Dislocations in GaAs single crystals grown by the Czochralski method

The influence was studied of growth conditions on the dislocation density in gallium arsenide single crystals grown by the Czochralski method from a gallium-enriched melt. Etching in a solution of 1 part cone. HNO₃ and 2 parts H₂O served to determine the dislocation density across and along a single crystal. The dislocation density along the crystal was found to depend mainly on the angle of crystal diameter increase.     

Gamma-ray induced color centers in Yb:YAG crystals grown by Czochralski method

20 at.% Yb:YAG single crystals have been grown by the CZ method and gamma-ray irradiation induced color centers and valence change of Fe³⁺ and Y b³⁺ ions in Yb:YAG have been studied. One significant 255 nm absorption band was observed in as-grown crystals and was attributed to Fe³⁺ ions. Two additional absorption (AA) bands located at 255 nm and 345 nm, respectively, were produced after gamma irradiation. The changes in the AA spectra after gamma irradiation and air annealing are mainly related to the charge exchange of the Fe³⁺, Fe²⁺, oxygen vacancies and F-type color centers. Analysis shows that the broad AA band is associated with Fe²⁺ ions and F-type color centers. The transition Y b³⁺→Y b²⁺ takes place as an effect of recharging of one of the Y b³⁺ ions from a pair in the process of gamma irradiation.     

Radial distribution of iron in silicon crystals grown by Czochralski method from contaminated feedstock

The radial distribution of iron in Cz‐Si crystals grown from photovoltaic grade feedstock was analysed using deep level transient spectroscopy (DLTS). A high temperature annealing sequence followed by fast quenching to 273 K was used to transform iron silicide precipitates, formed after the crystal growth, to iron‐containing species detectable by DLTS. The results suggest a homogeneous radial distribution of iron over the crystal. From comparison of as‐grown and annealed samples, a strong suppression of iron precipitation close to the walls of the crystals becomes obvious and possible mechanisms of this phenomenon are discussed. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Oxygen in Ge crystals grown by the B2O3 encapsulated Czochralski method

Local vibrations of oxygen in Ge crystals grown by the Czochralski method adopting liquid-B₂O₃ encapsulation and GeO₂ powder doping were investigated by Fourier-transform infrared spectroscopy. Strong absorption peaks at 855 cm⁻¹, originating in local vibration of interstitially dissolved oxygen O_i as Ge–O_i–Ge quasi-molecules, developed depending on the doped amount of GeO₂. Similarly, an absorption peak related to the combined vibration of Ge–O_i–Ge was found at 1264 cm⁻¹ and the conversion factor from the peak intensity to the oxygen concentration was evaluated to be 1.15×10¹⁹ cm⁻². By prolonged annealing at 350 °C an absorption peak developed at 780 cm⁻¹, indicating formation of oxygen-related thermal donors. From the variations of carrier density and oxygen concentration, one donor was found to possess about 15 O_i atoms.     

Defects in electron irradiated GaP studied by positron lifetime spectroscopy

Defects induced by electron irradiation were investigated in GaP. The irradiation was performed at 15 K with an incident electron energy of 2 MeV and a fluence of 10¹⁸cm^–2. Annealing experiments were carried out in the temperature range between 100 and 1000 K.Ga and P vacancies were detected after electron irradiation and the different annealing behaviour of the two types of vacancies was observed. The recovery stage between 100 and 400 K was attributed to the annealing of Ga vacancies and the recovery at temperatures above 900 K to the annealing of P vacancies.We also performed Hall measurements to determine the location of the Fermi level in the bandgap during the annealing. Two different ionization levels of the P vacancy were found which can be attributed to the transitions V _P ⁺ /V _P ^o and V _P ^o /V _P ^– .Temperature-dependent measurements were performed to study the effect of shallow positron traps.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

Spinodal-like decomposition of InGaP epitaxial layers grown on GaP substrates

The spinodal-like decomposition of In_xGa_1−xP epitaxial layer prepared by low-pressure metallorganic vapour phase epitaxy was studied by means of photoluminescence and transmission electron microscopy. Epitaxial layers were grown on GaP substrates at T_g = 740 °C and reactor pressure of 20 mbar. We show that presence of spinodal-like decomposition occur at samples with InP mole fraction higher as x = 0.2 and V/III ratio of 75. The low-temperature photoluminescence spectra shows that in partially decomposed samples a characteristic broad band occurred close to 1.985 eV. An increase in the V/III ratio up to a value of 350 suppressed the decomposition, and PL signal with only one narrow transition was obtained.     

The cellular substructure of zinc single crystals prepared by the Czochralski method

The dependence of the size of cellular substructure on the rate of growth and the temperature gradient of metal single crystals grown from the melt by the Czochralski or Bridgmann method are the same. The dependence of the size of elongated cells are of the same type as in the case of cells. A hypothesis on the mechanism of production of elongated cells is proposed regarding the influence of orientation of single crystals.     

