An experimental investigation on pool boiling heat transfer enhancement using Cu-Al2O3 nano-composite coating

Pool boiling heat transfer performances of Cu-Al₂O₃-coated copper surfaces have been studied experimentally for its potential use in heat transfer applications. In the present study, a two-step electrochemical deposition method is examined. This method provides an easy control on surface properties such as porosity and coating thickness. The deposition method is studied carefully and responsible surface morphology parameters are reported. After performing the pool boiling experiments on coated surfaces with DI water, the maximum critical heat flux of 1800 kW/m² and heat transfer coefficient of 193 kW/m² K, which are 68% and 260% higher than that of bare surface, respectively.     

Investigation of 4H—SiC metal—insulation—semiconductor structure with Al2O3/SiO2 stacked dielectric

Atomic layer deposited (ALD) Al₂O₃/dry-oxidized ultrathin SiO₂ films as high-k gate dielectric grown on the 8° off-axis 4H-SiC (0001) epitaxial wafers are investigated in this paper. The metal-insulation-semiconductor (MIS) capacitors, respectively with different gate dielectric stacks (Al₂O₃/SiO₂, Al₂O₃, and SiO₂) are fabricated and compared with each other. The I-V measurements show that the Al₂O₃/SiO₂ stack has a high breakdown field ( ≥ 12 MV/cm) comparable to SiO₂, and a relatively low gate leakage current of 1× 10^-7 A/cm² at electric field of 4 MV/cm comparable to Al₂O₃. The 1-MHz high frequency C-V measurements exhibit that the Al₂O₃/SiO₂ stack has a smaller positive flat-band voltage shift and hysteresis voltage, indicating less effective charge and slow-trap density near the interface.     

Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS–HEMT

We present an AlInN/AlN/GaN MOS–HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al₂O₃ dielectric layer and a 0.3 μm field-plate (FP)-MOS--HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS--HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS--HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance--voltage (C--V) curve of the FP-MOS--HEMT demonstrates a high-quality interface of Al₂O₃/AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μ m and a negligible double-pulse current collapse is achieved in the FP-MOS--HEMT. This is attributed to the adoption of an ultra-thin Al₂O₃ gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al₂O₃ FP-MOS--HEMT to deliver high currents and power densities in high power microwave technologies.     

Rotational dependences of line half-widths for CO and CO2 confined in SiO2/Al2O3 xerogel

The absorption spectra of CO and CO₂ confined in nanopores of SiO₂/Al₂O₃ xerogel have been measured using a Bruker IFS-125 HR Fourier spectrometer. Dependences of the half-width values on rotational quantum numbers and the line shift mean values are studied and compared with the data available in literature. Possible causes which can affect the rotational dependences are discussed.     

Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices

This paper describes the heavy ion-induced effects on the electrical characteristics of reactively sputtered ZrO₂ and Al₂O₃ high-k gate oxides deposited in argon plus nitrogen containing plasma. Radiation-induced degradation of sputtered high-k dielectric ZrO₂/Si and Al₂O₃/Si interface was studied using 45?MeV Li³⁺ ions. The devices were irradiated with Li³⁺ ions at various fluences ranging from 5?×?10⁹ to 5?×?10¹²?ions/cm². Capacitance–voltage and current–voltage characteristics were used for electrical characterization. Shift in flat band voltage towards negative value was observed in devices after exposure to ion radiation. Post-deposition annealing effect on the electrical behavior of high-k/Si interface was also investigated. The annealed devices showed better electrical and reliability characteristics. Different device parameters such as flat band voltage, leakage current, interface defect density and oxide-trapped charge have been extracted.The surface morphology and roughness values for films deposited in nitrogen containing plasma before and after ion radiation are extracted from Atomic Force Microscopy.     

Application of TiO2 nanofluid-based coolant for jet impingement quenching of a hot steel plate

Cooling rate in Run Out Table (ROT) in steel industries tailors microstructure which lead to improved mechanical properties. The current work aims to increase cooling performance of steel using TiO₂ nanofluid as coolant in jet impingement. Different concentrations of TiO₂ nanofluid have been used to study effect on jet cooling of a steel plate from 900°C. Thermal conductivity of nanofluid is found to significantly enhance at optimum concentration and this plays major role in increasing cooling rate of the steel plate. 19% enhancement in cooling rate is observed by using 40 ppm of TiO₂ nanofluid compared to water.     

