Infrared absorption of n- and p-type Fe-doped InP and mapping of the Fe distribution

The near-IR absorption spectra of n- and p-type Fe-doped InP were measured at room temperature in a wide range of Fe concentrations. A clear correlation was found between the Fe content in the InP samples which were only Fe-doped and the optical IR absorption. The absorption coefficient at 1000 nm depends linearly on the chemical Fe concentration. The same dependence was observed for Te/Fe (n-type) as well as for Zn/Fe (p-type) co-doped InP. This effect is used for a quantitative evaluation of the Fe distribution across whole wafers (mapping). The results are compared to those of other characterization techniques, e.g. selective etching, showing an excellent agreement.     

Optical and Magnetic Properties of Fe-Doped GaN Diluted Magnetic Semiconductors Prepared by MOCVD Method

Fe-doped GaN thin films are grown on c-sapphires by metal organic chemical vapour deposition method （MOCVD） Crystalline quality and phase purity are characterized by x-ray diffraction and Raman scattering measurements. There are no detectable second phases formed during growth and no significant degradation in crystalline quality as Fe ions are doped. Fe-related optical transitions are observed in photoluminescence spectra. Magnetic measurements reveal that the films show room-temperature ferromagnetic behaviour. The ferromagnetism may originate from carrier-mediated Fe-doped GaN diluted magnetic semiconductors or nanoscale iron clusters and FeN compounds which we have not detected.     

Study of the photoexcited carrier dynamics in InP:Fe using time-resolved reflection and photoluminescence spectra

The photoexcited carrier dynamics and photoluminescence of the undoped InP and Fe implanted InP was studied by time-resolved reflection and photoluminescence spectra. The decay times of reflection recovery and the radiative recombination for Fe implanted InP are shorter than those of undoped InP. Considering the surface recombination, a model was developed to simulate the reflection recovery dynamics, it agrees with the experimental results very well. Moreover, we obtained the ambipolar diffusion coefficient and the surface recombination velocity by using the model. For Fe-doped InP, the surface recombination velocity is much larger than that for the undoped InP, which is probably due to Fe^2+/3+ trapping centers and the large surface band bending. The PL decay time for Fe implanted InP is shorter than that for undoped InP, which is ascribed to the capture centers introduced by metallic precipitates.     

‘In-situ’ ink-jet printed Fe-doped MgO thin films with tunable ferromagnetism

Magnetism in wide band gap materials is of great interests for future spintronic device applications. We prepared MgO and Fe-doped MgO films ‘in-situ’ on substrates by inkjet printing, and investigated the ferromagnetism tuned by the doping of Fe, the annealing temperature and the film thickness. It is found that the Fe-doping improves the crystallinity of the films with lattice structure changed by annealing temperature. The saturation magnetization (M_s) of the films enhanced by ~5 times comparing with the pure MgO thin film of similar thickness (~90 nm), because of both the long-range ordering of localized 3d electrons in Fe and the defects induced magnetism. The M_s at 5 K decreases with the film thickness, which is mainly attributed to the interface induced ferromagnetism. The Fe-doped MgO films with ferromagnetism in this work can be used in future spintronic devices.     

利用第一性原理研究Ni掺杂ZnO铁磁性起源

采用基于密度泛函理论和局域密度近似的第一性原理分析了Ni掺杂ZnO磁性质.文中计算了8个不同几何结构的铁磁(FM)和反铁磁耦合能量,结果表明FM耦合更稳定.态密度结果显示Ni 3d 与O 2p发生杂化,导致费米能级附近电子态自旋极化.文中也分析了O空位对Ni掺杂ZnO铁磁性质的影响,O空位通过诱导电子调节FM耦合,从而稳定Ni掺杂ZnO铁磁性质,其强度足以引发室温铁磁性.通过Ni 3d能级耦合具体分析了Ni 掺杂ZnO铁磁性起源.另外,也分析了晶格应变对Ni掺杂ZnO FM耦合的影响. 关键词： 第一性原理 半导体 铁磁性 缺陷     

Fe掺杂单壁ZnS纳米管磁性质

采用第一性原理密度泛函理论系统研究Fe原子掺杂单壁ZnS纳米管的结构和磁性质.首先比较掺杂纳米管的稳定性.结果表明,掺杂纳米管的形成能比纯纳米管的形成能低,说明掺杂过程是一个放热反应.单掺杂纳米管的总磁矩等于掺杂的磁性原子的磁矩,主要来自Fe原子3d态的贡献.Fe原子掺杂单壁ZnS纳米管趋向于反铁磁态.为了得到稳定的铁磁态,用一个C原子替代掺杂体系中的一个S原子.计算发现铁磁态的能量比亚铁磁态低0.164 eV的.在铁磁态和反铁磁态之间存在的巨大的能量差,表明此掺杂体系可能获得室温铁磁性.     

