退火对Ga_2O_3薄膜特性的影响

采用金属有机物化学气相沉积法在c面蓝宝石衬底上生长了高质量的β-Ga_2O_3薄膜,并将样品分别在真空、氧气、氮气氛围下退火30 min,研究了各类退火工艺对Ga_2O_3薄膜特性的影响,对退火所得的薄膜进行了X射线衍射、光致发光谱、紫外透射谱和原子力显微镜扫描的研究。结果表明,各类退火工艺均能够优化薄膜的晶体质量和表面形貌,同时有效改善了薄膜的光学性质。其中,氧气退火后的样品在可见光波段透射率高达83%,且吸收边更加陡峭;表面粗糙度降至0.564 nm,其表面更为平整。这些结果说明氧气退火对晶体质量的提高最为显著。氮气、真空退火的样品在光致发光谱中出现365 nm的发光峰,这是大量氧空位的存在导致的。     

单晶硅表面有机硅烷/Ag2O纳米微粒复合自组装膜的制备和表征

利用分子自组装成膜技术 ,在单晶硅表面制备了有机硅烷 /Ag2 O纳米微粒复合膜 .应用接触角测定仪、原子力显微镜和X射线光电子能谱仪分析表征了薄膜的组成和结构 .结果表明 ,通过硅烷偶联剂 3 氨丙基 三乙氧基硅烷在单晶硅基底表面的成功组装 ,获得了较为均匀的硅烷化表面 ,而Ag2 O纳米微粒可在硅烷化表面成功地进行组装 ,并呈亚单层排布     

Nucleation and Growth of Magnetron-Sputtered Ag Nanoparticles as Witnessed by Time-Resolved Small Angle X-Ray Scattering

Kinetic aspects of the synthesis of Ag nanoparticles (NPs) by magnetron sputtering are studied by in situ and time-resolved small angle X-ray scattering (SAXS). Part of the NPs are found to become confined within a capture zone at 1–10 mm from the surface of the target and circumscribed by the plasma ring. Three regimes of the NP growth are identified: 1) early growth at which the average NP diameter rapidly increases to 90 nm; 2) cycling instabilities at which the SAXS signal periodically fluctuates either due to expelling of large NPs from the capture zone or due to the axial rotation of the NP cloud; and 3) steady-state synthesis at which stable synthesis of the NPs is achieved. The NP confinement within the capture zone is driven by the balance of forces, the electrostatic force being dominant. On reaching the critical size, large NPs acquire an excessive charge and become expelled from the capture zone via the electrostatic interactions. As a result, significant NP deposits are formed on the inner walls of the aggregation chamber as well as in the central area of the target.     

The EFG of the In-O-Bond In2O3, AgO and Ag2O

PAC measurements on¹¹¹In in In₂O₃, AgO and Ag₂O were performed to study the influence of different oxygen coordinations to the EFG.¹¹¹In was implanted at 500keV; in addition, AgO and Ag₂O were irradiated in the cyclotron to produce¹¹¹In via the (α, 2n) reaction. Using the point charge model and the known lattice structure of the oxides, the antishielding factor was calculated; it shows a strong dependence on the In-O bondlength.     

Band structure and chemical bonding in Cu2O and Ag2O oxides

The band structure, total and projected densities of states, and distributions of the valence and difference electron densities for copper and silver oxides are calculated in the framework of the density functional theory in the local approximation with ab initio norm-conserving pseudopotentials in the basis set of pseudoatomic orbitals. The results obtained are compared with the experimental data and calculations performed by other authors. The energy spectrum and spatial distribution of electrons in crystals are similar to each other. Metal ions are bonded to each other through charge density channels with a weakly pronounced maximum at the center of the empty tetrahedron.     

退火处理对ZnO薄膜晶体结构和导电性能的影响

利用直流反应磁控溅射法在硅衬底上沉积C轴择优取向的ZnO晶体薄膜,将该样品进行退火处理,并测量了样品的导电性能,结果显示退火处理可以引起薄膜的重结晶,从而改善薄膜的结晶状况,改变薄膜中的化学配比.退火后样品的薄膜电阻相对较小,增加了薄膜中施主的浓度,增强了薄膜的导电性.     

Micro-Mechanism of Silicon-Based Waveguide Surface Smoothing in Hydrogen Annealing

The micro-mechanism of the silicon-based waveguide surface smoothing is investigated systematically to explore the effects of silicon-hydrogen bonds on high-temperature hydrogen annealing waveguides.The effect of siliconhydrogen bonds on the surface migration movement of silicon atoms and the waveguide surface topography are revealed.The micro-migration from an upper state to a lower state of silicon atoms is driven by siliconhydrogen bonding,which is the key to ameliorate the rough surface morphology of the silicon-based waveguide.The process of hydrogen annealing is experimentally validated based on the simulated parameters.The surface roughness declines from 1.523 nm to 0.461 nm.     

反应磁控溅射制备TiO2和Nb2O5混合光学薄膜

利用反应磁控溅射技术在BK-7基片上制备了二氧化钛和五氧化二铌均匀混合的光学薄膜.薄膜的内部微结构、表面形貌、化学成分比例以及光学性质等用X射线衍射、高分辨扫描电子显微镜、原子力显微镜、X射线光电子能谱和紫外可见近红外分光光度计进行研究;发现制备的薄膜为非晶结构,薄膜的表面平整、内部结构致密,不存在柱状结构或结晶颗粒的缺陷,TiO2与Nb2O5的成分比例大致是1∶1.54.从光学透射光谱计算的折射率和消光系数显示,在550 nm波长处的折射率为2.34,消光系数为2.0×10－4.结果表明制备的薄膜是TiO2和Nb2O5均匀混合的高质量光学薄膜.     

