Stabilization variation of organic conductor surfaces induced by π-π stacking interactions

The structures and stabilization of three crystal surfaces of TCNQ-based charge transfer complexes(CTCs) including PrQ(TCNQ) 2,MPM(TCNQ) 2,and MEM(TCNQ) 2,have been investigated by scanning tunneling microscopy(STM).The three bulk-truncated surfaces are all ac-surface,which are terminated with TCNQ molecular arrays.On the ac-surface of PrQ(TCNQ) 2,the TCNQ molecules form a tetramer structure with a wavelike row behavior and a γ angle of about 18° between adjacent molecules.Moreover,the dimer structures are resolved on both ac-surfaces of MPM(TCNQ) 2 and MEM(TCNQ) 2.In addition,the tetramer structure is the most stable structure,while the dimer structures are unstable and easily subject to the STM tip disturbance,which results in changeable unit cells.The main reasons for the surface stabilization variation among the three ac-surfaces are provided by using the ’π-atom model’.     

Formation of carbon-induced dimer vacancy defects on Si(0 0 1)-2 × 1 by thermal decomposition of organic molecules-lack of dependence on the molecules’ structure

Two large and complex adsorbed organic molecules, coronene (C₂₄H₁₂) and C₆₀, have been used to produce Si dimer vacancy defects on Si(0 0 1) by thermal decomposition. Studies by STM show that the aligned structural arrangement of the dimer vacancy defects produced is independent of the chemical structure of the organic molecules. This indicates that the chemistry of the thermally decomposed carbon species produced by decomposition of the organic molecule controls the organization of the Si dimer vacancy defects. It is found that ∼1 C atom is responsible for each dimer vacancy defect for both molecules in accordance with earlier studies of C₂H₂ decomposition on Si(0 0 1).     

Towards hybrid silicon-organic molecular electronics: The stability of acetone on the Si(0 0 1) surface

We present the results of a combined study using scanning tunneling microscopy (STM) and density functional theory (DFT) of the interaction of acetone [(CH₃)₂CO] with the Si(0 0 1) surface. Three distinct adsorbate features were observed using atomic-resolution STM. One of the features appears as a bright protrusion located above a Si-Si dimer, while the other two are asymmetric about the dimer row and involve a second neighboring Si-Si dimer. One of the two asymmetric features has a protrusion located between the two dimers, while the other has a protrusion which is located at the site of a single dimer and exhibits a dimer sized depression on the adjacent dimer. DFT calculations have been performed for two structures; the four-membered ring structure and dissociation structure. Our calculations show that the bright single-dimer sized feature observed in the STM images could be attributed to either of these two calculated structures. However, neither of the two calculated structures can explain the appearance of the two-dimer wide asymmetric features observed in the experiment.     

Phase transition in MEM(TCNQ)2 single crystals by infrared reflection spectroscopy

Between 280 and 320 K the MEM⁺ ions in the salt MEM(TCNQ)₂ show an order-disorder phase transition. Moreover MEM(TCNQ)₂ undergoes the phase transition at 335 K. The influence of these two transitions on the i.r. reflectivity spectrum is studied.     

Theoretical consideration on dimer vacancy images in the STM observations of Si(001) surfaces in terms of the adsorption of O2 molecules

Geometric and electronic structures of dimers on the Si(001)-2 × 1 reconstructed surfaces before and after O₂ adsorption have been investigated with an ab initio molecular orbital (MO) calculation at the Hartree-Fock level. The theoretically predicted electron tunneling current in the dimer before and after O₂ adsorption has strongly suggested that the O₂-adsorbed dimer on clean Si(001) surfaces is observed as dark in the scanning tunneling microscope (STM) images. The dark spot images which have so far been recognized to be a dimer vacancy type defect could be due to the O₂ adsorption in parallel to a Si dimer.     

Empty-state scanning tunneling microscopy image of C2H2 on Si(0 0 1)--new evidence for paired end-bridge di-σ configuration

New evidence of the paired end-bridge configuration in the room-temperature adsorption geometries of C₂H₂ molecules on Si(0 0 1) is presented by scanning tunneling microscopy (STM) and ab initio pseudopotential calculations. The distinct four-leaved feature occupying two adjacent Si dimer sites in the experimental empty-state STM images are well reproduced by simulations of the paired end-bridge adsorption configuration. Calculated energetics suggests that the Si(0 0 1) surface is covered by paired end-bridge structures at the saturation coverage of 1 ML, in agreement with the existing experiments.     

