Nonlinear pulse response of p-i-n photodiode caused by the change of the bias voltage

An analytical expression is derived for nonlinear response of a p-i-n photodiode, commonly used in optical communications. Nonlinearity is caused only by the change of bias voltage, in case of pulse light excitation. The response time increases slowly with increasing the incident pulse power as a result of this nonlinearity. It is assumed in calculations that the optical excitation is not so strong to cause space charge redistribution.     

单光子探测器APD无源抑制特性研究

为了选择高性能单光子探测器件，采用无源抑制方法对工作在盖革模式下的雪崩光电二极管（APD: avalanche photodiode）特性进行了测量。利用APD两端的电压在雪崩后趋于稳定的特性，获得了一种确定暗击穿电压的方法。特性测量实验结果表明：降低温度能加宽APD的最佳工作区域范围，并提高最佳增益值，从而使APD具有更高的灵敏度。通过对EG&;G系列APD和外延APD暗电流和信噪比特性进行比较，发现外延 APD具有良好的噪声性能和信噪比性能，适用于单光子探测。     

Principal component analysis of non-uniformity in electrical characteristics of HgCdTe photodiode arrays

We present a method of analyzing the non-uniformity in electrical characteristics of HgCdTe photodiode arrays for infrared imaging applications. We have selected dynamic resistance–voltage (R–V) characteristics for analyzing electrical behavior of HgCdTe photodiodes because the dynamic resistance at a given operating voltage directly governs the imager performance and being derivative of current–voltage (I–V) characteristics, it has little impact of the constant shifts due to stray illumination during dark measurements, relaxing the stringent requirement of perfect dark conditions to some extent for performance analysis. We have demonstrated that by using statistical analysis such as correlation of the selected signatures and their principal component analysis, we can identify the root cause of the high non-uniformity among sensor pixels in the array. The method has been implemented using theoretical I–V model of MWIR HgCdTe photodiodes, but it is generic and may be implemented on any other types of diode arrays for theoretical or experimental analysis of their non-uniformity.     

不同负载下直流偏磁对特高压变压器各侧绕组电流影响的计算及分析

基于特高压变压器的时域场路耦合模型, 利用磁场模型中的能量扰动原理以及电路模型中动态电感参数建立瞬态电路偏微分方程模型。对特高压变压器负载时绕组电流受直流偏磁的影响进行了仿真计算, 针对阻性、感性和容性三种不同负载类型, 对绕组电流进行了直流偏磁计算, 并对其各次谐波变化进行了分析。面对特高压变压器大电感、小电阻带来的极为漫长的过渡过程以及直流偏磁计算易被淹没的难点, 通过在电路模型中增加串联电阻, 使达到稳态的时间大大缩短, 并通过电压迭代补偿, 有效消除增大串联电阻值导致的计算偏差, 通过对比所加偏置电流值与串联绕组中的直流分量值验证了本文模型的正确性。     

用光电二极管列阵测干涉条纹周期的精度分析

分析了用1024单元的光电二极管列阵测量干涉条纹周期时,采样密度对测量精度的影响.采样数据的量化为256,每个干涉条纹的采样点数从10至30左右时,测量精度最高,可优于2×10~(-5).量化小时,最佳采样密度变小.     

Pulse and frequency response of a p-i-n photodiode with absorption layer fabricated in two-valley semiconductor

Starting from the transport equations of the phenomenological model for a two-valley semiconductor, we obtained the pulse response of a p-i-n photodiode with the absorption layer fabricated in a two-valley semiconductor (GaAs, InGaAs...). The pulse response was determined for the case when it was possible to linearize the transport equations. It was shown that the nonstationary effects influence significantly the intensity and speed of the response. The frequency response was obtained by applying the fast Fourier transform (FFT) to the pulse response.     

基于选区外延技术的单片集成阵列波导光栅与单载流子探测器的端对接设计

选区外延技术是实现有源与无源光器件单片集成的一种有效的工艺手段,但同时对两种器件在异质生长界面处的对接结构提出了更高的设计要求.本文通过选区外延技术实现了InP基O波段4通道阵列波导光栅与单载流子探测器的单片集成.通过光学仿真重点研究了选区外延后界面处形貌对无源波导结构与有源光探测器间光耦合效率的影响,包括伸长的光学匹配层、二次外延生长边界位置、波导刻蚀边界位置等因素.研究结果表明,在保证二次外延生长边界对准异质对接界面时,将光学匹配层伸出探测器前端10μm并与外延边界无缝对接既可以保证高效的光传输效率(或探测器量子效率),又可以避免外延界面处的异常生长对器件制备工艺的影响,保证生长工艺与器件制备工艺的兼容性.成功制备的单片集成芯片具有高达76%的探测器量子效率,证明了对接方案的有效性.同时,集成芯片的低串扰(-22 dB)与解复用特性展示出其作为解复用光接收芯片具有巨大潜力.     

