硅基槽式微环谐振腔型偏振解复用器全矢量分析

提出一种紧凑型偏振解复用器, 其中两条常规硅基波导作为输入/输出信号通道, 居于其中的槽式微环谐振腔用于偏振态/波长选择组件. 采用全矢量频域有限差分法详细分析了硅基常规及槽波导的模式特性, 结果发现其横磁模的模场布及其有效折射率相似, 而其横电模相应的特性则差异明显, 结果输入横磁模能够在谐振工作波长下从下路端口输出, 而输入横电模与微环耦合可以忽略, 直接从直通端口输出, 从而实现两偏振态的高效分离. 采用全矢量时域有限差分法详细分析了该偏振解复用器的光波传输特性, 结果表明, 当微环半径为3.489 μm时, 在1.55 μm工作波长下, 横磁模与横电模的消光比与插入损耗分别为 ～ 26.12 (36.67) dB与 ～ 0.49 (0.09) dB. 另外, 论文详细讨论了器件关键结构参数的制作容差, 并给出了输入模场在器件中的传输演变情况.     

硅键合SOI平面光波导探索

本文分析了ＳＩＭＯＸ／ＳＯＩ和ＤＷＢ／ＳＯＩ结构的性能特点。尝试用ＤＷＢ／ＳＯＩ材料制备不同波导层厚度的平面光波导样品，并测试了１．１５μｍ和１．５２３μｍ激光的ＴＥ和ＴＭ模的传输损耗。１．５２３μｍ光的ＴＥ模的最小传输损耗已达０．２７ｄＢ／ｃｍ。说明ＤＷＢ／ＳＯＩ材料是一种有潜力的光波导材料。     

Plasmonic Metasurfaces Enabled Ultra‐Compact Broadband Waveguide TM‐Pass Polarizer

Silicon waveguide polarizers offer a simple yet robust approach to address the polarization‐dependent issue of silicon‐based optical components, and hence have found numerous applications in silicon photonics. However, the available silicon waveguide polarizers suffer from the issue of large device footprint, high insertion loss (IL), and/or fabrication complexities. Here, a silicon waveguide transverse magnetic (TM)‐pass polarizer is constructed by coating a silicon waveguide with an ultra‐thin plasmonic metasurface structure that is capable of guiding slow surface wave (SW) mode. The transverse electric (TE) waveguide mode can be converted into SW mode with the involvement of metasurfaces, and hence is intrinsically absorbed and forbidden to pass, while the TM waveguide mode can be well guided due to little influence. A typical metasurface polarizer with an ultra‐short length of 2.4 µm enables the IL of 28.16 dB for the TE mode, and that of 0.53 dB for the TM mode at 1550 nm. Multiple‐band TM‐pass polarizers can be obtained by cascading two or more different metasurface‐coated silicon waveguides along the propagation direction, and a dual‐band TM‐pass polarizer is demonstrated with the IL being of 19.21 and 29.09 dB for the TE mode at 1310 and 1550 nm, respectively.     

Influence of the structure parameters on the gain and noise figure in silicon parametric amplifiers based on SOI Rib waveguides

Gain and Noise figure (NF) characteristics in dual-pump parametric amplifier based on silicon on insulator (SOI) Rib waveguides are numerically investigated in the presence of nonlinear losses. The impact of structure parameters of the silicon optical parametric amplifiers (SOPAs) on the gain and the NF are also analyzed. The results show that both the height and the width of the silicon on insulator (SOI) can affect the gain and the NF of SOPAs. 354 nm bandwidth (3 dB) and 8.135 maximum gain can be achieved by tailoring the structure parameters of the SOI rib waveguides. Moreover, the dispersion and the effective mode area of SOI are also analyzed.     

硅基脊型波导器件过渡区损耗及偏振效应

在绝缘层上的硅材料上制作了四种具有不同输入输出结构的星形耦合器并进行了测试,对脊形波导与平板波导相互过渡时过渡区的损耗问题进行了研究和讨论,计算得到在所使用的材料参量下利用锥形结构可以得到1dB左右的最小损耗,这一损耗是由于脊型波导与平板波导间的模式失配造成的。以文献中的实验数据为出发点,分析了脊形波导的偏振问题,并通过对脊型波导器件层厚度、脊高、脊宽进行优化设计,得到了不同偏振模式的有效折射率差仅为10^-5量级的单模脊型波导结构,这样的偏振效应在器件设计中可以忽略。     

Low-loss germanium strip waveguides on silicon for the mid-infrared

Mid-infrared photonics in silicon needs low-loss integrated waveguides. While monocrystalline germanium waveguides on silicon have been proposed, experimental realization has not been reported. Here we demonstrate a germanium strip waveguide on a silicon substrate. It is designed for single mode transmission of light in transverse magnetic (TM) polarization generated from quantum cascade lasers at a wavelength of 5.8 μm. The propagation losses were measured with the Fabry-Perot resonance method. The lowest achieved propagation loss is 2.5 dB/cm, while the bending loss is measured to be 0.12 dB for a 90° bend with a radius of 115 μm.     

