstrate for beam steering applications in small antennas. The tunable metamaterial is based on an omega shaped unit cell and is investigated and validated by waveguide measurements. An appropriate loading of the metamaterial unit cell, through the use of a varactor diode, enables to vary the medium index of the superstrate within an interesting range. This metamaterial superstrate is then associated to a patch antenna in its near field zone permitting to steer the beam in several directions within elevation plane.     

一种基于旋转调谐的超材料

数值仿真研究了一种可调谐的双开口谐振环(DSRR)超材料.在平行入射的电磁波激励下,这种DSRR单元可以在不同的频段分别表现出磁谐振和电谐振.当外加电场E与DSRR的双开口平行时,DSRR受激励得到的磁谐振和电谐振强度最大.随着DSRR超材料沿外加磁场H方向顺时针旋转,其磁谐振和电谐振频率基本保持不变,但谐振强度均发生显著下降,同时对应透射相位的突变也逐渐降低.提出的超材料调谐方法只需要简单地旋转材料,而不需要改变原有超材料单元的结构或者增加额外的激励场,极大地简化了可调谐超材料的制备及应用,在电磁开关、相位调制等方面具有潜在的应用.同时,这种简单的方法有希望应用于更高频段的超材料调谐,可以有效地拓展太赫兹频段和光频段超材料的实际应用.     

HfO_2-based ferroelectric modulator of terahertz waves with graphene metamaterial

Tunable modulations of terahertz waves in a graphene/ferroelectric-layer/silicon hybrid structure are demonstrated at low bias voltages. The modulation is due to the creation/elimination of an extra barrier in Si layer in response to the polarization in the ferroelectric Si:HfO_2 layer. Considering the good compatibility of HfO_2 with the Si-based semiconductor process, the highly tunable characteristics of the graphene metamaterial device under ferroelectric effect open up new avenues for graphene-based high performance integrated active photonic devices compatible with the silicon technology.     

Bose–Einstein condensation in mesoscopic systems: The self-similar structure of the critical region and the nonequivalence of the canonical and grand canonical ensembles

A new hyperbolic metamaterial based on a modified semiconductor Bragg mirror structure with embedded periodically arranged quantum wells is proposed. It is shown that exciton polaritons in this material feature hyperbolic dispersion in the vicinity of the second photonic band gap. Exciton–photon interaction brings about resonant nonlinearity leading to the emergence of nontrivial topological polaritonic states. The formation of spatially localized breather-type structures (oscillons) representing kink-shaped solutions of the effective Ginzburg–Landau–Higgs equation slightly oscillating along one spatial direction is predicted.     

Tunable electromagnetically induced transparency at terahertz frequencies in coupled graphene metamaterial

A graphene-based metamaterial with tunable electromagnetically induced transparency(EIT)-like transmission is numerically studied in this paper. The proposed structure consists of a graphene layer composed of coupled cut-wire pairs printed on a substrate. The simulation confirms that an EIT-like transparency window can be observed due to indirect coupling in a terahertz frequency range. More importantly, the peak frequency of the transmission window can be dynamically controlled over a broad frequency range by varying the Fermi energy levels of the graphene layer through controlling the electrostatic gating. The proposed metamaterial structure offers an additional opportunity to design novel applications such as switches or modulators.     

Near-infrared tunable narrow filter properties in a 1D photonic crystal containing semiconductor metamaterial photonic quantum-well defect

The near-infrared (NIR) narrow filter properties in the transmission spectra of a one-dimensional photonic crystal doped with semiconductor metamaterial photonic quantum-well defect (PQW) were theoretically studied. The behavior of the defect mode as a function of the stack number of the PQW defect structure, the filling factor of semiconductor metamaterial layer, the polarization and the angle of incidence were investigated for Al-doped ZnO (AZO) and ZnO as the semiconductor metamaterial layer. It is found that the frequency of the defect mode can be tuned by variation of the period of the defect structure, polarization, incidence angle, and the filling factor of the semiconductor metamaterial layer. It is also shown that the number of the defect mode is independent of the period of the PQW defect structure and is in sharp contrast with the case where a common dielectric or metamaterial defect are used. The results also show that for both polarizations the defect mode is red-shifted as the number of the defect period and filling factor increase. An opposite trend is observed as the angle of incidence increases. The proposed structure could provide useful information for designing new types of tuneable narrowband filters at NIR region.     

