Light outcoupling efficiency enhancement in organic light emitting diodes using an organic scattering layer

Crystallized 4,7‐diphyenyl‐1,10‐phenanthroline (BPhen) films deposited by convenient vacuum thermal evaporation technique have been found to be an efficient means to extract the substrate wave guided light in organic light emitting diodes (OLEDs). The optimized BPhen film working as organic scattering layer was successfully used with OLEDs for light outcoupling efficiency improvement. Enhancement of 26%, 15% and 6% in efficiency of the blue, green and red OLEDs were obtained, respectively. The achievement was found to be advantageous in terms of simplicity of fabrication method and feasibility for large area OLED applications. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

ITO‐free top emitting organic light emitting diodes with enhanced light out‐coupling

Bottom emitting organic light emitting diodes (OLEDs) can suffer from lower external quantum efficiencies (EQE) due to inefficient out‐coupling of the generated light. Herein, it is demonstrated that the current efficiency and EQE of red, yellow, and blue fluorescent single layer polymer OLEDs is significantly enhanced when a MoO_x(5 nm)/Ag(10 nm)/MoO_x(40 nm) stack is used as the transparent anode in a top emitting OLED structure. A maximum current efficiency and EQE of 21.2 cd/A and 6.7%, respectively, was achieved for a yellow OLED, while a blue OLED achieved a maximum of 16.5 cd/A and 10.1%, respectively. The increase in light out‐coupling from the top‐emitting OLEDs led to increase in efficiency by a factor of up to 2.2 relative to the optimised bottom emitting devices, which is the best out‐coupling reported using solution processed polymers in a simple architecture and a significant step forward for their use in large area lighting and displays.     

基于ZnS增透膜的顶发射白光有机发光二极管

顶发射白光有机发光二极管(TEWOLED)在白光照明和全彩显示中有着良好的应用前景, 克服顶发射器件中的微腔效应是制备光电性能良好的TEWOLED的前提. 使用具有高折射率的ZnS作为增透膜改善金属阴极在蓝光波段的透射率,降低其反射性, 从而有效抑制了微腔的影响.同时利用转移矩阵理论和宽角干涉方法分别对阴极结构和 蓝光发光层位置进行了优化,最终获得了高效、色纯度良好、色度随视角变化小的TEWOLED. 最高亮度和效率分别达到9213 cd/m²和3 cd/A,色坐标位于白光区且接近白光等能点, 同时具有良好的视角稳定性,在0°---60°范围内色坐标仅变化(0.02, 0).     

A facile method for flexible GaN‐based light‐emitting diodes

Flexible GaN‐based light‐emitting diodes (LEDs) on polyethylene terephthalate (PET) substrates are demonstrated. The process uses commercial LEDs on patterned sapphire substrates, laser lift‐off (LLO), wet etching for additional surface roughening, and mounting of the freestanding LED on a PET substrate. Electrical and optical properties from the free‐standing LLO‐LEDs mounted on the flexible PET substrates were characterized. The process is scalable to large wafer diameters. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Spectral dependence of light extraction efficiency of high‐power III‐nitride light‐emitting diodes

Using the recently suggested method of processing the data on external quantum efficiency as a function of output optical power, we have estimated the dependence of light extraction efficiency of high‐power light‐emitting diodes (LEDs) on their emission wavelength varied between 425 nm and 540 nm. The extraction efficiency is found to increase with the wavelength from ～80% to ～85% in this spectral range and to correlate with the wavelength dependence of reflectivity of the large‐area p‐electrode being the essential unit of the LED chip design. The correlation found identifies the incomplete reflection of emitted light from the electrode as the major mechanism eventually controlling the spectral dependence of the efficiency of light extraction from the LEDs.

     

Simplified hybrid white organic light‐emitting diodes with efficiency/efficiency roll‐off/color rendering index/color‐stability trade‐off

A high‐performance hybrid white organic light‐emitting diode (WOLED) based on a simple structure has been developed. The resulting device exhibits a maximum total current efficiency and power efficiency of 35.7 cd/A and 30.6 lm/W, respectively. Even at a high luminance of 1000 cd/m², a current efficiency of 32.0 cd/A and a power efficiency of 19.4 lm/W are obtained, suggesting that the device exhibits a low efficiency roll‐off. Besides, the device shows excellent color‐stability during a wide range of luminance and a high color rendering index (CRI) of 83 is obtained. Moreover, the origin of the superior properties is explored comprehensively. Such achieved results demonstrate that high efficiency, low efficiency roll‐off, stable color and high CRI can be simultaneously realized in a simplified hybrid WOLEDs. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Yield analysis of large‐area high‐power single‐chip GaN‐based light‐emitting diodes with network design

In this Letter, a GaN‐based high‐power (HP) single‐chip (SC) large‐area LED with parallel and series network structure is fabricated. The optical characteristics of the HP‐SC LED is investigated. Driven at 600 mA, the optical output power of the HP‐SC LED chip is measured to be 9.7 W, corresponding to an EQE of 26.4%, which is 19.6% lower than that of the standard small LED cell due to both the lateral light‐extraction efficiency degradation and the self‐heating effect. A statistical analysis was carried out to investigate the yield of the fabricated HP‐SC LEDs, the experimental results agree with the theoretical calculations very well, validating the feasibility of this design on the production yield for the large‐area LEDs.

