Theoretical investigation on the electronic structure,elastic properties,and intrinsic hardness of Si₂N₂O

According to the density functional theory we systematically study the electronic structure, the mechanical prop- erties and the intrinsic hardness of Si2N2O polymorphs using the first-principles method. The elastic constants of four Si2N2O structures are obtained using the stress-strain method. The mechanical moduli (bulk modulus, Young’s mod- ulus, and shear modulus) are evaluated using the Voigt-Reuss-Hill approach. It is found that the tetragonal Si2N2O exhibits a larger mechanical modulus than the other phases. Some empirical methods are used to calculate the Vickers hardnesses of the Si2N2O structures. We further estimate the Vickers hardnesses of the four Si2N2O crystal structures, suggesting all Si2N2O phases are not the superhard compounds. The results imply that the tetragonal Si2N2O is the hardest phase. The hardness of tetragonal Si2N2O is 31.52 GPa which is close to values of β-Si3N4 and γ-Si3N4.     

Theoretical study on stability,mechanical properties and thermodynamic parameters of the orthorhombic-A2N2O (A=C,Si and Ge)

The structural stability, mechanical properties and thermodynamic parameters such as Debye temperature, minimum thermal conductivities of orthorhombic-A₂N₂O (A=C, Si and Ge) are calculated by first principles calculations based on density functional theory. The calculated lattice parameters, elastic constants of Si₂N₂O and Ge₂N₂O using PBEsol function are consisted with the experimental data and other calculated values. The full set elastic constants of the orthorhombic-A₂N₂O (A=C, Si and Ge) are calculated by stress–strain method. The mechanical moduli (bulk modulus, shear modulus and Young's modulus) are evaluated by the Voigt–Reuss–Hill approach. The orthorhombic-C₂N₂O exhibits larger mechanical moduli than the other two structures. The hardness of orthorhombic-A₂N₂O (A=C, Si and Ge) is evaluated according to the intrinsic hardness calculation theory of covalent crystal relying on Mulliken overlap population. The results indicate that the orthorhombic-C₂N₂O is a super hard material. Furthermore, the mechanical anisotropy, Debye temperature and minimum thermal conductivity of the orthorhombic-A₂N₂O (A=C, Si and Ge) have been estimated by empirical methods. The orthorhombic-Ge₂N₂O shows the lowest thermal conductivity, which may have useful applications as gas turbine engines and diesel engines.     

Fluoride-doped MWCNT/Si3N4 composite with improved mechanical and structural properties

The addition of carbon nanotubes (CNT) in ceramic composites has stimulated a substantial interest due to their high mechanical, thermal and electrical properties. This approach used fluoride additives (AlF₃ and MgF₂) to prepare multi-walled carbon nanotubes/silicon nitride (MWCNT/Si₃N₄) composite densified at 1700 °C for 1 h by hot press (HP) sintering. The microstructural analyses of MWCNT/Si₃N₄ composites indicate that the fluoride additives have substantially improved densification and the transformation of α-Si₃N₄ to β-Si₃N₄. As observed, the mechanical properties, i.e. flexural strength, fracture toughness, Young's modulus and hardness of MWCNT/Si₃N₄ composites are improved with an increasing concentration of MWCNT. These results attributed to the highly dense composites, strong interfacial interaction and the pull-out mechanism of MWCNT and β-Si₃N₄. The maximum values of fracture toughness flexural strength, Young's modulus, and hardness were 12.76 ± 1.15 MPa.m^0.5, 883 ±46 MPa, 260 ±9 GPa, and 26.4 ± 1.3 GPa, respectively. The improved mechanical properties also ascribed to the synergistic strengthening and toughening influence of MWCNT and β-Si₃N₄.     

