共查询到19条相似文献,搜索用时 93 毫秒
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光刻胶灰化工艺与深亚微米线条的制作 总被引:4,自引:1,他引:4
随着器件尺寸的缩小,细线条的制作成为很关键的工艺,普通光学光刻已接近其分辨率的极限,而电子束光刻和X射线光刻技术复杂、费用昂贵。本文对光刻胶灰化工艺进行了分析和研究,并应用此工艺进行了深亚微米线条的制作,在普通光学光刻机上制作出宽度小于0.25μm细线条。我们已将此工艺成功地应用在深亚微米MOSFET的制作中。 相似文献
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介绍了光刻胶涂胶过程中对涂胶厚度均匀性的影响因素及发生均匀性问题的成因。对光刻工艺和光刻胶进行概述,通过对光刻工艺和光刻胶的涂胶学习可发现随着光刻工艺的不断进步,对光刻胶涂胶胶厚均匀性要求也在不断地提升,在实际的生产过程中却经常会出现涂胶均匀性较差而无法满足工艺要求。重点针对光刻胶涂胶厚度均匀性影响因素进行探究,详细介绍了会对其产生影响的因素。通过有效地管控好这些影响因素能够确保涂胶厚度均匀性,提升曝光质量,从而推动光刻技术的发展。 相似文献
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在半导体制造中,光刻胶是重要的原材料之一,本文从转速与膜厚,感光灵敏度,图形变化差等方面对ORM-85光刻胶进行了研究,得出了用于大生产的一套工艺,解决了接触式曝光方式粘版的问题及提高了产能。 相似文献
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采用AZ1500光刻胶作为掩模对GaAs和InP进行ICP刻蚀,研究了刻蚀参数对光刻胶掩模及刻蚀图形侧壁的影响。结果表明,光刻胶的碳化变性与等离子体的轰击相关,压强、ICP功率和RF功率的增加以及Cl2比例的减小都会加速光刻胶的碳化变性,Cl2/Ar比Cl2/BCl3更易使光刻胶发生变性。对于GaAs样品刻蚀,刻蚀气体中Cl2含量越高,刻蚀图形侧壁的横向刻蚀越严重。Cl2/BCl3对GaAs的刻蚀速率比Cl2/Ar慢,但刻蚀后样品的表面粗糙度比Cl2/Ar小。刻蚀InP时的刻蚀速率比GaAs样品慢,且存在图形侧壁倾斜现象。该工作有助于推动在器件制备工艺中以光刻胶作为掩模进行ICP刻蚀,从而提高器件制备效率。 相似文献
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深紫外光刻投影物镜是光刻机的核心部件,然而无论是照明光场偏振态的空间分布,还是光刻投影物镜自身的偏振像差都将改变光束的紧聚焦特性,对成像质量造成不可忽略的影响。基于三维琼斯矩阵,把偏振像差函数推广到三维空间,建立了三维相干光场中偏振像差的评价方法,并分析了典型的偏振敏感光学系统深紫外光刻投影物镜的三维偏振像差,详细阐述了其物理意义。研究发现:三维偏振像差函数的光瞳分布与视场、光学薄膜以及光学系统的自身结构密切相关。深入讨论了光学薄膜及偏振效应对光刻投影物镜成像质量的影响,进一步研究了照明光场的偏振态分布与光学系统波像差的关系,研究表明:光学薄膜引入的附加位相将导致光刻投影物镜的像质明显下降,而采用径向矢量光场照明可以改善成像质量。 相似文献
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We demonstrate that the use of a single SiO2 film, with thickness corresponding to one standing wave (SW) period allows the recording of deep photoresist structures on silicon substrates by laser interference, without use of any additional antireflecting coating. This condition corresponds just to the opposite thickness (half SW period) previously proposed for using the SiO2 films for phase-shifting the SW pattern. Theoretical and experimental results demonstrated that for the lithography of deep structures, the contrast of the SW pattern, the minimum light intensity of the SW pattern and the photoresist adhesion are the most important parameters of the process. 相似文献
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光刻胶经过曝光、显影后的锥角(Taper)和关键尺寸(Develop Inspection Critical Dimension,DICD)是光刻工艺的重要参数。明确影响锥角和DICD的工艺参数,进而控制锥角和DICD,这对工艺制程至关重要。本文结合光刻制程,探究了光刻胶厚度、曝光剂量、Z值、显影时间对锥角和DICD的影响,并结合蒙特卡罗算法对显影制程进行评估。实验结果表明:光刻胶厚度每增加1μm,DICD增加约2.6μm。同时,厚度增加会导致光刻胶顶部的锥角逐渐由锐角向钝角演变。曝光剂量每增加10mJ/s,DICD则减小约0.8μm,锥角则呈阈值跳跃式上升趋势。基板在最佳焦平面曝光,DICD和锥角均一性最好。显影时间每增加10s,DICD下降约0.3m,锥角则增加约1.7°。最终,DICD和锥角呈负相关关系,可以通过调节光刻工艺参数对锥角和DICD进行控制。 相似文献
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采用脉冲直流溅射的方式沉积IGZO膜层作为底栅结构TFT的有源层,并在背沟道上涂覆不同类型的光刻胶作为保护层,探讨不同保护层对器件电学特性的影响。经考察发现:采用光刻胶作为保护层时,保护层制作后短期内可维持器件的电学特性基本不变;但涂胶后暴露在空气中一定时间后,器件的电学特性开始衰退,尤其是阈值电压变化较明显,器件工作模式由增强型变为耗尽型,并推断光刻胶中溶剂接触到背沟道中IGZO,其化学反应导致沟道中氧脱附,载流子浓度增加。实验还发现:使用SU-8负性光刻胶作为保护层的器件,其电学特性衰退较小,在空气中放置一段时间后表现最稳定。 相似文献
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针对工程应用中单脉冲雷达差斜率简便测试问题,提出了一种正弦波单脉冲差斜率测试方法。推导了将非相参的正弦波信号用于差斜率测试的公式,并将正弦波信号直接用于单脉冲给差斜率测试系统,实现对单脉冲雷达系统参数的快速校正。仿真结果表明,经过该方法校正的单脉冲雷达系统可实现优于0.01的测角精度。该测试方法能够实现高精度的系统测试性能,对解决工程应用中的测试校正问题具有实际指导意义。 相似文献
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J. Linden Ch. Thanner S. WolffB. Lägel E. Oesterschulze 《Microelectronic Engineering》2011,88(8):2030-2032
