Time-resolved gas-phase kinetic and quantum chemical studies of reactions of silylene with chlorine-containing species. 2. CH3Cl

Time-resolved kinetic studies of the reaction of silylene, SiH2, generated by laser flash photolysis of both silacyclopent-3-ene and phenylsilane, have been carried out to obtain second-order rate constants for its reaction with CH3Cl. The reaction was studied in the gas phase at six temperatures in the range 294-606 K. The second-order rate constants gave a curved Arrhenius plot with a minimum value at T approximately 370 K. The reaction showed no pressure dependence in the presence of up to 100 Torr SF6. The rate constants, however, showed a weak dependence on laser pulse energy. This suggests an interpretation requiring more than one contributing reaction pathway to SiH2 removal. Apart from a direct reaction of SiH2 with CH3Cl, reaction of SiH2 with CH3 (formed by photodissociation of CH3Cl) seems probable, with contributions of up to 30% to the rates. Ab initio calculations (G3 level) show that the initial step of reaction of SiH2 with CH3Cl is formation of a zwitterionic complex (ylid), but a high-energy barrier rules out the subsequent insertion step. On the other hand, the Cl-abstraction reaction leading to CH3 + ClSiH2 has a low barrier, and therefore, this seems the most likely candidate for the main reaction pathway of SiH2 with CH3Cl. RRKM calculations on the abstraction pathway show that this process alone cannot account for the observed temperature dependence of the rate constants. The data are discussed in light of studies of other silylene reactions with haloalkanes.     

The addition reaction between silylene and ethyne: further isotope studies, pressure dependence studies, and quantum chemical calculations

Time-resolved kinetic studies of the reaction of dideutero-silylene, SiD 2, generated by laser flash photolysis of phenylsilane-d 3, have been carried out to obtain rate constants for its bimolecular reaction with C 2H 2. The reaction was studied in the gas phase over the pressure range 1-100 Torr in SF 6 bath gas, at five temperatures in the range 297-600 K. The second-order rate constants obtained by extrapolation to the high-pressure limits at each temperature fitted the Arrhenius equation log( k (infinity)/cm (3) molecule (-1) s (-1)) = (-10.05 +/- 0.05) + (3.43 +/- 0.36 kJ mol (-1))/ RT ln 10. The rate constants were used to obtain a comprehensive set of isotope effects by comparison with earlier obtained rate constants for the reactions of SiH 2 with C 2H 2 and C 2D 2. Additionally, pressure-dependent rate constants for the reaction of SiH 2 with C 2H 2 in the presence of He (1-100 Torr) were obtained at 300, 399, and 613 K. Quantum chemical (ab initio) calculations of the SiC 2H 4 reaction system at the G3 level support the initial formation of silirene, which rapidly isomerizes to ethynylsilane as the major pathway. Reversible formation of vinylsilylene is also an important process. The calculations also indicate the involvement of several other intermediates, not previously suggested in the mechanism. RRKM calculations are in semiquantitative agreement with the pressure dependences and isotope effects suggested by the ab initio calculations, but residual discrepancies suggest the possible involvement of the minor reaction channel, SiH 2 + C 2H 2 --> Si( (3)P 1) + C 2H 4. The results are compared and contrasted with previous studies of this reaction system.     

Time-resolved gas-phase kinetic and quantum chemical studies of the reaction of silylene with oxygen