A first-principles study of the properties of P-43m-Si3×2 (X = N,P and As)

The new P-43m-Si₃P₂ and P-43m-Si₃As₂ structures are predicted using the first-principles approach based density functional theory (DFT). The elastic constants, structural stability, phonon dispersion spectra, band structures, density of states, and optical properties of P-43m-Si₃×₂ (X=N, P and As) have been analyzed. The values of the elastic constants indicate that their structures are mechanically stable. Each elastic constant of the Si₃N₂ is greater than the corresponding elastic constants of Si₃P₂ and Si₃As₂. The Young's moduli, shear moduli, bulk moduli, Pugh ratios and Poisson's ratios of P-43m-Si₃×₂ are calculated at 0 GPa. Si₃N₂ has a larger Young's modulus, so it has higher hardness and good resistance to deformation. The bulk moduli of P-43m-Si₃×₂ are isotropic. The shear modulus of Si₃As₂ is anisotropic. The Pugh ratios of P-43m-Si₃×₂ are 0.50, 0.49 and 0.39, respectively. Their Poisson's ratios are 0.28, 0.29 and 0.33, respectively. The results show that they are brittle materials at zero pressure. The calculated phonon spectra confirm that they are dynamically stable. The calculated enthalpy of formation indicates their thermodynamic stability. The energy band gaps of P-43m-Si₃×₂ calculated by HSE06 hybrid function are 0.786, 0.955 and 0.343 eV, respectively. Si₃N₂ has a direct bandgap, Si₃P₂ and Si₃As₂ have indirect bandgaps. The dielectric functions, refractive indices, optical reflectance spectra, absorption coefficients, conductivities and loss functions of P-43m-Si₃×₂ are calculated. The calculated static dielectric constants of P-43m-Si₃×₂ are 5.207, 9.237 and 10.072, respectively. The maximum values of the loss functions of P-43m-Si₃×₂ are 6.408, 5.672 and 5.276 eV, respectively.     

Mechanical properties and hardness of new carbon-rich superhard C11N4 from first-principles investigations

The structural, mechanical properties and hardness of the new carbon-rich material C₁₁N₄ are studied by first-principles total energy calculations based on the density-functional theory. We use the empirical equations of state (EOS) to investigate the lattice properties and bulk modulus. It is found that the calculated lattice constants and bulk modulus are in good agreement with previous calculations. And the full set elastic constants are calculated using the stress-strain method. The Voigt-Reuss-Hill approximation is used to evaluate the mechanical moduli. The elastic constants show that the two phases of C₁₁N₄ are mechanically stable. The tetragonal-C₁₁N₄ (α-C₁₁N₄) exhibits larger mechanical moduli than the orthorhombic-C₁₁N₄ (β-C₁₁N₄). The mechanical anisotropy is calculated of several different anisotropic indexes and factors, such as universal anisotropic index (A^U), the percent anisotropy (A_G and A_B) and shear anisotropic factors (A₁, A₂ and A₃). Furthermore, the hardness of α-C₁₁N₄ and β-C₁₁N₄ are evaluated according to the intrinsic hardness calculation theory. α-C₁₁N₄ is predicted to be a superhard material with the Vickers hardness of 67.17 GPa, which is slightly higher than that of the cubic boron nitride. And the β-C₁₁N₄ is also a superhard material with the calculated Vickers hardness of 45.63 GPa. C₁₁N₄ can be considered as candidate superhard compounds.     

γ-Si3N4在高压下的电子结构和物理性质研究

采用基于密度泛函平面波赝势方法(PWP)和广义梯度近似(GGA-PW91)，计算了不同压强下γ-Si₃N₄的电子结构、光学性质和力学性质.基于计算结果，分析讨论了γ-Si₃N₄各物理参数随外压力的变化规律.计算表明，γ-Si₃N₄是一种适合于在高压条件下工作的材料.     

Si3N4在h-AlN上的晶体化与AlN/Si3N4纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列具有不同Si₃N₄层厚度的AlN/Si₃N₄纳米多层膜,利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能.研究了Si₃N₄层在AlN/Si₃N₄纳米多层膜中的晶化现象及其对多层膜生长结构与力学性能的影响.结果表明,在六方纤锌矿结构的晶体AlN调制层的模板作用下,通常溅射条件下以非晶态存在的Si₃N₄层在其厚度小于约1nm时被强制晶化为结构与AlN相同的赝形晶体,AlN/Si₃N₄纳米多层膜形成共格外延生长的结构,相应地,多层膜产生硬度升高的超硬效应.Si₃N₄随层厚的进一步增加又转变为非晶态,多层膜的共格生长结构因而受到破坏,其硬度也随之降低.分析认为,AlN/Si₃N₄纳米多层膜超硬效应的产生与多层膜共格外延生长所形成的拉压交变应力场导致的两调制层模量差的增大有关. 关键词： 3N₄纳米多层膜')" href="#">AlN/Si₃N₄纳米多层膜 外延生长 赝晶体 超硬效应     

