Tunable Ba_0.5 Sr_0.5 TiO₃ film bulk acoustic resonators using SiO₂ /Mo Bragg reflectors

Tunable and switchable Ba 0.5 Sr 0.5 TiO 3 film bulk acoustic resonators(FBARs) based on SiO 2 /Mo Bragg reflectors are explored,which can withstand high temperature for the deposition of Ba x Sr 1 x TiO 3(BST) films at 800 C.The dc bias-dependent resonance may be attributed to the piezoelectricity of the BST film induced by an electrostrictive effect.The series resonant frequency is strongly dc bias-dependent and shifts downwards with dc bias increasing,while the parallel resonant frequency is only weakly dc bias-dependent and slightly shifts upwards at low dc bias(< 45 V) while downwards at higher dc bias.The calculated relative tunability of shifts at series resonance frequency is around 2.3% and the electromechanical coupling coefficient is up to approximately 8.09% at 60-V dc bias,which can be comparable to AlN FBARs.This suggests that a high-quality tunable BST FBAR device can be achieved through the use of molybdenum(Mo) as the high acoustic impedance layer in a Bragg reflector,which not only provides excellent acoustic isolation from the substrate,but also improves the crystallinity of BST films withstanding higher deposition temperature.     

Microstructure and electrical properties of Ba0.5Sr0.5TiO3 thin films prepared on copper foils with La2O3 buffer layers

Ba_0.5Sr_0.5TiO₃ (BST) thin films were deposited on copper foils via sol-gel method with La₂O₃ as a buffer layer. The films were processed in almost inert atmosphere so that the substrate oxidation was avoided while allowing the perovskite film phase to crystallize. The existence of a La₂O₃ buffer layer between the BST thin film and Cu foil improved the dielectric constant and reduced the leakage current density of the BST thin film. Meanwhile, the BST thin film exhibited ferroelectric character at room temperature, which was contrast to the para-electric behavior of the film without the buffer layer. Effects of La₂O₃ buffer layer on the crystallizability and microstructure of BST thin films were also investigated.     

立方(Ba0.5Sr0.5)TiO3高压诱导带隙变化的第一性原理研究

采用基于密度泛函理论(DFT)的第一性原理计算研究了 (Ba_0.5Sr_0.5)TiO₃ (BST) 晶体在高压下的电子结构及能带变化行为. 研究结果发现,随着压强的增加,BST能带间隙先增加,在压强为55 GPa时达到最大值,然后减小,这些有趣的结果将有助于开发与设计新的BST铁电器件. 进一步地,通过电子态密度和密度分布图的研究分析可知:在低压区域(055 GPa),则是出现的离域现象占主导(电子的离域作用超过键态的作用),从而使带隙减小. 关键词： 钛酸锶钡 第一性原理 高压 能带间隙     

Improvement of dielectric tunability and loss tangent of (Ba,Sr)TiO3 thin films with K doping

Ba_0.6Sr_0.4TiO₃ thin films doped with K were deposited on Pt/Ti/SiO₂/Si substrates by chemical solution deposition method. The structure, surface morphology, and dielectric and tunable properties of Ba_0.6Sr_0.4TiO₃ thin films have been studied in detail. The K content in Ba_0.6Sr_0.4TiO₃ thin films has a strong influence on the material's properties including surface morphology, dielectric and tunable properties. It is found that the Curie temperature of K-doped Ba_0.6Sr_0.4TiO₃ films shifts to higher values compared with that of undoped Ba_0.6Sr_0.4TiO₃ thin films, which leads to a dielectric enhancement of K-doped Ba_0.6Sr_0.4TiO₃ films at room temperature. At the optimized content of 0.02 mol, the dielectric loss tangent is reduced significantly from 0.057 to 0.020. Meanwhile, the tunability is enhanced obviously from 26% to 48% at the measured frequency of 1 MHz and the maximum value of the figure of merit is 23.8. This suggests that such films have potential applications for tunable devices.     

