Synthesis and characterization of quaternary chalcogenides InSn2Bi3Se8 and In0.2Sn6Bi1.8Se9

Quaternary chalcogenides InSn₂Bi₃Se₈ and In_0.2Sn₆Bi_1.8Se₉ were synthesized on direct combination of their elements in stoichiometric ratios at T>800 °C under vacuum. Their structures were determined with X-ray diffraction of single crystals. InSn₂Bi₃Se₈ crystallizes in monoclinic space group C2/m (No. 12) with a=13.557(3) Å, b=4.1299(8) Å, c=15.252(3) Å, β=115.73(3)°, V=769.3(3) Å³, Z=2, and R₁/wR₂/GOF=0.0206/0.0497/1.092; In_0.2Sn₆Bi_1.8Se₉ crystallizes in orthorhombic space group Cmc2₁ (No. 36) with a=4.1810(8) Å, b=13.799(3) Å, c=31.953(6) Å, V=1843.4(6) Å³, Z=4, and R₁/wR₂/GOF=0.0966/0.2327/1.12. InSn₂Bi₃Se₈ and In_0.2Sn₆Bi_1.8Se₉ are isostructural with CuBi₅S₈ and Bi₂Pb₆S₉ phases, respectively. The structures of InSn₂Bi₃Se₈ and In_0.2Sn₆Bi_1.8Se₉ feature a three-dimensional framework containing slabs of NaCl-(311) type with varied thicknesses. Calculations of the electronic structure and measurements of electrical conductivity indicate that these materials are semiconductors with narrow band gaps. Both compounds show n-type semiconducting properties with Seebeck coefficients −270 and −230 μV/K at 300 K for InSn₂Bi₃Se₈ and In_0.2Sn₆Bi_1.8Se₉, respectively.     

Quaternary selenostannates Na2−xGa2−xSn1+xSe6 and AGaSnSe4 (A=K, Rb, and Cs) through rapid cooling of melts. Kinetics versus thermodynamics in the polymorphism of AGaSnSe4

The quaternary alkali-metal gallium selenostannates, Na_2−xGa_2−xSn_1+xSe₆ and AGaSnSe₄ (A=K, Rb, and Cs), were synthesized by reacting alkali-metal selenide, Ga, Sn, and Se with a flame melting-rapid cooling method. Na_2−xGa_2−xSn_1+xSe₆ crystallizes in the non-centrosymmetric space group C2 with cell constants a=13.308(3) Å, b=7.594(2) Å, c=13.842(3) Å, β=118.730(4)°, V=1226.7(5) Å³. α-KGaSnSe₄ crystallizes in the tetragonal space group I4/mcm with a=8.186(5) Å and c=6.403(5) Å, V=429.1(5) Å³. β-KGaSnSe₄ crystallizes in the space group P2₁/c with cell constants a=7.490(2) Å, b=12.578(3) Å, c=18.306(5) Å, β=98.653(5)°, V=1705.0(8) Å³. The unit cell of isostructural RbGaSnSe₄ is a=7.567(2) Å, b=12.656(3) Å, c=18.277(4) Å, β=95.924(4)°, V=1741.1(7) Å³. CsGaSnSe₄ crystallizes in the orthorhombic space group Pmcn with a=7.679(2) Å, b=12.655(3) Å, c=18.278(5) Å, V=1776.1(8) Å³. The structure of Na_2−xGa_2−xSn_1+xSe₆ consists of a polar three-dimensional network of trimeric (Sn,Ga)₃Se₉ units with Na atoms located in tunnels. The AGaSnSe₄ possess layered structures. The compounds show nearly the same Raman spectral features, except for Na_2−xGa_2−xSn_1+xSe₆. Optical band gaps, determined from UV-Vis spectroscopy, range from 1.50 eV in Na_2−xGa_2−xSn_1+xSe₆ to 1.97 eV in CsGaSnSe₄. Cooling of the melts of KGaSnSe₄ and RbGaSnSe₄ produces only kinetically stable products. The thermodynamically stable product is accessible under extended annealing, which leads to the so-called γ-form (BaGa₂S₄-type) of these compounds.     