Enhanced third harmonic reflection and diffraction in Silicon on Insulator photonic waveguides

Enhanced third harmonic (TH) generation from Silicon-On-Insulator (SOI) planar waveguides as well as SOI photonic crystal (PhC) slabs is studied in different angular configurations, both in the visible and infrared energy ranges. In the SOI planar waveguide, the multilayer structure causes the optical properties such as TH reflection to be different from those of bulk silicon samples. This behavior is well reproduced by calculations of TH reflectance.Measurements of third-harmonic reflection and diffraction from one-dimensional PhC slabs etched in the SOI waveguide are also reported. The angular positions of TH peaks at various diffraction orders agree well with those calculated from a nonlinear grating equation. Both reflection and diffraction processes contribute to enhanced TH generation efficiency in the PhC slabs.TH reflectance measurements performed on PhC slabs in the near infrared show a resonant interaction between the incident beam and the photonic structure, dependent on the angle of incidence. This leads to a nonlinear conversion efficiency which is strongly enhanced with respect to that of the SOI waveguide, due to the excitation of strong local fields associated with the presence of photonic modes in the PhC slab.     

Grating couplers for thick SOI rib waveguides

The use of grating couplers in high index contrast waveguides like silicon on insulator (SOI) offers several advantages over other coupling approaches, including better alignment tolerances and allowing for wafer-scale testing. The grating couplers were developed for nanometric SOI waveguides (Si-wires), and recently also for micrometric rib waveguides. In this paper we review our work in fiber-to-chip grating couplers for thick SOI rib waveguides, where a coupling efficiency of ?2.2?dB was demonstrated experimentally. We also discuss the use of grating couplers to improve optical throughput (étendue) of a planar waveguide Fourier-Transform (FT) spectrometer implemented in thick rib waveguides.     

硅基混合表面等离子体纳米光波导及集成器件

总结并展望了硅基混合表面等离子体纳米光波导及集成器件方面的理论和实验研究工作。首先介绍了几种硅基混合表面等离子体纳米光波导结构,其尺寸可小至100 nm以下,而传播长度达100μm量级;其次介绍了基于硅基混合表面等离子体纳米光波导的功分器、偏振分束器和谐振器等集成器件,其尺寸为亚微米量级;最后探讨了硅基混合表面等离子体纳米光波导与硅纳米线光波导的耦合及对其进行增益补偿。     

SOI波长信号分离器的研制

根据大截面单模脊形波导理论和双模干涉机制，在硅片直接键合、背面抛光减薄的ＳＯＩ材料上，通过氢氧化钾各向异性腐蚀的方法，成功地研制出ＳＯＩ波长信号分离器，在波长为１．３μｍ，其插入损耗为４．８１ｄＢ，串音小于－１８．６ｄＢ。     

Magneto-optical nonreciprocal phase shift in garnet/silicon-on-insulator waveguides

We demonstrate the integration of a single-crystal magneto-optical film onto thin silicon-on-insulator (SOI) waveguides by use of direct wafer bonding. Simulations show that the high confinement and asymmetric structure of SOI allows an enhancement of approximately 3x over the nonreciprocal phase shift achieved in previous designs; this value is confirmed by our measurements. Our structure will allow compact magneto-optical nonreciprocal devices, such as isolators, integrated on a silicon waveguiding platform.     

Compact efficient broadband grating coupler for silicon-on-insulator waveguides

We have designed a high-efficiency broadband grating coupler for coupling between silicon-on-insulator (SOI) waveguides and optical fibers. The grating is only 13 microm long and 12 microm wide, and the size of the grooves is optimized numerically. For TE polarization the coupling loss to single-mode fiber is below 1 dB over a 35-nm wavelength range when using SOI with a two-pair bottom reflector. The tolerances to fabrication errors are also calculated.     

