界面生长中断对GaAs (111)衬底上 AlGaAs/GaAs量子阱电子自旋寿命的影响

用固源分子束外延技术(SSMBE)在GaAs(111)衬底上,采用不同的界面中断时间生长了多组AlGaAs/GaAs多量子阱样品(MQWs),通过室温发光光谱和时间分辨克尔旋转谱(TRKR)研究了界面生长中断对发光光谱半峰全宽(FWHM)和量子阱中电子自旋弛豫时间(自旋寿命)的影响,发现了自旋寿命随着界面生长中断时间的增加呈现先减小后增加的趋势,此变化趋势与荧光光谱半峰全宽表征的材料质量随中断时间的变化一致,适当的界面生长中断时间能有效的增加GaAs (111)衬底上AlGaAs/GaAs 多量子阱中电子自旋寿命。     

GaAs/AlGaAs量子阱材料的X射线形貌及其发光性能

本文介绍了用X射线双品形貌术研究MBE生长的GaAs/AlGaAs量子阱材料中的生长缺陷、位错及其对发光性能的影响。同时研究了低温下MBE生长的GaAs/AlGaAs量子阱材料的正交方向的位错。在有应变超品格过渡层高温生长的量子阱材料中,位错及光致发光性能有明显的改善。     

图形衬底量子线生长制备与荧光特性研究

报道了在V型槽图形衬底上利用分子束外延技术外延生长的GaAs/AlGaAs量子线.外延截面在扫描电子显微镜下可以看到在V型槽底部形成了弯月型量子线结构,量子线尺寸约为底边60 nm高14 nm的近三角形.低温87 K下光致发光谱测试在793.7和799.5 nm处出现峰值,验证了量子线的存在.理论近似计算结果显示,相比等宽度量子阱有8 meV的蓝移正是由于横向量子限制引起的. 关键词： V型槽图形衬底 量子线 GaAs     

掺杂对称性对(110)晶向生长GaAs/AlGaAs量子阱中电子自旋弛豫动力学的影响

采用时间分辨圆偏振光抽运-探测光谱,测量了(110)晶向生长的近似对称和完全非对称掺杂GaAs/AlGaAs量子阱中的电子自旋弛豫,发现两种量子阱材料中的电子自旋弛豫时间随载流子浓度的增大均呈现出先增大后减小的趋势,且近似对称掺杂GaAs量子阱中的电子自旋弛豫时间明显大于完全非对称掺杂量子阱.分析表明,在(110)晶向生长的GaAs量子阱中并非只有通常认为的Bir-Aronov-Pikus(BAP)机理起作用,在低载流子浓度区域,两种量子阱中D′yakonov-Perel′(DP)机理起主导作用,高载流子浓度区域BAP机理和DP机理都起作用,完全非对称掺杂的量子阱中DP机理强于近似对称掺杂量子阱.     

GaNAs/GaAs量子阱的激子局域化以及退局域化

我们利用光荧光(PL)以及时间分辨光谱(TRPL)研究了用MBE生长在GaAs衬底上的GaNAs/GaAs量子阱的激子局域化以及退局域化.研究发现,在低温下用连续光(Cw)激发,由于GaNAs中势振荡所产生的局域激子发光是所测量到光谱的主要发光来源.然而在脉冲激发下,情况完全不同.在高载流子密度激发或者高温下GaNAs/GaAs量子阱中例外,一个高能端的PL峰成为了主要的发光来源.通过研究,我们将这个新的发光峰指认为量子阱中非局域激子复合的PL峰.这个发光峰在温度和激发强度的变化过程中与局域激子相互竞争.我们相信这一过程也是许多文献所报道的在InGaN和AlGaN等氮化物中经常观测到的发光峰位随温度"S"形变化的主要根源.     

