Transport coefficients of titanium-doped Sb2Te3 single crystals

Titanium-doped single crystals (c_Ti=0-2×10²⁰ atoms cm⁻³) were prepared from the elements Sb, Ti, and Te of 5 N purity by a modified Bridgman method. The obtained crystals were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity in the temperature range of 3-300 K. It was observed that with an increasing Ti content in the samples the electrical resistivity, the Hall coefficient and the Seebeck coefficient increase. This means that the incorporation of Ti atoms into the Sb₂Te₃ crystal structure results in a decrease in the concentration of holes in the doped crystals. For the explanation of the observed effect a model of defects in the crystals is proposed. The data of the lattice thermal conductivity were fitted well assuming that phonons scatter on boundaries, point defects, charge carriers, and other phonons.     

Structure and high-temperature thermoelectric properties of SrAl2Si2

Single crystals of SrAl₂Si₂ were synthesized by reaction of the elements in an aluminum flux at 1000 °C. SrAl₂Si₂ is isostructural to CaAl₂Si₂ and crystallizes in the hexagonal space group P-3m1 (90 K, a=4.1834 (2), c=7.4104 (2) Å, Z=1, R1=0.0156, wR2=0.0308). Thermal analysis shows that the compound melts at ∼1020 °C. Low-temperature resistivity on single crystals along the c-axis shows metallic behavior with room temperature resistivity value of ∼7.5 mΩ cm. High-temperature Seebeck, resistivity, and thermal conductivity measurements were made on hot-pressed pellets. The Seebeck coefficient shows negative values in entire temperature range decreasing from ∼−78 μV K⁻¹ at room temperature to −34 μV K⁻¹ at 1173 K. Seebeck coefficients are negative indicating n-type behavior; however, the temperature dependence is consistent with contribution from minority p-type carriers as well. The lattice contribution to the thermal conductivity is higher than for clathrate structures containing Al and Si, approximately 50 mW cm⁻¹ K, and contributes to the overall low zT for this compound.     

Transport properties of undoped and Br-doped PbTe sintered at high-temperature and pressure ≥4.0 GPa

The thermoelectric properties of nominally undoped PbTe and Br doped PbTe materials sintered at high-pressure and high-temperature (HPHT) have been studied. All samples show n-type semiconducting behavior with negative thermopower. For undoped PbTe, four different HPHT treatments were performed at pressures between 4.0 and 6.5 GPa. PbTe doped with Br at 0.5, 1.0, 2.0, 3.0×10¹⁹ cm⁻³ was HPHT treated at 4.0 GPa and 1045 °C. As the dopant concentration increases, the absolute thermopower decreases, thermal conductivity increases, and electrical resistivity decreases. At a nominal dopant concentration of 1.0×10¹⁹ cm⁻³, carrier mobility of 1165 cm²/V s and dimensionless thermoelectric figure-of-merit, ZT, of around 0.27 at 300 K were obtained. These results demonstrate that HPHT post-processing is a viable and controllable way of tuning the thermoelectric properties of PbTe-based materials.     

Thermoelectric properties of polycrystalline La1−xSrxCoO3

Thermoelectric properties of polycrystalline La_1−xSr_xCoO₃, where Sr²⁺ is substituted in La³⁺ site in perovskite-type LaCoO₃, have been investigated. Sr-doping increases the electrical conductivity (σ) of La_1−xSr_xCoO₃, and also decreases the Seebeck coefficient (S) for 0.01?x?0.40. A Hall coefficient measurement reveals that the increase in electrical conductivity arises from increases in both carrier concentration and the Hall mobility. The decrease in the Seebeck coefficient is caused by a decrease in carrier effective mass as well as increase in carrier concentration. The highest power factor (σS²) is 3.7×10⁻⁴ W m⁻¹ K⁻² at 250 K for x=0.10. The thermal conductivity (κ) is about 2 W m⁻¹ K⁻¹ at 300 K for 0?x?0.04, and increases for x?0.05 because of an increase in heat transport by conductive carrier. The thermoelectric properties of La_1−xSr_xCoO₃ are improved by Sr-doping, and the figure of merit (Z=σS² κ⁻¹) reaches 1.6×10⁻⁴ K⁻¹ for x=0.06 at 300 K (ZT=0.048). For heavily Sr-doped samples, the thermoelectric properties diminish mainly because of the decrease in the Seebeck coefficient and the increase in thermal conductivity.     