Time-resolved kinetic studies of the reaction of silylene, SiH2, generated by laser flash photolysis of phenylsilane, have been carried out to obtain rate constants for its bimolecular reaction with O(2). The reaction was studied in the gas phase over the pressure range 1-100 Torr in SF(6) bath gas, at five temperatures in the range 297-600 K. The second order rate constants at 10 Torr were fitted to the Arrhenius equation: [see text] The decrease in rate constant values with increasing temperature, although systematic is very small. The rate constants showed slight increases in value with pressure at each temperature, but this was scarcely beyond experimental uncertainty. From estimates of Lennard-Jones collision rates, this reaction is occurring at ca. 1 in 20 collisions, almost independent of pressure and temperature. Ab initio calculations at the G3 level backed further by multi-configurational (MC) SCF calculations, augmented by second order perturbation theory (MRMP2), support a mechanism in which the initial adduct, H(2)SiOO, formed in the triplet state (T), undergoes intersystem crossing to the more stable singlet state (S) prior to further low energy isomerisation processes leading, via a sequence of steps, ultimately to dissociation products of which the lowest energy pair are H2O+SiO. The decomposition of the intermediate cyclo-siladioxirane, via O-O bond fission, plays an important role in the overall process. The bottleneck for the overall process appears to be the T-->S process in H2SiOO. This process has a small spin-orbit coupling matrix element, consistent with an estimate of its rate constant of 1x10(9) s-1 obtained with the aid of RRKM theory. This interpretation preserves the idea that, as in its reactions in general, SiH2 initially reacts at the encounter rate with O2. The low values for the secondary reaction barriers on the potential energy surface account for the lack of an observed pressure dependence. Some comparisons are drawn with the reactions of CH2+O2 and SiCl2+O2.     

Direct time-resolved study of the gas-phase reactions of germylene with ethyl- and diethylgermane: absolute rate constants, temperature dependences, and mechanism

Time-resolved studies of germylene, GeH2, generated by the 193 nm laser flash photolysis of 3,4-dimethyl-1-germacyclopent-3-ene, have been carried out to obtain rate constants for its bimolecular reactions with ethyl- and diethylgermanes in the gas phase. The reactions were studied over the pressure range 1-100 Torr with SF6 as bath gas and at five temperatures in the range 297-564 K. Only slight pressure dependences were found for GeH2 + EtGeH3 (399, 486, and 564 K). The high pressure rate constants gave the following Arrhenius parameters: for GeH2 + EtGeH3, log A = -10.75 +/- 0.08 and Ea = -6.7 +/- 0.6 kJ mol-1; for GeH2 + Et2GeH2, log A = -10.68 +/- 0.11 and Ea = -6.95 +/- 0.80 kJ mol-1. These are consistent with fast, near collision-controlled, association processes at 298 K. RRKM modeling calculations are, for the most part, consistent with the observed pressure dependence of GeH2 + EtGeH3. The ethyl substituent effects have been extracted from these results and are much larger than the analogous methyl substituent effects in the SiH2 + methylsilane reaction series. This is consistent with a mechanistic model for Ge-H insertion in which the intermediate complex has a sizable secondary barrier to rearrangement.     

Surprisingly slow reaction of dimethylsilylene with dimethylgermane: time-resolved kinetic studies and related quantum chemical calculations

Time-resolved studies of silylene, SiH2, and dimethylsilylene, SiMe2, generated by the 193 nm laser flash photolysis of appropriate precursor molecules have been carried out to obtain rate constants for their bimolecular reactions with dimethylgermane, Me2GeH2, in the gas phase. SiMe2 + Me2GeH2 was studied at five temperatures in the range 299-555 K. Problems of substrate UV absorption at 193 nm at temperatures above 400 K meant that only three temperatures could be used reliably for rate constant measurement. These rate constants gave the Arrhenius parameters log(A/cm3 molecule(-1) s(-1)) = -13.25 +/- 0.16 and E(a) = -(5.01 +/- 1.01) kJ mol(-1). Only room temperature studies of SiH2 were carried out. These gave values of (4.05 +/- 0.06) x 10(-10) cm3 molecule(-1) s(-1) (SiH2 + Me2GeH2 at 295 K) and also (4.41 +/- 0.07) x 10(-10) cm3 molecule(-1) s(-1) (SiH2 + MeGeH3 at 296 K). Rate constant comparisons show the surprising result that SiMe2 reacts 12.5 times slower with Me2GeH2 than with Me2SiH2. Quantum chemical calculations (G2(MP2,SVP)//B3LYP level) of the model Si-H and Ge-H insertion processes of SiMe2 with SiH4/MeSiH3 and GeH4/MeGeH3 support these findings and show that the lower reactivity of SiMe2 with Ge-H bonds is caused by a higher secondary barrier for rearrangement of the initially formed complexes. Full details of the structures of intermediate complexes and the discussion of their stabilities are given in the paper. Other, related, comparisons of silylene reactivity are also presented.     

