基于阻性阳极读出方法的气体电子倍增器二维成像性能

新型微结构气体探测器,如气体电子倍增器(gas electron multiplier,GEM)等,具有非常好的位置分辨率潜力(σ100μm),但是需要匹配大规模高密度的读出电子学,给探测器的建设、造价、功耗、空间利用等带来极大压力.阻性阳极读出方法可以在保持较高位置分辨率的前提下,大幅节省电子学.基于厚膜电阻工艺,一种新的阻性单元阵列结构被成功开发和应用于三级级联GEM探测器的读出阳极.该阻性阳极包括6×6个6 mm×6 mm的基本阻性单元,仅需匹配49路读出电子学.~(55)Fe放射源(5.9 keV)和X光机(8 keV)实验的结果显示探测器的位置分辨率(σ)可好于80μm,位置非线性好于1.5%.同时,探测器还获得了很好的实物成像效果.探测器的优良性能表明这种阻性阳极读出方法适用于大面积二维成像气体探测器的读出,并可用于其他探测器的读出.     

Micromegas探测器计数曲线、增益以及能量分辨特性的研究

介绍了自行研制的Micromegas探测器的基本结构和工作原理. 在不同工作气体(Ar和CO₂)配比条件下,利用⁵⁵Fe放射源对该探测器的能量分辨、计数曲线和气体增益等特性进行了较为详尽的测试. 对相关结果进行了讨论. 关键词： Micromegas探测器 计数曲线 能量分辨率 增益     

Analysis and modeling of resistive switching mechanisms oriented to resistive random-access memory

With the progress of the semiconductor industry,the resistive random-access memory(RAM) has drawn increasing attention.The discovery of the memristor has brought much attention to this study.Research has focused on the resistive switching characteristics of different materials and the analysis of resistive switching mechanisms.We discuss the resistive switching mechanisms of different materials in this paper and analyze the differences of those mechanisms from the view point of circuitry to establish their respective circuit models.Finally,simulations are presented.We give the prospect of using different materials in resistive RAM on account of their resistive switching mechanisms,which are applied to explain their resistive switchings.     

Analysis and modeling of resistive switching mechanism oriented to fault tolerance of resistive memory based on memristor

With the progress of the semiconductor industry, resistive memories, especially the memristor, have drawn increasing attention. The resistive memory based on memrsitor has not been commercialized mainly because of data error. Currently, there are more studies focused on fault tolerance of resistive memory. This paper studies the resistive switching mechanism which may have time-varying characteristics. Resistive switching mechanism is analyzed and its respective circuit model is established based on the memristor Spice model.     

Diffraction of electromagnetic waves by a resistive half-plane in magneto-ionic plasma

The interaction of magnetic polarized electromagnetic wave with a resistive half-plane in magneto-ionic plasma is investigated. The method of transition boundary is used for the evaluation of the diffracted wave. The excitation of surface waves is examined in the medium and their diffracted fields are derived by using the diffraction theory for grazing incidence. The uniform field expressions are obtained with the aid of the uniform theory for evanescent waves. The behaviours of the derived scattered waves are studied numerically.     

Performances of RETGEM with resistive electrodes made of kapton foils

THGEM with resistive Kapton electrodes (RETGEM) has been developed to make the THGEM more tolerant to discharges. At higher gains with resistive electrodes, serious discharges may travel to the streamer mode, in contrast to violent sparks in conventional GEMs. These streamers are mild and less dangerous to the detector and the front-end electronics. RETGEM looks very promising, and its basic properties are being studied. Recently we developed and tested the THGEM with electrodes using 20 um thick resistive kapton foils. The new RETGEM performs at a lower discharge current, has a lower discharge probability, and has a good energy resolution of 27% and a high effective gas gain and long-term stability.     

3D simulation of micromegas detector performance

Micromegas (MICRO MEsh GAseous Structure) is a position-sensitive gaseous detector. It is widely used in particle physics. We present the results of full 3D Monte Carlo simulations of Micromegas performance, taking into account all the processes from the primary ionization, the elctron collection efficiency,and the gain to the signal formation. The simulation results are in good agreement with experimental data.     