Spray coating of polymethylmethacrylate (PMMA) as electron beam resist on non planar surfaces is presented as a reliable technique for deposition of uniform resist layers with adjustable thickness at wafer scale. In the experiments a commercial spray coating system with an ultrasonic spray nozzle was used. Parameters which influence the quality of the resist layer with respect to uniformity across a 4 in Si wafer, such as ultrasonic power and dispensed volume, were evaluated. The suitability of spray coated PMMA for the pattern transfer on surfaces with high topography was proven by PMMA spray coating of 8 μm deep trenches etched into Si wafers. The PMMA was then electron beam exposed and chromium line patterns were transferred on the Si surface via a lift-off process. 相似文献
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Wenbo Jiang Song HuChangqing Xie Xiaoli ZhuLixin Zhao Weicheng Xie Jun Wang Xiucheng Dong 《Microelectronic Engineering》2011,88(10):3178-3181
In this paper, a new hybrid method to fabricate submicron photon sieve is proposed, where the E-beam lithography and the X-ray lithography are used. It is found that 2.8 μm thickness of the polyimide film, 400 nm thickness of the ZEP-520 and 280 μC/cm2 exposure dose are good for E-beam lithography, while 500 nm thickness of the PMMA and 30 s developing time are good for X-ray lithography. We have successfully fabricated the photon sieve with these parameters (the diameter of photon sieve: 250 μm, the focal length: 150 μm, the diameter of the outmost pinhole: 420 nm). Some key techniques of this method are analyzed respectively, and the error analysis are done at the end of this paper. It provides a direction of nanoscale optical element fabrication with higher resolution and lower cost. 相似文献
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Maryna Lishchynska Victor Bourenkov Lianne Doeswijk James C. Greer 《Microelectronic Engineering》2007,84(1):42-53
One of the ultimate tasks for stencil lithography is the ability to fabricate arrays of structures with controlled dimensions on the nanometer scale precisely positioned on a suitable surface. The race to shrink feature sizes requires the limits of conventional lithography to be extended to high-throughput, low cost, reliable and well-controlled processes of which stencilling is a promising candidate for nanoscale applications. Identifying, predicting and overcoming issues accompanying nanostencil lithography is critical to the successful and timely development of this technique for a wide range of potential applications. This paper addresses phenomena associated with stencil nanopatterning and presents the results of modelling and simulation studies for predicting the deleterious effects of mask distortion and clogging during pattern transfer. It is shown that degrading effects of stress-induced deformation of stencils can be dealt with via optimal design of corrugation structures which in turn reduce stencil deformation and significantly improves pattern definition. Modelling results are validated by comparison to experiment. The corrugation structures can be used to define practical design rules for fabrication of stable large area (“full scale”) purpose-designed stencil membranes. The accurate modelling of the clogging phenomenon combined with gradually evolving stencil deformation, also presented in the paper, can be used for prediction of pattern distortion, to calculate maximum thickness of a deposited layer and/or for prediction of the stencil lifetime. 相似文献