Atomic surface structure of Si(1 0 0) substrates prepared in a chemical vapor environment

Subsequent III-V integration by metal-organic vapor phase epitaxy (MOVPE) or chemical vapor deposition (CVD) necessitates elaborate preparation of Si(1 0 0) substrates in chemical vapor environments characterized by the presence of hydrogen used as process gas and of various precursor molecules. The atomic structure of Si(1 0 0) surfaces prepared in a MOVPE reactor was investigated by low energy electron diffraction (LEED) and scanning tunnelling microscopy (STM) available through a dedicated, contamination-free sample transfer to ultra high vacuum (UHV). Since the substrate misorientation has a fundamental impact on the atomic surface structure, we selected a representative set consisting of Si(1 0 0) with 0.1°, 2° and 6° off-cut in [0 1 1] direction for our study. Similar to standard UHV preparation, the LEED and STM results of the CVD-prepared Si(1 0 0) surfaces indicated two-domain (2 × 1)/(1 × 2) reconstructions for lower misorientations implying a predominance of single-layer steps undesirable for subsequent III-V layers. However, double-layer steps developed on 6° misoriented Si(1 0 0) substrates, but STM also showed odd-numbered step heights and LEED confirmed the presence of minority surface reconstruction domains. Strongly depending on misorientation, the STM images revealed complex step structures correlated to the relative dimer orientation on the terraces.     

Atomic-scale surface science phenomena studied by scanning tunneling microscopy

Following the development of the scanning tunneling microscope (STM), the technique has become a very powerful and important tool for the field of surface science, since it provides direct real-space imaging of single atoms, molecules and adsorbate structures on surfaces. From a fundamental perspective, the STM has changed many basic conceptions about surfaces, and paved the way for a markedly better understanding of atomic-scale phenomena on surfaces, in particular in elucidating the importance of local bonding geometries, defects and resolving non-periodic structures and complex co-existing phases. The so-called “surface science approach”, where a complex system is reduced to its basic components and studied under well-controlled conditions, has been used successfully in combination with STM to study various fundamental phenomena relevant to the properties of surfaces in technological applications such as heterogeneous catalysis, tribology, sensors or medical implants. In this tribute edition to Gerhard Ertl, we highlight a few examples from the STM group at the University of Aarhus, where STM studies have revealed the unique role of surface defects for the stability and dispersion of Au nanoclusters on TiO₂, the nature of the catalytically active edge sites on MoS₂ nanoclusters and the catalytic properties of Au/Ni or Ag/Ni surfaces. Finally, we briefly review how reaction between complex organic molecules can be used to device new methods for self-organisation of molecular surface structures joined by comparatively strong covalent bonds.     

Interpretation of initial stage of 3C-SiC growth on Si(1 0 0) using dimethylsilane

The initial stage of cubic silicon carbide (3C-SiC) growth on a Si(0 0 1) surface using dimethylsilane (DMS) as a source gas was observed using scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED). It was found that the dimer vacancies initially existing on the Si(0 0 1)-(2 × 1) surface were repaired by the Si atoms in DMS molecules, during the formation of the c(4 × 4) surface. From the STM measurement, nucleation of SiC was found to start when the Si surface was covered with the c(4 × 4) structure but before the appearance of SiC spots in the RHEED pattern. The growth mechanism of SiC islands was also discussed based on the results of RHEED, STM and temperature-programmed desorption (TPD).     

The thermoelectric power of MEM(TCNQ)2

MEM(TCNQ)₂ undergoes a first order semiconductor to metal transition at 340.8 K. We have measured the thermoelectric power (TEP) of MEM(TCNQ)₂ in the temperature range above 335 K. Above the transition the TEP is ?65 μV/°K, in the low temperature phase it is strongly temperature dependent and approaches zero near the transition. The indicated loss of spin entropy at the transition is discussed.     