Time-resolved gas-phase kinetic, quantum chemical, and RRKM studies of reactions of silylene with alcohols

Time-resolved kinetic studies of silylene, SiH(2), generated by laser flash photolysis of 1-silacyclopent-3-ene and phenylsilane, have been carried out to obtain rate constants for its bimolecular reactions with methanol, ethanol, 1-propanol, 1-butanol, and 2-methyl-1-butanol. The reactions were studied in the gas phase over the pressure range 1-100 Torr in SF(6) bath gas, at room temperature. In the study with methanol several buffer gases were used. All five reactions showed pressure dependences characteristic of third body assisted association reactions. The rate constant pressure dependences were modeled using RRKM theory, based on E(0) values of the association complexes obtained by ab initio calculation (G3 level). Transition state models were adjusted to fit experimental fall-off curves and extrapolated to obtain k(∞) values in the range (1.9-4.5) × 10(-10) cm(3) molecule(-1) s(-1). These numbers, corresponding to the true bimolecular rate constants, indicate efficiencies of between 16% and 67% of the collision rates for these reactions. In the reaction of SiH(2) + MeOH there is a small kinetic component to the rate which is second order in MeOH (at low total pressures). This suggests an additional catalyzed reaction pathway, which is supported by the ab initio calculations. These calculations have been used to define specific MeOH-for-H(2)O substitution effects on this catalytic pathway. Where possible our experimental and theoretical results are compared with those of previous studies.     

C60与硅烯环加成反应机理的理论研究

用半经验AM1法研究了C₆₀与单态硅烯环加成反应机理.经Berny梯度法优化得到反应的过渡态,并进行了振动分析确认.计算结果表明:硅烯在C₆₀的66键上的加成反应分两步,第一步反应物生成中间配合物,无势垒;第二步由中间配合物经过渡态变为产物.65键上的加成反应分三步,第一步由反应物生成中间配合物,第二步由中间配合物经过渡态I得到闭环结构的中间体,第三步由中间体经过渡态Ⅱ形成产物.66键加成反应的活化势垒较低,从反应机理和动力学角度解释了66键加成优于65键加成的原因.     

Gas phase kinetic and quantum chemical studies of the reactions of silylene with the methylsilanes. Absolute rate constants, temperature dependences, RRKM modelling and potential energy surfaces

Time resolved studies of silylene, SiH2, generated by the 193 nm laser flash photolysis of phenylsilane, have been carried out to obtain rate coefficients for its bimolecular reactions with methyl-, dimethyl- and trimethyl-silanes in the gas phase. The reactions were studied over the pressure range 3-100 Torr with SF6 as bath gas and at five temperatures in the range 300-625 K. Only slight pressure dependences were found for SiH2+MeSiH3(485 and 602 K) and for SiH2+Me2SiH2(600 K). The high pressure rate constants gave the following Arrhenius parameters: [TABLE: SEE TEXT]. These are consistent with fast, near to collision-controlled, association processes. RRKM modelling calculations are consistent with the observed pressure dependences (and also the lack of them for SiH2+Me3SiH). Ab initio calculations at both second order perturbation theory (MP2) and coupled cluster (CCSD(T)) levels, showed the presence of weakly-bound complexes along the reaction pathways. In the case of SiH2+MeSiH3 two complexes, with different geometries, were obtained consistent with earlier studies of SiH2+SiH4. These complexes were stabilised by methyl substitution in the substrate silane, but all had exceedingly low barriers to rearrangement to product disilanes. Although methyl groups in the substrate silane enhance the intrinsic SiH2 insertion rates, it is doubtful whether the intermediate complexes have a significant effect on the kinetics. A further calculation on the reaction MeSiH+SiH4 shows that the methyl substitution in the silylene should have a much more significant kinetic effect (as observed in other studies).     

