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1.
奥硝唑残留是一种新兴污染物,对环境和人类健康具有巨大的威胁.采用密度泛函理论,研究了奥硝唑在锐钛矿TiO_2(101)晶面的吸附特性.优化了奥硝唑在锐钛矿TiO_2(101)晶面的吸附结构,计算了最佳吸附位点,吸附能,态密度,电子结构图.结果表明,当咪唑环上N(3)原子吸附在TiO_2的Ti(5)原子上时,吸附能最大,为最稳定的吸附构型.通过对吸附构型的分析,我们发现C(2)-N(3)键呈现变弱趋势,我们推测奥硝唑在TiO_2表面降解的可能性以及反应活性位点就是咪唑环上C-N键. 相似文献
2.
采用基于密度泛函理论(DFT)广义梯度近似(GGA)下的第一性原理方法系统地研究了不同覆盖度下O在Ni(111)表面的吸附特性.计算结果表明,O在Ni(111)表面的稳定吸附位为三重面心立方(fcc)洞位,吸附能随着覆盖度的增加而减小,O诱导Ni(111)表面功函数的变化量与覆盖度成近线性关系,并随着覆盖度的增加而增大.同时,通过对电子密度和分波态密度的分析发现:O在Ni(111)表面的吸附使得Ni表面电子向O原子转移,形成表面偶极矩,导致功函数增加;表面Ni原子的3d轨道和O的2p轨道通过耦合、杂化作用形成成键态和反键态,而反键态几乎不被占据,因而O—Ni键相互作用比较强,吸附能较大.
关键词:
表面吸附
密度泛函理论
吸附能
功函数 相似文献
3.
The dissociative adsorption of cyclopropane on the copper surface was studied using quantum chemical molecular dynamics method with “Colors-Excite” code and density functional theory by Amsterdam Density Functional program (ADF2000). The excited state of cyclopropane was used as adsorbate to simulate the dissociated adsorption under an irradiation energy of ca. 10 eV. One of the C-C bonds in cyclopropane was broken and the two new bonds between cyclopropane and copper surface were formed. The electrons transferred from the copper atoms to cyclopropane with a value of about 0.2e. The shorter distances between the carbons and surface copper atoms showed the existence of strong interaction. Consistently, the results indicated metallacyclopentane was the most possible intermediate species in dissociative adsorption by ADF2000 and “Colors-Excite” method. 相似文献
4.
孙艳 《原子与分子物理学报》2020,37(5):644-648
利用密度泛函理论研究了低覆盖度下CO分子在Ni(110)表面的吸附结构和电子态。研究结果表明:在低覆盖度情况下, CO分子优先垂直吸附在短桥位,其次是顶位和长桥位。垂直短桥位吸附、顶位吸附相应的振动频率分别是1850.52 cm-1、1998.08cm-1。态密度的研究结果表明:CO分子和Ni原子在-10 eV -8 eV,-8 eV—-6 eV及1 eV -5 eV能量范围内发生了杂化作用。-10ev -8ev能量范围内的杂化主要来源于C、O原子的s轨道、pz轨道与Ni原子s、p、d轨道的杂化作用。-8ev—-6ev能量范围内的杂化作用主要来源于C、O原子的py、 px轨道与Ni原子d、s轨道的杂化作用。轨道间的杂化作用是吸附作用的主要来源。 我们计算的吸附位置与相应的振动频率与相关实验结果基本一致。 相似文献
5.
《Physics letters. A》2020,384(29):126754
Magnetic anisotropy energy (MAE) plays a key role for 2D magnetic materials, which have attracted significant attention for their promising applications in spintronic devices. Based on first-principles calculations, we have investigated the influence of surface adsorption on the ferromagnetism and MAE of monolayer CrI3. We find that Li adsorption can dramatically enhance its ferromagnetism, and tune its easy magnetization axis to the in-plane direction from original out-of-plane at certain coverage of Li. The monotonic enhancement of in-plane magnetism in CrI3 as the coverage of Li increases are attributed to electrostatic doping induced by charge transfer between Li atoms and I atoms, as supported by the charge doping simulation. The tunable robust magnetic anisotropy may open new promising applications of CrI3–based materials in spintronic devices. 相似文献
6.
