Behavior of rigid-porous layers at high levels of continuous acoustic excitation: theory and experiment

A model for the propagation of high amplitude continuous sound through hard-backed rigid-porous layers has been developed which allows for Forchheimer's correction to Darcy's law. The nonlinearity associated with this is shown to be particularly important in the range of frequencies around layer resonance. The model is based on the introduction of particle velocity dependent flow resistivity into the equivalent fluid model expression for complex tortuosity. Thermal effects are accounted for by means of a linear complex compressibility function. The model has been used to derive analytical expressions for surface impedance and reflection coefficient as a function of incident pressure amplitude. Depending on the material parameters, sample thickness, and frequency range the model predicts either growth or decrease of reflection coefficient with sound amplitude. Good agreement between model predictions and data for three rigid-porous materials is demonstrated.     

Lattice dynamics of MgO at high pressure: theory and experiment

The longitudinal acoustic and optical phonon branches along the Gamma-X direction of MgO at 35 GPa have been determined by inelastic x-ray scattering using synchrotron radiation and a diamond-anvil cell. The experimentally observed phonon branches are in remarkable agreement with ab initio lattice dynamics results. The derived thermodynamic properties, such as the specific heat CV and the entropy S are in very good accord with values obtained from a thermodynamically assessed data set involving measured data on molar volume, heat capacity at constant pressure, bulk modulus and thermal expansion.     

Disappearance of exciton reflection in ZnO at high excitation levels

Reflection spectra of ZnO at 77K have been recorded in the exciton region by means of a dye laser with intensities between 5kW/cm² and 5MW/cm². The exciton structure in the spectra gradually vanishes at higher laser intensities. While the exciton damping only increases about 25% the oscillator strength and/or the background dielectric constant may change up to a factor of 2. These results are interpreted in terms of formation of an electron-hole plasma or liquid.     

Pressure-induced phase transition and structural behavior of MgO at high temperatures: a model study

A realistic interaction potential model approach by including temperature effects is developed to study phase transition, elastic properties and thermo-physical properties at very high pressures and temperatures. This approach is effectively able to explain the inter-atomic interaction involved at high temperature and high pressure as it includes the three-body interactions. Earlier works overlooked the three-body interactions at high temperature and pressures. Moreover, the phase-transition pressures of MgO crystal at high temperatures including the three-body interaction are computed for the first time. Elastic behavior, anisotropic factor and Debye temperature of MgO at high pressures and temperatures are also reported.     

Q factor of lithium niobate piezoelectric transducers at high excitation levels

The variations of the electroacoustic parameters (Q factor, electromechanical coupling coefficient, and capacitance) of lithium niobate piezoelectric transducers with increasing high-frequency excitation voltage are studied experimentally. The relative acoustic strain is found to reach a maximum of about 10^?4 in the frequency range from 2 to 3 MHz. The Q factor of the transducers may increase by 100% in the range of acoustic strains studied. This increase is accompanied with acoustic emission. The reason for this effect is the block structure of the lithium niobate crystal.     

Electron excitation of neutral and ionic levels in Townsend discharges of argon at high E/N

We have measured the emission coefficients of the 3p levels of ArI: 3p₁, 3p₅, 3p₆, 3p₇, 3p₈, and 3p₁₀. The data for the 3p₅, 3p₆, 3p₇, 3p₈ and 3p₁₀ levels were converted to excitation coefficients by using quenching coefficients from the literature. Measurements were performed in the range of E/N between to above except for the 3p₇ level where measurements were done only up to . The data for the emission coefficients for Ar II levels include two 4p' levels with terms ² P ⁰ _1/2 and ² F ⁰ _7/2, and three 4p levels with terms ² P ⁰ _1/2, ⁴ P ⁰ _5/2 and ² D ⁰ _5/2. The measurements for the ionic levels were done for E/N above up to nearly . The absolute values of the coefficients were obtained from the intensity of the light emitted at the anode in the parallel plate self-sustained Townsend argon discharges. For low E/N the apparent emission coefficients (i.e. the normalized spatial profile of emission) for both neutral and ionic levels increase exponentially in almost the entire discharge gap. At about the exponentially increasing signal was obtained only near the anode, while at the spatial dependence was flat throughout the electrode gap. Received: 18 January 1999 / Received in final form: 12 April 1999     

Diffusion of excitons in CdS-Se and ZnSe-Te solid solutions at high excitation levels

It is shown that, with strong pulsed excitation, the intensity of the exciton recombination band in the fluctuation tail of the density of states in the limit of large times in the presence of traps is described by the asymptote of a solution to the diffusion equation. The critical diffusion index corresponds to a “normal” process in the CdS-Se solid solution and to “anomalous” diffusion in the case of ZnSe-Te. Fiz. Tverd. Tela (St. Petersburg) 40, 892–893 (May 1998)     

Amplified luminescence in InGaAs/AlGaAs laser diode arrays at high pump levels

The development of amplified luminescence fluxes in powerful InGaAs/AlGaAs laser diode arrays (lasing wavelength 940–960 nm) has been studied experimentally and theoretically at pump levels above the threshold value. Flux density values for amplified luminescence propagation along (1.88⋅10⁹ W/m²) and across (1.21⋅10⁹ W/m²) the laser diode array cavity axis have been evaluated for the threshold pump level at room temperature (293 K). The contribution of the recombination rate induced by the amplified luminescence to the threshold current generation of the laser diode array reaches 7%. It has been shown that the amplified luminescence flux density is increased by 49% as the pump level rises from one to three threshold values.     

