Temperature dependence of the tunneling magnetoresistance for tunnel junctions

The temperature dependence of the tunneling magnetoresistance (TMR) for magnetic tunneling junctions is investigated experimentally before and after the sample is annealed. As grown, the TMR is observed to increase with temperature from 80 to 160 K. A modified Julliere model in conjunction with a spin-dependent two-step tunneling is suggested to describe this temperature dependence.     

Fe/ZnSe/Fe junctions: Interplay between interface structure and tunneling magnetoresistance

We investigate the electronic structure of Fe/ZnSe/Fe magnetic tunnel junctions for which interdiffusion and reconstruction at the interfaces are considered. Taking into account the ab initio potential profile throughout the different layers of the structure, we discuss about its implications on the tunnel conductance. Our results show that interface reconstruction drives changes in the electronic structure which, in turn, produce an increase of the kinetic energy of the conduction electrons, independently of their spin orientation. We suggest that this reconstruction underlies the low tunnel magnetoresistance (TMR), as it is observed in transport measurements when compared with the theoretical value estimated for sharp interfaces.     

Electrical conductance properties for magnetic tunnel junctions with MgO barriers

We measured inelastic electron tunneling (IET) spectra and conductance for MgO tunneling magnetoresistance (TMR) films to obtain information on the ferromagnetic/barrier layer interface. The IET spectra showed the difference between amorphous and crystalline structures in the barrier. In the magnetic tunnel junction (MTJ) with a crystalline barrier the IET spectra indicated an Mg-O phonon peak at a low bias voltage by measurement with a parallel magnetization configuration. On the other hand, no peak was observed in the MTJ with an amorphous barrier.     

Role of the interfacial state: a comparison of Co/Al2O3/NiFe and La0.7Ca0.3MnO3/Al2O3/La0.7Ca0.3MnO3 tunnel junctions

Two junctions of Co/Al₂O₃/NiFe (J₁) and La_0.7Ca_0.3MnO₃/Al₂O₃/La_0.7Ca_0.3MnO₃ (J₂) were prepared to compare their tunneling magnetoresistance (TMR) in consideration of interfacial state effects. The structural and transport properties of the layered samples were characterized by X-ray and magnetic measurements, showing indeed an interfacial state dependence. The influences such as from a CoO sublayer in J₁ and from interfacial coherence in J₂ were discussed. The largest TMR observed amounts to 16% (290 K) for J₁ and 65% (40 K) for J₂.     

Size effect of spin-polarized transport in FM/Single-walled carbon nanotube/FM junctions

We investigated theoretically in detail the size effect of spin-polarized transport in FM/Single-walled carbon nanotube/FM junctions (FM/SWCNT/FM) consisting of the achiral types of tubes: armchair tubes and zigzag tubes. The results show that the spin-polarized transport has different oscillation behaviors with the junction?s size in these two junctions. And the effect of tunnel magnetoresistance (TMR) in zigzag tube is stronger than that in armchair tubes. For all zigzag tubes when the size exceeds a limit the size effect on TMR disappears and TMR value reaches one maximum 20%. Furthermore, for each family of zigzag tubes, this limit of size increases with increasing tube?s radius. For short zigzag tubes the TMR can be negative at some special sizes. And the negative TMR value can reach −12%$-12\text{\%}$ at the angle π. Finally, except for the zero angel, the obtained results show that for all zigzag tubes the extremum of TMR is at the angle π  . For all armchair tubes, the TMR value has one oscillation of small amplitude with the increase of angle and it has two extrema: the maximum at π/2$\pi /2$ and the minimum at π, respectively.     