Experimental and theoretical evidence for homogeneous catalysis in the gas-phase reaction of SiH(2) with H(2)O (and D(2)O): a combined kinetic and quantum chemical study

Time-resolved kinetic studies of the reaction of silylene, SiH(2), with H(2)O and with D(2)O have been carried out in the gas phase at 297 K and at 345 K, using laser flash photolysis to generate and monitor SiH(2). The reaction was studied independently as a function of H(2)O (or D(2)O) and SF(6) (bath gas) pressures. At a fixed pressure of SF(6) (5 Torr), [SiH(2)] decay constants, k(obs), showed a quadratic dependence on [H(2)O] or [D(2)O]. At a fixed pressure of H(2)O or D(2)O, k(obs) values were strongly dependent on [SF(6)]. The combined rate expression is consistent with a mechanism involving the reversible formation of a vibrationally excited zwitterionic donor-acceptor complex, H(2)Si...OH(2) (or H(2)Si...OD(2)). This complex can then either be stabilized by SF(6) or it reacts with a further molecule of H(2)O (or D(2)O) in the rate-determining step. Isotope effects are in the range 1.0-1.5 and are broadly consistent with this mechanism. The mechanism is further supported by RRKM theory, which shows the association reaction to be close to its third-order region of pressure (SF(6)) dependence. Ab initio quantum calculations, carried out at the G3 level, support the existence of a hydrated zwitterion H(2)Si...(OH(2))(2), which can rearrange to hydrated silanol, with an energy barrier below the reaction energy threshold. This is the first example of a gas-phase-catalyzed silylene reaction.     

The reaction between silylene and ammonia: Some gas-phase kinetic and quantum chemical studies

Time-resolved kinetic studies of the reaction of silylene, SiH₂, generated by 193 nm laser flash photolysis of silacyclopent-3-ene, have been carried out in the presence of ammonia, NH₃. Second order kinetics were observed. The reaction was studied in the gas phase at 10 Torr total pressure in SF₆ bath gas at each of the three temperatures, 299, 340 and 400 K. The second order rate constants (laser pulse energy of 60 mJ +) fitted the Arrhenius equation:noindent Experiments at other pressures showed that these rate constants were unaffected by pressure in the range 10–100 Torr, but showed small decreases in value at 3 and 1 Torr. There was also a weak intensity dependence, with rate constants decreasing at laser pulse energies of 30 mJ +. Ab initio calculations at the G3 level of theory, show that SiH₂+NH₃ should form an initial adduct (donor-acceptor complex), but that energy barriers are too great for further reaction of the adduct. This implies that SiH₂+NH₃ should be a pressure dependent association reaction. The experimental data are inconsistent with this and we conclude that SiH₂ decays are better explained by reaction of SiH₂ with the amino radical, NH₂, formed by photodissociation of NH₃ at 193 nm. The mechanism of this previously unstudied reaction is discussed.     

HNO3 forming channel of the HO2 + NO reaction as a function of pressure and temperature in the ranges of 72-600 Torr and 223-323 K

A high-pressure turbulent flow reactor coupled with a chemical ionization mass-spectrometer was used to determine the branching ratio of the HO(2) + NO reaction: HO(2) + NO --> OH + NO(2) (1a), HO(2) + NO --> HNO(3) (1b). The branching ratio, beta = k(1b)/k(1a), was derived from the measurements of "chemically amplified" concentrations of the NO(2) and HNO(3) products in the presence of O(2) and CO. The pressure and temperature dependence of beta was determined in the pressure range of 72-600 Torr of N(2) carrier gas between 323 and 223 K. At each pressure, the branching ratio was found to increase with the decrease of temperature, the increase becoming less pronounced with the increase of pressure. In the 298-223 K range, the data could be fitted by the expression: beta(T,P) = (530 +/- 10)/T(K) + (6.4 +/- 1.3) x 10(-4)P(Torr) - (1.73 +/- 0.07), giving beta approximately 0.5% near the Earth's surface (298 K, 760 Torr) and 0.8% in the tropopause region (220 K, 200 Torr). The atmospheric implication of these results is briefly discussed.     