氧化钒薄膜的微结构及阻变特性研究

采用射频反应溅射法于室温下在Cu/Ti/SiO₂/Si基底上制备了氧化钒薄膜. X-射线衍射、X射线光电子能谱分析仪及原子力显微镜结果表明, 室温下制备的氧化钒薄膜除微弱的V₂O₅ (101)和V₂O₃ (110)峰外, 没有明显的结晶取向, 是VO₂, V₂O₅, V₂O₃及VO的混合相薄膜, 且薄膜表面颗粒大小均匀, 表面均方根粗糙度约为1 nm. 采用半导体参数分析仪对薄膜的电开关特性进行测试. 结果表明薄膜具有较低的开关电压(V_Set<1 V, V_Reset<-0.5 V), 并且具有稳定的可逆开关特性. 薄膜从低阻态转变为高阻态的电流(I_Reset)随限流的增大而增大.通过高低阻态时I-V对数曲线的拟合(高阻态斜率>1, 低阻态斜率=1), 认为Cu离子在薄膜中扩散形成的导电细丝是该体系发生电阻转变的主要机制. 关键词： 氧化钒薄膜 电阻开关 电阻式非挥发存储器 导电细丝     

A low-frequency wideband metamaterial absorber based on a cave-disk resonator and resistive film

A low-frequency wideband, polarization-insensitive and wide-angle metamaterial absorber (MA) is designed, simulated and analyzed. This MA consists of a periodic arrangement of a cave-disk resonator (CDR), square resistive film (RF), and metal ground plane (GP) (a 0.8 mm-thick FR-4 dielectric spacer is sandwiched in between the CDR and RF, and another 1.2-mm thick FR-4 dielectric spacer is inserted in between the RF and GP). The simulated results based on finite integration technology (FIT) indicate that the absorption of the MA is greater than 90% and almost perfectly impedance- matched to the free space in the whole frequency range of 1 GHz-7 GHz. The simulated absorptions under the conditions of different polarization and incident angles indicate that this composite structure absorber is polarization-insensitive and wide-angled. Furthermore, the distribution of the power loss density indicates that the wideband absorptivity is mainly from the composite electromagnetic loss of the CDR and RF. This design provides an effective and feasible way to construct a low-frequency wideband absorber.     

Atomic crystals resistive switching memory

Facing the growing data storage and computing demands, a high accessing speed memory with low power and non volatile character is urgently needed. Resistive access random memory with 4F~2 cell size, switching in sub-nanosecond cycling endurances of over 10~(12) cycles, and information retention exceeding 10 years, is considered as promising nex generation non-volatile memory. However, the energy per bit is still too high to compete against static random acces memory and dynamic random access memory. The sneak leakage path and metal film sheet resistance issues hinder th further scaling down. The variation of resistance between different devices and even various cycles in the same device hold resistive access random memory back from commercialization. The emerging of atomic crystals, possessing fin interface without dangling bonds in low dimension, can provide atomic level solutions for the obsessional issues. Moreove the unique properties of atomic crystals also enable new type resistive switching memories, which provide a brand-new direction for the resistive access random memory.     

Gas treatment protection of metallic lithium anode

The effects of different coating layers on lithium metal anode formed by reacting with different controlled atmospheres(argon,CO_2–O_2(2:1),N_2,and CO_2–O_2–N_2(2:1:3))have been investigated.The obtained XRD,second ion mass spectroscopy(SIMS),and scanning probe microscope(SPM)results demonstrate the formation of coating layers composed of Li_2CO_3,Li_3N,and the mixture of them on lithium tablets,respectively.The Li/Li symmetrical cell and Li/S cell are assembled to prove the advantages of the protected lithium tablet on electrochemical performance.The comparison of SEM and SIMS characterizations before/after cycles clarifies that an SEI-like composition formed on the lithium tablets could modulate the interfacial stabilization between the lithium foil and the ether electrolyte.     

3D simulation of micromegas detector performance

Micromegas （MICRO MEsh GAseous Structure） is a position-sensitive gaseous detector. It is widely used in particle physics. We present the results of full 3D Monte Carlo simulations of Micromegas performance, taking into account all the processes from the primary ionization, the elctron collection efficiency, and the gain to the signal formation. The simulation results are in good agreement with experimental data.     

