Assessment of strength properties of cemented paste backfill by ultrasonic pulse velocity test

Ultrasonic pulse velocity (UPV) test is one of the most popular non-destructive techniques used in the assessment of the mechanical properties of concrete or rock materials. In this study, the effects of binder type/dosage, water to cement ratio (w/c) and fines content (<20 μm) of the tailings on ultrasonic pulse velocity (UPV) of cemented paste backfill (CPB) samples were investigated and correlated with the corresponding unconfined compressive strength (UCS) data. A total of 96 CPB samples prepared at different mixture properties were subjected to the UPV and UCS tests at 7, 14, 28 and 56-days of curing periods. UPV and UCS of CPB samples of ordinary Portland cement (CEM I 42.5 R) and sulphate resistant cement (SRC 32.5) initially increased rapidly, but, slowed down after 14 days. However, UPV and UCS of CPB samples of the blast furnace slag cement (CEM III/A 42.5 N) steadily increased between 7 and 56 days. Increasing binder dosage or reducing w/c ratio and fines content (<20 μm) increased the UCS and UPV of CPB samples. UPV was found to be particularly sensitive to fines content. UCS data were correlated with the corresponding UPV data. A linear relation appeared to exist between the UCS and UPV of CPB samples. These findings have demonstrated that the UPV test can be reliably used for the estimation of the strength of CPB samples.     

Fabrication, magnetism and high frequency application of exchange-coupled Fe65Co35±2-SiO1.7±0.2 granular films

A series of (Fe₆₅Co_35±2)_x-(SiO_1.7±0.2)_1−x nano-granular films with various metal volume fractions (x) were fabricated by rf sputtering. In a wide range, excellent soft magnetic properties have been achieved. In the x range from 0.7 to 0.48, the films exhibit small coercivity H_c not exceeding 4 Oe and high electrical resistivity ρ up to 1.15 × 10⁴ μΩ cm. And a minimum H_c value of 1.65 Oe was obtained for the sample of x = 0.57 with ρ = 2.86 × 10³ μΩ cm. At a frequency lower than 2.0 GHz, the real part μ′ of complex permeability of this sample is more than 170 and the FMR frequency is as high as 2.6 GHz, implying a high cut-off frequency for high frequency applications. With decreasing Fe₆₅Co_35±2 volume fraction, the resistivity of films increases remarkably and the grain size decreases obviously. At the same time, the coercivity H_c decreases with grain size decreasing, which is consistent with the conclusion resulted from random anisotropy model quoted by Herzer. Study on Henkel plots shows that intergranular ferromagnetic exchange coupling exists among grains and is important for realizing soft magnetic properties.     

Influence of rare earth Ce on structural, electrical and magnetic properties of Sr based W-type hexagonal ferrites

A series of single phase W-type Sr_3−xCe_xFe₁₆O₂₇ (x=0, 0.02, 0.04, 0.06, 0.08, 0.10) hexagonal ferrites prepared by the Sol-Gel method was sintered at 1050 °C for 5 h. The X-ray diffraction analysis reveals that all the samples belong to the family of W-type hexagonal ferrites. The c/a ratio falls in the range of W-type hexagonal ferrites. The grain size was measured by SEM varies from 0.7684 to 0.4366 μm which shows that the Ce³⁺ substituted samples have smaller grain size than pure ferrite Sr₃Fe₁₆O₂₇ which results from the difference in ionic radii of Ce³⁺ (1.034 Å) and Sr²⁺ (1.12 Å). The room temperature resistivity of the present samples varies from 6.5×10⁸ to 272×10⁸ Ω-cm. The coercivity increases from 1370 to 1993 Oe which is consistent with the decrease in grain size. The coercivity values indicate that the present samples fall in the range of hard ferrites. The large value of H_c may be due to domain wall pinning at the grain boundaries.     