Time-resolved,Gas-phase Kinetic and Quantum Chemical Studies of the Reaction of Germylene with Hydrogen Chloride

Time-resolved studies of germylene, GeH₂, generated by laser flash photolysis of 3,4-dimethyl-1-germacyclopent-3-ene at 193 nm and monitored by laser absorption, have been carried out to obtain rate constants for its bimolecular reaction with HCl. The reaction was studied in the gas phase, mainly at a total pressure of 10 Torr (in SF₆ bath gas) at five temperatures in the range 295–558 K. Experiments at other pressures showed that these rate constants were unaffected by pressure. The second-order rate constants at 10 Torr (SF₆ bath gas) fitted the Arrhenius equation: log(k/cm³ molecule⁻¹ s⁻¹)=(−12.06±0.14)+(2.58±1.03 kJ mol⁻¹)/RTln10 where the uncertainties are single standard deviations. Quantum chemical calculations at G4 level support a mechanism in which an initial weakly bound donor-acceptor complex is formed. This can then rearrange and decompose to give H₂ and HGeCl (chlorogermylene). The enthalpy barrier (36 kJ mol⁻¹) is too high to allow rearrangement of the complex to GeH₃Cl (chlorogermane).     

Kinetics of the O + ICN reaction

The kinetics of the O + ICN reaction was studied using a relative rate method, with O + C(2)H(2) as the competing reaction. Carbon monoxide products formed in the competing reaction and subsequent secondary chemistry were detected as a function of reagent ICN pressure to obtain total rate constants for the O + ICN reaction. Analysis of the experimental data yields rate constants of k(1) = (3.7 ± 1.0 to 26.2 ± 4.0) × 10(-14) cm(3) molecule(-1) s(-1) over the total pressure range 1.5-9.5 Torr. Product channel NCO + I, the only bimolecular exothermic channel of the reaction, was investigated by detection of N(2)O in the presence of NO and found to be insignificant. An ab initio calculation of the potential energy surface (PES) of the reaction at the CCSD(T)/CEP-31G//DFT-B3LYP/CEP-31G level of theory was also performed. The pathways leading to bimolecular product channels are kinetically unfavorable. Formation and subsequent stabilization of an ICNO adduct species appears to dominate the reaction, in agreement with the experimentally observed pressure dependent rate constants.     

Infrared chemiluminescence study of CO2 formation in CO + NO reaction on Pd(110) and Pd(111) surfaces

Infrared (IR) chemiluminescence studies of CO2 formed during steady-state CO + NO reaction over Pd(110) and Pd(111) surfaces were carried out. Kinetics of the CO + NO reaction were studied over Pd(110) using a molecular-beam reaction system in the pressure range of 10-2-10-1 Torr. The activity of the CO + NO reaction on Pd(110) was much higher than that of Pd(111), which was quite different from the result of other experiments under a higher pressure range. On the basis of the experimental data on the dependence of the reaction rate on CO and NO pressures and the reaction rate constants obtained by using a reaction model, the coverage of NO, CO, N, and O was calculated under various flux conditions. From the analysis of IR emission spectra in the CO + O2 reaction on Pd(110) and Pd(111), the antisymmetric vibrational temperature (TVAS) was seen to be higher than the bending vibrational temperature (TVB) on Pd(110). In contrast, TVB was higher than TVAS on Pd(111). These behaviors suggest that the activated complex for CO2 formation is more bent on Pd(111) than that on Pd(110), which is reflected by the surface structure. Both TVB and TVAS for the CO + O2 reaction on Pd(110) and Pd(111) increased gradually with increasing surface temperature (TS). On the other hand, in the case of the CO + NO reaction on Pd(110) and Pd(111), TVAS decreased and TVB increased significantly with increasing TS. TVB was lower than TVAS at lower TS, while TVB was higher than TVAS at higher TS. Comparison of the data obtained for the two reactions indicates that TVB in the CO + NO reaction on Pd(110) at TS = 800 and 850 K is much higher than that in the CO + O2 reaction on Pd(110).     