Effect of annealing temperature on microstructure, optical and electrical properties of sputtered Ba0.9Sr0.1TiO3 thin films

Ba_0.9Sr_0.1TiO₃ (BST) thin films were deposited on fused quartz and Pt/TiN/Si₃N₄/Si substrates by radio frequency magnetron sputtering technique. Microstructure and chemical bonding states of the BST films annealed at 700 °C were characterized by field emission scanning electron microscopy, X-ray photoelectron spectroscopy, glancing angle X-ray diffraction and Raman spectrum. Optical constants including refractive indices, extinction coefficients and bandgap energies of the as-deposited BST film and the BST films annealed at 650, 700 and 750 °C, respectively, were determined from transmittance spectra by envelope method and Tauc relation. Dielectric constant and remnant polarization for the BST films increase with increasing annealing temperature. Leakage current density-applied voltage (J–V) data indicate that the dominant conduction mechanism for all the BST capacitors is the interface-controlled Schottky emission under the conditions of 14 V < V < 30 V and −30 V < V < −14 V. Furthermore, the inequipotential J–V characteristics for the BST films annealed at various temperatures are mainly attributed to the combined effects of the different thermal histories, relaxed stresses and strains, and varied Schottky barrier heights in the BST/Pt and Pt/BST interfaces.     

择优取向MgO缓冲层上制备的硅基Ba0.7Sr0.3TiO3薄膜的结构和性能研究

分别采用sol-gel法和磁控溅射法在Si（001）单晶衬底上制备出（111）和（001）取向的MgO缓冲层薄膜,随后在其上生长Ba_0.7Sr_0.3TiO₃（BST30）铁电薄膜.通过X射线衍射,扫描电子显微镜,原子力显微镜等方法研究了薄膜的微结构.实验结果发现,在较厚的MgO（001）缓冲层上可长出（101）取向的BST30薄膜,而在较薄的MgO（111） 缓冲层上则表现出（101）和（111）取向相互竞争的现象,随着MgO（111）缓冲 关键词： 0.7Sr_0.3TiO₃')" href="#">Ba_0.7Sr_0.3TiO₃ 铁电薄膜 择优取向 sol-gel     

溶胶-凝胶法制备MgO/(Ba0.8Sr0.2)TiO3多层薄膜及其介电和漏电特性研究

采用改进的溶胶-凝胶方法在LaNiO₃/Si(100)衬底上制备了MgO/(Ba_{0.8Sr0.2)TiO3多层薄膜.实验结果表明，MgO层的引入改变了(Ba0.8}Sr_0.2)TiO₃的介电特性和漏电流行为，使薄膜的漏电 流降低了3个数量级，但介电常数也有相应降低.漏电流的显著降低是由MgO子层的高阻特性 以及微量Mg向(Ba_0.8关键词： 0.8Sr_0.2)TiO₃多层薄膜')" href="#">MgO/(Ba_0.8Sr_0.2)TiO₃多层薄膜 漏电流 介电常 数     

Large blue shift in the optical band-gap of sol-gel derived Ba0.5Sr0.5TiO3 thin films

In this paper, we report and analyze the large blue shift in the optical band-gap of sol-gel derived Ba_0.5Sr_0.5TiO₃ (BST) thin films. BST films of different thickness (150 nm, 320 nm and 480 nm respectively) were deposited layer by layer onto fused quartz substrates by a spin coating technique. The drying temperature for individual layers (pre-sintering temperature) was varied as 400, 500 and 600 ^°C. A large blue shift in the band-gap was observed (with a value 4.70 eV compared to the bulk value of 3.60 eV) for films pre-sintered at 400 ^°C, which decreased with increase in the pre-sintering temperature. To date such blue shifts have been attributed to grain size reduction, stress and the amorphous nature of the films. Here, the blue shift has been correlated with the presence of charge carriers generated by oxygen vacancies and explained on the basis of the Burstein-Moss effect.     

