Deposition and dielectric characterization of strontium and tantalum-based oxide and oxynitride perovskite thin films

We have synthesized the composition x = 0.01 of the (Sr_1-xLa_x)₂(Ta_1-xTi_x)₂O₇ solid solution, mixing the ferroelectric perovskite phases Sr₂Ta₂O₇ and La₂Ti₂O₇. Related oxide and oxynitride materials have been produced as thin films by magnetron radio frequency sputtering. Reactive sputter deposition was conducted at 750 °C under a 75 vol.% (Ar) + 25 vol.% (N₂,O₂) mixture. An oxygen-free plasma leads to the deposition of an oxynitride film (Sr_0.99La_0.01) (Ta_0.99Ti_0.01)O₂N, characterized by a band gap E_g = 2.30 eV and a preferential (001) epitaxial growth on (001) SrTiO₃ substrate. Its dielectric constant and loss tangent are respectively Epsilon' = 60 (at 1 kHz) and tanDelta = 62.5 × 10⁻³. In oxygen-rich conditions (vol.%N₂ ≤ 15%), (110) epitaxial (Sr_0.99La_0.01)₂(Ta_0.99Ti_0.01)₂O₇ oxides films are deposited, associated to a larger band gap value (E_g = 4.55 eV). The oxide films permittivity varies from 45 to 25 (at 1 kHz) in correlation with the decrease in crystalline orientation; measured losses are lower than 5.10⁻³. For 20 ≤ vol.% N₂ ≤ 24.55, the films are poorly crystallized, leading to very low permittivities (minimum Epsilon' = 3). A correlation between the dielectric losses and the presence of an oxynitride phase in the samples is highlighted.     

Significant suppression of leakage current in (Ba x ,Sr1-x )TiO3/MgO heterostructured thin films by thin MgO layers insertion

The leakage behavior and dielectric property of BST80/MgO heterostructured thin films deposited on LaNiO₃ (LNO)/Si substrates by sol-gel were investigated. The dielectric constant and the leakage current are modified by MgO insertion. The dramatic reduction in the leakage current effectively increased the charge retention of the capacitors consisted of heterostructured thin films as compared to the pure BST films. The significant reduction in the leakage current can be attributed to the minute solid solubility of MgO in the BST lattice and the potential barrier built in the interface between BST and MgO layers in the heterostructured thin films.     

Dielectric properties of Ca(Zr0.05Ti0.95)O3 thin films prepared by chemical solution deposition

Ca(Zr_0.05Ti_0.95)O₃ (CZT) thin films were grown on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by the soft chemical method. The films were deposited from spin-coating technique and annealed at 928 K for 4 h under oxygen atmosphere. CZT films present orthorhombic structure with a crack free and granular microstructure. Atomic force microscopy and field-emission scanning electron microscopy showed that CZT present grains with about 47 nm and thickness about 450 nm. Dielectric constant and dielectric loss of the films was approximately 210 at 100 kHz and 0.032 at 1 MHz. The Au/CZT/Pt capacitor shows a hysteresis loop with remnant polarization of , and coercive field of 18 kV/cm, at an applied voltage of 6 V. The leakage current density was about at 3 V. Dielectric constant-voltage curve is located at zero bias field suggesting the absence of internal electric fields.     

Heterometallic lead-titanium oxyalkoxide precursors to lead titanate thin films

Two lead titanium oxyalkoxides with composition Pb₂Ti₄O₂(O₂CCH₃)₂(OC₂H₅)₁₄ and Pb₂Ti₂O₂(O₂CCH₃)₂(OCH(CH₃)₂)₈ have been isolated and characterised by elemental analysis, IR, ²⁰⁷Pb NMR and molecular weight measurements. X-ray structural analysis of the 1:2 complex confirmed the presence of two Pb₂Ti₂O units which are linked by a common Pb···Pb edge and are held together by alkoxide and acetate bridges. The acetate groups have migrated from the Pb to the Ti centres during the reaction. Hydrolysis of the 1:1 Pb/Ti complex produced clear gels providing the H₂O/complex ratio was less than 4. Heat treatment of the gel results in loss of residual organics below 400°C. The XRD pattern indicates the presence of the pyrochlore and perovskite phases after heating at 500°C but the sample is poorly crystalline. Complete conversion to the perovskite phase of lead titanate occurs on heating to 600°C for 1 hour. Thin films of lead titanate were deposited by dip-coating a solution of this complex in isopropanol. Analyses of the films, carried out using electron microprobe, Scanning Auger Spectroscopy and Rutherford Backscattering, indicated that they were of excellent quality, crystalline after heating at 600°C and with relatively sharp substrate-coating interface.     