Crystal structure and physical properties of the quaternary manganese-bearing pavonite homologue Mn1.34Sn6.66Bi8Se20

The quaternary manganese tin bismuth selenide, Mn_1.34Sn_6.66Bi₈Se₂₀ was synthesized by combining constituent elements at 723 K. Single crystal structure determination revealed that Mn_1.34Sn_6.66Bi₈Se₂₀ is isostructural to the mineral pavonite, AgBi₃S₅, crystallizing in the monoclinic space group C2/m (#12) with a=13.648(3) Å; b=4.175(1) Å; c=17.463(4) Å; β=93.42(3)°. In the structure, two kinds of layered modules, denoted A and B, alternate along [0 0 1]. Module A consists of paired chains of face-sharing monocapped trigonal prisms (around Bi/Sn) separated by a single chain of edge-sharing octahedra (around Mn/Sn). Module B represents a NaCl-type fragment of edge-sharing [(Bi/Sn)Se₆] octahedra. Mn_1.34Sn_6.66Bi₈Se₂₀ is an n-type narrow gap semiconductor with E_g∼0.29 eV. At 300 K, thermopower, electrical conductivity and lattice thermal conductivity values are −123 μV/K, 47 S/cm and 0.6 W/m K, respectively. Mn_1.34Sn_6.66Bi₈Se₂₀ is paramagnetic at high temperatures and undergoes antiferromagnetic transition at T_N=10 K.     

Bi2−xLnxWO6: a novel layered structure type related to the Aurivillius phases

The crystal structure of Bi_0.7Yb_1.3WO₆ (a representative of the isomorphous series Bi_2−xLn_xWO₆; 0.3<x<1.3, for most lanthanides) has been determined. Contrary to previous suggestions, this structure type (space group A2; a=8.1070(3) Å, b=3.7048(2) Å, c=15.8379(8) Å, β=103.548(4)°) contains layers of stoichiometry WO₄, containing WO₆ octahedra sharing both edges and corners. These layers alternate with fluorite-like (Bi/Yb)₂O₂ sheets; this is a novel and unexpected arrangement and contrasts dramatically with the purely corner-sharing octahedral WO₄-layer in the parent Aurivillius phase Bi₂WO₆.     

Synthesis and optical absorption property of the Zn2TixSn1−xO4 (0?x?1) solid solutions

Zn₂Ti_xSn_1−xO₄ (0?x?1) solid solutions with an inverse spinel structure (Fd3m) were synthesized by solid-state reactions at 1300°C of the stoichiometric mixtures of ZnO, TiO₂ and SnO₂. X-ray diffraction, thermogravimetric and differential thermal analyses, scanning electron microscopy, transmission electron microscopy and BET specific surface area measurements were used to gain insights into the solid-state reactions and phase transformation of the system. Optical absorption property of the Zn₂Ti_xSn_1−xO₄ (0?x?1) solid solutions was studied with the ultraviolet-visible diffuse reflectance spectroscopy (UV-Vis DRS). The Zn₂Ti_xSn_1−xO₄ (0?x?1) solid solutions showed optical absorptions of the semiconductors in the near ultraviolet region; the adsorption band shifts with the composition of the solid solution.     

Series of compositions Bi2(M′xM1−x)4O9 (M′, M=Al, Ga, Fe; 0≤x≤1) with mullite-type crystal structure: Synthesis, characterization and O/O exchange experiment

Series of compositions Bi₂(M′_xM_1−x)₄O₉ with x=0.0, 0.1,…, 1.0 and M′/M=Ga/Al, Fe/Al and Fe/Ga were synthesized by dissolving appropriate amounts of corresponding metal nitrate hydrates in glycerine, followed by gelation, calcination and final heating at 800 °C for 24 h. The new compositions with M′/M=Ga/Al form solid-solution series, which are isotypes to the two other series M′/M=Fe/Al and Fe/Ga. The XRD data analysis yielded in all cases a linear dependence of the lattice parameters related on x. Rietveld structure refinements of the XRD patterns of the new compounds, Bi₂(Ga_xAl_1−x)₄O₉ reveal a preferential occupation of Ga in tetrahedral site (4 h). The IR absorption spectra measured between 50 and 4000 cm⁻¹ of all systems show systematic shifts in peak positions related to the degree of substitution. Samples treated in ¹⁸O₂ atmosphere (16 h at 800 °C, 200 mbar, 95% ¹⁸O₂) for ¹⁸O/¹⁶O isotope exchange experiments show a well-separated IR absorption peak related to the M-¹⁸O_c-M vibration, where O_c denotes the common oxygen of two tetrahedral type MO₄ units. The intensity ratio of M-¹⁸O_c/M-¹⁶O_c IR absorption peaks and the average crystal sizes were used to estimate the tracer diffusion coefficients of polycrystalline Bi₂Al₄O₉ (D=2×10⁻²² m²s⁻¹), Bi₂Fe₄O₉ (D=5×10⁻²¹ m²s⁻¹), Bi₂(Ga/Al)₄O₉ (D=2×10⁻²¹ m²s⁻¹) and Bi₂Ga₄O₉ (D=2×10⁻²⁰ m²s⁻¹).     