Anomalous charge transport in CeB6

The comprehensive study of conductivity σ, Hall coefficient R_H and Seebeck coefficient S has been carried out on high-quality single crystals of CeB₆ in a wide range of temperatures 1.8-300 K. An anomalous behavior of all transport characteristics (σ, R_H, S) was found for the first time in the vicinity of T^*≈80 K. The strong decrease of conductivity σ as well as the unusual asymptotic behavior of Seebeck coefficient S(T)∼−ln T observed below T^* allowed us to conclude in favor of crossover between different regimes of charge transport in CeB₆. The pronounced change of Hall mobility μ_H, which diminishes from the maximum value of 20 cm²/(V s) at T^* to the values of ∼6 cm²/(V s) at T∼10 K, seems to be attributed to the strong enhancement of charge carriers scattering due to fast spin fluctuations on Ce-sites. The low-temperature anomalies of the charge transport characteristics are compared with the predictions of the Kondo-lattice model.     

The ionic conductivity and local environment of cations in Bi9ReO17

The influence of temperature on the structure of Bi₉ReO₁₇ has been investigated using differential thermal analysis, variable temperature X-ray diffraction and neutron powder diffraction. The material undergoes an order-disorder transition at ∼1000 K on heating, to form a fluorite-related phase. The local environments of the cations in fully ordered Bi₉ReO₁₇ have been investigated by Bi L_III- and Re L_III-edge extended X-ray absorption fine structure (EXAFS) measurements to complement the neutron powder diffraction information. Whereas rhenium displays regular tetrahedral coordination, all bismuth sites show coordination geometries which reflect the importance of a stereochemically active lone pair of electrons. Because of the wide range of Bi-O distances, EXAFS data are similar to those observed for disordered structures, and are dominated by the shorter Bi-O bonds. Ionic conductivity measurements indicate that ordered Bi₉ReO₁₇ exhibits reasonably high oxide ion conductivity, corresponding to 2.9×10⁻⁵ Ω⁻¹ cm^-1 at 673 K, whereas the disordered form shows higher oxide ion conductivity (9.1×10⁻⁴ Ω⁻¹ cm⁻¹ at 673 K).     

Non-ohmic electrical conductivity of β-rhombohedral boron in high electric fields

The low-field conductivity of β-rhombohedral boron follows Mott's law of variable-range hopping. Recent improvements in the energy band scheme attribute the hopping centers to specific, partly occupied states in the band gap, evoked by structural defects, in particular unoccupied B(13) sites. Band type conductivity is also possible, after valence electrons have been excited into unoccupied gap states. An experimental tool to gain an insight into the transport mechanism of semiconductors is the field-dependence of the electrical conductivity. For the interpretation of such experiments various theories are at disposal: the classical model of hot electrons, the Poole-Frenkel model, models of non-thermally activated hopping by Mott and Shklovskii, the Model of the field-dependence of small polarons mobility, the model of space-charge-limited currents. New measurements of the electrical conductivity in the temperature range 187-303 K at field strength up to 8 k V cm⁻¹ are presented and discussed according to the above-mentioned theories together with a critical review of the previous measurements of other authors. Three ranges are to be distinguished. (i) Up to about 200 V cm⁻¹: ohmic behavior; (ii) between about 200 V cm⁻¹ and about 20 kV cm⁻¹: non-ohmic behavior with a temperature-dependent field-dependence; (iii) above the “electrical breakdown” at about 20 kV cm⁻¹: non-ohmic behavior with I:E² independent of temperature.     

p-Type thermoelectric properties of the oxygen-deficient perovskite Ca2Fe2O5 in the brownmillerite structure

Brownmillerite calcium ferrite was synthesized in air at 1573 K and thermoelectric properties (direct current electrical conductivity σ, Seebeck coefficient α, thermal conductivity κ, thermal expansion α_L) were measured from 373 to 1050 K in air. Seebeck coefficient was positive over all temperatures indicating conduction by holes, and electrical properties were continuous through the Pnma-Imma phase transition. Based on the thermopower and conductivity activation energies as well as estimated mobility, polaron hopping conduction was found to dominate charge transport. The low electrical conductivity, <1 S/cm, limits the power factor (α²σ), and thus the figure of merit for thermoelectric applications. The thermal conductivity values of ∼2 W/mK and their similarity to Ruddlesden-Popper phase implies the potential of the alternating tetrahedral and octahedral layers to limit phonon propagation through brownmillerite structures. Bulk linear coefficient of thermal expansion (∼14×10⁻⁶ K⁻¹) was calculated from volume data based on high-temperature in situ X-ray powder diffraction, and shows the greatest expansion perpendicular to the alternating layers.     