Photon-mediated spin-polarized current in a quantum dot under thermal bias

Spin-polarized current generated by thermal bias across a system composed of a quantum dot(QD) connected to metallic leads is studied in the presence of magnetic and photon fields. The current of a certain spin orientation vanishes when the dot level is aligned to the lead's chemical potential, resulting in a 100% spin-polarized current. The spin-resolved current also changes its sign at the two sides of the zero points. By tuning the system's parameters, spin-up and spin-down currents with equal strength may flow in opposite directions, which induces a pure spin current without the accompany of charge current. With the help of the thermal bias, both the strength and the direction of the spin-polarized current can be manipulated by tuning either the frequency or the intensity of the photon field, which is beyond the reach of the usual electric bias voltage.     

Noise characteristics of a superlattice avalanche photodiode

The noise generated due to randomness of multiplication process in the avalanche region of an Al _x Ga_1–x As/GaAs quantum well p⁺-i-n⁺ structure has been studied. The paper presents a quantitative evaluation of the noise performance of the superlattice APD which has not been done so far. Further, useful design data for low noise structure is given.     

高直流电场下PET薄膜的电致发光及其可靠性

用自制电致发光(Electrolum inescence-EL)测量装置测试了直流高电场下聚对苯二甲酸乙二酯[poly(ethylene terephthalate)-PET]薄膜EL的光强和光谱。实验表明:PET的发光光强随所加电场而增大,在4.00MV/cm附近发生预击穿。EL光谱在300~400nm、400~460nm、500~600nm和680nm附近存在发射峰,其中500~600nm峰带相对较强,预击穿信号出现后680nm附近的峰带增加很快。为了评价PET的介电性能,本文对实验数据用双参数Weibull分布解析法计算,得出了该薄膜在(24±1)℃,阶跃加压条件下的寿命和击穿电场的累积失效概率和可靠度方程,Weibull假设检验结果表明,实验结果服从Weibull分布。     

New relationship of displacement signal at quadrant photodiode: Control signal analysis and simulation of a laser tracker

New relationship of displacement signal using opposite sectors on a quadrant photodiode is derived. Standard and new displacement signals are analyzed in details. Through MATLAB^® laser tracking simulation models, based on common and suggested approaches, detailed analysis is performed, and it is shown that better results for the new relationship signal processing are obtained. Within new relationship of displacement signal, the sensitivity of the system to the displacement of the spot increases and, hence, provides better accuracy in positioning up to 30%.     

Investigation of the mode splitting induced by electro-optic birefringence in a vertical-cavity surface-emitting laser by polarized electroluminescence

The mode splitting induced by electro-optic birefringence in a P-I-N InGaAs/GaAs/A1GaAs vertical-cavity surface- emitting laser （VCSEL） has been studied by polarized electroluminescence （EL） at room temperature. The polarized EL spectra with E｜｜[110] and E ｜｜ [150] directions, are extracted for different injected currents. The mode splitting of the two orthogonal polarized modes for a VCSEL device is determined, and its value increases linearly with the increasing injected current due to electro-optic birefringence; This article demonstrates that the polarized EL is a powerful tool to study the mode splitting and polarization anisotropy of a VCSEL device.     

X射线分幅相机不同直流偏置下的皮秒选通特性

 利用SILEX-I装置打靶产生的亚皮秒X射线源研究了X射线分幅相机不同直流偏置下的选通特性。建立了曝光时间的X射线点源测量方法,基于系统原理定义了相机的动态增益。实验发现：与不加直流偏置相比,加载-100 V时曝光时间展宽10 ps,动态增益增大到4.5倍。动态增益增幅较理论模拟值偏大,加载负偏压可能改变了初始光电子的动力学特性。     

静磁场复合电流下时效对Cu—Cr—Zr合金组织及性能的影响

本文在经过固溶和冷变形处理Cu—Cr-Zr合金的等温时效过程中同时施加电流密度为100A／cm2的直流电流和不同磁感应强度的静磁场,发现电磁复合场能显著影响Cu—Cr-Zr合金的组织及性能．和无磁场下时效后合金性能相比,施加磁场后的合金电导率和显微硬度值均有一定程度的升高,其中在350℃,10T磁场下效果最明显,分别升高了22．1％IACS和25．3HV．利用透射电镜观察显微组织观察发现,施加磁场后合金组织中位错密度有所降低,同时出现了大量细小弥散的铬析出物,表明电磁复合场能进一步促进铜合金的时效过程,在低温时效时尤其明显．分析认为,电磁复合场对Cu-Cr-Zr合金时效过程的促进作用机理是磁场增强了电流的“电子风”效应．     

