On the Mixing of K0-K0,D0-D0 and B0-B0

Systematically, we study the long-range contribution to the mixing effects based on the potential model while the QCD correction in Hamiltonian being taken into account. We have found that the long-distance effects are important to K⁰-K⁰ and D⁰-D⁰, but B⁰-B⁰. The QCD correction causes a change to the results, enhances the mixing, for K⁰-K⁰, by a factor of 1.3, whereas for D⁰-D⁰ it is a suppression of about 0.7. The absorptive parts which give rise to ΔΓ have also been discussed and the diquark-intermediate-state contributions to D and B systems are included.     

High resolution analysis of the rotational levels of the (0 0 0), (0 1 0), (1 0 0), (0 0 1), (0 2 0), (1 1 0) and (0 1 1) vibrational states of SO2

A high resolution (0.0018 cm⁻¹) Fourier transform instrument has been used to record the spectrum of an enriched ³⁴S (95.3%) sample of sulfur dioxide. A thorough analysis of the ν₂, 2ν₂ − ν₂, ν₁, ν₁ + ν₂ − ν₂, ν₃, ν₂ + ν₃ − ν₂, ν₁ + ν₂ and ν₂ + ν₃ bands has been carried out leading to a large set of assigned lines. From these lines ground state combination differences were obtained and fit together with the existing microwave, millimeter, and terahertz rotational lines. An improved set of ground state rotational constants were obtained. Next, the upper state rotational levels were fit. For the (0 1 0), (1 1 0) and (0 1 1) states, a simple Watson-type Hamiltonian sufficed. However, it was necessary to include explicitly interacting terms in the Hamiltonian matrix in order to fit the rotational levels of the (0 2 0), (1 0 0) and (1 0 1) states to within their experimental accuracy. More explicitly, it was necessary to use a ΔK = 2 term to model the Fermi interaction between the (0 2 0) and (1 0 0) levels and a ΔK = 3 term to model the Coriolis interaction between the (1 0 0) and (0 0 1) levels. Precise Hamiltonian constants were derived for the (0 0 0), (0 1 0), (1 0 0), (0 0 1), (0 2 0), (1 1 0) and (0 1 1) vibrational states.     

Ruthenium adsorption and diffusion on the GaN(0 0 0 1) surface

We report first principles calculations to analyze the ruthenium adsorption and diffusion on GaN(0 0 0 1) surface in a 2×2geometry. The calculations were performed using the generalized gradient approximation (GGA) with ultrasoft pseudopotential within the density functional theory (DFT). The surface is modeled using the repeated slabs approach. To study the most favorable ruthenium adsorption model we considered T₁, T₄ and H₃ special sites. We find that the most energetically favorable structure corresponds to the Ru- T₄ model or the ruthenium adatom located at the T₄ site, while the ruthenium adsorption on top of a gallium atom (T₁ position) is totally unfavorable. The ruthenium diffusion on surface shows an energy barrier of 0.612 eV. The resultant reconstruction of the ruthenium adsorption on GaN(0 0 0 1)- 2×2 surface presents a lateral relaxation of some hundredth of Å in the most stable site. The comparison of the density of states and band structure of the GaN(0 0 0 1) surface without ruthenium adatom and with ruthenium adatom is analyzed in detail.     

Adsorption structure of germanium on the Ru(0 0 0 1) surface

Coverage-dependent adsorption energy of the Ge/Ru(0 0 0 1) growth system and the geometrical distortions of the most stable adsorption structure are investigated through first-principles calculations within density functional theory. A local minimum in adsorption energy is found to be at a Ge coverage of 1/7 monolayer with a Ru(0 0 0 1)- symmetry. Based on this stale superstructure, the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) images are simulated by means of surface local-density of states (LDOS). The results are consistent well with the STM measurements on the phase for Ge overlayer on Ru(0 0 0 1). From this stimulation, the relations between the STM images and the lattice distortion are also clarified.     

Electron-phonon interaction in magnesium: From the monolayer to the Mg(0 0 0 1) surface

We report ab initio study of the electron-phonon coupling in a free standing magnesium monolayer and at the Mg(0 0 0 1) surface. The calculations were carried out using a linear-response approach in the plane-wave pseudopotential representation. Eliashberg spectral function α²F(ω) averaged over electron states at the Fermi surface is presented for the monolayer while for the Mg(0 0 0 1) surface, we compute the electron-phonon spectral function α²F_k,i(ω) for surface states at the and points.     