磷化铟中铁原子替位与填隙的热致转变及其对材料性质的影响

高温退火后掺铁半绝缘(SI)InP单晶转变为n型低阻材料.利用霍尔效应(Hall)，热激电流谱(TSC)，深能级瞬态谱(DLTS)，X射线衍射等方法分别研究了退火前后InP材料的性质和缺陷.结果表明受高温热激发作用部分铁原子由替位转变为填隙，导致InP材料缺少深能级补偿中心而发生导电类型转变.通过比较掺杂、扩散和离子注入过程Fe原子的占位和激活情况分析了这一现象的机理和产生原因. 关键词： 磷化铟 铁激活 退火 半绝缘     

Control of ferromagnetism in Fe-doped In2O3 by carbothermal annealing

Fe-doped In₂O₃ powders were prepared using the sol–gel method. Solubility of Fe ions in the In₂O₃ host compound reached up to 50%. Lattice constant decreased linearly as Fe doping concentration increased, indicating that Fe ions were incorporated into the host lattice and occupied the In sites. Ferromagnetism could be obtained from the samples with carbothermal annealing. The dependence of ferromagnetism on the carbon dosage was observed. The greater the carbon dosage, the higher the concentration of oxygen vacancies (V_o) created, and the more robust the ferromagnetism.     

FeMn掺杂AlN薄膜的制备及其特性研究

采用直流磁控共溅射技术, 以Ar与N₂为源气体, 硅片为衬底成功地制备了Fe, Mn掺杂AlN薄膜. 利用X射线衍射和拉曼光谱研究了工作电流、靶基距离等工艺参数的改变对薄膜结构的影响. 利用扫描电子显微镜和能谱分析仪对薄膜的表面形貌和组成成分进行了分析. 利用振动样品磁强计在室温下对Fe, Mn掺杂AlN薄膜进行了磁性表征. Mn掺杂AlN薄膜表现出顺磁性的原因可能是由于Mn掺杂浓度较高, 在沉积过程部分Mn以团簇的形式存在, 反铁磁性的Mn团簇减弱了体系的铁磁交换作用. Fe掺杂AlN薄膜表现出室温铁磁性, 这可能是AlFeN三元化合物作用的结果. 随着Fe 掺杂AlN薄膜中Fe原子浓度从6.81%增加到16.17%, 其饱和磁化强度M_s由0.27 emu·cm^-3逐渐下降到0.20 emu·cm^-3, 而矫顽力H_c则由57 Oe增大到115 Oe (1 Oe=79.5775 A/m), 这一现象与Fe离子间距离的缩短及反铁磁耦合作用增强有关. 关键词： 直流磁控共溅射 氮化铝薄膜 结构 磁性     

Effect of thermal annealing on the structure and magnetism of Fe-doped ZnO nanocrystals synthesized by solid state reaction

High purity Fe₂O₃/ZnO nanocomposites were annealed in air at different temperatures between 100 and 1200 °C to get Fe-doped ZnO nanocrystals. The structure and grain size of the Fe₂O₃/ZnO nanocomposites were investigated by X-ray diffraction 2θ scans. Annealing induces an increase of the grain size from 25 to 195 nm and appearance of franklinite phase of ZnFe₂O₄. Positron annihilation measurements reveal large number of vacancy defects in the interface region of the Fe₂O₃/ZnO nanocomposites, and they are gradually recovered with increasing annealing temperature. After annealing at temperatures higher than 1000 °C, the number of vacancies decreases to the lower detection limit of positrons. Room temperature ferromagnetism can be observed in Fe-doped ZnO nanocrystals using physical properties measurement system. The ferromagnetism remains after annealing up to 1000 °C, suggesting that it is not related with the interfacial defects.     

Formation and characterization of boride coatings thermochemically grown on the Fe64Ni36 alloy

Zirconium oxide (zirconia) exists in three crystalline forms of monoclinic, tetragonal and cubic structures at atmospheric pressures. The cubic form of zirconia is well known for its mechanical, electrochemical and optical applications. Fe-doped cubic zirconia (high temperature phase) compositions are synthesized by microwave combustion method. Here, we present a Mössbauer investigation of Zr_1???x Fe _x O₂ composition within a range of Fe (0.03 < x < 0.09). ⁵⁷Fe Mössbauer spectra were recorded at room temperature and at low temperature (77 K) for all samples. 3% Fe-doped ZrO₂ shows doublet and the corresponding 6% and 9% Fe-doped ZrO₂ samples show superimposed sextet and doublets. The isomer shift and quadrupole moment indicate, Iron to be in III oxidation state and to occupy different octahedral sites, associated with some amount of disorder. X-ray powder diffraction pattern of Fe-doped ZrO₂ samples appear as very well crystalline. The Miller indices refer to the cubic fluorite-type ZrO₂ structure. The magnetic behavior shows increase in moment and decrease in coercivity, with increase in Fe concentration. The M vs. H plots of the as-prepared Zr_1-x Fe _x O₂ essentially show typical hysteresis loops, indicating room temperature ferromagnetism. Thus, the introduced microwave combustion route is an effective process to achieve multifunctional Fe-doped Zirconia with coexistent magnetic properties.     