部份相干光照明的随机孔屏衍射特性

本文从部份相干理论出发，导出了随机孔屏的衍射强度期望分布及涨落方差表达式；对随机孔屏的衍射特性作了较深入的分析；讨论了光源的空间特性对衍射图形的影响；研究表明：衍射强度的光场分布不仅与孔和屏的几何特性有关，还与光源的形状和大小密切相关，文中还指出：在特定明情况下，形状一定的小孔无论在数目还是尺寸上发生随机变化，都不会改变衍射场的强度期望分布和涨落方差分布。     

Investigation of transport properties of perovskite single crystals by pulsed and DC bias transient current technique

Time-of-flight (ToF) transient current method is an important technique to study the transport characteristics of semiconductors. Here, both the direct current (DC) and pulsed bias ToF transient current method are employed to investigate the transport properties and electric field distribution inside the MAPbI$_{3}$ single crystal detector. Owing to the almost homogeneous electric field built inside the detector during pulsed bias ToF measurement, the free hole mobility can be directly calculated to be about 22 cm$^{2}\cdot$V$^{-1}\cdot$s$^{-1}$, and the hole lifetime is around 6.5 μs-17.5 μs. Hence, the mobility-lifetime product can be derived to be $1.4\times 10^{-4}$ cm$^{2}\cdot$V$^{-1}$-$3.9\times 10^{-4}$ cm$^{2}\cdot$V$^{-1}$. The transit time measured under the DC bias deviates with increasing voltage compared with that under the pulsed bias, which arises mainly from the inhomogeneous electric field distribution inside the perovskite. The positive space charge density can then be deduced to increase from 3.1$\times10^{10}$ cm$^{-3}$ to 6.89$\times 10^{10}$ cm$^{-3}$ in a bias range of 50 V-150 V. The ToF measurement can provide us with a facile way to accurately measure the transport properties of the perovskite single crystals, and is also helpful in obtaining a rough picture of the internal electric field distribution.     

反向衬底偏压下纳米N沟道金属氧化物半导体场效应晶体管中栅调制界面产生电流特性研究

研究了反向衬底偏压V_B下纳米N沟道金属氧化物半导体场效应晶体管中栅调制界面产生(GMG)电流I_GMG特性, 发现I_GMG曲线的上升沿与下降沿随着|V_B|的增大向右漂移. 基于实验和理论模型分析, 得出了V_B与这种漂移之间的物理作用机制, 漂移现象的产生归因于衬底偏压V_B 调节了表面电势φ_s在栅电压V_G 中的占有比重: |V_B|增大时相同V_G下φ_s会变小, φ_s 的变化继而引发上升沿产生率因子g_r减小以及下降沿产生率因子g_f增大. 进一步发现I_GMG 上升沿与下降沿的最大跨导G_MR, G_MF 在对数坐标系下与V_B成线性关系, 并且随着|V_B|增加而增大. 由于漏电压V_D在I_GMG 上升沿与下降沿中的作用不同, 三种V_D下G_MR-V_B曲线重合而G_MF-V_B曲线则产生差异. 增大V_D 会增强g_f 随V_G的变化, 因此使得给定V_B 下的G_MF变大. 同时这却导致了更大V_D下G_MF-V_B 曲线变化的趋势减缓, 随着V_D从0.2 V变为0.6 V, 曲线的斜率s从0.09减小到0.03. 关键词： 产生电流 表面势 衬底偏压 N沟道金属氧化物半导体场效应晶体管     

AlGaN/GaN HEMT器件直流扫描电流崩塌机理及其物理模型

通过对AlGaN/GaN HEMT器件直流扫描情况下电流崩塌现象和机理的分析，建立了一个AlGaN/GaN HEMT器件的直流扫描电流崩塌模型.该模型从AlGaN/GaN器件工作机理出发，综合考虑了器件结构、半导体表面与界面，以及量子阱特殊结构对电流崩塌的影响.实验反复证明了该模型与实验结果有良好的一致性. 关键词： AlGaN/GaN HEMT 直流扫描 电流崩塌 模型     

Influence of the bias current on the output characteristics of a mode-locked fiber ring laser consisting of two SOAs

In this paper, after obtaining the mode-locked pulse shape with self-reproduction theory, the influence of the bias current on the output characteristics of a backward-optical-injection harmonic mode-locked fiber ring laser consisting of two semiconductor optical amplifiers (SOAs) has been numerically investigated. The results show that the mode-locked pulse with high peak power and narrow width can be obtained through reasonably adjusting the bias currents of the two SOAs.