Flashlamp-pumped Ti:Sapphire laser with different rods grown by Czochralski and Verneuil methods

The design and the development of a flashlamp-pumped Ti:Sapphire laser is described. Design criteria are discussed and performance improvements using different types of fluorescent UV converters or filters, such as organic dyes or doped glass are presented. We have tested different laser rods at various Ti-concentrations obtained by Verneuil or Czochralski growth techniques. The maximum laser output energy of 540 mJ with a differential efficiency up to 1% was achieved by using only a pyrex filter surrounding the laser rod.Presented at LASERION '91, June 12–14, 1991, München (Germany)     

X-ray diffraction study of the effect of neutron irradiation on the defect formation in silicon crystals grown by the Czochralski method and annealed at high temperatures

The effect of x-ray scattering by neutron-irradiated and reference (unirradiated) silicon crystals grown by the Czochralski method and annealed at temperatures of 850–1050°C on the defect formation is comparatively investigated using triple-crystal x-ray diffractometry. The sizes and concentrations of clusters composed of point defects and dislocation loops formed during decomposition of an oxygen-containing solid solution and subsequent clusterization of the point defects are calculated.     

GaP材料热导率的测量

针对目前用于半导体材料掺杂浓度纵向深度分布测量用的方法，如Ｃ－Ｖ法、电化学法等方法对样品造成的损伤或污染，本文提出一种非接触式的光热法测量技术。并结合室温下光热法测得的实验数据计算了ＧａＰ∶Ｎ多层材料中不同杂质浓度下的热导率，获得热导率随半导体内掺入的杂质浓度增加而减小的关系。这一结果与现有用光热法测量单层结构的半导体材料得到的规律相符合，从而表明了用光热法对层状半导体材料进行掺杂浓度纵向分布测量的可行性；同时还讨论半导体内临近层间结晶程度的差异对光热信号幅度造成的影响。     

GaP layers grown on GaN with and without buffer layers

The growth of GaP layer on GaN with and without buffer layers by metal-organic chemical vapour deposition (MOCVD) has been studied. Results indicate that the GaP low temperature buffer layer can provide a high density of nucleation sites for high temperature (HT) GaP growth. These sites can promote the two-dimensional (2D) growth of HT GaP and reduce the surface roughness. A GaP single crystal layer grown at 680°C is obtained using a 40-nm thick GaP buffer layer. The full-width at half-maximum (FWHM) of the (111) plane of GaP layer, measured by DCXRD, is 560 arcsec. The GaP layer grown on GaN without low temperature GaP buffer layer shows a rougher surface. However, the FWHM of the (111) plane is 408 arcsec, which is the indication of better crystal quality for the GaP layer grown on GaN without a low temperature buffer layer. Because it provides less nucleation sites grown at high growth temperature, the three-dimensional (3D) growth is prolonged. The crystalline quality of GaP is lightly improved when the surface of GaN substrate is pretreated by PH3 , while it turned to be polycrystalline when the substrate is pretreated by TEGa.     

Time-dependent model of the growth of oxide crystals from melt by the Czochralski method

A numerical time-dependent model of the growth of oxide crystals from melt by the Czochralski method with weight sensor control has been developed. The approach proposed was used in a series of calculations of bismuth germanate and gallium-gadolinium garnet crystal growth.     

Formation of deep p–n junctions in p-type Czochralski grown silicon by hydrogen plasma treatment

Received: 15 May 1997/Accepted: 10 September 1997     

Laser spectroscopy of CaF2:Eu:Sm thin films grown by pulsed laser deposition

Thin films of CaF₂ co-doped with low concentrations of Eu and Sm ions were grown by pulsed laser deposition (PLD) using a KrF (λ=248 nm) as the ablation source. To the best of our knowledge, the work presented here is the first report of rare-earth-doped CaF₂ films grown by PLD with this source. Combined laser excitation-emission spectroscopy was used to map out electronic transitions of Eu³⁺ with ⁷F₀→⁵D₁ excitation and the ⁵D₀→⁷F₁ emission. At the low concentrations used here the crystal field center of cubic symmetry is dominant in the films that are same for laser targets. However, charge compensated centers are present in the bulk crystal precursor. The removal of the charge compensated centers in the films and the target is likely caused by the target preparation where high pressure and temperature were applied.     

Periodically poled lithium niobate structures grown by the off-center Czochralski technique for backward and forward second harmonic generation

We report on the characterization of periodically poled lithium niobate structures grown by the off-center Czochralski technique with periods ranging between 2 and . The domains distribution along the crystal was inspected by a profilometer scan after etching the structures and carrying a suitable data processing. The second harmonic generation efficiency was predicted by numerically integrating the governing equations through to a recently proposed nonlinear bidirectional beam propagation method. The numerical analysis pointed out the feasibility of the backward second harmonic generation in the sample with the shortest domain period. The predicted second harmonic generation efficiency was finally corrected considering the phase shifts induced in the second harmonic wave by the presence of different sized domains.