Deposition of quasi-crystal Al-doped ZnO thin films for photovoltaic device applications

Quasi-crystal aluminum-doped zinc oxide (AZO) films were prepared by in situ radio frequency (RF) magnetron sputtering (sputtering without annealing) on glass substrates. The influence of deposition parameters on the optoelectronic and structural properties of the in situ deposited quasi-crystal AZO films was investigated in order to compare resulting samples. X-ray diffraction (XRD) patterns show that the quasi-crystal AZO thin films have excellent crystallization improved with increase of the RF power and substrate temperature, with an extremely preferential c-axis orientation exhibit sharp and narrow XRD pattern similar to that of single-crystal. Field emission scanning electron microscopy (FESEM) images show that quasi-crystal AZO thin films have uniform grains and the grain size increase with the increase of RF power and substrate temperature. Craters of irregular size with the columnar structure are observed in the quasi-crystal AZO thin films at a lower substrate temperature while many spherical shaped grains appeared at a higher substrate temperature. The average optical transmittance of all the quasi-crystal AZO films was over 85% in the 400-800 nm wavelength range. The resistivity of 4.176 × 10⁻⁴ Ω cm with the grain size of 76.4891 nm was obtained in the quasi-crystal AZO thin film deposited at 300 °C, under sputtering power of 140 W.     

Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering

Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10⁻⁴ Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV.     

Electron surface states in short-period superlattices: (GaAs)2/(AlAs)2(1 0 0)-c(4 × 4)

The electronic structure of (GaAs)₂/(AlAs)₂(1 0 0)-c(4 × 4) superlattice surfaces was studied by means of angular-resolved photoelectron spectroscopy (ARUPS) in the photon energy range 20-38 eV. Four samples with different surface termination layers were grown and As-capped by molecular beam epitaxy (MBE). ARUPS measurements were performed on decapped samples with perfect c(4 × 4) reconstructed surfaces. An intensive surface state was, for the first time, observed below the top of the valence band. This surface state was found to shift with superlattices’ different surface termination in agreement with theoretical predictions.     

Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method

Deep level transient spectroscopy (DLTS) is employed to study deep level defects in n-6H-SiC (silicon carbide) epilayers grown by the sublimation method. To study the deep level defects in n-6H-SiC, we used as-grown, nitrogen doped and nitrogen-boron co-doped samples represented as ELS-1, ELS-11 and ELS-131 having net (N_D–N_A) ∼2.0×10¹² cm⁻³, 2×10¹⁶ cm⁻³ and 9×10¹⁵ cm³, respectively. The DLTS measurements performed on ELS-1 and ELS-11 samples revealed three electron trap defects (A, B and C) having activation energies E_c – 0.39 eV, E_c – 0.67 eV and E_c – 0.91 eV, respectively. While DLTS spectra due to sample ELS-131 displayed only A level. This observation indicates that levels B and C in ELS-131 are compensated by boron and/or nitrogen–boron complex. A comparison with the published data revealed A, B and C to be E₁/E₂, Z₁/Z₂ and R levels, respectively.     

Structure and properties of transparent conductive doped ZnO films by pulsed laser deposition

High quality transparent conductive ZnO thin films were deposited on quartz glass substrates using pulsed laser deposition (PLD). We varied the growth conditions such as the substrate temperature and oxygen pressure. X-ray diffraction (XRD), X-ray photoelectron spectrometer (XPS), and atomic force microscopy (AFM) measurements were done on the samples. All films show n-type conduction, the best transparent conductive oxide (TCO) performance (Al-doped ZnO = 1.33 × 10⁻⁴ Ω cm, Ga-doped ZnO = 8.12 × 10⁻⁵ Ω cm) was obtained on the ZnO film prepared at pO₂ = 5 mTorr and T_s = 300 °C.     

Thickness dependence of structural, electrical and optical behaviour of undoped ZnO thin films

Undoped ZnO thin films of different thicknesses were prepared by r.f. sputtering in order to study the thickness effect upon their structural, morphological, electrical and optical properties. The results suggest that the film thickness seems to have no clear effect upon the orientation of the grains growth. Indeed, the analysis with X-ray diffraction show that the grains were always oriented according to the c(0 0 2)-axis perpendicular to substrate surface whatever the thickness is. However, the grain size was influenced enough by this parameter. An increase in the grain size versus the thickness was noted. For the electrical properties, measurements revealed behaviour very dependent upon thickness. The resistivity decreased from 25 to 1.5×10⁻³ Ω cm and the mobility increased from 2 to 37 cm² V⁻¹ s⁻¹ when the thickness increased from 70 to 1800 nm while the carrier concentration seems to be less affected by the film thickness and varied slightly remaining around 10²⁰ cm⁻³. Nevertheless, a tendency to a decrease was noticed. This behaviour in electrical properties was explained by the crystallinity and the grain size evolution. The optical measurements showed that all the samples have a strong transmission higher than 80% in the visible range. A slight shift of the absorption edge towards the large wavelengths was observed as the thickness increased. This result shows that the band gap is slightly decreases from 3.37 to 3.32 eV with the film thickness vary from 0.32 to 0.88 μm.     