溶胶-凝胶法制备(Ba0.7Sr0.3)TiO3/LaNiO3异质薄膜及其结构和介电性质研究

采用改进的溶胶-凝胶方法在单晶Si(100)衬底上制备了介电性能优异的(Ba_0.7Sr_0.3)TiO₃/LaNiO₃异质薄膜.实验发现，在750 ℃下 、O₂气氛中晶化的LaNiO₃薄膜的电阻率最小.C-V与I-V特性测量表明(Ba_0.7Sr_0.3)TiO₃薄膜具有优异的介电性能，在频率为50kHz、零偏压下的相对介电常数ε_r>300，偏压为6V时漏电流密度J_L<1.2×10^-6A/cm². 关键词： xSr_1-x)TiO_３铁电薄膜')" href="#">(Ba_xSr_1-x)TiO_３铁电薄膜 ３底电极')" href="#">LaNiO３底电极 溶胶-凝胶法     

Photoluminescence at room temperature in Ba0.5Sr0.5TiO3 ceramics

We present in this paper the experimental results of photoluminescence spectra of Ba_0.5Sr_0.5TiO₃ ceramics. An emission band centered at about 920 nm has been observed at room temperature. When we change the amount of oxygen vacancies in these samples by thermal treatment, these samples show an enhancement of luminescence. Our experimental results indicate that the origin of the photoluminescence is related to the oxygen vacancies in these samples.     

发光二极管用红色荧光粉Sr0.8-xBaxEu0.2WO4的制备和性质研究

采用化学共沉淀法制备了不同Ba²⁺掺杂浓度、 不同煅烧温度的Sr_0.8-xBa_xEu_0.2WO₄红色荧光粉. 研究了样品的晶体取向和晶格 畸变对发光性质的影响, 实验结果表明: 合成的Sr_0.8-xBa_xEu_0.2WO₄红色荧光粉为四方相, 样品中Eu³⁺的⁵D₀–⁷F₂跃迁的红光能被近紫外光和蓝光有效激发. 适量的Ba²⁺离子取代部分的Sr²⁺提高了Sr_0.8Eu_0.2WO₄荧光粉的发光强度, Ba²⁺掺杂浓度的改变对基质的晶格参数、晶体对称性和发光性能影响较大, Ba²⁺的最佳掺杂量为30%.     

Effect of Sr concentration on microstructure and magnetic properties of (Ba1−xSrx)(Ti0.3Fe0.7)O3 ceramics

Fe-doped (Ba_1−xSr_x)TiO₃ ceramics were prepared by solid-state reaction, and ferromagnetism was realized at room temperature. The microstructure and magnetism were modified by the Sr concentration control (0≤x≤75 at%) at a fixed Fe concentration, and the relevant magnetic exchange mechanism was discussed. All the samples are shown to have a single perovskite structure. When increasing the Sr concentration, the phase structure is transformed from a hexagonal perovskite into a cubic perovskite, with a monotonic decrease in lattice parameters induced by ionic size effect. The room-temperature ferromagnetism is expected to originate from the super-exchange interactions between Fe³⁺ on pentahedral and octahedral Ti sites mediated by the O²⁻ ions. The increase in Sr addition modifies two main influencing factors in magnetic properties: the ratio of pentahedral to octahedral Fe³⁺ and the concentration of oxygen vacancies, leading to a gradually enhanced saturation magnetization. The highest value, obtained for Fe-doped (Ba_0.25Sr_0.75)TiO₃, is an order of magnitude higher than that of the Fe-doped BaTiO₃ system with similar Fe concentration and preparation conditions, which may indicate (Ba_1−xSr_x)TiO₃ as a more suitable matrix material for multiferroic research.     