Electrical conductivity in magnesium-doped Al2O3 crystals at moderate temperatures

Abstract

AC and DC electrical measurements between 273 and 800 K were used to characterize the electrical conductivity of Al₂O₃: Mg single crystals containing [Mg]⁰ centers. At low fields contacts are blocking. At high fields, electrical current flows steadily through the sample and the I–V characteristic corresponds to a directly biased barrier with a series resistance (bulk resistance). AC measurements yield values for the junction capacitance as well as for the sample resistance, and provide reproducible conductivity values. The conductivity varies linearly with the [Mg]⁰ concentration and a thermal activation energy of 0.67 eV was obtained, which agrees very well with the activation energy previously reported for the motion of free holes.     

Surface Modification of Al2O3 Fiber with Binary Nanoparticles using a Dry-Mechanical Coating Technique

Integrating materials with different functionalities into a composite material to obtain synergetic properties has generated considerable interest in various scientific and technical fields. In this study, a dry-mechanical coating process was used to fix nanosized Al₂O₃ and CuO particles directly onto the surface of Al₂O₃ fiber substrates by employing high shear and compression forces. The resulting composite materials showed good dispersion and homogeneous distribution of Al₂O₃ and CuO nanoparticles. Important coating parameters, including initial particle loadings and processing times were investigated for their effects on coating characteristics and product properties. The experimental results showed that the product surface area increased with higher nanoparticle loadings. The degree of dispersion and homogenous distribution of Al₂O₃ nanoparticles with CuO nanoparticles increased with the processing time. Additionally, the crystalline phase of raw materials was preserved during the coating process under the conditions studied in this work.     

微弧等离子喷涂碳纳米管/纳米Al2O3-TiO2复合涂层的吸波性能研究

将碳纳米管与纳米Al₂O₃-TiO₂陶瓷粉末超声共混制备了碳纳米管/纳米Al₂O₃-TiO₂复合粉末,测试了复合粉末在2—18GHz波段的电磁参数.研究表明：随着碳纳米管质量分数的增加,碳纳米管/纳米Al₂O₃-TiO₂复合粉末的复介电常数和损耗角不断增大.当碳纳米管质量分数和厚度增加时,复合粉末对电磁波的反射率峰值先增加后减小,而谐振频率不断向低频移动.采用微弧等离子喷涂制备了7wt%碳纳米管/纳米Al₂O₃-TiO₂复合吸波涂层,当厚度为1.5mm时,涂层最小反射率为-24.0dB,当厚度为2.0mm时,涂层小于-10dB的频带宽为3.60GHz,当温度为500℃高温时,1.0mm厚的涂层最小高温反射率为-12.2dB,小于-10dB频带宽为2.0GHz.复合涂层的实际厚度D与理论厚度d呈线关系：d=0.898D+0.515. 关键词： 等离子喷涂 碳纳米管 2O₃-TiO₂')" href="#">纳米Al₂O₃-TiO₂ 吸波性能     

The enhancement of luminescence in Co-doped cubic Eu2O3 using Li and Al ions

The co-doping of Li⁺ and Al³⁺ ions drastically enhances the luminescence of cubic Eu₂O₃. The integrated emission intensity of ⁵D₀→⁷F_J bands (J=1-4) at 580-710 nm increases by a factor of about 6.7 in the co-doped Eu₂O₃ compared to the un-doped Eu₂O₃. In order to confirm that the co-doped ions were actually incorporated into the host lattice, the structural characteristics were studied using Raman spectroscopy, XPS, XRD, photoluminescence lifetime, and an SEM. These analyses consistently indicate a certain structural evolution in their results with an increase in the co-doping concentration. Variations in the crystal structure, the crystal morphology, and the intensity variation of the Raman modes at 465 and 483 cm⁻¹ are presented as the evidences showing the incorporation of the co-doped ions into the host. The luminescence enhancement is discussed in terms of concentration quenching, reduction of defect sites, and the modification of the local symmetry of the Eu³⁺ ions, especially in the inversion symmetry sites.     

High-pressure optical studies on R-line fluorescence lifetime in Al2O3:V2+

The effect of high hydrostatic pressure (up to 10.3?GPa) at room temperature on fluorescence lifetime τ for R line (²E→⁴A₂ transition) in ruby Al₂O₃:V²⁺ was studied. The performed studies show the linear increase of τ with increasing pressure. At 10.3?GPa, τ is about 1.36 times higher than at ambient pressure. The obtained trend was explained by a model which considered the effect of pressure on τ through an induced change of line position, inter-ionic distance, compressibility, and molecular polarizability. A good agreement between the calculated and experimental values for τ was obtained.     

