Theoretical and experimental study of V–I characteristics of UV pre-ionized TEA CO2 laser for variety of laser gas mixtures

Experimental and theoretical study of V–I characteristics of UV pre-ionized TEA CO₂ laser has been carried out for a variety of gas mixtures emitting different optical pulse shapes suitable for various applications. Coupled differential equations have been solved to model the pulse excitation circuit using the numerically calculated values of ionization coefficient (α), attachment coefficient (β) and drift velocity (U_d) as functions of E/N (i.e. electric field to neutral particle density ratio) for chosen gas mixture. Calculated and experimental V–I characteristics for gas mixtures (CO₂:N₂:He::1:2:3, 1:1:4, 1:1:5 and 1:0:4.7) show a good agreement. It has been shown that gas mixture has a dominant effect on the delay between pre-ionization and main discharge; thus, determining the long-term stability of discharge. The excitation pulse duration increases with increase in molecular content of gas mixture (i.e. amount of CO₂ and N₂ in gas mixture).     

Design of multiple layered a-Si:H(F)/a-SiGex:H(F) films for enhancement in photoresponse in the near-infrared spectrum

Photo-electric properties of a-Si:H(F)/a-SiGe_x:H(F) multilayer films were investigated by measurements of optical absorption, and photoconductivity in both steady and transient modes with the repetition length and the difference in the optical gap between a-Si:H(F) and a-SiGe_x:H(F) as the variables. Measurements of primary photocurrent clarified that photosensitivity for the multilayer films extended to longer wavelengths of around 725 nm, while high resistivity was maintained despite of lowering the band gap.The drift mobility of electrons was measured by the time-of-flight technique, showing 10^–2-10^–3 cm²/Vs, while the drift mobility-lifetime products of electron was maintained to be 10^–7 cm²/V. On the other hand, the drift mobility of holes was 10^–3 cm²/Vs, which was the similar magnitude to that of a-Si:H(F).     

Dispersive optical constants of a-Se100−xSbx films

Thin films of amorphous Se_100−xSb_x (x=5,10 and 20 at%) system are deposited on a silicon substrate at room temperature (300 K) by thermal evaporation technique. The optical constant such as refractive index (n) has been determined by a method based on the envelope curves of the optical transmission spectrum at normal incidence by a Swanpoel method. The oscillator energy (E_o), dispersion energy (E_d) and other parameters have been determined by the Wemple–DiDomenico method. The absorption coefficient (α) has been determined from the reflectivity and transmitivity spectrum in the range 300–2500 nm. The optical-absorption data indicate that the absorption mechanism is a non-direct transition. We found that the optical band gap, E_g^opt, decreases from 1.66±0.01 to 1.35±0.01 eV with increase Sb content.     

High-power end-pumped CW Nd:GdVO4 laser formed with a flat–flat cavity

Formed with a flat–flat resonator, a diode-laser-array end-pumped CW Nd:GdVO₄ laser at 1.06 μm, capable of generating 8.6 W of TEM₀₀ output power with optical conversion efficiency of 43% and slope efficiency of 48%, has been developed. The laser beam was nearly diffraction limited, with the beam quality factor measured to be M²=1.22. Under the conditions of multi-mode operation, the laser was able to produce 11.2 W of low-order transverse mode radiation (M²<2) at the incident pump power of 22 W, giving an optical conversion efficiency of 51%, and a slope efficiency of 55%.     

Assignments of optically pumped CD3OH laser lines

Six FIR laser lines from CD₃OH pumped by the 10R(36) and the 10R(18) CO₂ laser lines are assigned to specific rotational energy levels in the excited C–0 stretch state. It is found that their upper laser levels are shifted by a Fermi resonance between the C–0 stretch vibration and the third and forth harmonics of the torsional mode. The Fermi resonance shifts are +0.332 cm^–1 and +2.251 cm^–1 for the upper laser levels pumped by the 10R(36) and the 10R(18) CO₂ laser lines, respectively. Calculated frequencies of the pump and the laser transitions agree with those of the pump CO₂ laser lines and the observed FIR laser lines within estimated accuracy.     