The preparation and thermoelectric properties of molten salt electrodeposited boron wafers

We have prepared electrodeposited boron wafer by molten salts with KBF₄-KF at 680°C using graphite crucible for anode and silicon wafer and nickel plate for cathodes. Experiments were performed by various molar ratios KBF₄/KF and current densities. Amorphous p-type boron wafers with purity 87% was deposited on nickel plate for 1 h. Thermal diffusivity by ring-flash method and heat capacity by DSC method produced thermal conductivity showing amorphous behavior in the entire temperature range. The systematical results on thermoelectric properties were obtained for the wafers prepared with KBF₄-KF (66-34 mol%) under various current densities in the range 1-2 A/cm². The temperature dependencies of electrical conductivity showed thermal activated type with activation energy of 0.5 eV. Thermoelectric power tended to increase with increasing temperature up to high temperatures with high values of (1-10) mV/K. Thermoelectric figure-of-merit was 10⁻⁴/K at high temperatures. Estimated efficiency of thermoelectric energy conversion would be calculated to be 4-5%.     

p-Type electron transport in La1−xSrxFeO3−δ at high temperatures

Electrical conductivity, thermopower and oxygen content were measured for La_1−xSr_xFeO_3−δ (x=0.2, 0.5, 0.9) within the oxygen partial pressure range 10⁻⁴-0.5 atm and at temperatures 750-950 °C. The dominating charge carriers under these experimental conditions are electron holes. The results of oxygen nonstoichiometry measurements are used to estimate the concentration of holes and to analyze data on conductivity and thermopower. The changes in thermopower are described by the model assuming that the number of sites accessible for migration of holes is independent on oxygen content. The mobility of electron holes is calculated, and it is found to be virtually independent on temperature in the compositions with x<0.5 while compositions with x>0.5 exhibit thermally activated mobility and mobility values about 0.1 cm² V⁻¹ s⁻¹ or smaller. It is suggested that the main contribution to the composition dependent variations in electron hole mobility are associated with Coulomb interactions at small x's, whereas at high degrees of doping the mobility of holes is most strongly affected by the increasing amount of oxygen vacancies.     

High temperature enthalpy and heat capacity of GaN

The heat capacity and the heat content of gallium nitride were measured by calvet calorimetry (320-570 K) and by drop calorimetry (670-1270 K), respectively. The temperature dependence of the heat capacity in the form C_pm=49.552+5.440×10⁻³T−2.190×10⁶T⁻²+2.460×10⁸T⁻³ was derived by the least squares method. Furthermore, thermodynamic functions calculated on the basis of our experimental results and literature data on the molar entropy and the heat of formation of GaN are given.     

Conductivity and thermal behavior of proton conducting polymer electrolyte based on poly (N-vinyl pyrrolidone)

The polymer electrolytes based on poly N-vinyl pyrrolidone (PVP) and ammonium thiocyanate (NH₄SCN) with different compositions have been prepared by solution casting technique. The amorphous nature of the polymer electrolytes has been confirmed by XRD analysis. The shift in T_g values and the melting temperatures of the PVP-NH₄SCN electrolytes shown by DSC thermo-grams indicate an interaction between the polymer and the salt. The dependence of T_g and conductivity upon salt concentration have been discussed. The conductivity analysis shows that the 20 mol% ammonium thiocyanate doped polymer electrolyte exhibit high ionic conductivity and it has been found to be 1.7 × 10⁻⁴ S cm⁻¹, at room temperature. The conductivity values follow the Arrhenius equation and the activation energy for 20 mol% ammonium thiocyanate doped polymer electrolyte has been found to be 0.52 eV.     

