ZnS:Cu单晶中交流电致发光线的导电性和成分的研究

本文用电解法证明了,在ZnS:Cu单晶中电致发光线是导电的。晶体中除了有发光的导电线外,还有不发光的导电线。化学分析表明,这些导电线是富铜的。ZnS:Cu单晶交流电致发光的显微观察已表明[1],在晶体中,发光是不均匀的。发光体是分布在晶体内部的一些线,即所谓的发光彗星。关于这种发光线,前人提出了多种模型[2-5]。在这些模型中,一致假设发光线是导电的;而对发光线与Cu的关系则说法不一。但迄今都没有直接用实验加以证明。本工作是用电解法直接证明了交流电致发光线是导电的。化学分析表明,这些导电线是富Cu的。     

ZnS:Cu单晶交流电致发光线的新现象

在Zns:Cu单晶中,交流电致发光线是主要发光区。其次还有点状和带状发光区,而带状发光区多数发蓝色光。     

交流电致发光线的分层发光现象

显微观察证明,在ZnS:Cu单晶中,蓝色的交流电致发光线不只是发射蓝色光,它同时还发射绿色光。蓝色光只发射于发光线的外层区域,而其内层区域是绿色光的发射区。因此,在显微镜下就显示出了分层发光现象。     

生长速率对低压MOCVD外延生长GaAs/Ge异质结的影响

采用自制的液相金属氧化物化学汽相沉积(LP-MOCVD)设备,在Ge(100)向(110)面偏9°外延生长出GaAs单晶外延层,对电池材料进行了X射线衍射测试分析,半峰宽为52″.讨论了外延生长参量对GaAs/Ge的影响,表明抑制反向畴不仅与过渡层有关,而且与GaAs单晶外延生长参量有关.适当的生长速率可有效地抑制反向畴的生长.     

单晶Cu(001)薄膜塑性变形的分子动力学模拟

使用分子动力学方法,模拟研究了单晶Cu(001)薄膜在双向等轴拉伸应变下的塑性变形行为.当应变超过一定值时,样品通过产生位错、层错及孪晶而发生塑性变形.当应变相对较低时,不全位错首先在薄膜表面形核并在密排面上滑移,留下堆积层错;当应变增加时,位错在表面与内部同时成核生长,层错数量也随之增加.分析了相邻滑移面上的位错之间相互作用形成孪晶的微观过程.材料内部形成大量堆积层错及孪晶后,较大孪晶的密排面上的原子也会发生滑移,形成孪晶内部的层错结构以释放残余应力.     

C60单晶的汽相生长

报道使用Ｃ＿６０粉末，利用双炉装置，通过闭管汽相法生长Ｃ＿６０单晶的实验及结果。Ｃ＿６０单晶的质量很好，较大单晶的尺寸为０．５ｍｍ×０．６１ｍｍ×１．０ｍｍ。Ｘ射线衍射和电子衍射图的分析得到室温下Ｃ＿６０单晶为ｆ＿ｃｃ结构，确定了晶格常数，还进行了Ｒａｍａｎ光谱实验，实验结果表明，热、冷区温度及两者的温度差是影响大尺寸Ｃ＿６０单晶汽相生长的主要因素，对此进行了详细的讨论。     

化学溶液法生长单晶薄膜

化学溶液法生长单晶薄膜据报道ＳａｎｔａＢａｒｂａｒａ加州大学材料系Ｆ．Ｆ．Ｌａｎｇｅ介绍了一种新颖的、经济的（不需要大型汽相沉积设备）生长无机单晶膜的方法．制备成的单晶膜有蓝宝石Ａｌ２Ｏ２（０００１）单晶上的ＬｉＮｂＯ３；中间有Ｆｅ２Ｏ３缓冲层的Ｌｉ...     