Strongly oriented BST films on La0.9Sr1.1NiO4 electrodes deposited on various substrates for integration of high capacitances on silicon

In this study, we demonstrate the successful oriented growth of Ba_0.6Sr_0.4TiO₃(h 0 0)/La_0.9Sr_1.1NiO₄(0 0 l) stacks by pulsed laser deposition on SiO₂/Si for application in integrated capacitances. We show that for specific deposition conditions the La_0.9Sr_1.1NiO₄ layer spontaneously grows along its c-axis both on SiO₂/Si and on Pt/Ti/SiO₂/Si substrates, serving as a template for the subsequent oriented growth of Ba_0.6Sr_0.4TiO₃ (BST). Moreover, as the resistivity of the La_0.9Sr_1.1NiO₄ layer is ∼1 mΩ cm, it also fulfills the function of bottom electrode for integration of perovskite-based capacitors on silicon. This holds the promise of integrating epitaxial BST with very high dielectric constant compared to polycrystalline BST films. Still, preliminary capacitance measurements on Al/BST/La_0.9Sr_1.1NiO₄/SiO₂/Si capacitors indicate that the stack deposition needs further optimization.     

Thickness-dependent tunable characteristics of (Ba0.5Sr0.5)0.925K0.075TiO3 thin films prepared by pulsed laser deposition

The thickness-dependent dielectric properties and tunability of pulsed laser deposited (Ba_0.5Sr_0.5)_0.925K_0.075TiO₃ (BSKT) thin films with different thickness ranging from 80 to 300 nm has been investigated. Dielectric properties of the BSKT thin films are substantially improved as the BSKT film thickness increases, which can be explained by the model of a low-permittivity dead layer that is connected in series with the bulk region of the film. The estimated values of thickness and the average dielectric constant for the dead layer are 2.4 nm and 23.5, respectively, in a Pt/BSKT/Pt capacitor structure. The tunability and figure of merit increased with increasing film thickness, which are attributed to the change in lattice parameter and the dead layer effect.     

Structure, ferroelectric and piezoelectric properties of (Bi1−x−yNa0.925−x−yLi0.075)0.5BaxSryTiO3 lead-free piezoelectric ceramics

Lead-free multi-component ceramics (Bi_1−x−yNa_{0.925−x−y}Li_0.075)_0.5Ba_xSr_yTiO₃ have been prepared by an ordinary sintering technique and their structure and electrical properties have been studied. All the ceramics can be well-sintered at 1100 °C. X-ray diffraction patterns shows that Li⁺, Ba²⁺ and Sr²⁺ diffuse into the Bi_0.5Na_0.5TiO₃ lattices to form a new solid solution with a pure perovskite structure, and a morphotropic phase boundary (MPB) is formed at 0.04 < x < 0.08. As compared to pure Bi_0.5Na_0.5TiO₃ ceramic, the coercive field E_C of the ceramics decreases greatly and the remanent polarization P_r of the ceramics increases significantly after the formation of the multi-component solid solution. Due to the MPB, lower E_C and higher P_r, the piezoelectricity of the ceramics is greatly improved. For the ceramics with the compositions near the MPB (x = 0.04–0.08 and y = 0.02–0.04), piezoelectric coefficient d₃₃ = 133–193 pC/N and planar electromechanical coupling factor k_P = 16.2–32.1%. The depolarization temperature T_d reaches a minimum value near the MPB. The temperature dependences of the ferroelectric and dielectric properties suggest that the ceramics may contain both the polar and non-polar regions at temperatures near/above T_d.     