β-Si3N4电子结构和光学性质的第一性原理研究

采用基于密度泛函的平面波赝势方法(PWP)和广义梯度近似(GGA)，计算了β相氮化硅(β-Si₃N₄)的电子结构和光学性质，得到的晶格常数、能带结构等均与实验结果较好符合.进一步还研究了β-Si₃N₄的光吸收系数以及禁带宽度随外压力的变化规律，为β-Si₃N₄材料在高压条件下的应用提供了理论参考. 关键词： β相氮化硅 电子结构 能带结构 光学性质     

Evaluation of fracture toughness of ZrO2 and Si3N4 engineering ceramics following CO2 and fibre laser surface treatment

The fracture toughness property (K_1C) of Si₃N₄ and ZrO₂ engineering ceramics was investigated by means of CO₂ and a fibre laser surface treatment. Near surface modifications in the hardness were investigated by employing the Vickers indentation method. Crack lengths and the crack geometry were then measured by using the optical microscopy. A co-ordinate measuring machine was used to investigate the diamond indentations and to measure the lengths of the cracks. Thereafter, computational and analytical methods were employed to determine the K_1C. An increase in the K_1C of both ceramics was found by the CO₂ and the fibre laser surface treatment in comparison to the as-received surfaces. The K_1C of the CO₂ laser radiated surface of the Si₃N₄ was over 3% higher in comparison to that of the fibre laser treated surface. This was by softening of the near surface layer of the Si₃N₄ which comprised of lowering of hardness, which in turn increased the crack resistance. The effects were not similar in ZrO₂ ceramic to that of the Si₃N₄ as the fibre laser radiation in this case had produced an increase of 34% compared to that of the CO₂ laser radiation. This occurred due to propagation of lower crack resulting from the Vickers indentation test during the fibre laser surface treatment which inherently affected the end K_1C through an induced compressive stress layer. The K_1C modification of the two ceramics treated by the CO₂ and the fibre laser was also believed to be influenced by the different laser wavelength and its absorption co-efficient, the beam delivery system as well as the differences in the brightness of the two lasers used.     

Si3N4的晶体化和ZrN/Si3N4纳米多层膜的超硬效应

研究了Si₃N₄层在ZrN/Si₃N₄纳米多层膜中的晶化现象及其对多层膜微结构与力学性能的影响. 一系列不同Si₃N₄层厚度的ZrN/Si₃N₄纳米多层膜通过反应磁控溅射法制备. 利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能. 结果表明，由于受到ZrN调制层晶体结构的模板作用，溅射条件下以非晶态存在的Si₃N₄层在其厚度小于0.9 nm时被强制晶化为NaCl结构的赝晶体，ZrN/Si₃N₄纳米多层膜形成共格外延生长的柱状晶，并相应地产生硬度升高的超硬效应. Si₃N₄随层厚的进一步增加又转变为非晶态，多层膜的共格生长结构因而受到破坏，其硬度也随之降低.     

Structural, elastic, and electronic properties of icosahedral boron subcarbides (B12C3, B13C2), subnitride B12N2, and suboxide B12O2 from data of SCC-DFTB calculations

The structural, elastic, and electronic properties of a series of icosahedral phases, such as boron subcarbides B₁₂C₃ and B₁₃C₂, subnitride B₁₂N₂, and suboxide B₁₂O₂, have been studied in the framework of the SCC-DFTB method. It has been found that the B₁₂C₂ and B₁₃C₂ phases manifest metal-like properties, while B₁₂C₃ and B₁₂O₂ are semiconductors. The estimates have shown that the insertion of 2p atoms (C, N, or O) into intericosahedral pores of elemental boron can cause both a decrease in its elastic modulus (an increase in the compressibility of B₁₂N₂) and a sharp increase in the modulus B (in subcarbides B₁₂C₃ and B₁₂BCC). On the other hand, the insertion of 2p atoms into α-B₁₂ will favor an increase in its hardness (suboxide B₁₂O₂ will have a maximum hardness).     