Thermoelectric properties of Ag-doped n-type (Bi2Te3)0.9-(Bi2−xAgxSe3)0.1 (x=0-0.4) alloys prepared by spark plasma sintering

Ag-doped n-type (Bi₂Te₃)_0.9-(Bi_2−xAg_xSe₃)_0.1 (x=0-0.4) alloys were prepared by spark plasma sintering and their physical properties evaluated. When at low Ag content (x=0.05), the temperature dependence of the lattice thermal conductivity follows the trend of (Bi₂Te₃)_0.9-(Bi₂Se₃)_0.1; while at higher Ag content, a relatively rapid reduction above 400 K can be observed due possibly to the enhancement of scattering of phonons by the increased defects. The Seebeck coefficient increases with Ag content, with some loss of electrical conductivity, but the maximum dimensionless figure of merit ZT can be obtained to be 0.86 for the alloy with x=0.4 at 505 K, about 0.2 higher than that of the alloy (Bi₂Te₃)_0.9-(Bi₂Se₃)_0.1 without Ag-doping.     

Free Current Carrier Concentration and Point Defects in Bi2−xSbxSe3 Crystals

From IR reflectivity spectra measurement on natural (0001) cleavage planes of Bi_2−xSb_xSe₃ single crystals (space group D⁵_3d-R3m), values of plasma resonance frequency ω_p were determined. Using the model respecting the existence of light and heavy electrons the dependence of free current carriers concentration on Sb-atom content in Bi_2−xSb_xSe₃ single crystals (for x=0.0 - 0.4) was obtained. There is a maximum in this dependence at lower Sb concentration (x ≅ 0.024). This effect is explained by a model of point defects, where both the concentration of negatively charged native defects in a Bi₂Se₃ lattice (anti-site defect Bi′_Se, “seven-layer lamellae” Bi₃Se⁻₄) and the concentration of vacancies in a selenium sublattice (V^••_Se) decreases with Sb content. On this basis the observed rise of the Hall mobility R_Hσ in the range from 500 to 1200 cm²/Vs is explained.     

Thermoelectric and microstructural properties of Pb0.9−xSn0.1GexTe compounds prepared by spinodal decomposition

Three samples of Pb_0.9−xSn_0.1Ge_xTe with x=0.25, 0.35, 0.6 were prepared by heating the mixtures above the melting point of the constituent elements followed by quenching in water. The x=0.6 sample is close to the center of the immiscibility region, while the x=0.25 and 0.35 samples are in the Pb rich region inside the spinodal miscibility gap. Microstructural investigations using Powder X-ray Diffraction, Scanning Electron Microscopy and Energy Dispersive X-ray Spectroscopy revealed both GeTe-rich and PbTe-rich phases. The samples were uniaxially hot pressed and the thermoelectric properties were characterized in the temperature range 2-400 K using a commercial apparatus and from 300 to 650 K with a custom designed setup. The best sample (x=0.6) reached zT≈0.6 at 650 K, while the x=0.25 and 0.35 samples showed thermal instability at elevated temperatures.     

Synthesis and characterization of quaternary selenides Sn2Pb5Bi4Se13 and Sn8.65Pb0.35Bi4Se15