磁随机存储器中垂直电流驱动的磁性隧道结自由层的磁化翻转

在基于磁性隧道结(Magnetic Tunneling Junction，MTJ)的磁随机存储器(Magnetoresistantive Random Access Memory，MRAM)中利用通过MTJ的垂直电流，实现信息写入的新方法，同时给出了基于此新方法的一种新的MRAM结构和驱动原理图，并分析了它的读和写操作的可行性具体过程. 关键词： 垂直电流 磁性隧道结 磁随机存储器     

Observation of a tunneling magnetoresistance effect in magnetic tunneling junctions with a high resistance ferromagnetic oxide Fe2⋅5Mn0⋅5O4 electrode

A high resistance ferromagnetic oxide Fe_2⋅5Mn_0⋅5O₄ (FMO) property as a novel spin injector was investigated with a structure of a magnetic tunneling junction (MTJ) composed of FMO/Al-O/Ni₈₀Fe₂₀, in order to reduce an impedance mismatch problem on molecular spintronics. A tunneling magnetoresistance (TMR) effect in the MTJs was observed. The maximum TMR ratio observed in the MTJs was approximately 0.85% at room temperature (RT), and the spin-polarization of FMO was estimated to be at least 0.94% at RT.     

Effects of spin relaxation on electron tunneling through single discrete levels in magnetic tunnel junctions

Electron tunneling through a single discrete level of a quantum dot, coupled to two ferromagnetic leads, is studied theoretically in the sequential tunneling regime. Electron correlations and spin relaxation processes on the dot are taken into account. It is shown that strong Coulomb correlations can enhance tunnel magnetoresistance in a certain bias range. The effect, however, is suppressed by spin-flip processes.     

Morphology, magnetic, magnetoresistance and optical properties of Co-Ni-Mo alloys thin films

We present in this paper several results concerning the preparation by means of electrolysis and characterization of Co-Ni-Mo thin films. Co-Ni-Mo thin films with different molybdenum content in the range 0-25 at% Mo were prepared from a complex solution containing ions of Co, Ni and Mo, using galvanostatic control, on aluminum substrates. The effects of applied current density on the morphology, magnetic, magnetoresistance, and optical properties of the electrodeposited Co-Ni-Mo films were investigated. The applied current density significantly influenced the film composition and their magnetic properties. The increase of molybdenum content in Co-Ni films (up to 25 at% Mo) enhances the resistivity, but it reduces the magnetoresistance effect. We report the first observation of magnetoresistance as high as 8% in Co-Ni-Mo thin films.     

Influence of quantum well states on transport properties of double barrier junctions

A strong asymmetric behavior in the I–V characteristics and the tunnel magnetoresistance in asymmetric magnetic double-barrier junctions is predicted. This effect relates to formation of quantum well states in the middle metallic layer. The influence of the random fluctuations of the barrier and the middle metallic layer thickness on the statistics of resonant levels is investigated.     

Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures

Because of the wide selectivity of ferromagnetic and ferroelectric (FE) components, electric-field (E-field) control of magnetism via strain mediation can be easily realized through composite multiferroic heterostructures. Here, an MgO-based magnetic tunnel junction (MTJ) is chosen rationally as the ferromagnetic constitution and a high-activity (001)-Pb(Mg$_{1/3}$Nb$_{2/3}$)$_{0.7}$Ti$_{0.3}$O$_{3}$ (PMN-0.3PT) single crystal is selected as the FE component to create a multiferroic MTJ/FE hybrid structure. The shape of tunneling magnetoresistance (TMR) versus in situ E-fields imprints the butterfly loop of the piezo-strain of the FE without magnetic-field bias. The E-field-controlled change in the TMR ratio is up to $-$0.27% without magnetic-field bias. Moreover, when a typical magnetic field ($\sim \pm 10$ Oe) is applied along the minor axis of the MTJ, the butterfly loop is changed significantly by the E-fields relative to that without magnetic-field bias. This suggests that the E-field-controlled junction resistance is spin-dependent and correlated with magnetization switching in the free layer of the MTJ. In addition, based on such a multiferroic heterostructure, a strain-gauge factor up to approximately 40 is achieved, which decreases further with a sign change from positive to negative with increasing magnetic fields. This multiferroic hybrid structure is a promising avenue to control TMR through E-fields in low-power-consumption spintronic and straintronic devices at room temperature.     