Structure and reactivity of the hydrated hematite (0 0 0 1) surface

The structure of the hydroxylated hematite (0 0 0 1) surface was investigated using crystal truncation rod diffraction and density functional theory. The combined experimental and theoretical results suggest that the surface is dominated by two hydroxyl moieties—hydroxyls that are singly coordinated and doubly coordinated with Fe. The results are consistent with the formation of distinct domains of these surface species; one corresponding to the hydroxylation of the surface Fe-cation predicted to be most stable under UHV conditions, and the second a complete removal of this surface Fe species leaving the hydroxylated oxygen layer. Furthermore, our results indicate that the hydroxylated hematite surface structures are significantly more stable than their dehydroxylated counterparts at high water partial pressures, and this transition in stability occurs at water pressures orders of magnitude below the same transition for α-alumina. These results explain the observed differences in reactivity of hematite and alumina (0 0 0 1) surfaces with respect to water and binding of aqueous metal cations.     

Sulfur poisoning of the CO adsorption on Co(0 0 0 1)

CO adsorption on a sulfur covered cobalt surface at 185 K has been studied using XPS, TDS, LEED, and WF measurements. As in the case of CO adsorption on the clean Co(0 0 0 1) surface, CO adsorbs and desorbs molecularly and no dissociation was observed. The saturation coverage of CO decreases linearly from 0.54 ML to 0.27 ML when the S pre-coverage increases to 0.25 ML. The WF increased during CO adsorption, but did not reach the value obtained for CO adsorption on the clean surface. The smaller work function change is explained by the reduced adsorption of CO on the sulfur-precovered surface. A reduction in the activation energy of desorption for CO from 113 kJ/mol to 88 kJ/mol was observed indicating weaker bonding of the CO molecules to the surface. The behavior of the CO/S/Co(0 0 0 1) system was explained by a combination of steric and electronic effects.     

Dependence of the microstructural properties on the substrate temperature in strained CdTe (1 0 0)/GaAs (1 0 0) heterostructures

CdTe thin films were grown on GaAs (1 0 0) substrates by using molecular beam epitaxy at various temperatures. The bright-field transmission electron microscopy (TEM) images and the high-resolution TEM (HRTEM) images showed that the crystallinity of CdTe epilayers grown on GaAs substrates was improved by increasing the substrate temperature. The result of selected-area electron diffraction pattern (SADP) showed that the orientation of the grown CdTe thin films was the (1 0 0) orientation. The lattice constant the strain, and the stress of the CdTe thin film grown on the GaAs substrate were determined from the SADP result. Based on the SADP and HRTEM results, a possible atomic arrangement for the CdTe/GaAs heterostructure is presented.     

Theoretical study of Ni adsorption on the GaN(0 0 0 1) surface

First-principles pseudo-potential calculations within density-functional theory framework are performed in order to study the structural and electronic properties of nickel adsorption and diffusion on a GaN(0 0 0 1)-2×2 surface. The adsorption energies and potential energy surfaces are investigated for a Ni adatom on the Ga-terminated (0 0 0 1) surface of GaN. This surface is also used to study the effect of the nickel surface coverage. The results show that the most stable positions of a Ni adatom on GaN(0 0 0 1) are at the H₃ sites and T₄ sites, for low and high Ni coverage respectively. In addition, confirming previous experimental results, we have found that the growth of Ni monolayers on the GaN(0 0 0 1) surface is possible.     

Theoretical study of hydrogen adsorption on the GaN(0 0 0 1) surface

Ab initio density functional theory, using the B3LYP hybrid functional with all-electron basis sets, has been applied to the adsorption of H on the (0 0 0 1) surface of wurtzite GaN. For bulk GaN, good agreement is obtained with photoemission and X-ray emission data for the valence band and for the Ga 3d and N 2s shallow core levels. A band gap of E_g = 4.14 eV is computed vs the experimental value (at 0 K) of 3.50 eV. A simple model, consisting of a (2 × 2) structure with 3/4-monolayer (ML) of adsorbed H, is found to yield a density of states in poor agreement with photoemission data for H adsorbed on surfaces prepared by ion bombardment and annealing. A new model, consisting of co-adsorbed Ga (1/4 ML) and H (1/2 ML), is proposed to account for these data.     