Quaternary selenides Sn₂Pb₅Bi₄Se₁₃ and Sn_8.65Pb_0.35Bi₄Se₁₅ were synthesized from the elements in sealed silica tubes; their crystal structures were determined by single-crystal and powder X-ray diffraction. Both compounds crystallize in monoclinic space group C2/m (No.12), with lattice parameters of Sn₂Pb₅Bi₄Se₁₃: a = 14.001(6) Å, b = 4.234(2) Å, c = 23.471(8) Å, V = 1376.2(1) Å³, R₁/wR₂ = 0.0584/0.1477, and GOF = 1.023; Sn_8.65Pb_0.35Bi₄Se₁₅: a = 13.872(3) Å, b = 4.2021(8) (4) Å, c = 26.855(5) Å, V = 1557.1(5) Å³, R₁/wR₂ = 0.0506/0.1227, and GOF = 1.425. These compounds exhibit tropochemical cell-twinning of NaCl-type structures with lillianite homologous series L(4, 5) and L(4, 7) for Sn₂Pb₅Bi₄Se₁₃ and Sn_8.65Pb_0.35Bi₄Se₁₅, respectively. Measurements of electrical conductivity indicate that these materials are semiconductors with narrow band gaps; Sn₂Pb₅Bi₄Se₁₃ is n-type, whereas Sn_8.65Pb_0.35Bi₄Se₁₅ is a p-type semiconductor with Seebeck coefficients −80(5) and 178(7) μV/K at 300 K, respectively.     

Luminescent and structural properties of the series Ba6−xEuxTi2+xTa8−xO30 and Ba4−yKyEu2Ti4−yTa6+yO30

The series Ba_6−xEu_xTi_2+xTa_8−xO₃₀ and Ba_4−yK_yEu₂Ti_4−yTa_6+yO₃₀ have been synthesized at 1400°C in air. They exhibit efficient excitation at about 400 nm and typical emission of Eu³⁺ at about 580-620 nm, form solid solutions within 0.0?x?2.0 and 0?y?4 respectively, and crystallized in P4/mbm at room temperature with Eu atoms occupied at centrosymmetric site (0, 0, 0). Their conductivity is very low (2.8×10⁻⁶ Ω⁻¹ cm⁻¹ at 740°C for Ba₆Ti₂Ta₈O₃₀).     

Temperature and composition dependent structural investigation of the defect perovskite series Sr1−xTi1−2xNb2xO3, 0≤x≤0.2

The crystal structure of the defect perovskite series Sr_1−xTi_1−2xNb_2xO₃ has been investigated over a range of temperatures using high-resolution synchrotron X-ray diffraction, neutron diffraction and electron diffraction. Three distinct regions were observed: 0<x≤0.125 was a solid solution of Sr_1−xTi_1−2xNb_2xO₃ with minor SrTiO₃ intergrowth, 0.125<x≤0.2 was a pure Sr_1−xTi_1−2xNb_2xO₃ solid solution adopting the cubic perovskite type structure (Pm3¯m) and for x>0.2 Sr_0.8Ti_0.6Nb_0.4O₃ and Sr₃TiNb₄O₁₅ formed a two phase region. The cubic structure for Sr_0.8Ti_0.6Nb_0.4O₃ was stable over the temperature range 90-1248 K and the thermal expansion co-efficient was determined to be 8.72(9)×10⁻⁶ K⁻¹. Electron diffraction studies revealed diffuse scattering due to local scale Ti/Nb displacements and slightly enhanced octahedral rotations that did not lead to long range order. The octahedral rotations were observed to ‘lock-in’ at temperatures below ∼75 K resulting in a tetragonal structure (I4/mcm) with anti-phase octahedral tilting about the c-axis.     

Mechanochemical-thermal preparation and structural studies of mullite-type Bi2(GaxAl1−x)4O9 solid solutions

A series of Bi₂(Ga_xAl_1−x)₄O₉ solid solutions (0≤x≤1), prepared by mechanochemical processing of Bi₂O₃/Ga₂O₃/Al₂O₃ mixtures and subsequent annealing, was investigated by XRD, EDX, and ²⁷Al MAS NMR. The structure of the Bi₂(Ga_xAl_1−x)₄O₉ solid solutions is found to be orthorhombic, space group Pbam (No. 55). The lattice parameters of the Bi₂(Ga_xAl_1−x)₄O₉ series increase linearly with increasing gallium content. Rietveld refinement of the XRD data as well as the analysis of the ²⁷Al MAS NMR spectra show a preference of gallium cations for the tetrahedral sites in Bi₂(Ga_xAl_1−x)₄O₉. As a consequence, this leads to a far from random distribution of Al and Ga cations across the whole series of solid solutions.     