Optical and dielectrical properties of azo quinoline thin films

In this study, the optical and dielectrical properties of a novel series of quinoline azodyes (5-(4′-derivatives phenyl azo)-8-hydroxy-7-quinolinecarboxaldehyde) (AQL₁–AQL₅) were investigated and the obtained results were analyzed. The X-ray diffraction (XRD) patterns of AQL_n show that the materials in the powder form are a mixture of amorphous and crystalline structure, while the thermally deposited thin films are completely amorphous. The optical constants such as the refractive index, n, the absorption index, k and the absorption coefficient, α, were determined using spectrophotometric measurements of transmittance (T) and reflectance (R) in the wavelength range 200–2500 nm. According to the single oscillator model (SOM), some related parameters such as oscillation energy (E_o), the dispersion energy (E_d), the optical dielectric constant (ε_∞), the lattice dielectric constant (ε_L) and the ratio of free carrier concentration to its effective mass (N/m*) are estimated. The emission spectra of azo quinoline ligands (AQL_n) exhibit dual fluorescence peaks in the region 512–580 nm. This finding reveals the formation of two stoichiometric hydrogen-bonding in the ground and excited state. The dielectrical properties and alternating current conductivity (σ_AC) are investigated in temperature range 298–483 K and frequency range 0.1–100 KHz.     

Preparation, characterization and dielectric properties of 4,4-diphenylmethane diisocyanate (MDI) based cross-linked polyimide films

Four different types of cross-linked polyimides based on 4,4-diphenylmethane diisocyanate (MDI) were prepared by the reaction of different types of conventional poly(amic acid) intermediates with MDI as a cross-linking agent. Subsequently, they were thermally imidized in order to obtain corresponding cross-linked polyimide structure. The results of FTIR-ATR showed that MDI can effectively react with carboxylic acid groups of PAA to form cross-linked polyimide films. TGA, FTIR-ATR and SEM analyses were carried out for characterization of cross-linked polyimide (CPI) films. Moreover, the electrical properties such as dielectric breakdown strength, dielectric constant, I-V characteristics and loss factor of MDI based cross-linked polyimides have been checked. In addition, some physical properties such as water uptake, adhesion, hardness and solubility properties of the films were investigated.The results showed that all CPI films have good insulating properties such as high dielectric breakdown voltage, low loss factor (tan δ), leakage density and excellent physical properties.     

Enhanced dielectric properties of LSCO-buffered Ba(Sn<Subscript>0.05</Subscript>Ti<Subscript>0.95</Subscript>)O<Subscript>3</Subscript> thin film prepared by sol–gel processing

Ferroelectric Ba(Sn_0.05Ti_0.95)O₃ (BTS) thin films were deposited onto Pt/Ti/SiO₂/Si substrates by sol–gel technique with a 100 nm thick LSCO buffer layer. The influence of buffer layer on the phase and microstructure of the thin films was examined. Dielectric properties of the thin films were investigated as a function of frequency and direct current (DC) electric field. The results show that the LSCO buffer layer had a marked effect on the dielectric properties of the BTS films. The BTS thin films with LSCO buffer layer had enhanced dielectric properties.     