Preparation, characterization and luminescence properties of porous Si3N4 ceramics with Eu2O3 as sintering additive

Porous Si₃N₄ ceramics with photoluminescence properties were prepared by pressureless sintering using α-Si₃N₄ powder as raw material and Eu₂O₃ as sintering additive. Chemical composition, phase formation, microstructure and photoluminescence properties of porous Si₃N₄ ceramics were studied by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and photoluminescence measurements (PL/PLE). The results show that single Eu₂O₃ additive promotes α→β transformation but not significant densification. A broad band emission center at 570 nm assigned to Eu²⁺ is observed, Eu³⁺ in Eu₂O₃ is (partially) converted to Eu²⁺ by reaction with Si₃N₄, which results in a lower β aspect ratio and β-content compared to the other Ln (Ln=lanthanide) oxide additives.     

Crystallization of amorphous Si3N4 and superhardness effect in HfC/Si3N4 nanomultilayers

HfC/Si₃N₄ nanomultilayers with various thicknesses of Si₃N₄ layer have been prepared by reactive magnetron sputtering. Microstructure and mechanical properties of the multilayers have been investigated. The results show that amorphous Si₃N₄ is forced to crystallize and grow coherently with HfC when the Si₃N₄ layer thickness is less than 0.95 nm, correspondingly the multilayers exhibit strong columnar structure and achieve a significantly enhanced hardness with the maximum of 38.2 GPa. Further increasing Si₃N₄ layer thickness leads to the formation of amorphous Si₃N₄, which blocks the coherent growth of multilayer, and thus the hardness of multilayer decreases quickly.     

Elastic property and intrinsic hardness of novel superhard ternary nitrides (CSi2N4 and SiC2N4)

In this work, the new ternary nitrides (CSi₂N₄ and SiC₂N₄) are designed by the substitution method. The structures, elastic properties, intrinsic hardness and Debye temperature of the new ternary nitrides (CSi₂N₄ and SiC₂N₄) are studied by first-principles calculations based on the density-functional theory. The elastic constants C_ij$C_{ij}$ of these new ternary nitrides are obtained using the stress–strain method. Derived elastic constants, such as bulk modulus, shear modulus, Young's modulus, Poisson coefficient and brittle/ductile behavior are estimated using Voigt–Reuss–Hill theories. The results indicate that γ-CSi₂N₄, p-CSi₂N₄ and p-SiC₂N₄ are mechanically stable. Calculated B/G$B/G$ values and Poisson's ratio for γ-CSi₂N₄, p-CSi₂N₄ and p-SiC₂N4 indicate that these materials are brittle. The calculated anisotropy parameters indicate that γ-CSi₂N₄ shows weak anisotropy and p-SiC₂N₄ and p-CSi₂N₄ have larger anisotropy. Based on the microscopic hardness model, p-CSi₂N₄, p-SiC₂N₄ and γ-CSi₂N₄ should be viewed as superhard materials with some peculiar mechanical properties.     

Effect of processing parameters on the deposition rate of Si3N4/Si2N2O by chemical vapor infiltration and the in situ thermal decomposition of Na2SiF6

Silicon nitride (Si₃N₄) and oxynitride (Si₂N₂O) were deposited by chemical vapor infiltration (CVI) through a novel route involving the in-situ thermal decomposition of Na₂SiF₆ in commercial nitrogen precursors containing impurity oxygen. In addition, the quantitative effect of processing time (30, 60, 90, 120 min), temperature (1000, 1100, 1200 and 1300 °C), nitrogen precursor (N₂ or N₂-5%NH₃) and gas flow rate (46.5, 93, 120 and 240 cm³/min) on phase percentage and deposition rate of Si₃N₄ and Si₂N₂O was investigated. Analysis of variance shows that the parameter that most significantly impacts the total amount of deposited phase is the processing temperature, followed by processing time and nitrogen precursor. Regardless of the nitrogen precursor, at 1300 °C, Si₃N₄ and Si₂N₂O depositions follow an S-like and parabolic behavior, respectively. The incubation period shown by Si₃N₄ in N₂-5%NH₃ is associated to a decrease in the O₂ partial pressure during Si₂N₂O formation while the rapid increase at long processing times is attributed to the enhanced effect of hydrogen. PACS 81.15.Gh; 81.05.Je; 81.15.-z; 81.05.Rm; 47.85.L-     

Mechanical properties,anisotropy and hardness of group IVA ternary spinel nitrides

