Passively Q-switched laser operation in a composite Nd:YVO4/Nd:YVO4/Nd:YVO4 crystal with a GaAs saturable absorber

By using a piece of GaAs wafer as the saturable absorber, the performance of the passively Q-switched composite Nd:YVO₄ laser with different output couplers has been demonstrated for the first time as far as we know. The largest continuous wave output power of 1.52 W is obtained at the incident pump power of 5.31 W, giving an optical conversion efficiency of 28.7% and a slope efficiency of 30.2%. The shortest pulse width of 11 ns, the largest single-pulse energy of 2.49 μJ and the highest peak power of 190 W are also obtained.     

The acousto-optic Q-switched mode-locking Nd:YVO4 laser

Q-switched mode locking (QML) has been observed in acousto-optic Q-switched Nd:YVO₄ laser that contained no mode-locking components. It was found that QML was easily realized in a long cavity and the modulation depth was observed to increase with increased cavity length. The maximum modulation depth was as high as 90%. This phenomenon is explained by the introduction of gain-related effect in the gain medium. The longitudinal modes at higher frequency, than the central frequency of the gain profile, experience positive guiding, which results in mode locking of these modes.     

Diode-end-pumped passively Q-switched Nd:Y0.8Lu0.2VO4 laser with Cr:YAG crystal

A diode end-pumped passively Q-switched Nd: Y_0.8Lu_0.2VO₄ laser with a Cr⁴⁺: YAG crystal is first demonstrated in this paper. The maximum continuous wave (CW) output power of 5.59 W is obtained at the incident pump power of 13.07 W with the output transmission T = 20%, resulting in an optical-to-optical efficiency of 42.7%. For Q-switching operation, the measured pulse duration of 8.5 ns, the pulse energy of 45.24 μJ and the peak power of 5.32 kW are respectively obtained for the output transmission of 50% when the Cr⁴⁺: YAG crystal is used with an initial transmission (T₀) of 60%.     

A comparative study of continuous laser operation on the F3/2-I9/2 transitions of Nd:GdVO4 and Nd:YVO4 crystals

A comparative study of Nd:GdVO₄ and Nd:YVO₄ crystal lasers pumped by a fiber-coupled diode array has been conducted at the ⁴F_3/2-⁴I_9/2 transitions wavelengths of 912 nm and 914 nm, as well as when intracavity frequency-doubled to 456 nm and 457 nm, respectively. At the fundamental wavelength of 912 nm and second harmonic wavelength of 456 nm, maximum output powers from the Nd:GdVO₄ crystal laser were 7.85 W and 4.6 W at a pump power of 29 W. All the results obtained from Nd:GdVO₄ were superior to those of Nd:YVO₄, indicating that Nd:GdVO₄ is a more efficient laser crystal than Nd:YVO₄ for laser operation on the ⁴F_3/2-⁴I_9/2 transitions.     

Nd:YVO4自受激拉曼激光器调Q锁模特性

利用Nd:YVO4激光晶体的自受激拉曼效应,结合Cr:YAG被动锁模技术和倍频技术,实现了结构紧凑的1176 nm和588 nm黄光锁模激光输出。激光器为LD端面泵浦,三镜折叠腔结构,并且采用了透过率为10%的输出镜。Nd:YVO4晶体长度为10 mm,Nd3+离子掺杂质量分数为0.2%,Cr:YAG晶体的初始透过率为67%。10 W激光泵浦时,1176 nm激光平均输出功率为123 mW,调Q包络宽度为6 ns,调Q包络内的锁模脉冲重复频率高达1 GHz。588.2 nm 黄光的平均输出功率为8 mW。     

Diode-pumped doubly Q-switched mode-locked YVO4/Nd:YVO4 laser with AO and GaAs saturable absorber

By using both acousto-optic (AO) modulator and GaAs saturable absorber, a diode-pumped doubly Q-switched and mode-locked (QML) YVO₄/Nd:YVO₄ laser is presented. The average output power and the pulse width of the Q-switched envelope have been measured. The Q-switch pulse energy of the doubly QML laser are higher than that only with GaAs. The stability of the QML laser with the dual-loss-modulation is significantly improved if compared to that only with GaAs.The experimental results show that the doubly QML YVO₄/Nd:YVO₄ laser has nearly 80% modulation depth and deeper than that of the singly passively QML pulse. The doubly Q-switched mode-locked pulse inside the Q-switched envelope has a repetition rate of 111 MHz and its pulse width is estimated to be about 700 ps. By using a hyperbolic secant square function and considering the Gaussian distribution of the intracavity photon density, the coupled equations for diode-pumped dual-loss-modulated QML laser is given and the numerical solutions of the equations are in good agreement with the experimental results.     