Thermal properties of the pyrochlore, Y2Ti2O7

The thermal conductivity and heat capacity of high-purity single crystals of yttrium titanate, Y₂Ti₂O_7, have been determined over the temperature range 2 K?T?300 K. The experimental heat capacity is in very good agreement with an analysis based on three acoustic modes per unit cell (with the Debye characteristic temperature, θ_D, of ca. 970 K) and an assignment of the remaining 63 optic modes, as well as a correction for C_p−C_v. From the integrated heat capacity data, the enthalpy and entropy relative to absolute zero, are, respectively, H(T=298.15 K)−H₀=34.69 kJ mol⁻¹ and S(T=298.15 K)−S₀=211.2 J K⁻¹ mol⁻¹. The thermal conductivity shows a peak at ca. θ_D/50, characteristic of a highly purified crystal in which the phonon mean free path is about 10 μm in the defect/boundary low-temperature limit. The room-temperature thermal conductivity of Y₂Ti₂O₇ is 2.8 W m⁻¹ K⁻¹, close to the calculated theoretical thermal conductivity, κ_min, for fully coupled phonons at high temperatures.     

Deposition and investigation of lanthanum-cerium hexaboride thin films

Thin films of lanthanum-cerium hexaboride, the promising thermoelectric material for low-temperature applications, are deposited on various substrates by the electron-beam evaporation, pulsed laser deposition and magnetron sputtering. The influence of the deposition conditions on the films X-ray characteristics, composition, microstructure and physical properties, such as the resistivity and Seebeck coefficient, is studied. The preferred (100) orientation of all films is obtained from XRD traces. In the range of 780-800 °C deposition temperature the highest intensity of diffractions peaks and the highest degree of the preferred orientation are observed. The temperature dependence of the resistivity and the Seebeck coefficient of films are investigated in the temperature range of 4-300 K. The features appropriate to Kondo effect in the dependences ρ(T) and S(T) are detected at temperatures below 20 K. Interplay between the value of the Seebeck coefficient, metallic parameters and Kondo scattering of investigated films is discussed.     

On the electronic and structural properties of aluminum diboride Al0.9B2

Single crystals of aluminum diboride (space group P6/mmm, No. 191) a=3.0050(1) Å, c=3.2537 (8)  Å; Z=1) were prepared by the aluminum flux method. Crystal structure refinement shows defects at the aluminum site and resulted in composition Al_0.894(9)B₂≈Al_0.9B₂. The defect structure model is confirmed by the measured mass density ρ_exp=2.9(1) g/cm³ in comparison with a calculated value ρ_x=3.17 g/cm³ for full occupancy of the aluminum position. The results of ¹¹B NMR measurements support the defect model and are in agreement with the structure obtained by X-ray diffraction methods. Electrical resistivity measured on a single crystal parallel to its hexagonal basal plane with ρ(300 K)−ρ(2 K)=2.35 μΩ cm shows temperature dependence like a typical metal. Charge is dominantly carried by holes (Hall-coefficient R=+2×10⁻¹¹ m/C). Respective, p-type conductivity is confirmed by theoretical calculations. Chemical bonding in aluminum diboride is discussed using the electron localization function.     

Crystal structure, characterization and thermoelectric properties of the type-I clathrate Ba8−ySryAl14Si32 (0.6≤y≤1.3) prepared by aluminum flux

The title compound was prepared as single crystals using an aluminum flux technique. Single crystal and powder X-ray diffraction indicate that this composition crystallizes in the clathrate type-I structure, space group Pm3?n. Electron microprobe characterization indicates the composition to be Ba_8−ySr_yAl_14.2(2)Si_31.8(2) (0.77<y<1.3). Single-crystal X-ray diffraction data (90 and 12 K) were refined with the Al content fixed at the microprobe value (12 K data: R₁=0.0233, wR₂=0.0441) on a crystal of compositions Ba. The Sr atom preferentially occupies the 2a position; mixed Al/Si occupancy was found on all framework sites. These refinements are consistent with a fully occupied framework and nearly fully occupied cation guest sites as found by microprobe analysis. Temperature dependent electrical resistivity and thermal conductivity have been measured from room temperature to 1200 K on a hot-pressed pellet. Electrical resistivity reveals metallic behavior. The negative Seebeck coefficient indicates transport processes dominated by electrons as carriers. Thermal conductivity is between 22 and 25 mW/cm K. The sample shows n-type conductivity with a maximum figure of merit, zT of 0.3 at 1200 K. A single parabolic band model predicts a five-fold increase in zT at 800 K if carrier concentration is lowered.     