D2 layers on MgO(0 0 1): Simulation study

In response to recent helium atom scattering (HAS) and neutron scattering results, Monte Carlo simulations and perturbation theory calculations have been performed for D₂ on MgO(0 0 1). Monte Carlo simulations predict that D₂ molecules form a series of interesting structures, p(2 × 2) → p(4 × 2) → p(6 × 2), with coverages Θ = 0.5, 0.75, 0.83 respectively, and followed by a formation of a top layer of p(6 × 2) unit cell symmetry. The three types of mono-layers are stable up to 13 K, whereas the top layer still exists up to 10 K. This is in partial agreement with the neutron scattering and HAS results that report c(2 × 2), c(4 × 2) and c(6 × 2); they agree in terms of coverage and stability, but disagree in terms of symmetry. A quantum mechanical examination of the D₂ molecules’ rotational motion shows the molecular axes are azimuthally delocalized and hence the simulated structures are c-type rather than p-type. These calculations also indicate that ortho-D₂ and helicoptering para-D₂ prefer cationic sites, while cartwheeling para-D₂ prefers anionic sites.     

Preparation and multi-properties of insulated single-phase BiFeO3 ceramics

Six types of BiFeO₃ ceramic samples, with subtle differences in synthesis conditions, were prepared. The comparison of their phases, electrical resistivity, and porosity revealed that the use of Bi₂O₃ and Fe₂O₃ powders of <1 μm size and a rapid liquid-phase sintering process of 855 °C for 5 min at 100 °C/s is beneficial to synthesize poreless single-phase BiFeO₃ samples with high electrical resistivity of ∼5×10¹² Ω cm. Deoxygenated Bi_xFe_yO_{1.5x+1.5y−δ} (x≠y, δ≥0) impurities were identified and found to be the main cause of low electrical resistivity and high porosity in the multi-phase samples. Large saturation polarization of 16.6 μC/cm² and low leakage current density of 30 mA/m², both at a high electric field of 145 kV/cm, were measured in the optimized single-phase samples at room temperature besides a large piezoelectric d₃₃ coefficient of 27 pC/N and an obvious canted antiferromagnetic behavior.     

Effects of vanadium doping on structure and electrical properties of SrBi4Ti4O15 thin films

The effects of vanadium(V) doping into SrBi₄Ti₄O₁₅ (SBTi) thin films on the structure, ferroelectric, leakage current, dielectric, and fatigue properties have been studied. X-ray diffraction result showed that the crystal structure of the SBTi thin films with and without vanadium is the same. Enhanced ferroelectricity was observed in the V-doped SrBi₄Ti₄O₁₅ (SrBi_4−x/3Ti_4−xV_xO₁₅, SBTiV-x (x = 0.03, 0.06, and 0.09)) thin films compared to the pure SrBi₄Ti₄O₁₅ thin film. The values of remnant polarization (2P_r) and coercive field (2E_c) of the SBTiV-0.09 thin film capacitor were 40.9 μC/cm² and 105.6 kV/cm at an applied electric field of 187.5 kV/cm, respectively. The 2P_r value is over five times larger than that of the pure SBTi thin film capacitor. At 100 kHz, the values of dielectric constant and dielectric loss were 449 and 0.04, and 214 and 0.06 for the SBTiV-0.09 and the pure SBTi thin film capacitors, respectively. The leakage current density of the SBTiV-0.09 thin film capacitor measured at 100 kV/cm was 6.8 × 10⁻⁹ A/cm², which is more than two and a half orders of magnitude lower than that of the pure SBTi thin film capacitor. Furthermore, the SBTiV-0.09 thin film exhibited good fatigue endurance up to 10¹⁰ switching cycles. The improved electrical properties may be related to the reduction of internal defects such as bismuth and oxygen vacancies with changes in the grain size by doping of vanadium into SBTi.     