In this work, new ternary cubic spinel structures are designed by the substitutional method. The structures, elasticity properties, intrinsic hardness and Debye temperature of the cubic ternary spinel nitrides are studied by first principles based on the density-functional theory. The results show that γ-CSn₂N₄, γ-SiC₂N₄, γ-GeC₂N₄ and γ-SnC₂N₄ are not mechanically stable. The elastic constants C_ij of these cubic spinel structures are obtained using the stress–strain method. Derived elastic constants, such as bulk modulus, shear modulus, Young's modulus, Poisson coefficient and brittle/ductile behaviour are estimated using Voigt–Reuss–Hill theories. The B/G value, the Poisson's ratio and anisotropic factor are calculated for eight ternary stable crystals. Based on the microscopic hardness model, we further estimate the Vickers hardness of all the stable crystals. From the calculated hardness of the stable group IVA ternary spinel nitrides by Gao's and Jiang's methods, it is observed that the stable group IVA ternary spinel nitrides are not superhard materials except for γ-CSi₂N₄. Furthermore, the Debye temperature for the eight stable crystals is also estimated.     

Structural, elastic constants, hardness, and optical properties of pyrite-type dinitrides (CN2, SiN2, GeN2)

The crystal structures, band structures, elastic constants, hardness, and optical properties of pyrite-type dinitrides (CN₂, SiN₂, and GeN₂) are obtained from the density functional theory using the plane-wave pseudopotential (PWP) method within the local density and generalized gradient approximations. The formation enthalpies for AN₂ (A=C, Si, and Ge) compounds suggest the three structures that are stable. The calculated band structures show the indirect gaps (Γ−R) in CN₂, SiN₂, and GeN₂. The intrinsic hardnesses of AN₂ (A=C, Si, and Ge ) compounds are calculated. Our results show that the cubic CN₂ and SiN₂ are superhard materials. Furthermore, we studied the optical properties such as the complex dielectric function and the electron energy loss spectra.     

Investigation of tetragonal ReN2 and WN2 with high shear moduli from first-principles calculations

Two new transition metal dinitrides, ReN₂ and WN₂, with the P4/mmm structure are investigated by the first-principles calculations. The computed shear moduli of 327 GPa for ReN₂ and 334 GPa for WN₂ exceed those of all transition metal dinitrides previously reported. The estimated theoretical hardness are 46.3 GPa for ReN₂ and 47.9 GPa for WN₂, respectively. The calculated high shear moduli and hardness indicate that they are potential ultrahard materials. It is important to note that the computed hardness of the weakest bond are 34.7 GPa (W-N) for WN₂ and 33.1 GPa (Re-N) for ReN₂, much higher than that of 21.1 GPa (Re-B) for ReB₂, which suggests that tetragonal ReN₂ and WN₂ are probably harder than ReB₂. The total and partial electron density of states and the electron localization function for ReN₂ and WN₂ are analyzed. We attribute the high bulk modulus, shear modulus, and hardness to a three-dimensional covalently bonded framework in tetragonal ReN₂ and WN₂. Our calculations show that tetragonal ReN₂ is expected to be synthesized above 62.7 GPa and tetragonal WN₂ may be hard to be synthesized.     

β-C3N4,β-Si3N4和β-Ge3N4的能带结构

采用基于密度泛函理论的线性丸盒轨道原子球近似(LMTO-ASA)从头计算方法,研究了β-C₃N₄,β-Si₃N₄和β-Ge₃N₄的能带结构,得到了它们的能隙分别为:4.1751,5.1788和4.0279eV。对于β-C₃N₄,由于N的部分2p电子占据了非键轨道,禁带宽度较窄;对于β-Si₃N_{4关键词：}     

Mechanical properties of bulk and nanoscale TiO2 phases

The mechanical properties of bulk and nanoscale TiO₂ phases are examined with a view to assess the available bulk modulus and hardness data, and to understand the size-dependent behaviors. The bulk modulus values of thermodynamically stable bulk TiO₂ phases show a general correlation with Ti-O coordination number. As with the cotunnite-structured (OII) phase, it is likely that the seven-coordinated OI and eight-coordinated fluorite forms of TiO₂ are ultrahard substances. Of the nanoscale phases investigated thus far, nanocrystalline anatase displays the strongest size dependence of bulk modulus values, with possible stiffening behavior effected by incipient grain boundary amorphization under pressure. Nanocrystalline rutile and baddeleyite phases do not show appreciable size dependence in their compression behaviors.