温控太赫兹调制器多频带调制特性

基于开口谐振环结构设计了多频带太赫兹波调制器,并在谐振环的开口处及两侧均填充温敏介质锑化铟(InSb),研究了锑化铟的电磁性质随温度的变化、等效电感的组数对共振频带数目的影响以及锑化铟不同的填充方式对太赫兹波调制特性随温度的变化规律。研究结果表明,当环境温度从160 K上升到350 K时,锑化铟的载流子浓度和等离子体频率逐渐增大,然而等效介电常数却不断减小;每增加一组等效电感,太赫兹波调制器都会相应的增加一个共振频带;在调制器开口处和两侧均填充锑化铟时,当环境温度在160～350 K变化时,温度对太赫兹波的共振频率和共振幅度的调制效果比仅在开口处或者两侧填充锑化铟时更明显,且随着温度的升高,每个共振频带所对应的共振频率均明显增大。     

Photonic band gap in a one-dimensional periodic structure with semiconductor metamaterial in the near infrared

We construct a one-dimensional photonic crystal (1DPC) by use of semiconductor metamaterial in the near infrared which is composed of Al-doped ZnO (AZO) and ZnO and dielectric material. The expressions of transmittance and field distribution are deduced by transfer matrix method, and the dispersion curves of anisotropic permittivity of semiconductor metamaterial are analyzed at different ratio of AZO and ZnO. At last simulation results are given to analyze the influence of thickness of dielectric material and incident angle on the transmittance of the proposed PC.     

Light-wave guidance through stratified photonic crystal metamaterials synthesized by superinductive layers of metallic nanostrips

The electrodynamic properties of a novel class of photonic-crystal metamaterial platform entirely synthesized by ultralow-refractive-index suspended nanostrips embedded in a dielectric matrix are described and investigated. The optical properties of the homogeneous metamaterial platform can be understood on the basis of equivalent distributed circuit extraction from an electromagnetic model that has negatively distributed superinductive properties. Low propagation loss, temperature-insensitive characteristics, and ultracompact size are the main advantages of the proposed technology, making this new type of metamaterial an excellent candidate for use in compact multilayer nanophotonic integrated systems.     

Dynamically controlled asymmetric transmission of linearly polarized waves in VO2-integrated Dirac semimetal metamaterials

We numerically demonstrated a novel chiral metamaterial to achieve broadband asymmetric transmission (AT) of linearly polarized electromagnetic waves in terahertz (THz) band. The proposed metamaterial unit cell exhibits no rotational symmetry with vanadium dioxide (VO$_{2}$) inclusion embedded between Dirac semimetals (DSMs) pattern. The resonant frequency of AT can be dynamically tunable by varying the Fermi energy ($E_{\rm F}$) of the DSMs. The insulator-to-metal phase transition of VO$_{2}$ enables the amplitude of the AT to be dynamically tailored. The transmission coefficient $|T_{yx}|$ can be adjusted from 0.756 to nearly 0 by modifying the conductivity of VO$_{2}$. Meanwhile, the AT parameter intensity of linearly polarized incidence can be actively controlled from 0.55 to almost 0, leading to a switch for AT. When VO$_{2}$ is in its insulator state, the proposed device achieves broadband AT parameter greater than 0.5 from 1.21 THz to 1.80 THz with a bandwidth of 0.59 THz. When the incident wave propagates along the backward ($-z$) direction, the cross-polarized transmission $|T_{yx}|$ reaches a peak value 0.756 at 1.32 THz, whereas the value of $|T_{xy}|$ well below 0.157 in the concerned frequency. On the other hand, the co-polarized transmission $|T_{xx}|$ and $|T_{yy}|$ remained equal in the whole frequency range. This work provides a novel approach in developing broadband, tunable, as well as switchable AT electromagnetic devices.     