Edge cathode luminescence of zinc-selenide single crystals at high levels of excitation

Investigating cathode-luminescence spectra over a broad range of temperature at high levels of excitation (G 10²⁷ cm^–3 · sec^–1) permits the establishment of the experimental conditions for the observation of a multiplasmon structure in studying electron-hole plasma of zinc-selenide single crystals.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 69–73, July, 1989.     

Optical control of the coherent dynamics of a bismuth lattice at liquid-helium temperature at low and high excitation levels

The fully symmetric A_1g phonons of bismuth have been investigated at liquid-helium temperature by the coherent control method for various crystal excitation levels. It has been found that large-amplitude coherent phonons exhibit the “rigidity” of the phase, which is absent at a small amplitude. The impossibility of changing the phase of phonon oscillations appears at the excitation levels at which their amplitude relaxation law changes from exponential to power. The modification of the phase properties and relaxation law of the excitations of the crystal lattice can be understood in terms of the concept of the condensation of phonons, which occurs with an increase in the crystal excitation level.     

F+ centre generation in MgO crystals at high density of excitation by accelerated electrons of subthreshold energy

Optical absorption spectra and the angular distribution of annihilated positrons in MgO crystals irradiated by subtreshold superdense electron pulses are measured. The experimental results obtained show the effective contribution of the creation mechanism of non-impact radiation defects in MgO crystals at the highest electron irradiation densities.     

Anomalies of the photo-response and thermal boundary resistance of a YBaCuO/YSZ structure

The photoresponse of a YBaCuO/ZrO₂ bolometric structure was measured under modulated (λ = 630 nm) and pulsed (τ ≈ 7 – 8 ns; λ = 337 nm) laser excitation. The shape of the measured photoresponse was interpreted by a thermal model; nevertheless, the pulse amplitude for vanishing YBaCuO film resistance was 5–6 times greater than predicted; the thermal boundary resistance R_Bd between YBaCuO and YSZ was evaluated ? 10^?2 K × cm²/Watt, which is considerably larger than estimated theoretically for the similar situation of YBaCuO/MgO [5].     

Luminescence of rare gas crystals at high excitation densities for VUV laser applications

Exciton densities of the order of 10¹⁸ cm^–3 are generated in 0.1–0.3 mm thick surface layers in an area of 10×20 mm² of optically clear rare gas crystals. The quantum efficiencies at 126 nm (Ar), 145 nm (Kr), and 172 nm (Xe) remain near 0.5 even for the highest excitation densities. The corresponding gain coefficients of 2.6 cm^–1 (Ar) to 18 cm^–1 (Xe) exceed those of high pressure gas lasers by a factor of 20. Stimulated emission is inferred by observing the line narrowing, the dependence of intensities and time courses on excitation density and amplification measurements. The net gain coefficient is reduced however to 0.5–1 cm^–1 by transient absorption of excited centers and scattering by irradiation induced defects. The results are analysed by a system of rate equations for the excitation, relaxation, quenching, and amplification processes. A peculiar temperature dependence of the quantum efficiencies and time courses is attributed to electron trapping at grain boundaries.     

Relaxation processes at high excitation levels and Bose-Einstein condensation of excitons in ZnTe crystals

The singularities of low-temperature emission spectra obtained for ZnTe crystals excited resonantly by a strongly monochromatic source are investigated. The possibility of attaining the coherent luminescent emission due to the exciton-exciton interaction under these conditions is proved. The appearance of the non-polarized needle-like peak and the processes of inelastic interaction of polaritons of the upper polariton branch (UPB) as well as the disappearance of the Raman component are interpreted as the spectral attributes of Bose-Einstein condensation of UPB polaritons.     

Near band-edge luminescence of semi-insulating undoped gallium arsenide at high levels of excitation

The dependences of the maximum and the half-width of near band-edge photoluminescence of semi-insulating undoped-GaAs crystals at 77 K on the concentration of background acceptor impurities and the level of excitation in the range from 3×10²¹ to 6×10²² quantum/(cm² s) are investigated. The observed dependences are explained by formation of the density tails of states as a result of fluctuations of impurity concentration and participation of localized states of the donor impurity band in radiative transitions. Reduction of many-particle interaction at increasing of N can be connected with increasing of shielding of charge carriers by atoms of impurity.     

Resonant laser excitation and electron-hole kinetics of a semiconductor: II. Nonlinear particle transport and field propagation

Starting from the initial equations derived in a previous paper for an electron-hole plasma in a semiconductor resonantly excited in the interband absorption region by a monochromatic laser, the collision integrals of the Boltzmann equations for the quasiparticles as well as the nonlinearly defined optical functions are discussed in detail and related to each other. Explicit results are presented for the limiting case of linear absorption as well as for a stationary and homogeneous situation and compared with previous results in the literature. Especially for the latter case it is shown that it cannot provide a consistent understanding of the underlying physics and that consideration of inhomogeneous behaviour is essential.