Structural, magnetic and transport properties of double perovskite compounds (Sr2−3xLa2xBax)FeMoO6

The crystal structure and magnetic properties of a series of ordered double perovskite oxides (Sr_2−3xLa_2xBa_x)FeMoO₆ (0x0.3) have been investigated. X-ray powder diffraction reveals that the crystal structure of the compounds changes from a tetragonal I4/m lattice to a cubic lattice around x=0.2. Though the nominal average size of the A site cation of (Sr_2−3xLa_2xBa_x)FeMoO₆ is designed to be almost independent of x, the refinements of the crystal structure show that the lattice constants increase with x in both the tetragonal and the cubic phase regions due to electron doping. As the x increases, the degree of cationic ordering on the B site is decreased pronouncedly, while the Curie temperature of the compounds is nearly unchanged. The saturation magnetization of the compounds decreases with x and shows a linear dependence on the degree of cation ordering. The resistivity of the parent compound shows a semiconducting behavior below room temperature, but those of the doped samples exhibit a metal–semiconductor transition. A correlation between the resistivity and metal-semiconducting transition temperature (T_M−S) is observed. The resistivity and T_M−S of the compounds decrease with x for x0.2 and increase for x0.2. Magnetoresistance of the compounds is reduced by the La/Ba doping. All these observations can be understood based on the interplay of the electron doping, change in bandwidth and the anti-site defect concentration.     

双势垒磁性隧道结的磁电阻效应及其在自旋晶体管中的应用

利用磁控溅射方法沉积双势垒磁性隧道结多层膜, 其中Al-O势垒层由等离子体氧化1 nm厚的 金属铝膜方式制备，然后采用深紫外光曝光和Ar离子刻蚀技术、微加工制备出长短轴分别为 6和3 μm大小的椭圆形双势垒磁性隧道结（DBMTJ），并在室温和低温下对其自旋电子输运 特性进行了研究. DBMTJ的隧穿磁电阻(TMR)比值在室温和42 K分别达到27％和423％， 结电阻分别为136 kΩ·μm²和175 kΩ·μm²，并在实验中观 察到平行状 态下存在低电阻态及共振隧穿效应，反平行态下呈现高电阻态以及TMR随外加偏压或直流电 流的增加而发生振荡现象. 由此，设计了一种基于这种双势垒磁性隧道结隧穿特性的自旋晶 体管. 关键词： 双势垒磁性隧道结 隧穿磁电阻 共振隧穿效应 自旋晶体管     

Magnetoresistive measurement of switching behavior in nano-structured magnetic dot arrays

In the present study, geometrical and thermal effects in a mesoscopic magnetization reversal process have been studied on a novel nano-structure of magnetic relief dot with magnetoresistive measurements. Only the top layer of a substrate/CoPt(10 nm)/Cu(10 nm)/NiFe(6, 12 nm) film was structured into rectangular dots with various lengths (L) and widths (W) down to 0.2 μm. Coercive fields of NiFe relief dots (W=0.2 μm) systematically decrease with the decrease of L/W, as predicted from demagnetizing factors in single domain particle. About 50% reduction of H_c due to a temperature rise, from 5 to 300 K, demonstrates considerable thermal activation in the magnetization reversal of nano-structured magnetic particles.     

Oxidation process of Mg films by using high-concentration ozone for magnetic tunnel junctions

Ozone oxidization process of metal Mg film for the barrier formation in magnetic tunnel junctions (MTJs) is investigated. Ozone exposure method is expected to oxidize ultra-thin metal films more mildly than with the plasma oxidization method, since the energy level of atomic oxygen is ∼2 eV lower in the ozone method than in the plasma method. The main results were as follows: (1) In the case of ozone oxidation, the diffusion coefficient of oxygen in the insulator is much smaller than that in plasma oxidation. (2) Mg–O film thickness, which is formed by reaction immediately on the metal Mg surface, is thicker as compared with the Al case. (3) In the ozone oxidation method of metal films with the thickness of more than the film thickness formed by reaction, the oxidation is spontaneously stopped at the interface to the bottom Co–Fe. As a result, we succeeded in inducing a TMR ratio of 25% at room temperature in MTJs with Mg(1.3 nm)–O barrier with wider exposure range than in the plasma case.     