Electronic structure and magnetic coupling properties of Gd-doped AlN: first-principles calculations

In this work, the electronic structure and magnetic coupling properties of Gd doped AlN have been investigated using first-principles method. We found that in the AlN:Gd system, due to the s-f coupling allowed by the symmetry, the exchange splitting of the conduction band is much larger than that of the valence band, which makes the electron-mediated ferromagnetism possible in this material. This property is also confirmed by the energy differences between anti-ferromagnetic and ferromagnetic phase for Al₁₄Gd₂N₁₆ with different concentrations of electrons (holes), as well as by the calculated exchange constants. The result indicates that Gd-doped AlN is a promising candidate for the applications in future spintronic devices.     

深能级缺陷对半绝缘InP材料电学补偿的影响

对铁掺杂和高温退火非掺杂磷化铟制备的两种半绝缘材料的电学补偿和深能级缺陷进行了分析和比较.根据热激电流谱(TSC)测得的深能级缺陷结果，分析了这两种半绝缘InP材料中深能级缺陷对电学补偿的影响.在掺铁半绝缘InP材料中，由于存在高浓度的深能级缺陷参与电学补偿，降低了材料的补偿度和电学性能.相比之下，利用磷化铁气氛下高温退火非掺InP获得的半绝缘材料的深能级缺陷浓度很低，通过扩散掺入晶格的铁成为唯一的深受主补偿中心钉扎费米能级，材料表现出优异的电学性质.在此基础上给出了一个更为广泛的半绝缘InP材料的电学补偿模型.     

Structural characterization and ferromagnetic behavior of Fe-doped TiO2 powder by high-energy ball milling

Fe-doped TiO₂ powder was prepared by high-energy ball milling, using TiO₂ Degussa P-25 and α-Fe powders as the starting materials. The structure and magnetic properties of the Fe-doped TiO₂ powder were studied by X-ray diffraction, ⁵⁷Fe Mossbauer spectroscopy and vibrating sample magnetometer. The Reitveld refinement of XRD revealed that ball milling not only triggered incorporation of Fe in TiO₂ lattice but also induced the phase transformation from anatase to rutile in TiO₂ and consequently the milled Fe-doped TiO₂ powder contained only rutile.⁵⁷Fe Mössbauer effect measure showed that Fe atoms existed in Fe²⁺ and Fe³⁺ state, which were assigned to the solid solution Fe_xTi_1−xO₂. The magnetization measurements indicated that the milled Fe-doped TiO₂ powder was ferromagnetic above room temperature. The ferromagnetism in our milled Fe-doped TiO₂ powder seemingly does not come from Fe and iron oxides particles/clusters but from the Fe-doped TiO₂ powder matrices.     

Effect of Sr concentration on microstructure and magnetic properties of (Ba1−xSrx)(Ti0.3Fe0.7)O3 ceramics

Fe-doped (Ba_1−xSr_x)TiO₃ ceramics were prepared by solid-state reaction, and ferromagnetism was realized at room temperature. The microstructure and magnetism were modified by the Sr concentration control (0≤x≤75 at%) at a fixed Fe concentration, and the relevant magnetic exchange mechanism was discussed. All the samples are shown to have a single perovskite structure. When increasing the Sr concentration, the phase structure is transformed from a hexagonal perovskite into a cubic perovskite, with a monotonic decrease in lattice parameters induced by ionic size effect. The room-temperature ferromagnetism is expected to originate from the super-exchange interactions between Fe³⁺ on pentahedral and octahedral Ti sites mediated by the O²⁻ ions. The increase in Sr addition modifies two main influencing factors in magnetic properties: the ratio of pentahedral to octahedral Fe³⁺ and the concentration of oxygen vacancies, leading to a gradually enhanced saturation magnetization. The highest value, obtained for Fe-doped (Ba_0.25Sr_0.75)TiO₃, is an order of magnitude higher than that of the Fe-doped BaTiO₃ system with similar Fe concentration and preparation conditions, which may indicate (Ba_1−xSr_x)TiO₃ as a more suitable matrix material for multiferroic research.     