     

Electroluminescence enhancement in ultraviolet organic light‐emitting diode with graded hole‐injection and ‐transporting structure

Electroluminescent intensity and external quantum efficiency (EQE) in ultraviolet organic light‐emitting diodes (UV OLEDs) have been remarkably enhanced by using a graded hole‐injection and ‐transporting (HIT) structure of MoO₃/N,N ′‐bis(naphthalen‐1‐yl)‐N,N ′‐bis(phenyl)‐benzidine/MoO₃/4,4′‐bis(carbazol‐9‐yl)biphenyl (CBP). The graded‐HIT based UV OLED shows superior short‐wavelength emis‐ sion with spectral peak of ～410 nm, maximum electroluminescent intensity of 2.2 mW/cm² at 215 mA/cm² and an EQE of 0.72% at 5.5 mA/cm². Impedance spectroscopy is employed to clarify the enhanced hole‐injection and ‐transporting capacity of the graded‐HIT structure. Our results provide a simple and effective approach for constructing efficient UV OLEDs. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

The photonic perspective of organic light‐emitting transistors

This article will give an overview of the current state‐of‐the‐art of OLETs from the point of view of their photonic characteristics. In particular, the different device structures realized, the materials used and the strategies implemented to integrate optical resonators and waveguiding structures into light‐emitting field‐effect transistors will be reviewed and the main findings discussed. (Picture: Courtesy of E. T. C. srl)     

3,4,9,10-Perylenetetracarboxylicdiimide as an interlayer for ultraviolet organic light emitting diodes

Ultraviolet organic light emitting diodes with 3,4,9,10-perylenetetracarboxylicdiimide (PTCDI) interlayer have been achieved. The emission spectrum and intensity were strongly dependent on the thickness of PTCDI interlayer, in spite of the fact that PTCDI has neither much lower HOMO nor much higher LUMO level, which is considered necessary for efficient charge blocking layers. The influence of PTCDI layer was investigated in three different device configurations and obtained results are discussed. For optimal device configuration, OLED with emission centered at 370 nm and turn-on voltage of 4.5 V is obtained.     

Impact of surface recombination on efficiency of III‐nitride light‐emitting diodes

The paper considers surface recombination at the free active region surface as the mechanism of carrier losses which has not yet been discussed with regard to III‐nitride LEDs despite of its evident importance for AlGaInP‐based light emitters. Using advanced thin‐film and triangular volumetric chip designs reported in literature as prototypes, we have demonstrated by simulation a noticeable impact of surface recombination on the wall‐plug efficiency of InGaN‐based LEDs. Various types of LEDs whose efficiency may be especially affected by surface recombination are discussed. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Thin film hexagonal gold grids as transparent conducting electrodes in organic light emitting diodes

Indium Tin Oxide (ITO) coated glass is currently the preferred transparent conducting electrode (TCE) for organic light emitting diodes (OLEDs). However, ITO has its drawbacks, not least the scarcity of Indium, high processing temperatures, and inflexibility. A number of technologies have been put forward as replacements for ITO. In this paper, an OLED based on a gold grid TCE is demonstrated, the light emission through the grid is examined, and luminance and current measurements are reported. The gold grid has a sheet resistance of 15 Ω□⁻¹ and a light transmission of 63% at 550 nm, comparable to ITO, but with advantages in terms of processing conditions and cost. The gold grid OLED has a lower turn‐on voltage (7.7 V versus 9.8 V) and achieves a luminance of 100 cdm⁻² at a lower voltage (10.9 V versus 12.4 V) than the reference ITO OLED. We discuss the lower turn‐on voltage and the uniformity of the light output through the gold grid TCE and examine the conduction mechanisms in the ITO and gold grid TCE OLEDs.     

High-efficiency silicon light emitting diodes

Silicon has been regarded as a notoriously poor emitter of light fundamentally due to its indirect bandgap. However, as an elemental rather than a compound semiconductor, it has the advantage of fewer background defects as well as well-developed approaches to interface passivation. By minimising parasitic optical absorption and non-radiative bulk and surface recombination, and by enhancing the effective optical photon generation volume, respectable silicon light emission efficiencies are demonstrated. These are within the range of direct gap III–V semiconductors and higher than any at low powered densities. Possible applications are also discussed.     