Spectroscopic investigation of pressure-induced phase transitions in TCNQ complex salts

In most of the TCNQ complex salts, conduction electrons are localized on specific TCNQ sites, so that these salts show nonmetalic behavior. The caesium salt, Cs₂(TCNQ)₃, is one of the 2:3 complex salts. In the crystal, TCNQ molecules form trimeric units, which consist of two TCNQ radical anion sandwiching a neutral TCNQ along the column. The rubidium salt, Rb₂(TCNQ)₃, also has a similar crystal structure to Cs₂(TCNQ)₃. We measured infrared absorption (IR) and Raman spectra for these salts under high pressure by using a diamond anvil cell. In the case of IR spectra, Cs₂(TCNQ)₃ showed a spectral change probably due to a pressure-induced phase transition. Similar feature was not clearly observed in the Rb₂(TCNQ)₃. On the other hand, the Raman spectra, Cs₂(TCNQ)₃ showed two phase transition at 2.5 and 4.1 GPa in the compression stage. The change from localization phase to delocalization phase occurred at latter transition with large hysteresis. Similar phase transition occurred at 3.2 GPa in the Rb₂(TCNQ)₃. The reason for the difference in transition pressure is that the ion radius of Rb⁺ is smaller than that of Cs⁺, because a small ion radius of the counter ion probably favors the charge localization-delocalization transition of the TCNQ column.     

STM investigations of Au(1 1 1) electrodes coated with vitamin B12 derivatives

Vitamin B₁₂ derivatives immobilized at flame-annealed Au(1 1 1) electrode surfaces have been investigated in close correlation with their structural properties and spatial arrangement at the electrode substrate by scanning tunneling microscopy (STM) in air and in aqueous 0.1 M NaClO₄ solution. The investigated compounds were symmetrical (B₁₂C₁₀S-SC₁₀B₁₂) and nonsymmetrical (B₁₂C₁₀S-SC₁₀) dialkyl disulfide derivatives of vitamin B₁₂, attached to the electrode surfaces by the S-Au bond. The ex situ and in situ STM experiments show the formation of a surface layer, whose packing density and structure is presumably controlled by the spatial arrangement of the large cobyrinate head groups. In presence of the symmetrical B₁₂ compound, a disordered surface layer is observed. Voltammetric investigations show that, in 0.1 M NaClO₄, this layer becomes unstable at potentials approximately ? −1000 mV vs. MSE and is almost completely removed at more negative potentials. The STM imaging properties of the nonsymmetrical B₁₂ surface layer show a significant dependence on the tunneling distance. In particular, at small tunneling distances, a highly regular hexagonal surface pattern is observed that suggests strongly the presence of an ordered surface assembly. Modeling of the B₁₂ head group has been performed to provide information for a structure-related interpretation of the high-resolution STM images. The investigations are first STM results obtained at such B₁₂ modified electrodes.     

Scanning tunneling microscopy of fluorinated fullerene molecules on silicon surfaces

Scanning tunneling microscopy (STM) under ultra-high vacuum conditions is used to study the initial stages of adsorption of C₆₀F₁₈ and C₆₀F₃₆ fluorofullerene molecules on Si(111)-7 x 7 and Si(100)-2 x 1 surfaces. Spatially resolved STM images of individual molecules and ab initio calculations show that the fluorofullerene molecules interact with an Si surface, with the F atoms oriented toward the surface. The large electric dipole moment of the molecules induces strong polarization on the surface, but the charge transfer is weak. The presence of C₆₀F₃₆ isomers with different symmetry—T, C ₃, and C ₁—is revealed in STM images for the first time.     

GaAs(0 0 1) (2 × 4) to c(4 × 4) transformation observed in situ by STM during As flux irradiation

Atomic resolution scanning tunnelling microscopy (STM) has been used to study in situ the As-terminated reconstructions formed on GaAs(0 0 1) surfaces in the presence of an As₄ flux. The relationship between the As-rich (2 × 4) and c(4 × 4) surfaces is observed throughout the gradual evolution of the reconstruction transformation. The results suggest that during the initial stage of the transformation, Ga-rich As-terminated variations of the c(4 × 4) form in order to accommodate excess mobile Ga produced by pit formation. These transient structures later planarize, as excess Ga is incorporated at step/island edges. Successive imaging of the same sample area during As₄ irradiation allows point-by-point adatom binding to be analysed in a way inaccessible to MBE–STM systems relying on sample quenching and transfer.     