Effect of the linear siloxane chain in cyclic silsesquioxane (CSSQ) on the mechanical/electrical property of the thin films

Several kinds of cyclic silsesquioxane (CSSQ) precursors containing linear siloxane chain were prepared to improve both the mechanical properties of their thin films and the compatibility with heptakis (2,3,6-tri-O-methyl)-β-cyclodextrin (tCD) as a porogen. The precursors were synthesized using a hydrolysis/condensation reaction with 2,4,6,8-tetramethyl-2,4,6,8-tetra (trimethoxysilylethyl) cyclotetrasiloxane (cyclic monomer) and three kinds of linear siloxane monomers. As the linear siloxane chain length increases in the CSSQ precursors, the compatibility between the CSSQ precursor and tCD molecules improved due to the chain flexibility of the precursor. Moreover, the mechanical strength of the CSSQ precursor (4ST37) containing linear tetrasiloxane was the best among the prepared precursors. The enhancement of mechanical property might also be attributed to the content of Si-OH groups as well as the chain flexibility, which could help the crosslinking reaction of Si-OH groups in the film curing process.     

Structural and magnetic properties of nano-crystalline FeCoNiN thin films

Iron cobalt nickel nitride (FeCoNiN) thin films are prepared by sol-gel spin coating route. The structural, magnetic and surface properties of the thin films are evaluated. The crystalline nature of thin films was enhanced upon annealing, leading to increased crystallite size. The X-ray diffraction shows mixed phases with crystallite size in the range of 20–26.93 nm. Thin films show ferromagnetism at room temperature. Coercivity and saturation magnetization are in the range of 642–716 Oe and 2.5–7.5 emu/cm³ respectively. Both coercivity and saturation magnetization increased with annealing of thin films. Magnetic properties are related to the crystallinity of thin films. The increase in crystallite size results into an increase of magnetic properties. Rectangular shaped particles are seen on the surface of thin films. The same type of grains can be seen on the surface of thin films which confirmed the formation of FeCoNiN as predicted by XRD. These novel thin films might be used in memory devices and optoelectronic applications.     

Optical constants,dispersion energy parameters and dielectric properties of ultra-smooth nanocrystalline BiVO4 thin films prepared by rf-magnetron sputtering

BiVO₄ thin films have been prepared through radio frequency (rf) magnetron sputtering of a pre-fabricated BiVO₄ target on ITO coated glass (ITO-glass) substrate and bare glass substrates. BiVO₄ target material was prepared through solid-state reaction method by heating Bi₂O₃ and V₂O₅ mixture at 800 °C for 8 h. The films were characterized by X-ray diffraction, UV–Vis spectroscopy, LCR meter, field emission scanning electron microscopy, transmission electron microscopy and atomic force microscopy. BiVO₄ thin films deposited on the ITO-glass substrate are much smoother compared to the thin films prepared on bare glass substrate. The rms surface roughness calculated from the AFM images comes out to be 0.74 nm and 4.2 nm for the films deposited on the ITO-glass substrate and bare glass substrate for the deposition time 150 min respectively. Optical constants and energy dispersion parameters of these extra-smooth BiVO₄ thin films have been investigated in detail. Dielectric properties of the BiVO₄ thin films on ITO-glass substrate were also investigated. The frequency dependence of dielectric constant of the BiVO₄ thin films has been measured in the frequency range from 20 Hz to 2 MHz. It was found that the dielectric constant increased from 145 to 343 at 20 Hz as the film thickness increased from 90 nm to 145 nm (deposition time increased from 60 min to 150 min). It shows higher dielectric constant compared to the literature value of BiVO₄.     

Control of microstructure and functional properties of PZT thin films via UV assisted pyrolysis

The influence of ultraviolet (UV) light during pyrolysis of sol-gel fabricated Pb(Zr_0.52Ti_0.48)O₃ thin films on (111)Pt/Ti/SiO₂/Si substrates has been investigated. The UV treated films show a homogeneous fine grain structure with (100) preferential orientation, whereas a bimodal grain structure and (111) preferential orientation were found for the untreated film. This is explained in terms of specific template layers formed during pyrolysis. The ferroelectric, dielectric and piezoelectric properties are also reported for both films. It is shown that while the ferroelectric properties are higher for the (111) films, the (100) films show better dielectric and piezoelectric properties with an effective piezoelectric coefficient, d _33eff, of 183 pm/V vs. 101.8 pm/V for the (111) films.     