Electrically and magnetically tunable microwave device using (Ba, Sr) TiO3/Y3Fe5O12 multilayer

Ferroelectric (Ba_0.6Sr_0.4)TiO₃ (BST) thin films have been deposited by pulsed laser deposition onto single-crystal Y₃Fe₅O₁₂ (YIG) substrates with/without a MgO buffer layer. The structure and microwave properties of the BST films have been investigated as a function of substrate orientation and O₂ deposition pressures (50-800 mTorr). The crystallographic orientation of BST film varies with the deposition conditions. The dielectric properties of the ferroelectric were measured using interdigitated capacitors deposited on top of the BST film. BST films exhibit high tunability (20-40%) and high dielectric Q=1/cos' (30-50) with a dc bias field of 67 kV/cm at 10 GHz. A coplanar waveguide transmission line was fabricated from a (001)-oriented BST film on (111)YIG which exhibited a 17° differential phase shift with an applied dc bias field of 21 kV/cm (10 GHz). An equivalent differential phase shift was achieved with a magnetic field of 160 Gauss.     

Ba0.5Sr0.5TiO3有序构型的第一性原理研究

采用第一性原理计算了Ba_0.5Sr_0.5TiO₃三种有序构型的晶格结构和对应的电子结构,晶格结构的详细分析结果表明BST{100}有序构型为四方相,Ti-O八面体中Ti原子和Ba-Sr平面上的O原子沿[100]方向分别偏心位移0.040 Å和0.065 Å,八面体畸变导致反平行自发极化出现,构型处于反铁电态. BST{110}构型也是四方相,并且(110)和(1 关键词： 钛酸锶钡 第一性原理 有序结构 铁电性     

Characteristics of Ba xSr 1–xTiO 3 thin films grown by pulsed laser ablation of rotating split targets of BaTiO 3 and SrTiO 3

We have grown heterostructures of Ba_xSr_1-xTiO₃(BST)/La_0.7Sr_0.3MnO₃(LSMO) on LaAlO₃(LAO) substrates by the pulsed laser deposition method. BST films with x=0.2,0.5,0.7 and 0.8 have been prepared using a novel rotating split-target arrangement. The lattice constant of the BST films is found to vary linearly with Ba/Sr ratio. An excellent cube-on-cube epitaxial relationship of (100)_BST||(100)_LSMO||(100)_LAO has also been obtained. Scanning electron microscopy studies have revealed smooth and crack-free BST films with a uniform grain size of about 100 nm. Dielectric measurements, made with patterned Au top electrodes and conducting LSMO bottom layers, have shown a maximum permittivity of approximately 280 at 5 kHz in BST films with x=0.7. P–E loop analyses of the Ba_0.7Sr_0.3TiO₃ and Ba_0.8Sr_0.2TiO₃ films have yielded remnant polarization values of 1.66 and 1.81C/cm², respectively. PACS 81.15Fg; 68.55Jk; 77.55+f     

溶胶-凝胶法制备的Ba0.8Sr0.2TiO3薄膜的结构及铁电性质研究

采用0.05mol/L的前驱体溶液,利用溶胶-凝胶法成功制备了室温下具有优良铁电性质的Ba_0.8Sr_0.2TiO₃ (BST)薄膜.X射线衍射分析表明,制得的BST薄膜室温下呈四方相,场发射扫描电子显微观测显示BST薄膜表面平整、致密、无裂纹出现,薄膜晶粒呈柱状结构、尺寸在150nm左右.电学测量表明制备的BST薄膜室温下具有优良的铁电性能.薄膜的剩余极化P_r约为35μC/cm²,矫顽电场E关键词：     

Vibrational spectroscopic studies on Ba0.8Sr0.2TiO3 thin films prepared by RF sputtering technique

Thin films of Ba_0.8Sr_0.2TiO₃ have been deposited on p-type Si substrate by radio frequency magnetron sputtering. Polycrystalline bulk Ba_0.8Sr_0.2TiO₃ sample has also been studied for comparison. X-ray diffraction patterns reveal that both the bulk sample and thin films are polycrystalline without any preferential orientation and belong to paraelectric cubic phase. We have compared the room temperature Raman and IR spectra of powder and thin films (both annealed and as-deposited) of Ba_0.8Sr_0.2TiO₃. The extra feature in the Raman spectrum for the annealed film has been explained as due to the presence of intergrain stresses from the submicron size grains in it.