Effects of substrate temperature on properties of ITO-ZnO composition spread films fabricated by combinatorial RF magnetron sputtering

We have fabricated ITO-ZnO composition spread films to investigate the effects of substrate temperature on their electrical and optical properties by using combinatorial RF magnetron sputtering. It turned out by X-ray measurement that the film with zinc contents above 16.0 at% [Zn/(In+Zn+Sn)] showed amorphous phase regardless of substrate temperature. The amorphous ITO-ZnO film had lower resistivity than polycrystalline films. When the films were deposited at 250 °C, the minimum resistivity of 3.0×10⁻⁴ Ω cm was obtained with the zinc contents of 16.0 at%. The indium content could be reduced as high as ~30 at% compared to that of ITO for the films having similar resistivity (~10⁻⁴ Ω cm). However, a drastic increase of resistivity was observed for the ITO-ZnO films deposited at 350 °C, having zinc contents below 15.2 at%.     

Facile synthesis of PbTe nanoparticles and thin films in alkaline aqueous solution at room temperature

A novel, simple, and cost-effective route to PbTe nanoparticles and films is reported in this paper. The PbTe nanoparticles and films are fabricated by a chemical bath method, at room temperature and ambient pressure, using conventional chemicals as starting materials. The average grain size of the nanoparticles collected at the bottom of the bath is ∼25 nm. The film deposited on glass substrate is dense, smooth, and uniform with silver gray metallic luster. The film exhibits p-type conduction and has a moderate Seebeck coefficient value (∼147 μV K⁻¹) and low electrical conductivity (∼0.017 S cm⁻¹). The formation mechanism of the PbTe nanoparticles and films is proposed.     

Heat capacity and Raman spectra of Cr(C5H7O2)3 at low temperature

The heat capacity of Cr(C₅H₇O₂)₃ has been measured by the adiabatic method within the temperature range 5-320 K. An anomaly with a maximum at ∼60 K has been discovered which points to the phase transformation of the compound. Anomalous contributions to entropy and enthalpy have been revealed. The thermodynamic functions (entropy, enthalpy and reduced Gibbs energy) at 298.15 K have been calculated using the obtained experimental heat capacity data. The Raman spectra have been measured in the frequency range 60-400 cm⁻¹ and in the temperature range 5-220 K. It has been discovered that a new line (109 cm⁻¹) appears at ∼60 K. The nature of these peculiarities in heat capacity and in Raman spectra is discussed.     

High-temperature thermoelectric studies of A11Sb10 (A=Yb, Ca)

Large samples (6-8 g) of Yb₁₁Sb₁₀ and Ca₁₁Sb₁₀ have been synthesized using a high-temperature (1275-1375 K) flux method. These compounds are isostructural to Ho₁₁Ge₁₀, crystallizing in the body-centered, tetragonal unit cell, space group I4/mmm, with Z=4. The structure consists of antimony dumbbells and squares, reminiscent of Zn₄Sb₃ and filled Skutterudite (e.g., LaFe₄Sb₁₂) structures. In addition, these structures can be considered Zintl compounds; valence precise semiconductors with ionic contributions to the bonding. Differential scanning calorimetry (DSC), thermogravimetry (TG), resistivity (ρ), Seebeck coefficient (α), thermal conductivity (κ), and thermoelectric figure of merit (zT) from room temperature to at minimum 975 K are presented for A₁₁Sb₁₀ (A=Yb, Ca). DSC/TG were measured to 1400 K and reveal the stability of these compounds to ∼1200 K. Both A₁₁Sb₁₀ (A=Yb, Ca) materials exhibit remarkably low lattice thermal conductivity (∼10 mW/cm K for both Yb₁₁Sb₁₀ and Ca₁₁Sb₁₀) that can be attributed to the complex crystal structure. Yb₁₁Sb₁₀ is a poor metal with relatively low resistivity (1.4 mΩ cm at 300 K), while Ca₁₁Sb₁₀ is a semiconductor suggesting that a gradual metal-insulator transition may be possible from a Ca_11−xYb_xSb₁₀ solid solution. The low values and the temperature dependence of the Seebeck coefficients for both compounds suggest that bipolar conduction produces a compensated Seebeck coefficient and consequently a low zT.