Behavior of the (0 0 0 1) surface of sapphire upon high-temperature annealing

Evolution of the (0 0 0 1) α-Al₂O₃ surface morphology upon annealing was studied using atomic force microscopy. The annealing protocol included temperatures of 1200 and 1500 °C and different time. Vicinal Al₂O₃ (0 0 0 1) surfaces annealed at 1200 °C exhibit initial localized step coalescence that evolves into terrace-and-step with island morphology that persists for several hours. Annealing at 1500 °C results in initial step coalescence on a global scale, and yields a terrace-and-step morphology with an indication of step bunching after longer annealing times.     

Lattice-resolution imaging of the sapphire (0 0 0 1) surface in air by AFM

Lattice-resolution images of single-crystal α-alumina (sapphire) (0 0 0 1) surfaces have been obtained using contact-mode AFM under ambient conditions. It was found that the hexagonal surface lattice has a periodicity of 0.47 ± 0.11 nm, which is identical to that reported previously when the same surface was imaged in water. Large lattice corrugations (as high as 1 nm) were observed, but were concluded to be imaging artifacts because of the strong friction which causes additional deflection of the cantilever. The additional deflection of the cantilever is registered by the detector of the optical beam-deflection AFM resulting in an overestimation of the height at each lattice point. Abrupt changes were also resolved in the topography including honeycomb patterns and a transition from 2D lattices to 1D parallel stripes, with scanning direction. These phenomena can be explained by the commensurate sliding between the tip and sapphire surface due to the strong contact force.     

Structure of the oxidized 4H-SiC(0 0 0 1)-3 × 3 surface

We have determined the structure of the 4H-SiC(0 0 0 1)-3 × 3 surface after exposure to small amounts of molecular oxygen at room temperature using surface X-ray diffraction. The 3 × 3 reconstruction remains until at least an exposure of 10,000 L, but the diffracted intensities change, indicating structural changes. Comparison of the Patterson maps of the clean and oxidized surface shows that the main changes occur at the Si tetramer on top of the 3 × 3 surface. Atomic positions for several models were fitted to the experimental data. A model in which oxygen atoms are inserted into the Si tetramer gives the best fit to the experimental data. The best-fit atomic positions agree well with those obtained using density functional calculations.     

Robust half-metallicity at the zincblende CrTe(0 0 1) surfaces and its interface with ZnTe(0 0 1)

All electron full potential calculations based on spin density functional theory are performed to study cubic zincblende (ZB) and hexagonal NiAs structures of bulk CrTe, free (0 0 1) surfaces of ZB CrTe, and interface of ZB CrTe with ZnTe(0 0 1). The ferromagnetic NiAs structure is reported to be about 0.26 eV more stable than the ferromagnetic ZB phase while ZB CrTe is found to be a half-metallic ferromagnet with a half-metallic gap of about 2.90 eV. Thermodynamic stability of CrTe(0 0 1) surfaces are studied in the framework of ab-initio thermodynamic. The obtained phase diagram evidences more stability of the Te terminated surface compared with the Cr termination. We discuss that both Te and Cr ideal terminations of CrTe(0 0 1) retain bulk-like half-metallic property but with a reduced half-metallic gap compared with bulk value. The structural, electronic, magnetic, and band alignment properties of the ZB CrTe/ZnTe(0 0 1) interface are computed and a rather large minority valence band offset of about 1.09 eV is observed in this heterojunction.     

Measurement of the Lambda0b lifetime in the decay lambda0b--> J/psiLambda0 with the D0 detector

We present measurements of the Lambda(0)(b) lifetime in the exclusive decay channel Lambda(0)(b)--> J/psiLambda(0), with J/psi--> mu(+)mu(-) and Lambda(0)--> ppi(-), the B0 lifetime in the decay B0-->J/psiK(0)(S) with J/psi--> mu(+)mu(-) and K(0)(S)-->pi(+)pi(-), and the ratio of these lifetimes. The analysis is based on approximately 250 pb(-1) of data recorded with the D0 detector in pp collisions at sqrt[s] = 1.96 TeV. The Lambda(0)(b) lifetime is determined to be tau(Lambda(0)(b)) = 1.22(+0.22)(-0.18)(stat) +/- 0.04(syst) ps, the B0 lifetime tau(B0) = 1.40(+0.11)(-0.10)(stat) +/- 0.03(syst) ps, and the ratio tau(Lambda(0)(b))/tau(B0) = 0.87(+0.17)(-0.14)(stat) +/- 0.03(syst). In contrast with previous measurements using semileptonic decays, this is the first determination of the Lambda(0)(b) lifetime based on a fully reconstructed decay channel.     

