DDAB修饰纳米氧化锌的合成及XANES研究

用改进的反胶束法合成了半导体纳米级氧化锌,表面由DDAB(双十二烷基二甲基溴化铵)修饰.改进的方法与传统方法的区别是反胶束法中所需要的水是由含水的锌盐直接提供,在有机溶剂中直接形成了微反应池.TEM(透射电子显微镜)照片证实了氧化锌的尺寸为纳米级,其粒径可由锌盐和DDAB的使用量之比来控制.并用基于北京同步辐射的X射线吸收近边结构谱来研究纳米材料的表面结构重组和畸变性质等.     

现代实验室型X射线荧光元素分布成像和形态分析技术的研究进展

近年来,随着X射线光源、单色、聚焦及探测系统的发展,在实验室可借助低功率X射线光源开展X射线荧光(XRF)和X射线吸收谱(XAS)分析.液体金属射流源等新型X射线光源系统、闭合反馈系统、电荷耦合元件和方孔微通道板等技术和计算方法的进步促进了聚焦扫描型、全场型和XRF计算机断层扫描等实验室型XRF元素空间成像技术的发展....     

表面热处理研究石墨及含杂质单壁碳纳米管的C 1s X射线吸收谱

用表面敏感光电子能谱全电子产额模式(TEY)对石墨及含杂质单壁碳纳米管的C 1s X射线吸收谱进行了研究.在高真空里表面退火处理后,石墨C 1s X射线吸收谱中未占据π^{*和σ*态特征峰之间的小峰消失,证实此峰不是来自于一直被认为的所谓的类自由电子态,而来自于样品表面态,即表面结构扭曲或吸附气体所引起的结构变化.而且π*和σ*峰强度有明显的变化,提示着在研究不同纳米管未占据态的态密度对比研究中,原位温度处理是关键的.我们通过对含杂质不同单壁碳纳米管的态密度对比研究来说明这种处理过程的必要性.}     

La0.8Sr0.2Co1-xFexO3材料局域结构的研究

采用溶胶-凝胶法制备了La0.8Sr0.2Co1-xFexO3样品,并测量了各样品的X射线衍射谱（XRD）和X射线吸收精细结构（XAFS）谱。XRD分析研究发现Fe的掺杂引起了La0.8Sr0.2CoO3材料相分离;在前期对X射线吸收精细结构谱近边分析的基础上,进一步分析扩展边X射线吸收精细结构谱,表明在La0.8Sr...     

神光Ⅱ间接驱动内爆实验ArX射线谱线模拟研究

ICF内爆物理研究中,示踪元素X射线谱诊断方法是推测内爆压缩温度、 密度以及燃料混合状态的有效方法.针对其中的非平衡物理过程, 研制了非局域热动平衡(non-LTE)下一维谱线输运程序Alpha.程序以辐射流体计算给出的温度、 密度等量为输入条件,求解细致组态(DCA)模型下的原子动力学方程和辐射输运方程, 自洽给出谱线不透明度,和成像面上的X射线谱分布.
利用该程序,模拟了神光Ⅱ装置上的掺Ar靶丸内爆示踪元素X射线谱诊断实验, 研究结果表明,谱线的自吸收效应影响发射的X射线谱的强度和形状, 谱线的宽度对自吸收效应的强弱也有影响.因此,在对X射线谱的数值模拟中应该考虑自吸收效应. 另外,与LTE近似下的发射谱的比较表明, LTE近似下,等离子体电离度大～1, 发射谱的形状与non-LTE的结果不同,且LTE近似下,谱线的强度比non-LTE的谱线强度大5-10倍, 采用LTE近似是不合适的.     

Zn1-xCoxO稀磁半导体薄膜的结构及其磁性研究

利用X射线吸收精细结构、X射线衍射和磁性测量等技术研究脉冲激光气相沉积法制备的Zn1-zCoxO(x=0.01,0.02)稀磁半导体薄膜的结构和磁性.磁性测量结果表明Zn1-xCoxO样品都具有室温铁磁性.X射线衍射结果显示其薄膜样品具有结晶良好的纤锌矿结构.荧光X射线吸收精细结构测试结果表明,脉冲激光气相沉积法制备的样品中的Co离子全部进入ZnO晶格中替代了部分Zn的格点位置,生成单一相的Zn1-xCoxO稀磁半导体.通过对X射线吸收近边结构谱的分析,确定Zn1-xCoxO薄膜中存在O空位,表明Co离子与O空位的相互作用是诱导Zn1-xCoxO产生室温铁磁性的主要原因.     