The 2D {P} Spin-Echo-Difference Constant-Time [C, H]-HMQC Experiment for Simultaneous Determination of JH3′P and JC4′P in C-Labeled Nucleic Acids and Their Protein Complexes

A two-dimensional {³¹P} spin-echo-difference constant-time [¹³C, ¹H]-HMQC experiment (2D {³¹P}-sedct-[¹³C, ¹H]-HMQC) is introduced for measurements of ³J_C4′P and ³J_H3′P scalar couplings in large ¹³C-labeled nucleic acids and in DNA–protein complexes. This experiment makes use of the fact that ¹H–¹³C multiple-quantum coherences in macromolecules relax more slowly than the corresponding ¹³C single-quantum coherences. ³J_C4′P and ³J_H3′P are related via Karplus-type functions with the phosphodiester torsion angles β and ε, respectively, and their experimental assessment therefore contributes to further improved quality of NMR solution structures. Data are presented for a uniformly ¹³C, ¹⁵N-labeled 14-base-pair DNA duplex, both free in solution and in a 17-kDa protein–DNA complex.     

Influence of thickness on the optical properties of vacuum-deposited a-Si:H films

The influence of the thickness of the a-Si : H film on its optical properties was studied using spectrophotometric measurements of the film transmittance and reflectance in the wavelength range 200–3000 nm. Both the refractive index and the absorption coefficient were found to increase as the film thickness increased and the absorption edge shifted to lower energies. Both the optical energy gap, E_g, and Urbach parameter values, E₀, decreased with increasing thickness. This decrease in E_g and E₀ was slow for thicknesses above 400 nm.     

Structural and optical properties of thermally evaporated thin films

Chalcogenide glass Se₅₅Ge₃₀As₁₅ have amorphous structure in both as-deposited and annealed conditions. The optical properties of the as-deposited and annealed films were studied using spectrophotometric measurements of transmittance, T(λ), and reflectance, R(λ), at normal incidence of light in the wavelength range 200–2500 nm. Neither annealing temperature nor film thickness can influence spectral response on refractive index and absorption index of films. The type of electronic transition responsible for optical properties is indirectly allowed transition with energy gap of 1.94 eV and phonon energy of 40 meV. The dispersion of the refractive index is discussed in terms of the single oscillator Wemple–Didomenico (WD) model. The width of band tails of localized states into the gap (ΔE), the single oscillator energy (E_o), the dispersion energy (E_d), the optical dielectric constant (ε_∞), the lattice dielectric constant (ε_L), the plasma frequency (ω_p) and the free charge carrier concentration (N) were estimated.     

Laser-induced spark for simultaneous ignition and fuel-to-air ratio measurements

This work investigates the use of laser-induced gas breakdown for simultaneously igniting and measuring fuel-to-air ratio of CH₄–air and H₂–air combustible mixtures. The fuel-to-air ratio is determined using the measured spectral peak ratio I_o,Hα/I_o,OI. Sparks are produced using a single-mode, Q-switched Nd–YAG laser. The laser produces a beam of 6 mm in diameter at the wavelength of 1064 nm and pulse duration of 5.5 ns. The beam optics is designed to have mainly a beam splitter and a focusing lens. The beam splitter is coated to reflect the laser beam and transmit emission lines with wavelengths from 600 to 900 nm which are then collected by a fiberoptic cable and detected by an imaging spectrometer–detector assembly. The results showed a linear dependence of the spectral peak ratio on the equivalence ratio that can be generally expressed by φ=a(I_o,Hα/I_o,OI)+b, where a and b are the parameters that depend on the gas pressure. Using the least-square curve fitting technique to fit the experimental data, a calibration curve for calculating the equivalence ratio as a function of the ratio of (I_o,Hα/I_o,OI) was generated.     

Macroscopic and microscopic parameters of laser dye solvents: m-xylene and dioxane

For the laser designer and other users the optical, electrical and refractive parameters have been obtained for pure nonpolar laser dye solvents m-xylene and dioxane. The refractive index (n) and its thermo-optic constant (dn/dT) at argon laser wavelength 514.5 nm and He–Ne laser wavelength 632.8 nm, are measured. The values of n and dn/dT are used to calculate the optical permittivity ε=n² and its variation with temperature dε/dT. Applying Cauchy's equation the optical and dielectric dispersion (dn/dλ and dε/dλ) are determined. The variation of −dn/dT, −dε/dT, molar refractivity and thermal volume expansion coefficient as a function of wavelength are calculated and represented. Furthermore Cauchy's constants A and B as a function of temperature are plotted. The specific and molar refractivities, specific and molar dispersivity total polarizability, distortion polarizability, ratio of atomic to electronic polarizability, molecular radius, relaxation time, electric susceptibility characteristic impedance, and other physical parameters were calculated. Additionally, density, thermal linear expansion coefficient and molar polarization as a function of temperature were calculated at the laser wavelengths 514.5 nm.     