Interference study of the chi c0(13P0) in the reaction -pp-->pi0pi0

Fermilab experiment E835 has observed (-)pp annihilation production of the charmonium state chi(c0) and its subsequent decay into pi(0)pi(0). Although the resonant amplitude is an order of magnitude smaller than that of the nonresonant continuum production of pi(0)pi(0), an enhanced interference signal is evident. A partial wave expansion is used to extract physics parameters. The amplitudes J=0 and 2, of comparable strength, dominate the expansion. Both are accessed by L=1 in the entrance (-)pp channel. The product of the input and output branching fractions is determined to be B((-)pp-->chi(c0))xB(chi(c0)-->pi(0)pi(0))=(5.09+/-0.81+/-0.25)x10(-7).     

Rotational levels of the (0 0 0) and (0 1 0) states of D2O from hot emission spectra in the 320-860 cm region

The far-infrared emission spectra of deuterated water vapour were measured at different temperatures (1370, 1520, and 1950 K) in the range 320-860 cm⁻¹ at a resolution of 0.0055 cm⁻¹. The measurements were performed in an alumina cell with an effective length of hot gas of about 50 cm. More than 1150 new measured lines for the D₂¹⁶O molecule corresponding to transitions between highly excited rotational levels of the (0 0 0) and (0 1 0) vibrational states are reported. These new lines correspond to rotational states with higher values of the rotational quantum numbers compared to previously published determinations: J_max=26 and for the (0 0 0) ← (0 0 0) band, J_max=25 and for the (0 1 0) ← (0 1 0) band, and J_max=26 and for the (0 1 0) ← (0 0 0) band. The estimated accuracy of the measured line positions is 0.0005 cm⁻¹. To our knowledge no experimentally measured rotational transitions for D₂¹⁶O within an excited vibrational state have been available in the literature so far. An extended set of experimental rotational energy levels for (0 0 0) and (0 1 0) vibration states including all previously available data has been determined. For the data reduction we used the generating function model. The root mean square (RMS) deviation between observed and calculated values is 0.0012 cm⁻¹ for 692 rotational levels of the (0 0 0) state and 0.0010 cm⁻¹ for 639 rotational levels of the (0 1 0) vibrational state. A comparison of the observed energy levels with the best available values from the literature and with the global predictions from molecular electronic potential energy surface [J. Chem. Phys. 106 (1997) 4618] for the (0 0 0) and (0 1 0) states is discussed.     

Adsorption of Al on the Si(0 0 1) surface

The first-principles calculations have been presented to study the adsorption of aluminum (Al) on the Si(0 0 1)(2×1) surface. We have investigated the optimized geometries and electronic structures of the adatom-substrate system. The adsorption energy of the system has been calculated. The most stable adsorption sites were consequently determined to be HH site and T3+T4. It is shown that the Si-Si dimer is asymmetric on the reconstructed bare surface and become symmetric upon Al adsorption. In addition, the bond length of Si-Si was found to be considerably elongated in the adsorption system. It is found that the work function change obtained in our work is different from other previous results on the adsorption of alkali metals on the Si(0 0 1) surface. In order to investigate the relative stability of phases at different coverages, the surface formation energy of the adsorption system was calculated. To shed light on the nature of the Al-Si bond and the character of silicon surface, the density of states (DOS) and difference charge density of the system were evaluated.     

Defect-induced dimer pinning on the Si(0 0 1) surface

Room-temperature STM images frequently show regions of antisymmetric dimer ordering surrounding certain types of defect on the Si(0 0 1) surface. While it has been generally believed that any defect asymmetric with respect to the dimer row would induce this dimer pinning effect, recent experimental results have shown that this is not the case. We present a model, based on a nearest-neighbour Ising treatment of the surface, which allows the extent of pinning caused by a dimer to be predicted from ab initio calculations. We use this model to predict the pinning extent for three phosphorus-containing structures important in a proposed silicon-based quantum computer fabrication scheme, and identify one of these asymmetric features as causing no appreciable pinning. In addition, we use ab initio calculations to identify the effects governing the interaction between neighbouring dimers.