Synthesis, Electrical Properties, and Powder Neutron Crystal Structure Refinement of Pb1−xBixPt2O4 Compounds (0≤x≤0.3)

Substitution of Pb for Bi in the recently characterized mixed-valence lead-platinum oxide PbPt₂O₄ was attempted and a Pb_1−xBi_xPt₂O₄ solid solution was obtained for 0≤x≤0.3. Powder X-ray diffraction study showed that all substituted compounds crystallize with similar triclinic unit cell and PbPt₂O₄ lattice parameters. The structural model of Pb_0.7Bi_0.3Pt₂O₄ was refined from powder X-ray diffraction data using the Rietveld method and the results indicate the same crystal structure than PbPt₂O₄ with one mixed Pb/Bi atomic site. Neutron diffraction realized on the two limit compositions of the solid solution (x=0 and 0.3) allowed to confirm the PbPt₂O₄ and Pb_0.7Bi_0.3Pt₂O₄ stoichiometries. Mean oxidation degree of Pt atoms in the [PtO₄] infinite chains decreases from +3 for PbPt₂O₄ to +2.7 for Pb_0.7Bi_0.3Pt₂O₄. Conductivity measurements show a metallic behavior for all the compositions except the limit composition x=0.3 for which a semiconducting behavior appears.     

Flux growth of a new cobalt-zinc-tin ternary phase Co7+xZn3−xSn8 and its relationship to CoSn

The intermetallic compound Co_7+xZn_3−xSn₈ (−0.2<x<0.2) forms from the reaction of cobalt in zinc/tin eutectic flux. This phase has a new structure type in orthorhombic space group Cmcm, with unit cell parameters a=4.138(1) Å, b=12.593(4) Å, and c=11.639(4) Å (Z=2; R₁=0.0301). Varying the amount of cobalt in the synthesis leads to formation of a superstructure in space group Pnma, with lattice parameters a=12.5908(2) Å, b=11.6298(3) Å, and c=8.2704(2) Å (Z=4; R₁=0.0347). A Co/Zn mixed site and a partially occupied Co site in the Cmcm structure order to form the Pnma supercell. TGA/DSC studies indicate that the binary phase CoSn initially forms in the flux at 1173 K, and then reacts with the zinc in the cooling solution to form the ternary structure at 823 K. This phase exhibits Pauli paramagnetic behavior.     

Crystal structure and physical properties of the novel ternary intermetallics URuSi3−x and U3Ru2Si7

Two novel ternary intermediate phases, namely URuSi_3−x (x=0.11) and U₃Ru₂Si₇ were found in the Si-rich part of the U-Ru-Si phase diagram. Single crystal X-ray diffraction measurements, carried out at room temperature, indicated that URuSi_3−x crystallizes in its own tetragonal type structure (space group P4/nmm, no. 129; unit cell parameters: a=12.108(1) Å and c=9.810(1) Å), being a derivative of the BaNiSn₃-type structure. U₃Ru₂Si₇ adopts in turn a disordered orthorhombic La₃Co₂Sn₇-type structure (space group Cmmm, no. 65; unit cell parameters: a=4.063(1) Å, b=24.972(2) Å and c=4.072(1) Å). As revealed by magnetization, electrical resistivity and specific heat measurements, both compounds order magnetically at low temperatures. Namely URuSi_3−x is a ferromagnet with T_C=45 K, and U₃Ru₂Si₇ shows ferrimagnetic behavior below T_C=29 K.     

Crystal structure of Bi1−xTbxFeO3 from high-resolution neutron diffraction

Samples of Bi_1−xTb_xFeO₃, with x=0.05, 0.10, 0.15, 0.20 and 0.25, have been synthesised by solid state reaction. The crystal structures of the perovskite phases, characterised via Rietveld analysis of high resolution powder neutron diffraction data, reveal a structural transition from the R3c symmetry of the parent phase BiFeO₃ to orthorhombic Pnma symmetry, which is complete for x=0.20. The x=0.10 and 0.15 samples are bi-phasic. The transition from a rhombohedral to orthorhombic unit cell is suggested to be driven by the dilution of the stereochemistry of the Bi³⁺ lone pair at the A-site. The G-type antiferromagnetic spin structure, the size of the ordered magnetic moment (∼3.8 μ_B) and the T_N (∼375 °C) are relatively insensitive to increasing Tb concentrations at the A-site.     