Theoretical study of the adsorption of DOPA-quinone and DOPA-quinone chlorides on Cu (1 0 0) surface
Shuang-Kou Chen Bo-Chu Wang Tai-Gang ZhouWen-Zhang Huang 《Applied Surface Science》2011,257(18):7938-7943
The marine mussel secreted adhesive proteins and could bind strongly to all kinds of surfaces. Studies indicated that there was an unusual amino acid 3,4-dihydroxy-l-phenylanine (DOPA). DOPA could be oxidized to DOPA-quinone easily, which had a superior ability to on surface directly. The technology of electrolyzing seawater was employed to generate HOCl solution to react with DOPA-quinone and form DOPA-quinone chlorides (DOPA-quinone-Cl) to hinder the adhesion. However, the detailed hinder-mechanism remained unknown to be fully explained. Herein, using quantum chemical density functional theory methods, we have systematically studied three kinds of adsorption for DOPA-quinone and DOPA-quinone-Cl on Cu (1 0 0) surface: hydroxyl oxygen-side vertical, carbonyl oxygen-side vertical, amino N-terminal vertical adsorptions and carried out geometry optimization and energy calculation. The results showed that two molecules could absorb on the Cu (1 0 0) through hydroxyl oxygen-side vertical adsorption, while the other two kinds of adsorption could not form an effective adsorption. Calculations of adsorption energy for hydroxyl oxygen-side vertical adsorption indicated that: after HOCl modification, adsorption energy decreased from −247.2310 kJ/mol to −177.0579 kJ/mol for DOPA-quinone and DOPA-quinone-Cl; and the Mulliken Charges Populations showed that the electrons transferred from surface to DOPA-quinone-Cl was less than that to DOPA-quinone, namely, the fewer the number of electrons transferred, the weaker interaction between molecular and surface. After the theoretical calculation, we found that the anti-foul goal had been achieved by electrolysis of seawater to generate HOCl to modify DOPA-quinone, which led to the reduction of adsorption energy and transferred electrons. 相似文献
7.
基于密度泛函理论的第一性原理计算,对过渡金属Ni晶体与Ni (111)表面的结构和电子性质进行了研究, 并探讨了单个C原子在过渡金属Ni (111)表面的吸附以及两个C原子在Ni(111)表面的共吸附. 能带和态密度计算表明, Ni晶体及Ni (111)表面在费米面处均存在显著的电子自旋极化. 通过比较Ni (111)表面各位点的吸附能,发现单个C原子在该表面最稳定的吸附位置为第二层Ni原子上方所在的六角密排洞位, 吸附的第二个C原子与它形成碳二聚物时最稳定吸附位为第三层Ni原子上方所在的面心立方洞位. 电荷分析表明,共吸附时从每个C原子上各有1.566e电荷转移至相邻的Ni原子, 与单个C原子吸附时C与Ni原子间的电荷转移量(1.68e)相当. 计算发现两个C原子共吸附时在六角密排洞位和面心立方洞位的磁矩分别为0.059μB和 0.060μB,其值略大于单个C原子吸附时所具有的磁矩(0.017μB). 相似文献
8.
依据实验数据,假定CO2在金属铀表面吸附氧化初期形成的吸附中间体为UCO2.根据密度泛函理论(DFT)的Becke3lyp方法计算得UCO2(C2v构型)分子的5A1态能量最低,这与用原子分子反应静力学与群论确定UCO2的基电子状态为5A1的结果一致.计算表明,CO2在金属铀表面的吸附是放热反应,其吸附量随着温度的升高而不断减少,其吸附热在1 atm下为51.68 kJ.mol-1,该值大于40 kJ.mol-1,故CO2在金属铀表面的吸附是化学吸附. 相似文献
9.
用理论计算的方法研究了不同覆盖度的乙烯在Ni(110)表面吸附的位置.乙烯的吸附几何结构在团簇计算中进行了局部优化.在低覆盖度下,单个乙烯分子占据了短桥位和顶位之间的中间位置.乙烯分子的C—C轴大致沿衬底的Ni原子链排列(即沿<110>晶向),C—C轴与衬底Ni(110)表面有10°的倾斜角.乙烯分子的C—C键的键长为0151nm.在高覆盖度下(05ML),乙烯在Ni (110)上形成了有序的c(2×4)相,在一个表面元胞内的两个乙烯分子的吸附位置类似于低覆盖度时的结果,但乙烯分子的C—C 键键长分别为0142和0143nm. 相似文献
10.