软X射线荧光吸收谱测试方法的建立与应用

提出了一种软X射线荧光吸收谱测试方法。该方法克服了软X射线荧光产率低的问题,消除了荧光自吸收效应,采用部分荧光产额模式获得了材料的软X射线近边吸收结构。使用部分荧光产额模式对钙钛矿太阳能电池的埋藏元素、催化剂的低浓度元素,以及宽禁带半导体进行软X射线近边吸收谱研究。相比全电子产额模式,基于荧光产额模式的软X射线近边吸收结构在材料体相特性、不良导体和低浓度样品测试中更具优势。     

封面说明

近几年 ,X射线位相衬度成像技术引起国际上材料、生物、医学等领域的广泛关注 ,也是国际同步辐射装置上研究的热点之一 .该方法建立在X射线折射效应基础上 ,可用于以轻元素为基的材料内部结构的成像研究 ,弥补传统X射线吸收成像的不足 .其独特优势是 :空间分辨率在 μm量级 ,增强弱吸收特征衬度 ,具有对细胞成像能力 ;在硬X射线范围内 ,辐射剂量远小于吸收衬度成像 .它为材料科学、生物医学等领域提供了一个新的重要手段 .北京同步辐射装置 (BSRF)于 2 0 0 1年 6月在国内首次开展了该方面研究 ,发展了同步辐射相位衬度X射线照相术 (成像…     

X射线衍射增强成像中吸收、折射以及散射衬度的计算层析

X射线相位衬度成像是一种新型的X射线成像技术,通过记录射线穿过物体后相位的改变对物体进行成像,可以提供比传统的X射线吸收成像更高的图像衬度以及空间分辨力。衍射增强成像方法(Diffraction enhancedimaging,DEI)是X射线相位衬度成像方法之一,利用一块放置在物体和探测器之间的分析晶体提取物体的吸收、折射以及散射信息并进行成像。将衍射增强成像方法与计算机断层成像技术(Computerized Tomography)进行结合,利用吸收、散射以及折射信息,分别采用滤波反投影以及雷登(Radon)变换,对昆虫样品——蜜蜂进行计算层析重建,获得了好于X射线吸收计算层析的重建结果,验证了衍射增强成像信息分离计算层析的优越性。     

X射线光谱在文物无损分析中的研究进展

文物遗存是人们认识历史发展的重要依据,通过对它们的相关研究可以了解古人的生存方式、生产技能、人与自然的关系等。X射线光谱（X射线荧光光谱和X射线吸收精细结构谱）作为重要的无损分析方法,可以用来研究物质内部元素组成和特定元素近邻结构等信息,为文物的保护研究和价值认知等提供支撑,目前被广泛应用于各种古代物质遗存的研究工作中。对近些年X射线光谱在不同类型文物研究中的应用情况进行简要的总结和介绍。总的来看,X射线荧光光谱技术在古陶瓷、油画、青铜器的断源断代研究方面发挥了重要作用,而基于X射线荧光光谱的成分数据库建设和X射线吸收精细结构谱在文物研究相关问题的深度介入是应用实践中的难点,也应是未来研究工作中的重要课题。     

X-ray absorption spectroscopy in total electron yield mode of scanning photoelectron microscopy

Total electron yield (TEY) measurement was applied to the scanning photoelectron microscopy (SPEM). The resultant image showed the thickness variation of a zinc overlayer deposited on an iron substrate with 18 nm nominal thickness. The contrast and signal-to-noise ratio of the image were much higher than those of the images obtained by the conventional SPEM. When the order-sorting aperture (OSA) located between the Fresnel zone plate and the sample was biased to +80 V relative to the sample, the contrast of the image was further improved. It also made it possible to perform microscopic X-ray absorption spectroscopy in TEY mode by preventing the unwanted photoelectrons emitted from the OSA, which can cause false TEY, from reaching the sample. Oxidized areas of the iron substrate under the thick zinc overlayer were clearly identified.     