Development of organic light‐emitting diodes for electro‐optical integrated devices

Organic light‐emitting diodes (OLEDs) are discussed for electro‐optical integrated devices that are used for optical signal transmission. Organic optical devices including polymeric optical fibers are used for optical communication applications to realize polymeric electro‐optical integrated devices. The OLEDs were fabricated by vacuum process, i.e. the organic molecular beam deposition (OMBD) technique or a solution process on a polymeric or a glass substrate, for comparison. Optical signals faster than 100 MHz have been created by applying pulsed voltage directly to the OLED utilizing rubrene doped in 8‐hydoxyquinolinum aluminum (Alq₃), as an emissive layer. OLEDs fabricated by solution process utilizing rubrene doped in carrier‐transporting materials have also discussed. OLEDs utilizing polymeric materials by solution process are also fabricated and discussed. Moving‐picture signals are transmitted utilizing both vacuum‐ and solution‐processed OLEDs, respectively.     

Organic light emitting diodes using magnesium doped organic acceptor as electron injection layer and silver as cathode

Organic light emitting diodes employing magnesium doped electron acceptor 3, 4, 9, 10 perylenetetracarboxylic dianhydride (Mg:PTCDA) as electron injection layer and silver as cathode were demonstrated. As compared to Mg:Ag cathode, the combination of the Mg:PTCDA layer and silver provided enhanced electron injection into tris (8-quinolinolato) aluminium. The device with 1:2 Mg:PTCDA and Ag showed an increase of about 12% in the maximum current efficiency, mainly due to the improved hole-electron balance, and an increase of about 28% in the maximum power efficiency, as compared to the control device using Mg:Ag cathode. The properties of Mg:PTCDA composites were studied as well.     

Direct observation of the potential distribution within organic light emitting diodes under operation

We show the first direct measurement of the potential distribution within organic light emitting diodes (OLEDs) under operation and hereby confirm existing hypotheses about charge transport and accumulation in the layer stack. Using a focused ion beam to mill holes in the diodes we gain access to the cross section of the devices and explore the spatially resolved potential distribution in situ by scanning Kelvin probe microscopy under different bias conditions. In bilayer OLEDs consisting of tris(hydroxyquinolinato) aluminum (Alq₃)/N, N ′‐bis(naphthalene‐1‐yl)‐N,N ′‐bis(phenyl) benzidine (NPB) the potential exclusively drops across the Alq₃ layer for applied bias between onset voltage and a given transition voltage. These findings are consistent with previously performed capacitance–voltage measurements. The behavior can be attributed to charge accumulation at the interface between the different organic materials. Furthermore, we show the potential distribution of devices with different cathode structures and degraded devices to identify the cathode interface as main culprit for decreased performance. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Auger carrier leakage in III‐nitride quantum‐well light emitting diodes

Auger induced leakage is shown to be a contributing factor for the internal quantum efficiency (IQE) droop in III‐nitride quantum‐well light emitting diodes (LEDs). The mechanism is based on leakage current from carrier spill‐out of the well originating from energy transfer during Auger recombination. Adding this leakage reduces the Auger coefficient by 50% when compared to a standard Auger model with cubic density dependence. As reference, experimental data of a green quantum‐well LED are taken. Direct leakage due to non‐ideal carrier capture and re‐emission out of the well affects the IQE at current densities much larger than the maximum IQE point. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Improved light extraction of organic light emitting diodes with a nanopillar pattering structure

We have investigated the properties of organic light emitting diodes(OLEDs)with a nanopillar patterning structure at organic–metal or organic–organic interfaces.The results demonstrate that the introduction of a nanopillar structure can improve the light extraction efficiency greatly.We also find that the number,height,and position of nanopillars all affect the light extraction of OLEDs.The maximum power efficiency of a device with an optimized nanopillar patterning mode can be improved to 2.47 times that of the reference device.This enhancement in light extraction originates from the improved injected carriers,the broadened charge recombination zone,and the intensified wave guiding effects.     

修饰阴极界面提高聚合物白光二极管发光效率

利用聚合物的不同溶解性,研究用旋涂方法制备双层高分子白光二极管(WPLED),采用器件结构为：ITO/PEDOT(50nm)/PVK:PFO-BT: PFO-DBT(40nm)/PFO(40nm)/Ba(4nm) /Al(120nm),当相对比例为PVK: PFO-BT:PFO-DBT=1∶4%：3%时,得到标准白光,最大电流效率为2.4 cd/A,最大亮度为3215 cd/m²,色坐标为(0.33,0.34).用水溶性的聚电介质层修饰阴极界面,器件效率可以进一步提高到5.28 cd 关键词： 聚合物发光二极管 白光 双发光层结构     

ITO/有机半导体/金属结构OLED器件的数值模拟

基于稳态的小信号漂移扩散方程,建立了有电极的单层有机电致发光(OLED)器件的数值模型,编制的MATLAB程序,首先模拟了文献中的OLED器件电极附近正电荷层(面电荷)对器件J-V的影响,得到了和文献中一致的结果. 模拟了ITO/PPV/Ca结构的OLED器件,模拟时,考虑了OLED阳极附近存在正体电荷,得到的J-V曲线和文献中的实验结果一致,体电荷产生了势垒,影响了电流曲线. 关键词： 有机电致发光 数值模拟 漂移扩散模型