Variations from Zn1-xCoxO Magnetic Semiconductor to Co-ZnCoO Granular Composite

We investigate the variations from as-deposited Zn1-x： Cox O magnetic semiconductors to the post-annealed Co- ZnCoO granular composite. The as-deposited Zn1-x Cox 0 magnetic semiconductor deposited under thermal nonequilibrium conditions is composed of Zn1-x. Cox O nanograins of high Co concentration. The room-temperature ferromagnetism with high magnetization and large negative magnetoresistance are found in the as-deposited samples. By annealing, the samples become of granular composite consisting of the Co metal grains and the remanent Zn1-x CoxO matrix. Although the magnetization is enhanced after annealing, the spin-dependent negative magnetoresistance disappears at room temperature. The magnetoresistance observed in the annealed samples in the high field region has no relation with the ferromagnetism, which in turn indicates that the roomtemperature ferromagnetism and large negative magnetoresistance observed in the as-deposited are the intrinsic properties of the Zn1-x Cox O magnetic semiconductor.     

Room-Temperature Ferromagnetism in Zn1-xMnxO Thin Films Deposited by Pulsed Laser Deposition

Zn1-xMnxO （x = O.Olq3.1） thin films with a Curie temperature above 300K are deposited on Al2O3 （0001） substrates by pulsed laser deposition. X-ray diffraction （XRD）, ultraviolet （UV）-visible transmission and Raman spectroscopy are employed to characterize the microstructural properties of these films. Room temperature ferromagnetism is observed by superconducting quantum interference device （SQUID）. The results indicate that Mn doping introduces the incorporation of Mn^2＋ ions into the ZnO host matrix and the insertion of Mn^2＋ ions increases the lattice defects, which is correlated with the ferromagnetism of the obtained films. The doping concentration is also proven to be a crucial factor for obtaining highly ferromagnetic Zn1-xMnxO films.     

Magnetic properties of amorphous Ge–Fe thin films

Thin films of Ge_100−xFe_x (x in at%) alloys, fabricated by thermal co-evaporation, have an amorphous structure at compositions x<∼40, although an unidentified crystalline phase with an FCC symmetry also exists at low Fe content. Magnetization versus temperature curves show that saturation magnetization is non-zero (1 to 2.5 emu/cm³) and remains nearly unchanged up to the highest measured temperature of 350 K. Magnetic hysteresis loops at room temperature show a typical ferromagnetic shape, complete saturation occurring by 1–2 kOe. These results may indicate ferromagnetic ordering at room temperature. No definite tendency is observed in the compositional dependence of saturation magnetization.     

Electronic Structure and Magnetic Properties of SmCo7-xZrx

The electronic structure and magnetism of SmCo_7-xZr_x alloy are investigated using the spin-polarized MS-X. method. The results show that a few of electrons are transferred to the Sm(5d⁰) orbital due to orbital hybridization between Sm and Co atoms. The exchange interactions between 3d and 5d electrons are more important than the polarization effects of the conductive electrons, thus it is the main reason resulting in the long-range ferromagnetic order in SmCo_7-xZr_x. The Curie temperature of SmCo_7-xZr_x is generally lower than that of corresponding pure Co, which may be explained by the weaker average coupling strength between Co lattices due to some negative couplings mainly occurring of 2e site. The calculated results for the Sm₅Co₃₂Zr₂ cluster may lead to a better understanding of why SmCo_7-xZr_x is stable phase. Since the spin-up DOS peak of d electrons at E_F arises and the bonding of electrons at E_F strengthens with increasing Zr concentration, which results in the internal energy of the system decrease, the stable ferromagnetic order forms in SmCo_7-xZr_x.     

Magnetic properties of Co-doped SnO2 at different carrier concentrations

Magnetic properties of Co-doped wide-gap semiconductor SnO₂ were studied theoretically by using the PPLCAO first-principles computational scheme. Since the carrier plays an important role on magnetic properties about diluted magnetic semiconductors (DMS) materials, we discuss the origin of magnetic moments and the magnetic ordering mechanism with different carrier concentration in Co-doped SnO₂ based on calculated spin density distribution. It is found that, the RKKY interaction is dominated in the magnetic coupling in Co-doped SnO₂.     