Interfacial reactions and oxidation behavior of Al2O3 and Al2O3/Al coatings on an orthorhombic Ti2AlNb alloy

The uniform and dense Al₂O₃ and Al₂O₃/Al coatings were deposited on an orthorhombic Ti₂AlNb alloy by filtered arc ion plating. The interfacial reactions of the Al₂O₃/Ti₂AlNb and Al₂O₃/Al/Ti₂AlNb specimens after vacuum annealing at 750 °C were studied. In the Al₂O₃/Ti₂AlNb specimens, the Al₂O₃ coating decomposed significantly due to reaction between the Al₂O₃ coating and the O-Ti₂AlNb substrate. In the Al₂O₃/Al/Ti₂AlNb specimens, a γ-TiAl layer and an Nb-rich zone came into being by interdiffusion between the Al layer and the O-Ti₂AlNb substrate. The γ-TiAl layer is chemically compatible with Al₂O₃, with no decomposition of Al₂O₃ being detected. No internal oxidation or oxygen and nitrogen dissolution zone was observed in the O-Ti₂AlNb alloy. The Al₂O₃/Al/Ti₂AlNb specimens exhibited excellent oxidation resistance at 750 °C.     

Manipulating Bonding at a Cu/(0001)Al2O3 Interface by Different Substrate Cleaning Processes

Growth of Cu films on (0001)Al₂O₃ substrates can result in metallic Cu—Al or ionic-covalent Cu—O bonds at atomically abrupt interfaces. The type of bonding depends on the substrate cleaning procedure prior to film growth. Cu films deposited on Ar⁺-ion sputter-cleaned substrates exhibit interfacial Cu-L_2,3, Al-L_2,3 and O-K energy-loss near-edge structures that indicate the formation of metallic Cu—Al bonds at the Cu/Al₂O₃ interface. In contrast, growth on chemically cleaned -Al₂O₃ substrates results in interfacial energy-loss near-edge structures that suggest Cu—O bonding at the interface. The experimental electron energy-loss spectroscopic results are compared to calculated spectra, and the mechanisms causing the changes in the atomic and electronic structure are addressed.     

Effect of chloride doping concentration on enhancement of protonic conductivity of mesoporous Al2O3

Mesoporous Al₂O₃ was prepared by a sol-gel method with doping different amount of LaCl₃. The proton conductivity of mesoporous Al₂O₃ increased with increasing the doping concentration up to the optimum doping, 0.1 Cl/Al mole ratio. The surface acidities of different samples were investigated by NH₃-TPD method. The change trends of surface acidity are consistent with that of proton conductivity. It indicates that the proton conductivity of mesoporous Al₂O₃ can be increased by enhancing its surface acidity via the chloride doping.     

Effects of strontium on the characteristics of Pb(Zr1/2Ti1/2)O3--Pb(Zn1/3Nb2/3)O3 ceramics

The dielectric and piezoelectric properties of pyrochlore-free lead zirconate titanate-lead zinc niobate ceramics were investigated systematically as a function of Sr doping. The powders of Pb_{(1? x )}Sr _x [0.7(Zr_{1 / 2}Ti_{1 / 2})–0.3(Zn_{1 / 3}Nb_{2 / 3})]O₃, where x?=?0–0.06 were prepared using the columbite-(wolframite) precursor method. The ceramic materials were characterized using X-ray diffraction, dielectric spectra, hysteresis and electromechanical measurements. The phase-pure perovskite phase of Sr-doped PZN--PZT ceramics was obtained over a wide compositional range. The results showed that the optimized electrical properties were also achieved at composition x?=?0.0, which were K _P?=?0.69, d ₃₃?=?670?pC?N^?1, P _r?=?31.9?µC?cm^?2 and ε_rmax?=?18600. Maximum dielectric constant values of the systems decreased rapidly with increasing Sr concentration. Moreover, with increasing Sr concentration dielectric constant versus temperature curves become gradually broader. The diffuseness parameter increased significantly with Sr doping. Furthermore, Sr doping has been shown to produce a linear reduction in the transition temperature (T _m)?=?294.1–12.7x°C with concentration (x). Sr shifts the transition temperature of this system at a rate of 12.7°C?mol^?1%.     