载流子复合对时间分辨法拉第旋转光谱的影响

利用二能级体系速率方程,推导了半导体中探测光探测到的法拉第旋转光谱的理论模型,发现电子-空穴对的复合对法拉第旋转信号随时间的衰减有重要影响,并利用该模型对GaAs量子阱中实验测得的法拉第旋转光谱进行拟合,得到GaAs量子阱材料中的电子自旋弛豫时间为73.5 ps,而直接利用单指数进行拟合得到的电子自旋弛豫时间仅为51.3 ps. 因此,直接利用单指数对法拉第旋转光谱进行拟合得到电子自旋弛豫时间的传统做法是不准确的. 关键词： 自旋弛豫时间 时间分辨法拉第旋转光谱 GaAs量子阱     

GaNAs/GaAs量子阱的激子局域化以及退局域化

我们利用光荧光(PL)以及时间分辨光谱(TRPL)研究了用MBE生长在GaAs衬底上的GaNAs/GaAs量子阱的激子局域化以及退局域化。研究发现,在低温下用连续光(CW)激发,由于GaNAs中势振荡所产生的局域激子发光是所测量到光谱的主要发光来源。然而在脉冲激发下,情况完全不同。在高载流子密度激发或者高温下GaNAs/GaAs量子阱中例外,一个高能端的PL峰成为了主要的发光来源。通过研究,我们将这个新的发光峰指认为量子阱中非局域激子复合的PL峰。这个发光峰在温度和激发强度的变化过程中与局域激子相互竞争。我们相信这一过程也是许多文献所报道的在InGaN和AlGaN等氮化物中经常观测到的发光峰位随温度“S”形变化的主要根源。     

量子限制受主的光致发光研究

对一系列δ掺杂浅受主铍（Be）原子的GaAs/AlAs多量子阱和均匀掺杂Be受主的GaAs体材料中Be原子的能级间跃迁进行了光致发光（PL）研究.实验中所用的样品是通过分子束外延技术生长的均匀掺杂Be受主的GaAs外延单层样品和一系列GaAs/AlAs多量子阱样品,并在每量子阱中央进行了Be原子的δ掺杂,量子阱宽度为30 到200 ?.在4.2 K温度下测量了上述系列样品的光致发光谱,清楚地观察到了束缚激子的受主从基态1s_3/2（Γ₆）到第一激发态 关键词： 量子限制受主 光致发光 多量子阱 δ掺杂     

声表面波对GaAs(110)量子阱发光特性的调制

结合声表面波和光致发光谱在低温(15K)下对非故意掺杂的GaAs(110)量子阱结构的发光特性进行了研究.实验结果表明，由于声表面波的作用GaAs(110)量子阱的发光强度减弱,并且其对应的重空穴能级出现了分裂的现象，当施加的声波强度P_rf达到20dBm时，能级分裂ΔE达到了10meV.进一步讨论了声表面波对GaAs(110)量子阱圆偏振光自旋注入的影响. 关键词： 发光 GaAs量子阱 声表面波 自旋极化     

本征GaAs量子阱中电子自旋扩散输运的时-空分辨吸收光谱研究

发展了一种时-空分辨圆偏振光抽运-探测光谱及其理论,并用于本征GaAs量子阱中电子自旋扩散输运的实验研究.获得室温下本征GaAs量子阱中的“自旋双极扩散系数”为D_as=37.5±15 cm²/s.此结果比用自旋光栅法测量到的掺杂GaAs量子阱中电子自旋扩散系数小.解释为是由于“空穴库仑拖曳”效应减慢了电子自旋波包的扩散输运. 关键词： 时-空分辨抽运-探测光谱 电子自旋扩散 GaAs量子阱     

High-Density Effects on the Exciton Systems and Their Dynamical Behavior in Al x Ga 1− x As/AlAs Quantum Wires

In Al x Ga 1 m x As/AlAs quantum wire (QWR) structures, the lower lying indirect exciton (IE) photoluminescence (PL) peak shows remarkable blue-shift under intense light-excitation contrary to the higher lying direct exciton (DE) PL band with very small blue-shift, although the two kinds of exciton states consist of the common hole state. In time-resolved PL spectra in the type-II QWR of x = 0.4, the DE PL band appears at an earlier stage without peak-shift and the excitons relax to the IE state making the IE PL peak dominant with time evolution. The blue-shift of the IE peak in a quasi equilibrium after the relaxation seriously depends on the excitation density. The origin of the blue-shift is explained in terms of many-body effects including band-bending effect due to the electric field induced by spatially separated electrons and holes in the QWR structures.     