Electronic transport properties and Microstructures of TiO2:Co magnetic semiconductors

TiO₂:Co thin films of high Co concentration were investigated by the high resolution transmission electron microscopy, physical property measurement system and energy dispersive X-ray. The as-deposited films are amorphous magnetic semiconductors and we did not find any Co metal particles in them. The electronic transport process in the low-temperature range below 80 K could be described by the spin-dependent variable-range-hopping process. However, after the samples were annealed at 300 °C, large amounts of Co metal particles were observed to connect each other and the films show a metallic behavior. The origin of ferromagnetism of the thin films is also discussed.     

Magnetic properties of R2WO6 (where R=Nd, Sm, Eu, Gd, Dy and Ho)

The magnetic and electrical measurements carried out on the R₂WO₆ tungstates showed a paramagnetic behaviour for samples with R=Nd, Gd, Dy and Ho and more complex one for samples with R=Sm and Eu in the temperature range 4.2-280 K and an insulating state at room temperature. With increasing atomic number of the R element the Curie-Weiss temperature increases from −43.5 K for Nd₂WO₆ to −2.7 K for Ho₂WO₆, excluding Sm₂WO₆ and Eu₂WO₆ compounds for that the Curie-Weiss region is not observed and the imaginary part of susceptibility is close to zero. The effective magnetic moment is close to the theoretical one for the free R ion and the magnetic moment measured in magnetic field of 14 T and at temperature of 4.2 K, generally, does not reach the saturation state. The temperature independent residual susceptibility is negative for Nd₂WO₆ and positive for the remaining compounds suggesting different proportions of the Landau, Pauli and van Vleck contributions to the total susceptibility. An increase of the orbital magnetic contribution to the total magnetic moment is suggested from the fitting of the Landé factor in the compounds under study.     

Synthesis and Characteristics of Electrodeposited CoxZn1-x Nanorods

CoxZn1-x nanorod arrays were fabricated by electrodeposition in porous anodic aluminum oxide templates at different electric potentials. X-ray diffraction and transmission electron microscopy indicate that highly-ordered and uniform nanorods have been fabricated. The amounts of Co and Zn contents are investigated using energy dispersive spectroscopy, which demonstrates that the atom ratio of the alloy nanorods changes with the deposition potential. In addition, magnetic measurements show that the magnetic isotropy Co-rich CoZn nanorods will change to magnetic anisotropy nanorods with the easy axis parallel to the rod long axis with decreasing Co content.     

Structural and Magnetic Properties of Sm Implanted GaN

The structural and magnetic properties of Sm ion-implanted GaN with different Sm concentrations are investigated. XRD results do not show any peaks associated with second phase formation. Magnetic investigations performed by superconducting quantum interference device reveal ferromagnetic behavior with an ordering tem- perature above room temperature in all the implanted samples, while the effective magnetic moment per Sin obtained from saturation magnetization gives a much higher value than the atomic moment of Sm. These results could be explained by the phenomenological model proposed by Dhar et al. [Phys. Rev. Lett. 94（2005）037205, Phys. Rev. B 72（2005）245203] in terms of a long-range spin polarization of the GaN matrix by the Sm atoms.     

Magnetic and structural studies of the double perovskites Ba2REMoO6

A magnetic, electronic and structural study of the double perovskites Ba₂REMoO₆ (RE=Sm, Eu, Gd, Dy) has been performed. All materials crystallise in the cubic symmetry space group and the cell volume decreases as RE varies from Sm to Dy in accordance with Vegard's law. An antiferromagnetic transition is observed below T_N=130 and 112 K for RE=Sm and Eu, respectively. The Néel temperatures of these ordered rare earth molybdenum double perovskites are much higher than previously observed in double perovskites containing Eu or Sm and a 4d or 5d transition metal arranged in an ordered rock salt configuration. The high Néel temperatures arise due to a strong superexchange magnetic interaction via the Mo-O-RE-O-Mo pathway. All of the phases are electronically insulating and there is no evidence of magnetoresistance at any temperature.     