D. Kecik 《Surface science》2009,603(2):304-3199
A first principles study is performed to investigate the adsorption characteristics of hydrogen on magnesium surface. Substitutional and on-surface adsorption energies are calculated for Mg (0 0 0 1) surface alloyed with the selected elements. To further analyze the hydrogen-magnesium interaction, first principles molecular dynamics method is used which simulates the behavior of H2 at the surface. Also, charge density differences of substitutionally doped surface configurations were illustrated. Accordingly, Mo and Ni are among the elements yielding lower adsorption energies, which are found to be −9.2626 and −5.2995 eV for substitutionally alloyed surfaces, respectively. In light of the dynamic calculations, Co as an alloying element is found to have a splitting effect on H2 in 50 fs, where the first hydrogen atom is taken inside the Mg substrate right after the decomposition and the other after 1300 fs. An interesting remark is that, elements which acquire higher chances of adsorption are also seen to be competent at dissociating the hydrogen molecule. Furthermore, charge density distributions support the results of molecular dynamics simulations, by verifying the distinguished effects of most of the 3d and 4d transition metals. 相似文献
11.
本文采用基于密度泛函理论的第一性原理方法,研究了气体分子CO、NO、NO_2和SO_2吸附对Ti掺杂石墨烯(Ti G)电子结构和磁性的调制.研究表明:Ti G对CO、NO、NO_2和SO_2分子的吸附作用较强,各分子与Ti原子键合并形成Ti-X键(X代表C、O、N原子);各分子的吸附可导致Gas@Ti G体系电磁性质明显改变:CO分子吸附基底后,虽未能引起CO@Ti G体系电子性质改变和磁性的产生,却能够有效调控该体系的带隙宽度;不同于CO分子,NO、NO_2和SO_2分子的吸附使得半导体性的Ti G基底转变为金属特性,但各体系磁性表征不同:NO@Ti G发生完全自旋极化,即NO分子与基底上均有自旋分布,且二者的自旋方向相同;顺磁性的NO_2分子吸附于Ti G基底时磁性消失;SO_2分子吸附于Ti G基底后自身产生磁性,但基底几乎未发生自旋极化,SO_2@Ti G呈现自旋极化的局域分布特征.由此,依据分子吸附后体系电磁性质特征的不同,可辨识被测气体分子.此项研究结果为高灵敏度和高选择性的石墨烯基气体传感器的设计提供理论参考. 相似文献
12.
Density functional theory (DFT) for generalized gradient approximation calculations has been used to study the adsorption of atomic oxygen and water molecules on Ni(1 1 1) and different kind of Ni-Cr(1 1 1) surfaces. The fcc hollow site is energetically the most favorable for atomic oxygen adsorption and on top site is favorable for water adsorption. The Ni-Cr surface has the highest absorption energy for oxygen at 6.86 eV, followed by the hcp site, whereas the absorption energy is 5.56 eV for the Ni surface. The Ni-O bond distance is 1.85 Å for the Ni surface. On the other hand, the result concerning the Ni-Cr surface implies that the bond distances are 1.93-1.95 Å and 1.75 Å for Ni-O and Cr-O, respectively. The surface adsorption energy for water on top site for two Cr atom substituted Ni-Cr surface is 0.85 eV. Oxygen atoms prefer to bond with Cr rather than Ni atoms. Atomic charge analysis demonstrates that charge transfer increases due to the addition of Cr. Moreover, a local density of states (LDOS) study examines the hybridization occurring between the metal d orbital and the oxygen p orbital; the bonding is mainly ionic, and water bonds weakly in both cases. 相似文献
13.
应用密度泛函理论,本文系统地研究了O在Au(111)表面上的吸附能、吸附结构、功函数、电子密度和投影态密度,给出了覆盖度从0.11ML到1.0ML的范围内,O的吸附特性随覆盖度变化的规律.研究发现O的稳定吸附位为3重面心立方(fcc)洞位,O在fcc洞位的吸附能对覆盖度比较敏感,其值随着覆盖度的增加而减小;O诱导Au(111)表面功函数的变化量与覆盖度成近线性关系,原因是Au表面电子向O偏移,形成表面偶极子;O—Au的相互作用形成成键态和反键态,且反键态都被占据,造成O—Au键很弱,O吸附能较小.
关键词:
表面吸附
Au(111)表面
密度泛函理论
电子特性 相似文献
14.