X-ray absorption study of light emitting silicon nanocrystals

X-ray absorption spectra obtained by total electron yield (TEY) at the Si absorption K-edge have been measured to have chemical and structural information about Si nanocrystals (Si-nc) produced by plasma-enhanced chemical vapour deposition (PECVD). The TEY technique has been employed to investigate the formation of Si-nc and the modification of the silica matrix as a function of annealing temperature (500–1250°C) and of silicon content in the film (35–46 at%). The amount of silicon present in the Si-nc has been evaluated by TEY. Thanks to Rutherford backscattering spectrometry measurements, the amount of Si atoms bonded to oxygen and to nitrogen, incorporated by PECVD, has been assessed. A compositional model that interprets the experimental findings is presented.     

Local order in light emitting porous silicon studied by XEOL and TEY

The local structure of porous silicon has been studied exciting its optical luminescence by X-rays (XEOL). The photoluminescence yield and the total electron yield (TEY), recorded simultaneously as a function of the X-ray energy at the Si K edge, give rise to the extended X-ray absorption fine structures (EXAFS). Analysis of EXAFS data confirms that the optical luminescence of porous Si originates from the nanocrystalline cores and shows that XEOL–EXAFS and TEY–EXAFS are sensitive to different Si local environment. It can be assumed that XEOL–EXAFS is related only to the light emitting sites while TEY–EXAFS is sampling both luminescent and non-luminescent Si sites.     

Reflective phase shift measurement of the Mo/Si multilayer mirror in extreme ultraviolet region

The reflective phase shift of multilayer mirror is one important property required in EUV lithography and attosecond pulses experiments. The reflective phase shift of the periodic Mo/Si multilayer mirror was characterized by combining the reflectivity with total electron yield signal at the synchrotron radiation in Hefei. The multilayer was fabricated using direct current magnetic sputtering method. Using the wavelet transform approach, the period and each layer thickness were obtained, the small angle X-ray reflective data from X-ray diffractometer were fitted using these data as the mutilayer's initial structure. The TEY signal of the multilayer is coincided with the surface electron field of the multilayer. A thick Si layer was used to eliminate the effect of the multilayer's surface layer on the TEY signal. The retrieved difference in reflected phase from the incident phase was obtained combining the reflectivity with the total electron yield signal and it is similar with the calculated phase shift of the multilayer.     

Inner shell excitation and dissociation of condensed formamide

Carbon and nitrogen K-shell excitation and dissociation of condensed formamide at 96 K were studied by near edge X-ray absorption fine structure (NEXAFS) recorded by total electron yield (TEY), total ion yield (TIY) and photon-stimulated desorption (PSD) yield of H⁺ measurements. It was found that electronic transitions from the C 1s or the N 1s to the σ¹ (CH and/or NH) enhanced ion yields of H⁺ from the CH and/or NH functional groups. This selective dissociation indicates that the corresponding unoccupied molecular orbital has an antibonding character of the CH and/or NH. To investigate the molecular orientation of condensed formamide, incidence-angle-dependent TEY-NEXAFS spectra were measured. The CNO plane of the adsorbed formamide molecule is determined to be tilted away from the surface by an averaged angle of about 42°.     

Compaction of nanodiamonds produced under detonation conditions and properties of composite and polycrystalline materials made on their basis

It is believed that materials based on ultrafine (nanoscale) diamond powders can possess high-level physical-mechanical and performance parameters characteristic of a nanocrystalline state. In certain cases, however, conventional methods for compacting ultrafine-dispersed diamonds (UDDs) fail and cannot be used to fabricate materials with desired properties. The difficulties associated with the ultrafine-dispersed state of the initial diamond powders can be surmounted by modifying the chemical and phase composition of the UDD surface. The possible use of UDDs as a catalyst that is conductive to the occurrence of chemical and phase transformations in certain substances at high pressures is analyzed. Sintering UDDs in the region of metastability of diamond makes it possible to produce porous polycrystalline aggregates with large specific surface area and very hard transparent particles.     