Magnetic microstructure of candidates for epitaxial dual Heusler magnetic tunnel junctions

Heusler alloys are considered as interesting ferromagnetic electrode materials for magnetic tunnel junctions, because of their high spin polarization. We, therefore, investigated the micromagnetic properties in a prototypical thin film system comprising two different Heusler phases Co₂MnSi (CMS) and Co₂FeSi (CFS) separated by a MgO barrier. The magnetic microstructure was investigated by X-ray photoemission electron microscopy (XPEEM). We find a strong influence of the Heusler phase formation process on the magnetic domain patterns. SiO₂/V/CMS/MgO/CFS and SiO₂/V/CFS/MgO/CMS trilayer structures exhibit a strikingly different magnetic behavior, which is due to pinhole coupling through the MgO barrier and a strong thickness dependence of the magnetic ordering in Co₂MnSi.     

Magnetic properties of (Ga,Mn)As

A summary of experimental findings and theoretical modelling of micromagnetic properties of zinc-blende ferromagnetic semiconductor (Ga,Mn)As is presented. It is shown that the Zener p–d model explains quantitatively observed Curie temperatures in compensation free samples and that major strain-related effects are correctly accounted for, including the presence of the magnetization reorientation transition, observed as a function of hole concentration and temperature. It is evidenced that a presence of a small trigonal distortion could account for both the presence and properties of uniaxial in-plane magnetic anisotropy.     

Effects of sintering temperature and atmosphere on magnetism in Mn-doped TiO2 bulk samples

Magnetic properties have been investigated on Mn doped TiO₂(Ti_0.98Mn_0.02O₂) bulk samples prepared by solid state reaction, which were sintered at different temperature ranging from 450 ^°C to 900 ^°C in air and argon atmosphere, respectively. The results show that the magnetic properties were strongly dependent on the sintering temperature and atmosphere. For samples sintered in air, the magnetization initially increase with the increase of sintering temperature up to 600 ^°C and thereafter it decrease. While the magnetization of samples sintered in argon atmosphere decreases monotonically with the increase of sintering temperature. Furthermore, for samples sintered at 600 ^°C in air, the magnetic susceptibility exhibits a dominant Curie-Weiss behaviour and no magnetic transition is observed over the temperature range from 10 to 300 K. In contrast, for samples sintered in argon atmosphere, besides the magnetic transition near 45 K perhaps caused by Mn₃O₄, another magnetic transition appears near room temperature.     

Effect of indium incorporation in Zn1−xCoxO thin films

In the present paper, the preliminary investigations of a series of ZnO thin films co-doped with indium and cobalt with an objective to elucidate the correlation, if any, between the carrier concentration and the induced room temperature ferromagnetism (RTFM), are presented. The single-phasic (Zn_99.5In_0.5)_1−xCo_xO thin films are deposited by spray pyrolysis. The substitution of Zn²⁺ by Co²⁺ has been established by optical transmission analysis of these films. The films are ferromagnetic at room temperature; and the magnetization has higher value for indium and cobalt co-doped thin film as compared with Zn0₉₀Co_0.1O thin film (having no indium).     

Origin of Room-Temperature Ferromagnetism for Cobalt-Doped ZnO Diluted Magnetic Semiconductor

The pure single phase of Zn0.95 Co0.05 O bulks is successfully prepared by solid-state reaction method. The effects of annealing atmosphere on room-temperature ferromagnetic behaviour for the Zn0.95 Co0.05 O bulks are investigated. The results show that the air-annealed samples has similar weak ferromagnetic behaviour with the as-sintered samples, but the obvious ferromagnetic behaviour is observed for the samples annealed in vacuum or Ar/H2 gas, indicating that the strong ferromagnetism is associated with high oxygen vacancies density. High saturation magnetization Ms = 0.73μg/Co and coercivity Hc = 233.8 Oe are obtained for the Ar/H2 annealed samples with pure single phase structure. The enhanced room-temperature ferromagnetic behaviour is also found in the samples with high carrier concentration controlled by doping interstitials Zn （Zni）.     