磷化镓单晶外延工艺及其自支撑薄膜的制作

采用Ga—PCI_3—H_2系统开管式汽相外延的方法,在GaAs衬底上生长掺Zn的GaP单晶。经化学腐蚀去掉GaAs衬底得到自支撑GaP单晶薄膜。 研究了在P型GaAs衬底上外延P—型GaP的生长条件,生长速度与温度的关系,生长速度与输运气体中的PCI_3浓度的关系,以及晶向偏差,清洁条件等对外延层质薄的(井彡)响。     

温度对镍基单晶高温合金γ/γ'相界面上错配位错运动影响的分子动力学研究

用分子动力学方法研究了温度对镍基单晶高温合金γ/γ'相界面上错配位错运动的影响.研究结果表明:无论是在低温还是在高温下,错配位错的运动都是通过扭折的形核及扭折沿位错线的迁移来实现;在低温时错配位错的相互作用有利于错配位错的运动;然而在高温时错配位错的相互作用可以阻碍错配位错的运动,从而阻碍γ和γ'相界面的相对滑动,有利于提高镍基单晶高温合金的高温力学性能. 关键词： 镍基单晶高温合金 相界面 错配位错 分子动力学模拟     

热处理引起3C-ZnS结构转变的X-射线衍射分析

为了论证层错是硫化锌晶体中交流电致发光的一个必要条件,我们把3C-ZnS单晶体在1100℃热处理后引入了层错.同时,我们对热处理前后的结构,用劳埃背反射法和文献[8、13]推导的公式进行了分析.结果表明,沿3C-结构<111>四个等价方向都可以产生无序、孪晶和2H-结构,而且当热处理时间足够长时,结构转变趋向于一个<111>方向.这些实验结果,在有关的文献中尚未见到.     

Mechanism of phase transformations in ZnS

X-ray diffraction of the 2H-3C transformation in ZnS crystals has been studied to determine the mechanism of the phase transformation. Single crystals of 2H ZnS were annealed in vacuum at different temperatures to induce the phase transformation and then quenched to arrest it at different intermediate stages. The transformation is found to occur by the non-random nucleation of stacking faults in the 2H structure which produce characteristic diffuse steaks along reciprocal lattice rows parallel toc* for whichH−K ≠ 0 (mod 3). All the crystals finally transform to a disordered twinned 3C structure. A study of the broadening of the x-ray diffraction maxima reveals that the stacking faults involved in the transformation are basal plane deformation faults. Initially these nucleate at random producing a random distribution of cubic nuclei within the 2H structure. As the transformation proceeds these 3C nuclei grow into thick 3C regions by a preferential nucleation of the faults at 2-layer separations. Since the 3C nuclei can have twin orientations the resulting 3C structure invariably contains a random distribution of twin faults. This is confirmed by comparing the experimentally observed intensity profile of the 10.L reflections as recorded on a single crystal diffractometer, with those calculated theoretically for a randomly twinned cubic structure.     

ZnS晶体3C⇔2H结构转变的LAUE衍射图中“奇异点”的标定

在ZnS晶体3C⇔2H结构转变的X—射线Laue衍射分析中,为了解释一维无序造成的异常衍射现象,本文推导了Laue衍射图曲线晶带的“奇异点”计算公式。并应用此公式,计算了ZnSLaue衍射照片上数条晶带上的“奇异点”,计算值与实验值完全吻合。另外,本文还对“奇异点”的形成、特点、标定的意义以及计算公式适用范围进行了讨论。     

Polarized emission of doped ZnS crystals

Polarization of light emitted in various spectral ranges was studied in two single crystals ZnS:Cu, Cl and ZnS:Ag, Cu, Al. The G-Cu, B-Cu and a small amount of S-A centers have been identified in the ZnS:Cu, Cl crystal by the spectral and polarization methods. The B-Ag band was found in the spectrum of the ZnS:Ag, Cu, Al crystal and its polarization properties investigated. This emission appears to be always polarized perpendicular to the [111]_c axis of the stacking faults independently of the polarization of the exciting light. The symmetry of the B-Ag center is not lower than that of the host lattice. Analogy with G-Cu centers suggests a model for the B-Ag center in which the polarization comes from the symmetry properties of the Ag²⁺ orbitals in the trigonal field of stacking faults.     