XAS and XPS examination of the Au–S nanostructures produced via the reduction of aqueous gold(III) by sulfide ions

The S L- and Au L₃-edge X-ray absorption fine structure and X-ray photoelectron spectra of nanoscale Au–S products formed via the reduction of aqueous HAuCl₄ by sulfide ions and immobilized onto graphite have been acquired. The TEY XANES and XPS spectra implied the formation of predominant polysulfide species and metallic gold, while the transmission spectra showed Au–S bonding, the share of which increased with increasing molar Na₂S/HAuCl₄ ratio in the reaction solution. The Au–S distances derived from EXAFS analysis changes from 2.31 Å to 2.325 Å with the concentration of sodium sulfide in solution, being longer than that for cuprite-type crystalline Au₂S (2.174 Å). It has been concluded from all the evidence that the surface of gold sulfide decomposes in air and in ultra-high vacuum even before X-ray irradiation.     

An experimental comparison of the total-electron-yield and conversion-electron-yield modes for near-surface characterization using X-ray excitation

The electron yield technique is a very useful method for studying near-surface information of a thick sample because of the shallowness of the electron escape depth. In the present study, the glancing-angle dependence of the total electron yield (TEY) and the conversion electron yield (CEY) was measured at a 13 keV photon energy. It was found that the signal intensity in the CEY mode was larger than that for the TEY mode because air molecules are ionized by high-energy electrons emitted from the sample to form ion-electron pairs in air at atmospheric pressure. In addition, the probing depth for the TEY mode was found to be shallower than that for the CEY mode. The difference is due to the relative contribution of low-energy electrons emitted from the sample in the CEY mode being smaller than in the TEY mode. Thus high-energy electrons are selectivity detected in the CEY mode. Estimates for the value of the probing depth of the TEY and CEY modes are given from calculations.     

Effect of titanium powder assisted surface pretreatment process on the nucleation enhancement and surface roughness of ultrananocrystalline diamond thin films

A superior, easy and single-step titanium (Ti) powder assisted surface pretreatment process is demonstrated to enhance the diamond nucleation density of ultrananocrystalline diamond (UNCD) films. It is suggested that the Ti fragments attach to silicon (Si) surface form bond with carbon at a faster rate and therefore facilitates the diamond nucleation. The formation of smaller diamond clusters with higher nucleation density on Ti mixed nanodiamond powder pretreated Si substrate is found to be the main reason for smooth UNCD film surface in comparison to the conventional surface pretreatment by only nanodiamond powder ultrasonic process. The X-ray photoelectron spectroscopic study ascertains the absence of SiC on the Si surface, which suggests that the pits, defects and Ti fragments on the Si surface are the nucleation centers to diamond crystal formation. The glancing-incidence X-ray diffraction measurements from 100 nm thick UNCD films evidently show reflections from diamond crystal planes, suggesting it to be an alternative powerful technique to identify diamond phase of UNCD thin films in the absence of ultra-violet Raman spectroscopy, near-edge X-ray absorption fine structure and transmission electron microscopy techniques.     

Gd_2O_3:Eu透明厚膜的制备及其发光特性

以无机稀土氧化物为原料、2-甲氧基乙醇为溶剂、PVP为胶粘剂、PEG200为有机分散剂,采用溶胶-凝胶工艺成功制备出Gd2O3∶Eu3+透明闪烁薄膜。通过2次涂复,薄膜厚度达到了1.5μm,膜层均匀、无散射颗粒、无裂纹,可见光区的透射率约为80%。研究表明PVP在厚膜烧结过程中可以松弛膜的结构、减小应力的出现,避免厚膜开裂,同时还可以提高溶胶的粘度,在厚膜制备中起到了关键作用。此外,我们还研究了Gd2O3∶Eu3+闪烁薄膜的激发、发射和发光衰减时间谱,结果表明,该薄膜发光性能优良,可初步满足X射线成像用闪烁薄膜的要求。