Unusual isotope effect in the reaction of chlorosilylene with trimethylsilane-1-d. Absolute rate studies and quantum chemical and Rice-Ramsperger-Kassel-Marcus calculations provide strong evidence for the involvement of an intermediate complex

Time-resolved studies of chlorosilylene, ClSiH, generated by the 193 nm laser flash photolysis of 1-chloro-1-silacyclopent-3-ene, have been carried out to obtain rate constants for its bimolecular reaction with trimethylsilane-1-d, Me(3)SiD, in the gas phase. The reaction was studied at total pressures up to 100 Torr (with and without added SF(6)) over the temperature range of 295-407 K. The rate constants were found to be pressure independent and gave the following Arrhenius equation: log[(k/(cm(3) molecule(-1) s(-1))] = (-13.22 ± 0.15) + [(13.20 ± 1.00) kJ mol(-1)]/(RT ln 10). When compared with previously published kinetic data for the reaction of ClSiH with Me(3)SiH, kinetic isotope effects, k(D)/k(H), in the range from 7.4 (297 K) to 6.4 (407 K) were obtained. These far exceed values of 0.4-0.5 estimated for a single-step insertion process. Quantum chemical calculations (G3MP2B3 level) confirm not only the involvement of an intermediate complex, but also the existence of a low-energy internal isomerization pathway which can scramble the D and H atom labels. By means of Rice-Ramsperger-Kassel-Marcus modeling and a necessary (but small) refinement of the energy surface, we have shown that this mechanism can reproduce closely the experimental isotope effects. These findings provide the first experimental evidence for the isomerization pathway and thereby offer the most concrete evidence to date for the existence of intermediate complexes in the insertion reactions of silylenes.     

Ab initio chemical kinetics for the ClOO + NO reaction: effects of temperature and pressure on product branching formation

The kinetics and mechanism for the reaction of ClOO with NO have been investigated by ab initio molecular orbital theory calculations based on the CCSD(T)/6-311+G(3df)//PW91PW91∕6-311+G(3df) method, employed to evaluate the energetics for the construction of potential energy surfaces and prediction of reaction rate constants. The results show that the reaction can produce two key low energy products ClNO + (3)O(2) via the direct triplet abstraction path and ClO + NO(2) via the association and decomposition mechanism through long-lived singlet pc-ClOONO and ClONO(2) intermediates. The yield of ClNO + O(2) ((1)△) from any of the singlet intermediates was found to be negligible because of their high barriers and tight transition states. As both key reactions initially occur barrierlessly, their rate constants were evaluated with a canonical variational approach in our transition state theory and Rice-Ramspergen-Kassel-Marcus/master equation calculations. The rate constants for ClNO + (3)O(2) and ClO + NO(2) production from ClOO + NO can be given by 2.66 × 10(-16) T(1.91) exp(341/T) (200-700 K) and 1.48 × 10(-24) T(3.99) exp(1711/T) (200-600 K), respectively, independent of pressure below atmospheric pressure. The predicted total rate constant and the yields of ClNO and NO(2) in the temperature range of 200-700 K at 10-760 Torr pressure are in close agreement with available experimental results.     

Thermal decomposition mechanism of disilane

Thermal decomposition of disilane was investigated using time-of-flight (TOF) mass spectrometry coupled with vacuum ultraviolet single-photon ionization (VUV-SPI) at a temperature range of 675-740 K and total pressure of 20-40 Torr. Si(n)H(m) species were photoionized by VUV radiation at 10.5 eV (118 nm). Concentrations of disilane and trisilane during thermal decomposition of disilane were quantitatively measured using the VUV-SPI method. Formation of Si(2)H(4) species was also examined. On the basis of pressure-dependent rate constants of disilane dissociation reported by Matsumoto et al. [J. Phys. Chem. A 2005, 109, 4911], kinetic simulation including gas-phase and surface reactions was performed to analyze thermal decomposition mechanisms of disilane. The branching ratio for (R1) Si(2)H(6) --> SiH(4) + SiH(2)/(R2) Si(2)H(6) --> H(2) + H(3)SiSiH was derived by the pressure-dependent rate constants. Temperature and reaction time dependences of disilane loss and formation of trisilane were well represented by the kinetic simulation. Comparison between the experimental results and the kinetic simulation results suggested that about 70% of consumed disilane was converted to trisilane, which was observed as one of the main reaction products under the present experimental conditions.     