Structural and magnetic properties of Si1−xGex thin films implanted with Fe ions

A series of Si_1?xGe_x (x = 1, 0.848, 0.591, 0.382, 0.209, 0.064, 0) thin films prepared by ion beam sputtering were implanted with Fe ions to different doses using the metal vapor vacuum arc technique. X-ray absorption fine structure (XAFS) was used to characterize the local microstructure around the Fe atoms in Fe-doped Si_1?xGe_x samples. Structural analysis showed that for annealed samples of Ge-rich thin films (including pure Ge) implanted with low doses of Fe ions, almost all the Fe ions substituted at Ge sites. However, an anti-ferromagnetic Fe₆Ge₅ impurity phase existed in the annealed samples implanted with high doses of Fe. It was also found that the solubility of Fe ions was highest in pure Ge films and that with increasing Si concentration, the solubility decreased. Magnetic analysis showed that for the as-implanted and annealed samples of Ge-rich thin films implanted with Fe ions, room-temperature ferromagnetism was strongest in the pure Ge series of samples and that as the Ge concentration decreased, the ferromagnetism at room temperature weakened. In addition, annealing could increase the number of Fe ions at substitution sites, which resulted in the observed increase in the saturated magnetization after annealing. Experiment and theoretical analysis showed that the ferromagnetism of Fe-doped Ge-rich Si_1?xGe_x thin films samples originated from the s, p–d exchange interactions between the Si_1?xGe_x matrix and those Fe ions which substituted at Ge sites and that the ferromagnetism was mediated by carriers.     

Five Simultaneously Q-Switch Mode-Locked Passive Laser Modulators

Five types of passive Q-switched as well as simultaneously Q-switch mode-locked modulators: plastic dye sheets (Kodak 9850 cellulose acetate dye sheets), lithium fluoride crystals containing F₂ ⁻ color centers (LiF:F₂ ⁻), chromium-doped yttrium–aluminum–garnet crystals (Cr⁴⁺:YAG), ionic color filter glass (Schott RG1000 color filter glass), and the single crystal semiconductor wafers (GaAs, Fe-doped InP, Zn-doped InP, S-doped InP, etc.) used for modulation of the Nd:hosted(Nd:YAG, Nd:YVO₄, and Nd:LSB) lasers were investigated in detail in our research. We also investigated applications of the Q-switch mode-locked pulse train for the development of a higher resolution solid-state laser range finder.     

Effect of W co-doping on the optical,magnetic and electrical properties of Fe-doped BaSnO3

The effect of W co-doping on the optical, magnetic and electrical properties of Fe-doped BaSnO₃ has been studied. Polycrystalline BaSnO₃, BaSn_0.96Fe_0.04O₃ and BaSn_0.95Fe_0.04W_0.01O₃ samples were prepared using solid state reaction. In the analysis of powder X-ray diffraction patterns, the samples were found to be free of secondary phases. Diffuse reflectance spectra evidenced the substitution of Fe and W for Sn in the host BaSnO₃. Micro-Raman spectra confirmed the existence of oxygen vacancies in the samples. Upon W-1% co-doping, the ferromagnetic character of Fe-4% doped BaSnO₃ is suppressed drastically and its Curie temperature is reduced to 310 K from 462 K. The existence of F-centers and ferromagnetic interactions at room temperature is evidenced by the electron paramagnetic resonance and ferromagnetic resonance signals observed in the electron spin resonance spectra of the undoped and Fe-4% doped, (Fe-4% and W-1%) co-doped BaSnO₃ samples respectively. Suppression of ferromagnetism upon W co-doping is due to the fact that each W⁶⁺ ion donates two electrons to the host lattice and it reduces the number of oxygen vacancies that are essential for ferromagnetism to exist in the Fe-doped BaSnO₃ samples.     

AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO<Subscript>4</Subscript> laser

An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.     

Room temperature magnetism of Fe doped CdS nanocrystals

Undoped and Fe doped CdS nanocrystals with Fe content of 2–5 at% of average crystallite size 1.2–2 nm have been obtained using chemical co-precipitation method with 2-mercaptoethonal as capping agent at 80 °C. X-ray diffraction (XRD) results showed that the undoped CdS nanocrystals were in mixed phase of cubic and hexagonal, where as the doped CdS nanocrystals were in hexagonal phase. Room-temperature ferromagnetism has been observed in Fe-doped CdS nanocrystals. Magnetic studies indicated diamagnetism in undoped, ferromagnetism in lightly doped (2 and 3 at%) and paramagnetism in samples of higher Fe content (4 and 5 at%). The substitutional incorporation of Fe³⁺ ion in Cd²⁺ sites was reflected in structural and electron paramagnetic resonance (EPR) measurements. Isolated as well as interacting Fe³⁺ ions are observed in EPR.