Short single-mode CO2 laser pulse generation by pulsed Q-switching

A simple method for the generation of short, single-mode CO₂ laser pulses produced by applying two voltage gates (of amplitude 3U_λ/4 and U_λ/4) to an electro-optic Q-switch placed in a three-mirror cavity is proposed. Single, single-mode, well-synchronizable pulses of 3 ns duration and of 3 mJ energy have been experimentally achieved from a TEA CO₂ laser with an intracavity Pockels cell with 3 ns switching time. Using a numerical simulation it is shown that with shorter switching time (≈1 ns) the method enables one to obtain, from such a laser, a single, megawatt pulse of 1 ns duration.     

R branch tuning characteristics of the13CH3F Raman FIR laser

Summary We described a¹³CH₃F Raman laser pumped by a grating tuned 20 atmospheres CO₂ laser. The emission characteristics of the¹³CH₃F laser extends from 14 cm^–1–35 cm^–1 and from 49 cm^–1–72 cm^–1; about 65% of these frequency ranges can be covered with tunable radiation. The characteristics shows a strong dependence on the rotaional quantum numbers of the states involved in the Raman laser transitions and, within each tuning interval, on the frequency offset with respect to the frequencies of resonant transitions. We obtained, at 51 cm^–1, a maximum FIR laser pulse energy of about 800 J (at a pump energy of 200 mJ), corresponding to a photon conversion of about 8%. In some cases we have observed simultaneous emission at a Raman and a cascade frequency. In addition, FIR emission power dependence on¹³CH₃F gas pressure and pump pulse power were investigated for different J quantum numbers.     

Understanding of a-Si:H(p)/c-Si(n) heterojunction solar cell through analysis of cells with point-contacted p/n junction

We fabricated point-contacted a-Si:H(p)/c-Si(n) heterojunction solar cells using patterned SiO₂ and investigated their electrical properties using the light current–voltage (I–V) curve and Suns-V_oc measurements. The light I–V curves showed bias-dependent changes according to the applied voltage in the point-contacted cells, especially in the samples with a long distance between the point-contacted junctions. The Suns-V_oc measurements showed that the bias-dependence of the light I–V curves did not originate from the recombination in the SiO₂/Si or a-Si:H(p)/c-Si(n) interface, but from the series resistances. It is possible to explain the bias-dependent light I–V curve in terms of the conductivity of a-Si:H(p) and difference in the electrical contact properties between a-Si:H(p), ZnO and c-Si(n). These results mean that the electrical properties of the a-Si:H(p) layer and the contact properties with this layer are also critical to obtain a high J_sc and fill factor in n-type based Si heterojunction solar cells.     

Large nonlinear optical properties of Fe2O3 nanoparticles

Nonlinear optical properties of Fe₂O₃ nanoparticles were investigated by the signal-beam Z-scan technique with Ar⁺ and Ne–He lasers. The largest reported effective nonlinear coefficient, n₂=−8.07×10⁻⁷ cm²/W, was obtained. It is demonstrated that the nonlinear optical response originals from quantum confinement effect.     

Effect of buffer gas on the generation of eye-safe 1.54 μm radiation using the stimulated Raman scattering technique in CH4

Experimental results on the generation of 1.54 μm eye-safe radiation in pure CH₄, CH₄:He and CH₄:Ar mixtures pumped by the fundamental of an Nd:YAG laser, using the stimulated Raman scattering (SRS) technique, are described. A decrease in the energy conversion efficiency and degradation in the beam quality of S₁ was observed in pure CH₄ at high pump energies. This problem was overcome in CH₄:He and CH₄:Ar mixtures. Compared with the first Stokes (1.54 μm) energy conversion efficiency in pure CH₄, at a pump energy of 126 mJ, an enhancement of 50% in energy conversion efficiency was observed in the CH₄:Ar mixture (60% argon concentration) and as much as 100% in the CH₄:He mixture (60% helium concentration). The use of these buffer gas mixtures improved the spatial beam quality of the Stokes radiation considerably and also resulted in raising the pump threshold for optical breakdown of the Raman gain medium.     