Physicochemical characterisation of lead titanate solutions applied to the processing of thin films

A new sol-gel method, in which dihydroxy alcohols are used as solvents, is described for the preparation of lead titanate thin films. Infrared spectroscopy and measurements of viscosity are used to study the reaction mechanisms involved in the formation of polymerized solutions. Crack-free lead titanate layers with thickness 0.5 µm are obtained from these solutions, on Pt/TiO₂/Si substrates, by spin-coating and subsequent heat treatments. The formation of the perovskite and the microstructure of these films are monitored by X-ray diffraction, thermogravimetry analysis, differential thermal analysis and scanning electron microscopy.     

Chain orientation and anisotropies in optical and dielectric properties in thin films of stiff polyimides

Thin films of poly(p-phenylene biphenyltetracarboximide) (BPDA-PDA), prepared by thermal imidization of the precursor poly(amic acid) on substrates, have been investigated by optical waveguide, ultraviolet-visible (UV-VIS), infrared (IR), and dielectric spectroscopies. The polyimide films exhibit an extraordinarily large anisotropy in the refractive indices with the in-plane index n_∥ = 1.806 and the out-of-plane index n_⊥ = 1.589 at 1064 nm wavelength. No discernible effect of the film thickness on this optical anisotropy is found between films of ca. 2.1 and ca. 7.8 μm thickness. This large birefringence is attributed to the preferential orientation of the biphenyltetracarboximide moieties with their planes parallel to the film surface, coupled with the strong preference of BPDA-PDA chains to align along the film plane. The frequency dispersion of the in-plane refractive index n_∥ is consistent with the results calculated by the Lorentz–Lorenz equation from the UV-visible spectrum exhibiting several absorption bands in the 170–500 nm region. The contribution from the IR absorption in the range 7000–400 cm,^?1 computed by the Spitzer-Kleinmann dispersion relations from the measured spectra, adds ca. 0.046 to the in-plane refractive index n_∥. Tilt-angle–dependent polarized IR results indicate nearly the same increase for the out-of-plane index n_⊥. Application of the Maxwell relation then leads to the out-of-plane dielectric constant ε^⊥ ? 2.7 at 1.2 × 10¹³ Hz, as compared with the measured value of ca. 3.0 at 10⁶ Hz. Assuming this small difference to remain the same for the in-plane dielectric constants ε_∥, we obtain a very large anisotropy in the dielectric properties of these polyimide films with the estimated in-plane dielectric constant ε_∥ ? 3.4 at 1.2 × 10¹³ Hz, and ε_∥ ? 3.7 at 10⁶ Hz. © 1992 John Wiley & Sons, Inc.     

Hydrodynamics of dielectric fluid films

We introduce a general hydrodynamic model to study the stability of lipid films against thermal fluctuations. As one novel aspect the model accounts before all for a complete intrinsic surface rheology of the film interfaces. Thus the rheological behaviour of the surface adsorbed lipids is modelled which screen the hydrophobic film interior against the aqueous exterior. For coloured films we demonstrate first the influence of electrical forces on the dynamics and film stability. For that we perform a linear stability analysis on a simplified mechanically symmetric film with i) symmetric surface charge distribution and ii) linear electric potential drop across the film. Based on the complete film model we then categorize the complete set of solutions of the linearized equations of motion and we study the growth rates of unstable film modes. Finally we discuss the stability properties of a black film after introducing a repulsive mechanism due to the steric hindrance of the interfacial lipids.     

IR spectroelectrochemical studies of Fe2V4O13, FeVO4 and InVO4 thin films obtained via sol-gel synthesis