SOI大截面单模脊形X型分支波导的研制

报道了硅片直接键合（ＳＤＢ）ＳＯＩ大截面单模脊形互型分支波导的研制．对于波长为１．３μｍ的光，在θ＝２°小分支角时，这种分支波导的通道串音小于－２０ｄＢ，辐射损耗小于０．３ｄＢ．直通传输损耗小于０．８５ｄＢ／ｃｍ．     

Electro‐optic Polymer Ring Resonator Modulator on a Flat Silicon‐on‐Insulator

Optical polymers are a promising material of choice in the development of hybrid silicon photonics devices. Particularly, recent progress in electro‐optic (EO) active polymers has shown a strong Pockels effect. A ring resonator modulator is a vital building block for practical applications, such as signal processing, routing, and monitoring. However, the properties of the hybrid silicon and EO polymer ring modulators are still far from their theoretical limits. Here, we demonstrate a unique design of a hybrid ring resonator modulator simply located onto a silicon‐on‐insulator (SOI) substrate. Extra doping and etching of the SOI wafer is not required, even so we measured an in‐device electro‐optic coefficient r₃₃ = 129 pm/V. The ring modulator exhibited a high sensitivity of the electrically tunable resonance, which enabled a 3 dB bandwidth of up to 18 GHz. The proposed technique will enable efficient mass‐production of the micro‐footprint modulators and promote the development of integrated silicon photonics.     

The Design of Single Mode Large Cross-section Glass-based Waveguides for Photonic Integrated Circuits

This paper presents our recent simulation results and novel designs of single mode large cross-section glass-based waveguides for photonic integrated circuits (PICs). Simulations were performed using an in-house Finite Difference (FD) based mode solver and the FD Beam propagation Method (FD-BPM). Our simulation results show that this innovative technology could provide a simplified means to couple optical energy efficiently between optical components in a single chip. This would provide the base for the future large-scale integration of optical components in PICs. The novel idea of using single mode large cross-section glass-based waveguides as an optical integration platform is an evolutionary innovative solution for the monolithic integration of optical components, in which the glass-based structures act both as waveguides and as an optical bench for integration. This allows easy and efficient optical coupling between optical components and optical fibres, removing costly and tedious alignment problems and considerably reducing optical coupling losses in PICs. We expect that the glass-based waveguide PICs technology will enable the emergence of a new generation of compact, reliable, high speed, and multifunctional devices.     

SOI-based trapezoidal waveguide with 45° microreflector for noncoplanar optical interconnect

A silicon on insulator (SOI)-based trapezoidal waveguide with a 45° reflector for noncoplanar optical interconnect is demonstrated. The proposed waveguide is fabricated on an orientation-defined (100) SOI substrate by using a single-step anisotropic wet-etching process. The optical performances of proposed waveguides are numerically and experimentally studied. Transmittance of -4.51 dB, alignment tolerance of ±20 μm, cross talk of -53 dB, and propagation loss of -0.404 dB/cm are achieved The proposed waveguide would be a basic element and suitable for the future intrachip optical interconnects.     

Charge state switching of deep levels for low-power optical modulation in silicon waveguides

We demonstrate a method for the efficient modulation of optical wavelengths around 1550 nm in silicon waveguides. The amplitude of a propagating signal is mediated via control of the charge state of indium centers, rather than using free-carriers alone as in the plasma-dispersion effect. A 1×1 switch formed of an integrated p-i-n junction in an indium-doped silicon on insulator (SOI) waveguide provides 'normally-off' silicon absorption of greater than 7 dB at zero bias. This loss is decreased to 2.8 dB with application of a 6 V applied reverse bias, with a power consumption of less than 1 μW.     

Ultra‐low loss waveguide platform and its integration with silicon photonics

Planar waveguides with ultra‐low optical propagation loss enable a plethora of passive photonic integrated circuits, such as splitters and combiners, filters, delay lines, and components for advanced modulation formats. An overview is presented of the status of the field of ultra‐low loss waveguides and circuits, including the design, the trade‐off between bend radius and loss, and fabrication rationale. The characterization methods to accurately measure such waveguides are discussed. Some typical examples of device and circuit applications are presented. An even wider range of applications becomes possible with the integration of active devices, such as lasers, amplifiers, modulators and photodetectors, on such an ultra‐low loss waveguide platform. A summary of efforts to integrate silicon nitride and silica‐based low‐loss waveguides with silicon and III/V based photonics, either hybridly or heterogeneously, will be presented. The approach to combine these integration technologies heterogeneously on a single silicon substrate is discussed and an application example of a high‐bandwidth receiver is shown.     

Modulational instability in a silicon-on-insulator directional coupler: role of the coupling-induced group velocity dispersion

We report frequency conversion experiments in silicon-on-insulator (SOI) directional couplers. We demonstrate that the evanescent coupling between two subwavelength SOI waveguides is strongly dispersive and significantly modifies modulational instability (MI) spectra through the coupling induced group velocity dispersion (GVD). As the separation between two 380-nm-wide silicon photonic wires decreases, the increasing dispersion of the coupling makes the GVD in the symmetric supermode more normal and suppresses the bandwidth of the MI gain observed for larger separations.