Quantum wire heterostructure for optoelectronic applications

Quantum wire (QWR) heterostructures suitable for optoelectronic applications should meet a number of requirements, including defect free interfaces, large subband separation, long carrier lifetime, efficient carrier capture. The structural and opticl properties of GaAs/AlGaAs and InGaAs/GaAs quantum wire (QWR) heterostructures grown by organometallic chemical vapor deposition on nonplanr substrates, which satisfy many of these criteria, are described. These crescent-shaped QWRs are formed in situ during epitaxial growth resulting in virtually defect free interfaces. Effective wire widths as small as 10nm have been achieved, corresponding to electron subband separations greater than K_BT at room temperature. The enhanced density of states at the QWR subbands manifests itself in higher optical absorption and emission as visualized in photoluminescence (PL), PL excitation, amplified spontaneous emission and lasing spectra of these structures. Effective carrier capture into the wires via connected quantum well regions, which is important for enhancing the otherwise extremely small capture cross section of these wires, has also been observed. Room temperature operation of GaAs/AlGaAs and strained InGaAs/GaAs QWR lasers with threshold currents as low as 0.6mA has been demonstrated.     

Time-resolved photoluminescence spectra of high-density InGaAs/AlGaAs quantum wire structures

We investigated the temperature dependence of the time-resolved photoluminescence (PL) spectra of high-density InGaAs/AlGaAs quantum wire (QWR) distributed-feedback laser structure on a submicron grating. A red-shift of peak in the time-resolved PL after photo-excitation was observed due to the relaxation of the photo-generated excitons from the entire QWR to localized centers at 10 K. On the other hand, at 60 K, no red-shift in the time-resolved PL spectra was observed since the localization centers are thermally activated and the excitons are delocalized.     

First room temperature lasing from the fundamental state of V-grooved quantum wire lasers

Lasing from the ground state electron and heavy-hole-like transition of quantum wire (QWR) is demonstrated for the first time at room temperature, with an oxide-isolated V-grooved GaAs/AlGaAs triple QWR laser grown by flow-rate modulation epitaxy (FME). The lasing peaks at all temperatures (4–300 K) are in reasonably good agreement with both the photon energies of the peaks of the photoluminescence curves and the numerical calculation of the electronic sub-band energy states of the corresponding QWR structure. These results are considered to be responsible for the reduced heterointerface inhomogeneities (the Stokes shift 0.3 meV) of the FME grown QWR, giving a low-loss wave guide in the QWR laser.     

Exciton and multi-exciton structures in GaAs quantum dots studied by single-photon correlation spectroscopy

Single-photon emitters and detectors are key devices for realizing secure communications by single-photon-based cryptography and single-photon-based quantum computing. For the establishment of these technologies, we need to understand the electronic structures of single and multiple excitons. Therefore, we have studied their emissions via the micro-photoluminescence (μ-PL) spectra of strain-free GaAs/AlGaAs single quantum dots, using excitation power dependence, time-resolved, and single-photon correlation measurements. Under pulsed excitation, we observed clear photon antibunching and bunching by auto- and cross-correlation measurements. From these results, we found that the emission peaks observed in the μ-PL spectra originated from exciton, charged exciton, and biexciton states.     