Infrared reflection absorption study of carbon monoxide adsorption on Cu(1 0 0)-c(2 × 2)-Pd surfaces formed by palladium vacuum-depositions at various temperatures

Using infrared reflection absorption spectroscopy (IRRAS) and temperature programmed desorption (TPD), we investigated carbon monoxide (CO) adsorption and desorption behaviors on atomic checkerboard structures of Cu and Pd formed by Pd vacuum deposition at various temperatures of Cu(1 0 0). The 0.15-nm-thick Pd deposition onto a clean Cu(1 0 0) surface at room temperature (RT) showed a clear c(2 × 2) low-energy electron diffraction (LEED) pattern, i.e. Cu(1 0 0)-c(2 × 2)-Pd. The RT-CO exposure to the c(2 × 2) surfaces resulted in IRRAS absorption caused by CO adsorbed on the on-top sites of Pd. The LEED patterns of the Pd-deposited Cu(1 0 0) at higher substrate temperatures revealed less-contrasted c(2 × 2) patterns. The IRRAS intensities of the linearly bonded CO bands on 373-K-, 473-K-, and 673-K-deposited c(2 × 2) surfaces are, respectively, 25%, 22%, and 10% less intense than those on the RT-deposited surface, indicating that Pd coverages at the outermost c(2 × 2) surfaces decrease with increasing deposition temperature. In the initial stage of the 90-K-CO exposure to the RT surface, the band attributable to CO bonded to the Pd emerged at 2067 cm⁻¹ and shifted to higher frequencies with increasing CO exposure. At saturation coverage, the band was located at 2093 cm⁻¹. In contrast, two distinct bands around 2090 cm⁻¹ were apparent on the spectrum of the 473-K-deposited surface: the CO saturation spectrum was dominated by an apparent single absorption at 2090 cm⁻¹ for the 673-K-deposited surface. The TPD spectra of the surfaces showed peaks at around 200 and 300 K, which were ascribable respectively to Cu-CO and Pd-CO. Taking into account the TPD and IRRAS results, we discuss the adsorption-desorption behaviors of CO on the ordered checkerboard structures.     

Superconductivity in porous MgB2

Porous magnesium diboride samples have been prepared by the heat treatment of a pressed mixture of Mg and MgB₂ powders. It was found that linked superconducting structure is formed down to the minimum normalized density γ_c=d/d₀≅0.16 (percolation threshold), where d is the density of MgB₂ averaged over the sample, d₀=2.62 g/cm³ is the X-ray density. Lattice parameters and critical temperature of the porous sample decrease with increasing porosity (decreasing γ) and T_c2≅32 K is minimal at γ_c. The grain boundaries in the porous samples are transparent for the current and J_c∼3×10⁵ A/cm² in self field at T=20 K in the samples with γ∼0.24.     

Influence of target substrate distance on the properties of transparent conductive Si doped ZnO thin films

Si doped zinc oxide (SZO, Si3%) thin films are grown at room temperature on glass substrates under argon atmosphere, using direct current magnetron sputtering. The influence of the target substrate distances on structure, morphology, optical and electrical properties of SZO thin films is investigated. Experimental results show that the target substrate distances have a significance impact on the growth rate, crystal quality and electrical properties of the films, and have little impact on the optical properties of the films. SZO thin film samples grown on glasses are polycrystalline with a hexagonal wurtzite structure and have a preferred orientation along the c-axis perpendicular to the substrate. When the target substrate distance decreases from 76 to 60 mm, the degree of crystallization of the films increased, the grain size increases, and the resistivity of films decreases. However, when the distance continuously decreases from 60 to 44 mm, the degree of crystallization of the films decreased, the grain size decreases, and the resistivity of the films increases. SZO(3%) thin films deposited at a target substrate distance of 60 mm show the lowest resistivity of 5.53 × 10⁻⁴ Ω cm, a high average transmission of 94.47% in the visible range, and maximum band gap of 3.45 eV under 5 Pa of argon at sputtering power of 75 W for sputtering time of 20 min.     