Additivity and non-additivity of dissociation energies in intermolecular interactions. Theoretical studies on (H2)n,n = 2-8, (CO2)n,n = 2-6 and (HF)n,n = 2-8

CCSD(T) and MP2 results using the aug-cc-pV5Z basis set are reported for chain, cyclic and other structures of the clusters (H₂)_n, n?=?2-8, (CO₂)_n, n?=?2-6 and (HF)_n, n?=?2-8. In chain-like structures of (H₂)_n and (CO₂)_n, with the bonding type of the dimer maintained, the dissociation energy D_e of the dimer doubles for the trimer, triples for the tetramer, and so on. Due to these systems being dominated by short-range forces, interactions are essentially restricted to neighbouring monomers. For other types of (H₂)_n and (CO₂)_n structures, the multipliers relative to the dimerisation energy can be much higher. Dissociation energies for the hexamers in S₆ symmetry of both H₂ (379?cm^?1) and CO₂ (4925?cm^?1) are over ten times the respective dimerisation energies. For the chain-like trimer of HF, however, D_e is in excess of double the dimer value. Mainly due to longer-range dipolar forces, the interactions reach beyond the neighbouring monomers. The interaction energy between HF monomers in chains follows an approximate R^?2 (R being the F–F distance) relationship, The calculated dissociation energies of the HF octamer are 15,985?cm^?1 (factor of 10.4) for the chain, and 21,003?cm^?1 (factor of 13.7) for the C_6h cyclic structure.     

Reversible local-modification of surface structure on clean Ge(0 0 1) by scanning tunneling microscopy below 80 K

The structure of the clean Ge(0 0 1) surface is locally and reversibly changed between c(4×2) and p(2×2) by controlling the bias voltage of a scanning tunneling microscopy (STM) below 80 K. It shows hysteresis for the direction of the sample bias voltage change. The c(4×2) structure is observed with the sample bias voltage V_b?−0.7 V. This structure is maintained at V_b?0.7 V with increasing the bias voltage from −0.7 V. When V_b is higher than 0.8 V, the structure changes to p(2×2). This structure is then maintained at V_b?−0.6 V with decreasing the bias voltage from +0.8 V. The area of the structure change can be confined in the single dimer row just under the STM tip using a bias voltage pulse. In particular, the minimum transformed length is four dimers along the dimer row in the transformation from p(2×2) to c(4×2). The observed local change of the reconstruction with hysteresis is attributed to the energy transfer process from the tunneling electron to the Ge lattice in the local electric field due to the STM bias voltage. A phenomenological model is proposed for the structure changes. It is based on a cascade inversion of the dimer buckling orientation along the dimer row.     

Phase transition of thiophene molecules on Au(1 1 1) in solution

The orientation and packing arrangement of thiophene molecules on a well-defined Au(1 1 1) surface in 0.1 M HClO₄ solution have been investigated as a function of applied potentials by in situ scanning tunneling microscopy (STM) and electrochemical method. Thiophene molecules are found to form highly ordered adlayers in the double layer region. High-resolution STM images reveal different adlayer structures. Thiophene molecules take flat-lying and vertical orientation at 0.3 and 0.6 V, respectively. Compared with the results of electrochemical measurement, we concluded that the phase transition of thiophene on Au(1 1 1) occurs as the potential is changed between 0.1 and 0.65 V.     

Adsorption and organisation of para-hexaphenyl molecules on Si(100)

Para-hexaphenyl molecules (p-6P: C₃₆H₂₆) can be grown as nanofibres on various surfaces having optical properties of technological relevance. We report here the first observations of the initial stages of adsorption of individual p-6P molecules on Si(100)-(2×1) using room temperature Scanning Tunnelling Microscopy (STM). Depending on the substrate temperature, the hexaphenyl molecules adsorb in two configurations; indicating both weak and strong chemisorption. All six phenyl rings are clearly visible and the molecules are found to adsorb with characteristic angles between the long axis of the molecule and the silicon dimer rows. A statistical analysis of the spatial distribution of the molecules suggests that the clustering required for crystallographic nanofibre growth does not occur at the atomic scale under the experimental conditions used here.     