High-power diode-end-pumped CW Nd:GdVO4 laser

We report on a high-power diode-end-pumped CW Nd:GdVO₄ laser. Under the pump power of 39.5 W, a maximum output power of 19.8 W and a slope efficiency of 58.5% were obtained. The beam quality M² at maximum output power was measured to be around 2.62. The thermal focal length in Nd:GdVO₄ crystal under the pump power from 22 to 40.6 W was measured. The pump-induced damage threshold was estimated to be 28.6 kW/cm².     

Passively Q-switched Nd:LuVO4 laser using Cr:YAG as saturable absorber

A passively Q-switched all solid-state Nd:LuVO₄ 1.06 μm laser was demonstrated by using Cr⁴⁺:YAG as saturable absorber. The characteristics of average output power, pulse width, repetition rate, pulse energy, and peak power were studied with different output couplings and initial transmission of saturable absorbers. When output coupling with the transmission of 20% was used, the shortest pulse width of 16 ns at the repetition rate of 12.5 kHz was obtained, which results in the pulse energy of 71 μJ and peak power of 4.43 kW with the initial transmission of 70% of Cr⁴⁺:YAG crystal.     

The thermal effect in diode-end-pumped continuous-wave 914-nm Nd:YVO4 laser

The thermal effect and the heat generation in diode-end-pumped continuous-wave 914-nm Nd:YVO₄ lasers are investigated in detail. A theoretical model of a diode end-pumped solid-state laser is constructed to analyse the influence of fractional thermal loading on the thermal effect in the Nd:YVO₄ laser based on finite element analysis. The thermal focal lengths and the end-surface deformations of laser rods in Nd:YVO₄ quasi-three-level and four-level lasers are measured and compared with the results obtained by ordinary interferometry for the demonstration of higher thermal loading in 914-nm laser. Finally the fractional thermal loading in the Nd:YVO₄ quasi-three-level laser is calculated by matching the experimental and the simulated end deformations.     

Diode-pumped doubly Q-switched Nd:LuVO4 laser with AO modulator and GaAs saturable absorber

A diode-pumped doubly Q-switched Nd:LuVO₄ laser with an acousto-optic (AO) modulator and GaAs saturable absorber has been realized. The pulse profile of the doubly Q-switched Nd:LuVO₄ laser has an almost absolutely symmetric shape. The dependences of pulse width, single-pulse energy and peak power on the incident pump power under different AO repetition rates are measured. By considering the transverse Gaussian distribution of the intracavity photon density and the longitudinal distribution of photon density along the cavity axis, the coupled rate equations of the laser are given. These coupled rate equations are solved numerically and the theoretical results are in agreement with the experimental results.     

Efficient and compact intracavity-frequency-doubled YVO4/Nd:YVO4/KTP laser through analysis of the interaction length

In this paper, a stable end-pumped intracavity-frequency-doubled green laser was demonstrated. The interaction length of different pump systems before setting up the experiment was analyzed in order to find out an effective pump system. The experimental results indicate that the pump system in our configuration is beneficial to the efficient CW Nd lasers. A continue-grown composite crystal YVO₄/Nd:YVO₄, with Nd³⁺ concentration doping of 0.3 at.%, is used as laser medium. With an incident pump power of 27.5 W, as high as 7.2 W of CW output power at 532 nm was achieved. The optical-to-optical conversion efficiency of 26.2% was obtained in CW modes with a flat-flat cavity design.     

Spectroscopic and laser properties of Nd:Gd0.8La0.2VO4 crystal

The polarised absorption and fluorescence spectra of Nd:Gd_0.8La_0.2VO₄ crystal are measured and compared to those of Nd:GdVO₄. CW laser properties of diode-pumped Nd:Gd_0.8La_0.2VO₄ crystal operating at fundamental wavelengths of 1.06 and 1.34 μm, as well as when intracavity frequency-doubled to 532 and 670 nm, have been studied. The maximum output powers at 1.06 μm, 1.34 μm, 532 nm and 670 nm are 1.18 W, 671 mW, 206 mW and 42 mW respectively, at a diode-launched pump power of 2.9 W. The threshold pump powers are 80, 267, 7 and 15 mW respectively.     

Passively Q-switched Nd:GdVO4 laser with GaAs saturable absorber

A xenon flash-lamp-pumped, passively Q-switched Nd:GdVO₄ laser with GaAs semiconductor saturable absorber is demonstrated. The static laser performance is investigated and the static output is 52 mJ when the pump energy is 9.45 J. The dynamic laser has the highest slope efficiency when the GaAs wafer is both the saturable absorber and output coupler. Pulses with duration of 64 ns and dynamic output of 47.6 mJ are obtained when the pump energy is 9.45 J. The highest dynamic–static ratio is 0.9:1. The coupled rate equations are used to simulate the Q-switched process of laser. The theoretical and experimental results are compared and discussed.     