基于集总元件和负微分元件的有源可调谐超材料传输线

针对无源超材料高色散、高损耗和均匀性差的缺点,利用集总元件和负微分元件设计、加工了一种微波频段的有源可调谐超材料传输线,并对其进行了测试.实验获得了具有散射参数随外加偏置电压改变而变化的电控可调谐特性以及衰减常数为负值的有源超材料传输线.     

Tunable dual-band ferrite-based metamaterials with dual negative refractions

We report on three types of tunable dual-band metamaterial with dual negative refraction in this paper. The three types of metamaterial are composed of ferrite slabs and three different metallic resonators, including split-ring resonators (SRR), Ω-like resonators, and short wire pairs. The ferrite slabs under an applied magnetic bias provide one magnetic resonance frequency band and the three metallic resonators provide another magnetic resonance frequency band, respectively. The continuous wires within the metamaterials provide the negative permittivity in a wide frequency band covering the two magnetic resonance bands. We give the design, analysis and numerical demonstrations of three such types of metamaterial in detail. The effective electromagnetic parameters obtained from the simulated S-parameters indicate that the three types of metamaterial indeed exhibit two negative refraction passbands and the two passbands can also be shifted by changing the magnetic bias. Our results open the way to fabricate tunable dual-band metamaterial cloaks, absorbers, and antennas.     

基于液晶的U波段电控移相超材料

基于液晶材料(LC)的双折射特性提出了一种基于液晶材料的短十字型阵列电控超材料,超材料包括了上层石英板,金属结构阵,中间液晶介质层,金属地板以及下层石英板。相比于传统的阵列天线设计,运用了新的相位补偿方法,即通过加电改变反射阵列单元的介质基板液晶的介电常数得到的相位曲线实现0~250°的相位补偿,使得超材料实现在U波段的相位变化。仿真结果表明,通过将偏压从0增加到14 V,超材料在52 GHz时呈现250°的相移。此外,此超材料的谐振频率可从53.6 GHz连续可逆地转移到49.9 GHz。通过调节超材料液晶激励区域的介电常数即改变阵列单元的谐振特性,实现了相位补偿,为平面反射阵列天线的设计提供了一种新思路。     

Total transmission and total reflection by zero index metamaterials with defects

We theoretically investigate microwave transmission through a zero-index metamaterial loaded with dielectric defects. The metamaterial is impedance matched to free space, with the permittivity and permeability tending towards zero over a given frequency range. By simply varying the radii and permittivities of the defects, total transmission or reflection of the impinging electromagnetic wave can be achieved. The proposed defect structure can offer advances in shielding or cloaking technologies without restricting the object's viewpoint. Active control of the observed exotic transmission and reflection signatures can occur by incorporating tunable refractive index materials such as liquid crystals and BaSrTiO3.     

基于石墨烯和二氧化钒的太赫兹宽带可调谐超材料吸收器

太赫兹超材料吸收器作为一种重要的太赫兹功能器件,被广泛应用于生物医学传感、电磁隐身、军用雷达等多个领域.但这种传统的超材料吸收器结构具有可调谐性差、功能单一、性能指标不足等缺点,已经无法满足复杂多变的电磁环境的要求,因此可调谐超材料吸收器逐渐成为了太赫兹功能器件领域的研究热点.为实现超材料吸收器吸收特性的调谐,通常从调...     

基于VO2薄膜相变原理的温控太赫兹超材料调制器

利用二氧化钒薄膜绝缘相–金属相的相变特性, 提出了一种基于超材料的温控太赫兹调制器, 研究了相变超材料在太赫兹波段的传输特性和温控可调谐特性. 当入射太赫兹波为水平偏振或垂直偏振状态时, 器件的透过率谱线在1 THz附近呈现出两个独立的、中心频率分别为1.3 THz和1.7 THz、 带宽分别为0.2 THz和0.35 THz的 透射宽带. 当温度从40℃至80℃变化时, 两宽带的透过率发生明显的降低, 在二氧化钒的相变温度(68℃)时尤其灵敏, 对入射光的二种偏振状态, 调制深度均达到60%以上, 实现了良好的调制效果. 关键词： 太赫兹超材料 2薄膜')" href="#">VO₂薄膜 调制器 相变