Theoretical study of the relation between interfacial imperfection and transport properties in magnetic tunnel junctions

The ab initio electronic structure of model Co/Al₂O₃ heterojunctions with varying interface quality is investigated. It is evidenced that the metal-induced gap states determine the position of the Fermi level relative to the bottom of the conduction band which defines the effective barrier height for tunnel transport. This introduces a new origin for barrier height fluctuations related to the interfaces.     

双势垒磁性隧道结中量子阱共振隧穿效应的第一性原理理论

磁性隧道结材料中自旋相关的量子阱态所导致的共振隧穿现象具有很重要的研究和应用价值.文章介绍了最近在Fe(001)/MgO/Fe/MgO/Fe双势垒磁性隧道结中存在的量子阱共振隧穿效应的理论研究工作.通过量子阱态的第一性原理的计算以及结合对中间Fe薄膜孤岛结构所导致Coulomb阻塞效应的分析,证实了最近Nozaki等人(Nozaki T et al. Phys. Rev. Lett., 2006,96:027208 )实验中得到的振荡效应确实来源于中间Fe层多数自旋电子在Γ点处形成的Δ1对称性的量子阱态.     

双势垒磁性隧道结中量子阱共振隧穿效应的第一性原理理论

磁性隧道结材料中自旋相关的量子阱态所导致的共振隧穿现象具有很重要的研究和应用价值，文章介绍了最近在Fe（001）／MgO／Fe／MgO／Fe双势垒磁性隧道结中存在的量子阱共振隧穿效应的理论研究工作，通过量子阱态的第一性原理的计算以及结合对中间Fe薄膜孤岛结构所导致Coulomb阻塞效应的分析，证实了最近Nozaki等人（Nozaki T et al．Phys．Rev．Lett．，2006，96：027208）实验中得到的振荡效应确实来源于中间Fe层多数自旋电子在Г点处形成的△1对称性的量子阱态．Coulomb阻塞效应的存在正是导致实验中低温下量子阱共振隧穿效应不够明显的主要原因．     

Enhancement of magnetic coercivity in Fe/Mn and Co/Mn bilayers

The dependence of the coercive field and saturated magnetization on the interfacial width is studied to understand the driving mechanism of the coercive enhancement in Fe/Mn and Co/Mn bilayers. We establish a controlled annealing procedure to reveal the origin of this enhancement. Using a model, we reveal that the full interfacial width plays a keyrole, and that no Mn based finite size effects drive the mechanism. We show that this mechanism is common to both type of bilayers.     

Film thickness dependence of the magnetic resonance in Fe–SiO2 nanocomposites

The magnetic properties of Fe–SiO₂ nanogranular composite thin films were studied as a function of film thickness and Fe concentration, f, using ferromagnetic resonance at X-band (9.4 GHz) and Q-band (35 GHz). Films with an Fe volume percent ranging from 17% to 70% were fabricated from a mosaic target using RF sputtering techniques. Film thickness was varied between 10 and 200 nm. From measurements made at room temperature with the external field applied parallel and perpendicular to the film plane, it was possible to determine an almost linear dependence of the effective anisotropy field with Fe concentration. Small differences observed between X- and Q-band, specially at low f, were attributed to the effects that the different fields applied during the experiment cause on the magnetic state of the sample. No systematic change of the effective field or the g value was observed in films of different thickness. The absorption line width, on the other hand, was found to depend on film thickness indicating a larger distribution of particle shape and size with increasing film thickness. A maximum in the line width was observed around f30–35% and is probably caused by the transition from single domain ferromagnetic clusters to superparamagnetic particles.