基于ITO/聚甲基丙烯酸甲酯/Al的有机阻变存储器SPICE仿真

探索了ITO/PMMA/Al器件的阻变机理及其SPICE电路仿真, 通过优化聚甲基丙烯酸甲酯(PMMA)层退火温度, 器件可实现连续擦-读-写-读操作. 基于不同退火温度PMMA薄膜的表面形貌研究, 构建了单层有机阻变器件的非线性电荷漂移模型, 以及描述该模型掺杂区界面移动的状态方程, 并通过反馈控制积分器建立了SPICE仿真电路. 最后, 代入器件实际测量参数, 得到与器件实际结果基本一致的电流-电压模拟曲线. 结果验证了单层有机器件的阻变机理, 说明该非线性电荷漂移模型的SPICE仿真在有机阻变器件仿真中同样适用. 关键词： 有机阻变存储器 非线性电荷漂移 SPICE仿真     

双阳极磁控注入枪束流特性的研究

 介绍了用于34GHz基波回旋速调管的双阳极磁控注入枪的结构特点，为了准确分析磁控注入枪的束流特性，建立了阴极表面理论模型，用新编制的程序模拟了电子轨迹。模拟和测量结果显示磁场对磁控注入枪的束流有影响，磁控注入枪的束流也与阴极温度和空间电荷效应有关系。     

双阳极磁控注入枪束流特性的研究

介绍了用于34GHz基波回旋速调管的双阳极磁控注入枪的结构特点,为了准确分析磁控注入枪的束流特性,建立了阴极表面理论模型,用新编制的程序模拟了电子轨迹。模拟和测量结果显示磁场对磁控注入枪的束流有影响,磁控注入枪的束流也与阴极温度和空间电荷效应有关系。     

Tokamak resistive magnetohydrodynamic ballooning instability in the negative shear regime

Improved confinement of tokamak plasma with central negative shear is checked against the resistive ballooning mode. In the negative shear regime, the plasma is always unstable for purely growing resistive ballooning mode. For a simplest tokamak equilibrium model, the s--α model, characteristics of this kind of instability are fully clarified by numerically solving the high n resistive magnetohydrodynamic ballooning eigen-equation. Dependences of the growth rate on the resistivity, the absolute shear value, the pressure gradient are scanned in detail. It is found that the growth rate is a monotonically increasing function of α while it is not sensitive to the changes of the shear s, the initial phase \ta₀ and the resistivity parameter \va_R.     

GEANT4 simulation of gamma ray in a double-gap resistive plate chamber

For more than 20 years nuclear physicists have used the GEANT code to simulate particle-matter interaction. In most recent version, GEANT4 is a toolkit for simulating the passage of particles though matter, which contains a complete range of functionality including tracking, geometry, physics models, and hits. In this article, an attempt to use GEANT4 to model a double-gap resistive plate chamber （RPC） with its improved efficiency is presented. The efficiencies of the double-gap RPC have been evaluated as a function of gamma energy range 0.005-1000MeV. A comparison to available previous simulation package GEANT3 data is also performed.     

Volt-ampere characteristics of a nitrogen DC plasma arc with anode melting

The characteristics of a nitrogen arc using a graphite cathode and a melting anode in a pilot-scale plasma furnace are investigated. The voltage is examined as a function of current and apparent plasma length. The voltage increases non-linearly with the increase of apparent plasma length, with the current fixed. The experimental data so obtained are compared with the predictions of the Bowman model for the electric arc, and with numerical simulations as well. The level of agreement between the experimental data at the melting anode and the numerical predictions confirms the suitability of the proposed the Bowman model. These characteristics are relevant to the engineering design and evaluation of a DC plasma furnace and reactor for the treatment of hazardous fly ash waste.     

Analysis of the resistive switching behaviors of vanadium oxide thin film

We demonstrate the polarization of resistive switching for a Cu/VOx/Cu memory cell.The switching behaviors of Cu/VOx/Cu cell are tested by using a semiconductor device analyzer(Agilent B1500A),and the relative micro-analysis of I-V characteristics of VOx/Cu is characterized by using a conductive atomic force microscope(CAFM).The I-V test results indicate that both the forming and the reversible resistive switching between low resistance state(LRS) and high resistance state(HRS) can be observed under either positive or negative sweep.The CAFM images for LRS and HRS directly exhibit evidence for the formation and rupture of filaments based on positive or negative voltage.The Cu/VOx/Cu sandwiched structure exhibits reversible resistive switching behavior and shows potential applications in the next generation of nonvolatile memory.