氧氩比对SnO2/Ag/SnO2透明导电膜光电性能的影响

在室温及不同的氧氩比条件下,采用射频磁控溅射Ag层和直流磁控溅射SnO2层,在载玻片衬底上制备出了SnO2/Ag/SnO2多层薄膜.用霍尔效应测试仪、四探针电阻测试仪和紫外-可见-近红外光谱仪等表征了薄膜的电学性质和光学性质.实验结果表明:当氧氩比为1:14时,所制得的薄膜的光电性质优良指数最大,为1.69×10-2 Ω-1;此时,薄膜的电阻率为9.8×10-5Ω·cm,方电阻为9.68Ω/sq,在400～800 nm可见光区的平均光学透射率达85％;并且,在氧氩比为1:14时,利用射频磁控溅射Ag层和直流磁控溅射SnO2层在PET柔性衬底上制备出了光电性质优良的柔性透明导电膜,其在可见光区的平均光学透过率达85％以上,电阻率为1.22×10-4Ωcm,方电阻为12.05Ω/sq.     

薄膜热处理对ZnO薄膜晶体管性能的提高

制备了两种以SiO2为绝缘层的底栅ZnO薄膜晶体管,分别以未退火和退火处理的ZnO薄膜作为有源层.与未退火处理的ZnO薄膜晶体管相比,退火处理的ZnO薄膜晶体管的饱和迁移率由2.3 cm2/(V·s)增大至3.12 cm2/(V·s),阈值电压由20.8V减小至9.9V,亚阈值摆幅由2.6 V/dec减小至1.9 V/...     

H2O对N复合氧化膜Cr2O3作用机制的理论研究

本文基于第一性原理方法,研究水对N复合氧化膜Cr2O3的作用机制。结果表明N的复合影响H2O在表面的吸附位点及吸附高度,N的溶入与Cr形成稳定作用,减缓H2O对表面Cr-O间的破坏作用,改善氧化膜表层结构,提高表面电化学稳定性。因此,N的复合可增强氧化膜对H2O的作用,同时改善氧化膜的结构稳定性,从而提高不锈钢的抗氧化性。     

Ag2O nanoparticle clusters coated with porous gelatin-g-PMMA copolymer

Herein a special nanoparticle cluster coated with a porous copolymer is designed and prepared. At first, Ag₂O nanoparticles (secondary particles) were fabricated in gelatin solution by a facile chemical approach. Then these nanoparticles were entrapped in a copolymerization system containing gelatin, methyl methacrylate (MMA), an initiator, and using water as a solvent. The nanoparticle clusters coated with porous gelatin-g-PMMA copolymer (Ag₂O/gelatin-g-PMMA) were prepared by grafting methyl methacrylate onto gelatin, followed by coating solidification. One significant feature for our approach is that every Ag₂O aggregated cluster has been coated with porous gelatin-g-PMMA copolymer film in a unique way, and the Ag₂O nanoparticle could penetrate and escape from the coating freely in water by ultrasonication. As a result, this study provides a new approach to prepare monodispersed nanoparticles by ordered porous copolymers with controlled releasing.     

镱铒共掺Al2O3薄膜激光退火研究

讨论了激光退火工艺参量对镱铒共掺Al2O3薄膜表面形貌和退火均匀性的影响。薄膜样品被置放于衰减扩束透镜的3倍焦距位置时,薄膜上8 mm半径区域内近似均匀退火;退火时间为32 s时,表面形貌与退火前基本相同。阈值退火功率为5 W,最佳退火功率为20 W。对相同工艺制备的镱铒共掺Al2O3薄膜分别进行CO2激光退火和热退火处理,光致发光(PL)谱测量表明,前者峰值强度比后者强10倍以上,并且热退火光致发光强度随抽运功率增加出现饱和、下降,而激光退火近似随抽运功率单调线性增强。     

Nearly free electrons in the layered oxide superconductor Ag5Pb2O6

We present first measurements of quantum oscillations in the layered oxide superconductor Ag5Pb2O6. From a detailed angular and temperature dependent study of the de Haas-van Alphen effect we determine the electronic structure and demonstrate that the electron masses are very light, m* approximately 1.2me. The Fermi surface we observe is essentially that expected of nearly free electrons--establishing Ag5Pb2O6 as the first known example of a monovalent, nearly free electron superconductor at ambient pressure.     

Joining of textured YBCO with YBCO added Ag2O additive

The engineering applications of high temperature superconducting (HTS) single domain YBCO block require the material with larger size and more complex shape. However, traditional top-seeded melt growth (TSMG) method cannot meet this requirement. In this paper, solder technology of YBCO blocks using Ag₂O-doped YBCO slice has been performed in air with a rapid cooling rate, and the oxygen treatment techniques with a shorter time were used in the process. Microstructure analysis and superconducting characterization of the joint were investigated. The results show that a high quality joint is obtained without any macro cracks. Furthermore, the grains in the joint are well oriented as same as that of the base YBCO block. However, some defects such as voids and Cu–Ba–O phase segregations are discovered in the middle of the joint. Much finer Y211 (Y₂BaCuO₅) grains are attained in the soldering zone compared with that in the base YBCO. The trapped field measurement on bonded YBCO blocks shows a single maximum, indicating good superconducting properties in the joint.