Characterization of a a-Si:H thin-film transistors and the effect of thermal annealing

An analysis of characteristics of a-Si:H thin-film transistors were performed. The mobility of electrons in the accumulation layer induced by a gate voltage was in a order of 0.5 cm²/V · s at a field strength lower than 1×10⁴V/cm, and proportional toE ^–r at higher electric field, wherer was 0–0.2.The effect of thermal annealing at the temperatures 100–160°C on the parametersV _T andr are discussed. The activation energies for the variation of both parameters were 0.31 eV and 0.33 eV, respectively, that suggests the mechanism influencing both parameters may be the same. The mechanism is discussed in relation to the carrier hopping through the network of localized states.     

Determination of absorption length of CO2 and high power diode laser radiation for ordinary Portland cement and its influence on the depth of melting

The laser beam absorption lengths of CO₂ and a high power diode laser (HPDL) radiation for concrete have been determined. By employing Beer–Lambert’s law the absorption lengths for concrete of CO₂ and a HPDL radiation were 470±22 μm and 177±15 μm, respectively. Indeed, this was borne out somewhat from a cross-sectional analysis of the melt region produced by both lasers which showed melting occurred to a greater depth when the CO₂ laser was used.     

Efficient laser isotope separation of 13C using novel linear multi-pass cavity

¹³C isotope has been separated in the form of enriched product C₂F₄ by selective multi-photon dissociation (MPD) of Freon-22 (CHClF₂) using the 9P(26) laser line of a transversely excited atmospheric CO₂ laser. The non-linearity factor, γ, that determines the dependence of the yield of ¹³C isotope on the fluence (J/cm²) has been determined for various laser rotational lines (9P(20)–9P(26)) and the advantage of a lower γ in the case of 9P(26) is highlighted for macroscopic production of ¹³C isotope. It is also shown that a higher value of the optimum fluence at 9P(26) not only results in a higher enrichment efficiency but in a relatively lower value of γ also. The laser pulse energy is efficiently utilized for selective MPD of Freon-22 by focusing the pulse energy repeatedly with the help of a novel linear multi-pass cavity (LMPC). The novelty of this optical arrangement lies in its ability to maintain the laser fluence around an optimum value for a desired enrichment of ¹³C in the product. This also ensures a higher quantity of enriched product because of the higher reaction volume. The advantage of the LMPC over the conventionally used Herriott multi-pass cell has also been presented. The gain in reaction volume in the present optical cavity having 20 passes with a constant fluence in each pass is as high as 12. Isotope-selective MPD of Freon in a LMPC with constant fluence in each pass showed a distinct advantage in energy utilization to separate ¹³C isotope over the gradually reducing fluence case.This revised version was published online in August 2005 with a corrected cover date.     

ArF laser CVD of hydrogenated amorphous silicon: The role of buffer gases

ArF laser-induced CVD has been employed to generate hydrogenated amorphous silicon (a-Si:H) from Si₂H₆ gas dilute with He, Ar, or H₂. The formation of amorphous films or powder is found to depend critically on the kind of buffer gas, the stationary total and partial gas pressures, and the substrate temperature. These dependences have been investigated in the 1–5 Torr pressure and 100–400 °C temperature ranges. They are semiquantitatively discussed in terms of ArF laser photolysis of disilane, gas heating by heat flow from the substrate and laser irradiation, diffusion, and gas phase polymerization. Furthermore, photo ionization has been observed but found irrelevant for the a-Si:H layer properties. The photo and dark conductivities ( _ph, _d) of the semiconductor layers are determined by the substrate temperature. The _ph values range between 10^–7 and 10^{–4 –1} cm^–1 and the _d values between 10^–11 and 10^{–8 –1} cm^–1. The maximum ratio _ph/ _d amounts to 4×10⁴. The layers are further characterized by their optical band gap and activation energy. The layer properties are compared to literature values of amorphous films prepared by various photo, HOMO, and plasma CVD methods.     

Microstructures of patterned nc-Si superlattices made by pulsed laser interference crystallization

We employed atomic force microscopy, cross-section transmission electron microscopy and high-resolution electron microscopy to investigate the microstructures and surface morphology of laser interference crystallized a-Si : H/a-SiN_x : H superlattices. The experimental results show that Si nanocrystallites (nc-Si) are formed within the initial a-Si : H sublayers and are patterned in certain regions with the same periodicity of 2.0 μ m as the phase-shifting mask grating. The size of nc-Si is limited by adjacent a-SiN _x: H sublayers due to the constrained crystallization effect so it is possible to use this crystallization method to get a three-dimensional ordered nc-Si array.