Tb3Sc2Al3O12-TbScO3 eutectic self-organized microstructure for metamaterials and photonic crystals application

Eutectics are the materials with foreseen application in the field of photonic crystals and metamaterials. In this paper, the dependence on chemical composition of the microstructures of terbium-scandium-aluminium gamet and terbium-scandium perovskite (Tb₃Sc₂Al₃O₁₂-TbScO₃) eutectics has been studied. The growth of the eutectic rods by the micro-pulling down method is presented, using compositions with several different volume fractions of the garnet and the perovskite phases, V_TSAG:V_TSP = 4, 3, 2, 1, 1/2. The phases have been characterized by powder X-ray diffraction and energy dispersive spectrometry. The relationship between the lattice constant of individual phases and the chemical composition is presented. The unidirectional growth of microrods has been also investigated by electron backscattering diffraction.     

Al2O3-Y2O3-ZrO2三相复合陶瓷的介电谱研究

采用传统的固相反应法,在1400–1500 ℃下烧结,制备得到Al₂O₃-Y₂O₃-ZrO₂三相复合陶瓷.样品的结构、形貌和电性能分别用X射线衍射(XRD)、扫描电子显微镜(SEM)及介电谱表征.XRD表明此三相复合体系无其他杂相,加入Y₂O₃及ZrO₂后使得Al₂O₃成瓷温度降低;SEM表明此体系晶粒直径为200–500 nm,并且样品随烧结温度的升高而变得更加致密,晶界更加清晰;介电损耗谱中出现峰值弛豫现象,根据Cole-Cole复阻抗谱得出其为非德拜弛豫. 关键词： 2O₃-Y₂O₃-ZrO₂三相陶瓷')" href="#">Al₂O₃-Y₂O₃-ZrO₂三相陶瓷 介电弛豫 阻抗谱 热导率     

Substrate effects on V2O3 thin films

We apply density functional theory and the augmented spherical wave method to analyze the electronic structure of V₂O₃ in the vicinity of an interface to Al₂O₃. The interface is modeled by a heterostructure setup of alternating vanadate and aluminate slabs. We focus on the possible modifications of the V₂O₃ electronic states in this geometry, induced by the presence of the aluminate layers. In particular, we find that the tendency of the V 3d states to localize is enhanced and may even cause a metal-insulator transition.     

Nanoscale Analysis of Multilayer Interfaces of W/Al2O3/Ti/Cu

W, Al₂O₃ and Ti films were deposited onto a Cu substrate by means of the rf magnetron sputtering method. After deposition, the foils were annealed at various temperatures in vacuum and the interfaces of the films were observed by a field-emission transmission electron microscopy (FE-TEM), after preparing a cross-sectional thin foil using a focused ion beam (FIB) machine. After annealing the foil at 473 and 623 K, no reaction phases were identified at each interface of W/Al₂O₃, Al₂O₃/Ti and Ti/Cu-substrate. However, from the results of compositional analysis at the interface of Al₂O₃/Ti bilayer, after heat-treatment at 623 K, the formation of an oxide layer was suggested even though it was not clearly observed. On the other hand, after heat-treatment at 823 K, the formation of CuTi₂, Cu₃Ti₂ and Cu₄Ti phases were identified at the interface of Ti/Cu bilayers from the compositional analysis of reaction layers after heat-treatment at different temperatures, and the diffusion coefficients and activation energies in the phases were evaluated. In this paper, the influence of heat-treatment on the interfacial behavior of multilayer are discussed on the basis of nanoscale analysis by EDS and HRTEM images.     

Deposition and characterization of binary Al2O3/SiO2 coating layers on the surfaces of rutile TiO2 and the pigmentary properties

Binary Al₂O₃/SiO₂-coated rutile TiO₂ composites were prepared by a liquid-phase deposition method starting from Na₂SiO₃·9H₂O and NaAlO₂. The chemical structure and morphology of binary Al₂O₃/SiO₂ coating layers were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, TG-DSC, Zeta potential, powder X-ray diffraction, and transmission electron microscopy techniques. Binary Al₂O₃/SiO₂ coating layers both in amorphous phase were formed at TiO₂ surfaces. The silica coating layers were anchored at TiO₂ surfaces via Si-O-Ti bonds and the alumina coating layers were probably anchored at the SiO₂-coated TiO₂ surfaces via Al-O-Si bonds. The formation of continuous and dense binary Al₂O₃/SiO₂ coating layers depended on the pH value of reaction solution and the alumina loading. The binary Al₂O₃/SiO₂-coated TiO₂ composites had a high dispersibility in water. The whiteness and brightness of the binary Al₂O₃/SiO₂-coated TiO₂ composites were higher than those of the naked rutile TiO₂ and the SiO₂-coated TiO₂ samples. The relative light scattering index was found to depend on the composition of coating layers.