In this paper we generalize the IR spectroscopic properties of M³⁺VO₄ (M=Fe, In) orthovanadate and Fe₂V₄O₁₃ films. The films were prepared using the sol-gel synthesis route from M³⁺ nitrates and vanadium oxoisopropoxide. The vibrational bands in the IR absorbance spectra of the films are classified in terms of terminal V-O stretching (1050–880 cm^–1), bridging V-O^...Fe and V^...O^...Fe stretching (880–550 cm^–1), mixed V-O-V deformations and Fe-O stretching (<550 cm^–1) modes. Ex situ IR spectra of films were measured after consecutive charging/discharging to various intercalation coefficients x and correlated to the current peaks in the cyclic voltammetry curves measured in 1 M LiClO₄/propylene carbonate electrolyte. We classified the ex situ IR spectra of charged/discharged films according to their vibrational band changes. The results reveal that, for small values of the intercalation coefficient, crystalline FeVO₄, InVO₄ and Fe₂V₄O₁₃ films exhibit a simultaneous decrease in the intensity of all IR bands while the band frequencies remain unaffected. For the higher intercalation levels, IR mode frequencies are shifted, signaling the presence of reduced vanadium. Further charging leads to an amorphization of the film structure, which was established from the similarity of the IR spectra of charged films with those of amorphous films prepared at lower annealing temperatures. The results confirm that ex situ IR spectroelectrochemical measurement is an effective way to assess the structural changes in films with different levels of intercalation. Electronic Publication     

Ferroelectric and dielectric behaviour of Bi0.92La0.08FeO3 multiferroic thin films prepared by soft chemistry route

Bi_0.92La_0.08FeO₃ (BLFO) thin films were grown on platine substrates by the soft chemical route. Ferroelectric and dielectric behaviors of BLFO films deposited by spin-coating technique and annealed at 773 K for 2 h in air atmosphere were explained. BLFO thin films obtained presents a rhombohedral structure. The BLFO films present dielectric and ferroelectric behaviors with dielectric permittivity and dielectric loss of approximately 81 and 0.0144 at 1 kHz. The Au/BLFO/Pt capacitor shows a hysteresis loop with remnant polarization of 20.6 μC/cm² and coercive field of 53.88 kV/cm. The polarization switching and the fatigue behavior of the BLFO films were significantly enhanced.     

Dielectric and optical properties of BaTiO<Subscript>3</Subscript> thin films prepared by low-temperature process

Barium titanate (BaTiO₃) thin films have been prepared by low temperature processing on Pt/Ti/SiO₂/Si substrates using sol-gel-hydrothermal (SGHT) technique, which combined the conventional sol-gel process and hydrothermal method. X-ray diffraction analysis showed that the barium titanate thin films are polycrystalline. As-reacted barium titanate films grown on Pt(111)/Ti/SiO₂/Si(100) substrates had a dielectric constant (ε) and loss tangent (tanδ) of 80 and 0.05 at 1 MHz, respectively. The optical constants including refractive index n, extinction coefficient k, and absorption coefficient α of the barium titanate thin films in the wavelength range of 2.5–12.6 μm were obtained by infrared spectroscopic ellipsometry.     

Defect and transport properties of nanocrystalline ceramics and thin films

This paper presents an overview of recent research on the defect and transport properties of nanocrystalline ionic and mixed conducting ceramics and thin films. In the first part, some basic concepts and properties of boundaries are reviewed, including diffusion, segregation, and space charge regions. Experimental data on nanoceramics and thin films made from pure and doped CeO₂, TiO₂, ZrO₂, and CaF₂ are presented and discussed in the second part; opportunities for future work on this topic are outlined. Electronic Publication     

An effect of N ion bombardment on the properties of CdTe thin films

E-beam evaporated CdTe thin films were processed with N⁺ ion bombardment as in situ process. The N⁺ ion glow was generated using simple Multipurpose Al probe instead of conventional plasma sources. The prepared films were identified as nano crystalline using XRD analysis. High N⁺ ion fluence helped to grow (3 1 1) oriented CdTe thin films instead of (2 2 0) and (1 1 1). The observed results revealed the effect of N⁺ ion fluence on the structural parameters like lattice parameter, d space value, crystalline size, dislocation density, micro strain etc. The observed optical band gap values lie in between 1.47 and 1.77 eV. The effect of N⁺ ion bombardment on optical properties was also reported. Noticeable change in electrical and surface properties was also observed. The observed value shows the reproducibility as <1% and it is suggested that the N⁺ ion plasma was effectively utilized to modify the structural, optical and surface properties as in situ.