Doubly Q-switched intracavity-frequency-doubled c-cut Nd:GdVO4/KTP green laser with AO and GaAs

By simultaneously using both active and passive Q-switches in the same cavity, a diode-pumped doubly Q-switched intracavity-frequency-doubled c-cut Nd:GdVO₄/KTP green laser with acoustic-optic (AO) modulator and GaAs semiconductor saturable absorber is realized. A comparison between c-cut and a-cut Nd:GdVO₄ crystals shows that the doubly Q-switched c-cut Nd:GdVO₄/KTP green laser can generate narrower pulse and higher peak power when the incident pump power is higher than 4.4 W. In addition, the doubly Q-switched c-cut Nd:GdVO₄/KTP green laser can generate more symmetric and shorter pulse in comparison with singly AO- or GaAs-Q-switched laser. The coupled rate equations are used to simulate the process of these lasers.     

LD-pumped actively Q-switched Nd:GdVO4/KTP red laser

LD-pumped actively Q-switched intracavity frequency-doubled Nd:GdVO₄/KTP red laser has been introduced. A maximum red average output power of 0.78 W at 671 nm was obtained at pulse-repetition frequency (PRF) of 15 kHz and the optical conversion efficiency was 6.5%. At the incident pump power of 12 W, the shortest laser pulse occurred at PRF of 15 kHz. Its full-width at half-maximum and the highest peak power were measured to be 35.8 ns and 3.38 kW. The largest single pulse energy of 56.3 μJ was achieved at PRF of 10 kHz. The influence factors on the Q-switched Nd:GdVO₄/KTP red laser have been discussed.     

High-efficiency Nd:YVO4 laser emission under direct pumping at 880 nm

We report a high-efficiency Nd:YVO₄ laser pumped by an all-solid-state Q-switched Ti:Sapphire laser at 880 nm in this paper. Output power at 1064 nm with different-doped Nd:YVO₄ crystals of 0.4-, 1.0- and 3.0-at.% under the 880 nm pumping was measured, respectively. Comparative results obtained by the traditional pumping at 808 nm into the highly absorbing ⁴F_5/2 level were presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power of the 1.0-at.% Nd:YVO₄ laser under the 880 nm pumping was 17.5% higher and 11.5% lower than those of 808 nm pumping. In a 4-mm-thick, 1.0-at.% Nd:YVO₄ crystal, a high slope efficiency of 75% was achieved under the 880 nm pumping, with an optical-to-optical conversion efficiency of 52.4%.     

High-efficiency longitudinally-pumped miniature Nd:YVO4 laser

We report on fundamental and intracavity frequency-doubled emission in a miniature Nd:YVO₄ (3×3×1 mm) laser. A maximum slope efficiency of η_s=58.6%, with optical efficiency of η₀=53.0% at 780 mW pump power was realized in a TEM₀₀ output beam. To obtain the optimum pump-beam focusing conditions we applied a new formalism in which the pump-beam propagation in the active medium was described by its M² factor. A good agreement between theoretical predictions and experimental results was observed. In second-harmonic regime, obtained by a KTP crystal, 230 mW green power that corresponds to 54% nonlinear conversion efficiency was reached.     

A novel orthogonally linearly polarized Nd:YVO4 laser

We presented a novel orthogonally linearly polarized Nd:YVO₄ laser. Two pieces of a-cut grown-together composite YVO₄/Nd:YVO₄ crystals were placed in the resonant cavity with the c-axis of the two crystals orthogonally. The polarization and power performance of the orthogonally polarized laser were investigated. A 26.2-W orthogonally linearly polarized laser was obtained. The power ratio between the two orthogonally polarized lasers was varied with the pump power caused by the polarized mode coupling. The longitudinal modes competition and the corresponding variable optical beats were also observed from the orthogonally polarized laser. We also adjusted the crystals with their c-axis parallele to each other, and a 40.7-W linearly polarized TEM₀₀ laser was obtained, and the beam quality factors were M²_x=1.37 and M²_y=1.25.     

Passively Q-switched Nd:GdVO4 laser with In0.25Ga0.75As being an output coupler

We report a diode-end-pumped passively Q-switched Nd:GdVO₄ laser operating at 1.06 μm with In_0.25Ga_0.75As being the saturable absorber as well as an output coupler. Q-switched pulses with a pulse duration of 20 ns, pulse energy 4.2 μJ and pulse repetition rate 200 kHz were produced, corresponding to peak power of 210 W.     

Laser diode pumped actively Q-switched Nd:GdVO4 self-Raman laser operating at 1173 nm

A laser diode pumped actively Q-switched Nd:GdVO₄ self-Raman laser operating at 1173 nm is presented. The maximum output power was 2.26 W at an incident pump power of 18 W, with the corresponding optical conversion efficiency of 12.6%. Two different resonator configurations were investigated in order to achieve high output power and efficiency.