Carrier recombination kinetics in (3 1 1)A InGaAs sidewall quantum wires

We present a study of the optical properties and carrier dynamics in strained InGaAs sidewall quantum wires (QWR) on patterned GaAs (3 1 1)A substrates by means of picosecond time-resolved photoluminescence (PL). A pronounced dynamical red shift of the QWR-PL band when increasing the delay time after the pulse excitation is observed. In addition, time-resolved data show a significant shortening of the PL decay time from the wire at short delay and when high excitation power is used. The data are compared with theoretical predictions. The results, i.e. the dynamical red shift observed in the wire emission and the shortening of the PL decay with increasing the excitation density, are interpreted in terms of a dynamical screening effect of the piezoelectric field.     

Detecting spatially localized excitons in InGaN quantum well structures with a micro-photoluminescence technique

Spatially localized excitons are observed in InGaN quantum well structures at 4 K by using a micro-photoluminescence (PL) technique. By combining PL and nano-lithographic techniques, we are able to detect PL signals with a 0.2 μm spatial resolution. A sharp PL line (linewidth of <0.4 meV) is clearly obtained, which originates from a single localized exciton induced by a quantum dot like a local potential minimum position. Sharp PL spectra detected in three QWs with different indium compositions confirm that there are exciton localization effects in quantum wells in the blue-green (about 2.60 eV, 477 nm) to purple (about 3.05 eV, 406 nm) regions.     

Formation of high-density hexagonal networks of InGaAs ridge quantum wires by atomic hydrogen-assisted selective molecular beam epitaxy

Feasibility of growth of InGaAs ridge quantum wire (QWR) hexagonal network structures by atomic hydrogen (H^*)-assisted selective molecular beam epitaxy (MBE) is investigated for use in novel hexagonal quantum circuits based on the binary-decision diagram (BDD) architecture. The fabricated structures were characterized in detail by SEM, AFM, PL and CL measurements.

By using patterned substrates with mesa-pattern directions of 1 0 0– and 5 1 0– together with optimized H^*-assisted selective MBE, hexagonal networks of the sharp and uniform InGaAs ridge structures were realized down to submicron pitches. Embedded InGaAs QWR hexagonal networks were successfully formed on the ridge structures, giving prospects of realizing a node device density lager than 10⁸ cm⁻².     

Two-carrier transition in radiative recombination of two-dimensional electrons in GaAs/AlGaAs

We observed photoluminescence (PL) and photoluminescence excitation (PLE) spectra due to shake-up processes of recombination of two-dimensional electrons and free excitons in a modulation-doped GaAs quantum well at He temperatures. One of the processes is that when an electron recombines with a hole, another electron is excited from the conduction band in GaAs to that in AlGaAs. The other process is that a hole is excited from an acceptor level or the valence band in GaAs to the valence band in AlGaAs during recombination. The electron process is observed in both PL and PLE spectra while the hole process only in the PL spectra. The excitation-intensity dependence of the peak intensity of hole-excited PL is almost quadratic, indicating three-carrier process in the shake-up process. The band offsets of the conduction and valence bands are estimated to be 220 and 146 meV, respectively.     

Micro-Photoluminescence Confocal Mapping of Single V-Grooved GaAs Quantum Wire

We perform the micro-photoluminescence measurement at low temperatures and a scanning optical mapping with high spatial resolution of a single V-grooved GaAs quantum wire modified by the selective ion-implantation and rapid thermally annealing. While the mapping shows the luminescences respectively from the quantum wires and from quantum well areas between quantum wires in general, the micro-photoluminescence at liquid He temperatures reveals a plenty of spectral structures of the PL band for a single quantum wire. The spectral structures are attributed to the inhomogeneity and non-uniformity of both the space structure and compositions of real wires as well as the defects nearby the interface between quantum wire and surrounding quantum well structures. All these make the excitons farther localized in quasi-zero-dimensional quantum potential boxes related to these non-uniformity and/or defects. The results also demonstrate the ability of micro-photoluminescence measurement and mapping for the characterization of both opto-electronic and structural properties of real quantum wires.