以Ni和Cu原子中心替换的二十面体Al12X(X=Ni、Cu)团簇为基体、采用密度泛函理论系统计算研究了H原子及H2分子在团簇表面的吸附,并对比了纯Al13团簇对H及H2的吸附,结果表明:相对于纯Al13中H原子的桥位吸附、掺杂团簇Al12X(X=Ni、Cu)中H原子均吸附于团簇顶位;无论是吸附H原子还是H2分子,Al12Ni的几何结构均发生大的畸变;相较H2在纯Al13团簇表面的解离吸附,H2在掺杂团簇Al12X(X=Ni、Cu)表面的解离反应过程中反应能均增大、势垒均降低,这表明掺杂团簇Al12X(X=Ni、Cu)相较纯Al13团簇更有利于H2解离吸附的发生。 相似文献
15.
采用基于密度泛函理论的第一性原理方法, 研究了纯锆表面和含Nb或Ge锆合金表面上氧的吸附性质. 结果表明, Nb和Ge对Zr(0001), (1120)和(1010)表面吸附性质的影响各不相同. 根据计算得到的偏聚能结果, Nb和Ge迁移到Zr(0001)表面比迁移到其他两个表面更容易, 而Nb和Ge 都可以降低Zr(0001)表面对氧原子的吸附能力, 因此这两种元素都能抑制锆合金的初始氧化. 进一步的电子结构分析发现, Nb和Ge改变表面对氧原子的吸附能力是通过改变表面d能带的分布来实现的. 相似文献
16.
Jianming Xie 《Journal of magnetism and magnetic materials》2010,322(19):L37
The electronic and magnetic properties of wurtzite ZnS semiconductor doped with transition metal (Cr, Mn, Fe, Co, and Ni) atoms are studied by using the first-principle’s method in this paper. The ZnS bulk materials doped with Cr, Fe, and Ni are determined to be half-metallic, while those doped with Mn and Co impurities are found to be semiconducting. These doped transition metal ions have long range interactions mediated through the induced magnetic moments in anions and cations of host semiconductors. These doped ZnS-based diluted magnetic semiconductors seem to be good candidates for the future spintronic applications. 相似文献
17.
基于密度泛函理论(DFT)的广义梯度近似(GGA),本文对本征石墨烯以及掺杂Fe,Co,Ni石墨烯的几何结构和电子性质进行了优化计算,并计算了C_2H_4在本征石墨烯以及掺杂石墨烯表面的吸附过程,讨论了体系的吸附能、稳定性、DOS及掺杂对键长的影响.结果表明C_2H_4在本征石墨烯B位的吸附和掺杂石墨烯的吸附为化学吸附,在本征石墨烯T和H位的吸附为物理吸附;掺杂后石墨烯的比表面积增大,与本征石墨烯相比,掺杂使费米能级附近的态密度积分显著提高,表明掺杂石墨烯的电导性会发生变化,从而影响对C_2H_4的气敏度..C_2H_4在Fe、Co、Ni分别掺石墨烯的最佳吸附位为T位、H位和B位;掺杂Fe,Ni后体系的吸附能力显著提高,且掺杂Ni时体系的吸附能力最好. 相似文献
18.
19.
The structural, electronic and magnetic properties of TMGen (TM=Mn, Co, Ni; n=1-13) have been investigated using spin polarized density functional theory. The transition metal (TM) atom prefers to occupy surface positions for n<9 and endohedral positions for n≥9. The critical size of the cluster to form endohedral complexes is at n=9, 10 and 11 for Mn, Co and Ni respectively. The binding energy of TMGen clusters increases with increase in cluster size. The Ni doped Gen clusters have shown higher stability as compared to Mn and Co doped Gen clusters. The HOMO-LUMO gap for spin up and down electronic states of Gen clusters is found to change significantly on TM doping. The magnetic moment in TMGen is introduced due to the presence of TM. The magnetic moment is mainly localized at the TM site and neighbouring Ge atoms. The magnetic moment is quenched in NiGen clusters for all n except for n=2, 4 and 8. 相似文献
20.
Hongxia Chen 《Physics letters. A》2011,375(24):2444-2447
We have studied the structure, electronic and magnetic properties of wurtzite (WZ) ZnS semiconductor doped with one or two C atoms using first-principles calculations. The moderate formation energy implied that C-doped ZnS could be fabricated experimentally. The total magnetic moment of the 72 atom super cell was 2.02μB, mainly due to the 2p component of the C atom. Electronic structures showed ZnS doped with C atom was p-type half-metallic ferromagnetic (FM) semiconductor and hole mediation was responsible for the ferromagnetism. The large energy difference (154 meV) between the FM and antiferromagnetic (AFM) state implied room-temperature ferromagnetism for C-doped WZ ZnS, which has great potential in spintronic devices. 相似文献