Influence of Mn-Doped Content on Ferromagnetism of Ga1-xMnxN Film Grown by LP-MOVPE

The diluted magnetic semiconductor Ga_1-xMn_xN was achieved by low-pressure metal organic vapour-phase epitaxy (LP-MOVPE). Proton-induced x-ray emission was employed non-destructively, quickly and accurately to determine the Mn-doped content. The magnetic property was measured by a superconducting-quantum-interference-device (SQID) magnetometer. Apparent ferromagnetic hysteresis loops measured at or above room temperature are presented. No ferromagnetic secondary phases were detected by high-resolution x-ray diffraction. The experimental results show that the ferromagnetic signal firstly decreases and then increases with the increasing Mn-doped content from 0.23% to 4.69% and it is the weakest when Mn content is 0.51%. The annealing treatment could make the ferromagnetic property stronger.     

Growth and characterization of rocksalt MnS/GaAs epilayers by hot-wall epitaxy

Epitaxial growth characteristics of α-MnS on GaAs(1 0 0) substrates have been investigated by X-ray diffraction and double crystal rocking curve measurements. Growth of stoichiometric α-MnS films has been performed by hot-wall epitaxy using Mn and ZnS as a source of sulfur. The films on GaAs(1 0 0) at low substrate temperature exhibit multiphase crystal structures of zincblende and rocksalt, and the main structure is changed to rocksalt with increasing substrate temperature. Photoluminescence spectrum of the α-MnS epilayer at 5 K exhibits broad emission bands, which are attributed to Mn²⁺ ions. The band gap energy of the α-MnS epilayer at room temperature was also estimated to be about 3.3 eV by reflection.     

Antiferromagnetic versus spin-glass like behavior in MnIn2S4

The low-temperature magnetic properties of MnIn₂S₄ have been studied using AC magnetic susceptibility and magnetization experiments. High-temperature susceptibility fits indicate the presence of antiferromagnetic interactions. Low-field magnetization data show a peak at 5.6±0.1 K, below which strong irreversibility is observed between zero-field-cooled (ZFC) and field-cooled (FC) cycles suggesting that the observed peak corresponds to a spin-glass-like transition instead of the antiferromagnetic one previously reported. Further evidence of this magnetic state comes from AC susceptibility data at different frequencies. The in-phase component χ′(T) exhibits the behavior expected of spin glasses, i.e. a shift of the cusp to higher temperatures for higher frequencies.     

Structural, electronic and magnetic properties of Cr-doped (ZnTe)12 clusters

We have studied the energetics and magnetism in Cr-doped (ZnTe)₁₂ clusters by first principles density functional calculations. Total energy calculations suggest that it is energetically most favourable for Cr atoms to substitute at Zn sites. Both ferromagnetic and anti-ferromagnetic coupling between the Cr atoms exist depending on the Cr-Cr distance in the clusters. The magnetic exchange coupling between Cr atoms is short-ranged.     

Structural and Magnetic Properties of Fe-Doped Anatase TiO2 Films Annealed in Vacuum

Structural and magnetic properties of Fe-doped anatase TiO2 films fabricated by sol-gel spin coating are investigated. X-ray diffraction measurements reveal that Fe^3＋ ions are incorporated into the TiO2 lattice. No ferromagnetism-related secondary phases and magnetic nanopaxticles are observed in the films. The presence of electron paramagnetic resonance signals at 9- 2.0 supports oxygen vacancies and/or defects generated in the films after annealing in vacuum. Magnetic measurements indicate that Fe-doped anatase TiO2 films are ferromagnetic at room temperature. These observations suggest that oxygen vacancies and/or defects axe energetically favorable for the long range Fe^3＋-Fe^3＋ ferromagnetic coupling in Fe-doped anatase TiO2 films.