Kinetics and mechanism of the NCN + NO2 reaction studied by experiment and theory

The rate constant for the NCN + NO 2 reaction has been measured by a laser photolysis/laser-induced fluorescence technique in the temperature range of 260-296 K at pressures between 100 and 500 Torr with He and N 2 as buffer gases. The NCN radical was produced from the photolysis of NCN 3 at 193 nm and monitored by laser-induced fluorescence with a dye laser at 329.01 nm. The rate constant was found to increase with pressure but decrease with temperature, indicating that the reaction occurs via a long-lived intermediate stabilized by collisions with buffer gas. The reaction mechanism and rate constant are also theoretically predicted for the temperature range of 200-2000 K and the He and N 2 pressure range of 10 (-4) Torr to 1000 atm based on dual-channel Rice-Ramsperger-Kassel-Marcus (RRKM) theory with the potential energy surface evaluated at the G2M//B3LYP/6-311+G(d) level. In the low-temperature range (<700 K), the most favorable reaction is the barrierless association channel that leads to the intermediate complex (NCN-NO 2). At high temperature, the direct O-abstraction reaction with a barrier of 9.8 kcal/mol becomes the dominant channel. The rate constant calculated by RRKM theory agrees reasonably well with experimental data.     

Reaction mechanism and kinetics of the NCN+NO reaction: comparison of theory and experiment

The rate constants for the NCN + NO reaction have been measured by laser photolysis/laser-induced fluorescence technique in the temperature range of 254-353 K in the presence of He (40-600 Torr) and N2 (30-528 Torr) buffer gases. The NCN radical was produced from the photodissociation of NCN3 at 193 nm and monitored with a dye laser at 329.01 nm. The reaction was found to be strongly positive-pressure dependent with negative-temperature dependence, as was reported previously. The experimental data could be reasonably accounted for by dual-channel Rice-Ramsperger-Kassel-Marcus calculations based on the predicted potential-energy surface using the modified Gaussian-2 method. The reaction is predicted to occur via weak intermediates, cis- and trans-NCNNO, in the 2A" state which crosses with the 2A' state containing more stable cis- and trans-NCNNO isomers. The high barriers for the fragmentation of these isomers and their trapping in the 2A' state by collisional stabilization give rise to the observed positive-pressure dependence and negative-temperature effect. The predicted energy barrier for the fragmentation of the cis-NCNNO (2A') to CN + N2O also allows us to quantitatively account for the rate constant previously measured for the reverse process CN + N2O --> NCN + NO.     

Experimental and theoretical studies of the kinetics of the reactions of OH and OD with 2-methyl-3-buten-2-ol between 300 and 415 K at low pressure

The rate constants for the reactions of OH and OD with 2-methyl-3-buten-2-ol (MBO) have been measured at 2, 3, and 5 Torr total pressure over the temperature range 300-415 K using a discharge-flow system coupled with laser induced fluorescence detection of OH. The measured rate constants at room temperature and 5 Torr for the OH + MBO reaction in the presence of O2 and the OD + MBO reaction are (6.32 +/- 0.27) and (6.61 +/- 0.66) x 10(-11) cm3 molecule(-1) s(-1), respectively, in agreement with previous measurements at higher pressures. However, the rate constants begin to show a pressure dependence at temperatures above 335 K. An Arrhenius expression of k0 = (2.5 +/- 7.4) x 10(-32) exp[(4150 +/- 1150)/T] cm6 molecule(-2) s(-1) was obtained for the low-pressure-limiting rate constant for the OH + MBO reaction in the presence of oxygen. Theoretical calculations of the energetics of the OH + MBO reaction suggest that the stability of the different HO-MBO adducts are similar, with predicted stabilization energies between 27.0 and 33.4 kcal mol(-1) relative to the reactants, with OH addition to the internal carbon predicted to be 1-4 kcal mol(-1) more stable than addition to the terminal carbon. These stabilization energies result in estimated termolecular rate constants for the OH + MBO reaction using simplified calculations based on RRKM theory that are in reasonable agreement with the experimental values.