Neutron diffraction studies of RSn1+xGe1−x (R=Tb-Er) compounds

The magnetic structures of RSn_1+xGe_1−x (R=Tb, Dy, Ho and Er, x≈0.1) compounds have been determined by neutron diffraction studies on polycrystalline samples. The data recorded in a paramagnetic state confirmed the orthorhombic crystal structure described by the space group Cmcm. These compounds are antiferromagnets at low temperatures. The magnetic ordering in TbSn_1.12Ge_0.88 is sine-modulated described by the propagation vector k=(0.4257(2), 0, 0.5880(3)). Tb magnetic moment equals 9.0(1) μ_B at 1.62 K. It lies in the b-c plane and form an angle θ=17.4(2)° with the c-axis. This structure is stable up to the Nèel temperature equal to 31 K. The magnetic structures of RSn_1+xGe_1−x, where R are Dy, Ho and Er at low temperatures are described by the propagation vector k=(1/2, 1/2, 0) with the sequence (++−+) of magnetic moments in the crystal unit cell. In DySn_1.09Ge_0.91 and HoSn_1.1Ge_0.9 magnetic moments equal 7.25(15) and 8.60(6) μ_B at 1.55 K, respectively. The moments are parallel to the c-axis. For Ho-compound this ordering is stable up to T_N=10.7 K. For ErSn_1.08Ge_0.92, the Er magnetic moment equals 7.76(7) μ_B at T=1.5 K and it is parallel to the b-axis. At T_t=3.5 K it tunes into the modulated structure described by the k=(0.496(1), 0.446(4), 0). With the increase of temperature there is a slow decrease of k_x component and a quick decrease of k_y component. The Er magnetic moment is parallel to the b-axis up to 3.9 K while at 4 K and above it lies in the b-c plane and form an angle 48(3)° with the c-axis. In compounds with R=Tb, Ho and Er the magnetostriction effect at the Nèel temperature is observed.     

Different [Bi12O14]n Columnar Structural Types in the Bi-Mo-Cr-O System: Synthesis, Structure, and Electrical Properties of the Solid Solution Bi26Mo10−xCrxO69

In order to search for new ionic conductor materials exhibiting a columnar [Bi₁₂O₁₄] structural type, the syntheses of the solid solutions Bi₂Mo_1−xCr_xO₆ and Bi₂₆Mo_10−xCr_xO₆₉ have been undertaken. Single phases were obtained for the last composition with 0≤x≤5 homogeneity range. Moreover, a new oxide with Bi₆Cr₂O₁₅ composition has been obtained from the limit nominal stoichiometries Bi₆CrO₆ and Bi₂₆Cr₁₀O₆₉. X-ray powder diffraction studies have shown that this oxide crystallizes in the orthorhombic system, space group Ccc2 or Cccm, with unit-cell parameters a=19.8986(9) Å, b=12.2756(6) Å, c=5.8868(3) Å, and V=1437.96 ų. Impedance spectroscopy measurements carried out on the representative Bi₂₆Mo₈Cr₂O₆₉ phase, showed that this material is a good oxygen ion conductor, in fact the best one belongs to the columnar structural type, with a conductivity as high as 1.7×10⁻³Scm⁻¹ at 425°C.     

Electron-poor SrAuxIn4−x (0.5?x?1.2) and SrAuxSn4−x (1.3?x?2.2) phases with the BaAl4-type structure

Solid solutions SrAu_xIn_4−x (0.5?x?1.2) and SrAu_xSn_4−x (1.3?x?2.2) have been prepared at 700 °C and their structures characterized by powder and single-crystal X-ray diffraction. They adopt the tetragonal BaAl₄-type structure (space group I4/mmm, Z=2; SrAu_1.1(1)In_2.9(1), a=4.5841(2) Å, c=12.3725(5) Å; SrAu_1.4(1)Sn_2.6(1), a=4.6447(7) Å, c=11.403(2) Å), with Au atoms preferentially substituting into the apical over basal sites within the anionic network. The phase width inherent in these solid solutions implies that the BaAl₄-type structure can be stabilized over a range of valence electron counts (vec), 13.0-11.6 for SrAu_xIn_4−x and 14.1-11.4 for SrAu_xSn_4−x. They represent new examples of electron-poor BaAl₄-type compounds, which generally have a vec of 14. Band structure calculations confirm that substitution of Au, with its smaller size and fewer number of valence electrons, for In or Sn atoms enables the BaAl₄-type structure to be stabilized in the parent binaries SrIn₄ and SrSn₄, which adopt different structure types.