Scanning tunneling microscopy of surface-adsorbed fullerenes: C60, C70, and C84

Scanning tunneling microscopy (STM) is used to characterize partial monolayers of C₆₀, C₇₀, and C₈₄ adsorbed on the Au(1 1 1) surface at room temperature and under ambient conditions. A high degree of structural polymorphism is observed for monolayers of each of these fullerenes. For C₆₀, three lattice packings are observed, including a previously unreported 7 × 7 R21.8° structure that is stabilized by adjacent surface step defects. For C₇₀, two lattice packings are observed, and analysis of molecular features in STM images allows molecular binding geometry to be determined. In one of the two observed lattice structures, C₇₀ molecules align their long axis along the surface normal, while in the other, molecules align parallel to the surface and along a gold lattice direction. The parallel geometry is also preferred for isolated and loosely packed molecules on the surface. C₈₄ exhibits a large number of lattice orientations and no long-range order, and likely binds incommensurately on Au(1 1 1). Time series of images of partial C₇₀ monolayers show progressive surface modification as a result of perturbation by the STM tip; this is in contrast to the behavior of C₆₀, where alterations in surface structure at room temperature are thermally driven.     

Scanning tunnelling microscopy of charge-density waves in transition metal chalcogenides

We have used scanning tunnelling microscopes (STMs) operating at liquid helium and liquid nitrogen temperatures to image the charge-density waves (CDWs) in transition metal chalcogenides. The layer structure dichalcogenides TaSe₂, TaS₂, NbSe₂, VSe₂, TiSe₂ and TiS₂ have been studied including representative polytype phases such as 1T, 2H and 4Hb. Experimental results are presented for the complete range of CDW amplitudes and structures observed in these materials. In most cases both the CDW and the surface atomic structure have been simultaneously imaged. Results on the trichalcogenide NbSe₃ are also included.

The formation of the CDW along with the associated periodic lattice distortion gaps the Fermi surface (FS) and modifies the local density-of-states (LDOS) detected by the tunnelling process. The tunnelling microscopes have been operated mostly in the constant current mode which maps the LDOS at the position of the tunnelling tip. The relative amplitudes and profiles of the CDW superlattice and the atomic lattice have been measured and confirm on an atomic scale the CDW structures predicted by X-ray, electron and neutron diffraction. The absolute STM deflections are larger than expected for the CDW induced modifications of the LDOS above the surface and possible enhancement mechanisms are reviewed.

In the 2H trigonal prismatic coordination phases the CDWs involve a relatively small charge transfer and the atomic structure dominates the STM images. In the 1T octahedral coordination phases the charge transfer is large and the CDW structure dominates the STM image with an anomalously large enhancement of the STM profile. Systematic comparison of the STM profiles with band structure and FS information is included.

In the case of the 4Hb mixed coordination phases at the lowest temperatures two nearly independent CDWs form in alternate sandwiches. STM studies on 4Hb crystals with both octahedral and trigonal prismatic surface sandwiches have been carried out. The STM scans detect the relative strengths of the two CDWs as well as the interactions between the two types of CDW structure.

The STM scans are also able to detect defects and domain structure in the CDW image. Several examples will be given demonstrating the potential of the STM to detect these local variations in LDOS on an atomic scale. In contrast to the layer structure crystals the linear chain compound NbSe₃ shows a complex surface atomic structure as well as the formation of two CDWs. The surface atomic structure is resolved in the STM scans and profiles have detected the presence of the CDW modulation at 77K and 4.2K. These results demonstrate the feasibility of detecting CDW structure in the presence of complex atomic structure and using materials where dynamical CDW effects can also be studied by STM.

The range of STM results presented here show that the STM scans are extremely sensitive to the detail of the CDW structure and its effect on the LDOS. Although much of this structure has been deduced from diffraction studies, the ability to examine the CDW structure on an atomic scale with the STM is new. The sensitivity of the STM method suggests potential applications to a wide range of electronic structures in materials.