Combined STM, LEED and DFT study of Ag(1 0 0) exposed to oxygen near atmospheric pressures

We have investigated the interaction of molecular oxygen with the Ag(1 0 0) surface in a temperature range from 130 K to 470 K and an oxygen partial pressure ranging up to 10 mbar by scanning tunneling microscopy, low electron energy diffraction, Auger electron spectroscopy and ab initio density functional calculations. We find that at 130 K, following oxygen exposures of 6000 Langmuirs O₂, the individual oxygen atoms are randomly distributed on the surface. When the sample is exposed to 10 mbar O₂ at room temperature, small, p(2 × 2) reconstructed patches are formed on the surface. After oxidation at ≈470 K and 10 mbar O₂ pressure the surface undergoes a c(4 × 6) reconstruction coexisting with a (6 × 6) superstructure. By ab initio thermodynamic calculations it is shown that the c(4 × 6) reconstruction is an oxygen adsorption induced superstructure which is thermodynamically stable for an intermediate range of oxygen chemical potential.     

Enhancement of room temperature ferromagnetism of Fe-doped ZnO epitaxial thin films with Al co-doping

Epitaxial films of ZnO doped with magnetic ion Fe and, in some cases, with 1% Al show clear evidence of room temperature ferromagnetic ordering. The Al doped optimized samples with carrier concentration n_c∼8.0×10²⁰ cm⁻³ show about 3 times enhanced saturation magnetization (0.58 μ_B/Fe²⁺) than the one with n_c∼3.0×10²⁰ cm⁻³ (0.18 μ_B/Fe²⁺). A clear correlation between the magnetization per transition metal ion and the ratio of the number of carriers to the number of donors have been found as is expected for carrier-induced room temperature ferromagnetism. The transport mechanism of the electrons in all the DMS films at low temperature range has been identified with the Efros's variable range hopping due to the electron-electron Coulomb interaction.     

Anisotropy of two-photon absorption in gallium selenide at 1064 nm

The Bridgman method is used to grow single crystals of ε-GaSe. The two-photon absorption (TPA) coefficient β was measured for especially un-doped crystals at room temperature for the ordinary o-ray (β_⊥) and extraordinary e-ray (β_∥) using single-wavelength excitation by a Nd:YVO₄ laser at 1.064 μm with a pulse duration of 10 ps and a repetition rate of 81 MHz. No large anisotropy was observed for the TPA coefficients between the two geometries. The TPA coefficients were found to be β_⊥ = 1.07 × 10⁻⁹ cm/W and β_∥ = 1.88 × 10⁻⁹ cm/W. It was found that doping slightly increases the TPA coefficient. The value of the TPA for crystals doped with 0.5 at.% of Tl is β_⊥ = 7.56 × 10⁻⁹ cm/W.     

Influence of sintering time on structural,magnetic and electrical properties of Si–Ca added Sr-hexa ferrites

Sr-hexa ferrites with the addition of Si (0.5 wt%) and Ca (0.5 wt%) have been prepared by solid-state reaction method with sintering time variation ranging from 2 to 10 h. The structural characterization of the samples confirmed the major phase of Sr-hexa ferrite. Average grain size was found within the range of 1–4 μm. Vicker hardness increased from 512 to 1187H_v. The coercivity and remanence had the ranges from 596 to 4255 Oe and 324 to 516 G, respectively. The DC electrical resistivity measurements were carried out by two-probe method as a function of temperature from 303 to 723 K. The room temperature DC resistivity increased from 1.67×10⁶ to 2.89×10⁸ Ω cm in turn the activation energy also increased from 0.314 to 0.495 eV. The DC electrical resistivity decreased while drift mobility increased with the rise in temperature, ensuring the semi-conducting behavior. Dielectric properties were studied as a function of frequency in the range of 80 Hz to 1 MHz at room temperature.     

High frequency study of electropolymerised conducting polypyrrole thin film

The polypyrrole (PPY) thin films were synthesized by electropolymerisation in potassium nitrate solution. The substrate used was stainless steel. DC conductivity, microwave reflection, microwave conductivity and microwave dielectric constant of the conducting PPY thin films are reported. DC conductivity was between 1.6 × 10⁻² S/cm and 42.3 × 10⁻² S/cm. Microwave conductivity was between 10 S/cm and 160 S/cm. The ?′ generally decreases as frequency increases similarly ?″ also decreases with increases in frequency. The measurements have been carried over the frequency range 8.2-12 GHz. These polypyrrole thin films were characterized by FTIR. The polypyrrole thin film increases the reflectivity of the stainless steel.