化学蒸汽输运法生长完整硫化锌单晶

用化学蒸汽输运法(VT),以碘为输运剂,在封闭的生长安瓶内,生长温度900℃,蒸发源与生长中的晶体间温差(△T)为5—6℃,在园锥形安瓶顶端以取向的单晶作子晶,可以生长成完整的ZnS单晶.在大管径的安瓶中对流控制的质量输运可以快速长成具有大晶面,中间有空隙的梨晶.用控制对流并适当降低△T值在低蒸气过饱和下可以生出1厘米3以上量级无孪生的单晶.ZnS单晶为立方结构,位错密度104·cm-2n型导电,电阻率8×1012Ω·cm.晶体具有蓝色CRL、PL及EL,用掺有锰的多晶在同样条件下可以生长出ZnS:Mn2+单晶.     

激活剂Cu和Mn对ZnS相变和微结构的影响

为了深入研究交流粉末电致发光粉的发光机理,增加对荧光粉激发能量的输入,提高它的发光亮度,研究这种材料的微结构极为必要。但要在原子尺度上研究材料的结构和成分,目前仍十分困难。至今,人们对电致发光机理还没有统一认识,不能不说与此有关。     

The discovery of a 2H–6H solid state transformation in ZnxCd1−xS single crystals

Single crystals of Zn_xCd_1?xS have been grown from the vapour phase at 1100°C in the presence of H₂S gas. X-ray diffraction studies of the as-grown crystals show that polytypism and stscking faults occur in Zn_xCd_1?xS crystals for x ? 0.94. It is observed that for 0.92 < x < 0.98 the 2H structure of Zn_xCd_1?xS crystals transforms to a disordered 6H structure on annealing in vacuum around 600°C. For 0.95 < x < 0.98 this 6H structure finally transforms to a disordered 3C structure on annealing further at higher temperatures around 800°C. The structural transformations occur through a non-random insertion of stacking faults, as revealed by the diffuse streak joining the X-ray diffraction maxima along the 10.L reciprocal lattice row. Experimental investigation of the diffuse intensity distribution, as recorded on a single crystal diffractometer from partially transformed single crystals, reveals that the mechanism of the transformation is very different from that reported for the same transformation in silicon carbide and cannot be described in terms of a single-parameter model of non-random deformation faulting.     

Preparation and Raman Spectrum of Rutile Single Crystals Using Floating Zone Method

With anatase-type titanium dioxide as the raw materials, the futile type titanium dioxide single crystal is prepared using the floating zone method. The results of XRD measurement show that the grown crystal is highly crystalline with a futile structure, which has orientation to the c-axis. The four Raman vibration characteristic peaks （143, 240, 450 and 610 cm^-1） at room temperature show that the crystalline structure of the single crystal is a typical futile phase, meanwhile a new Raman peak at around 690 cm^-1 is found. The results of the Raman measurement at various temperatures for the single crystal show that the Raman frequency shifts are different.     

MOCVD技术制备的ZnS:Mn电致发光薄膜结晶性及Mn2+分布

本文报导了用MOCVD技术制备的ZnS:Mn电致发光薄膜为立方晶相,结晶取向性好,颗粒大。从高倍率的扫描电镜拍摄的照片观察到薄膜的表面平滑。SIMS测量表明Mn2+在ZnS薄膜纵向分布均匀,但在两侧有起伏,可能的原因是在生长的初终阶段流量的突变使化合物的化学计量比偏离而产生位错,引起原子的局部堆积,并且由于初终阶段ZnS:Mn生长的衬底不同使原子堆积层厚度不同。     

Study of the wurtzite zinc-blende mixed-structured GaAs nanocrystals grown on Si (111) substrates

The structure and growth mechanism of GaAs nanocrystals grown on Si (111) substrates by using the molecular beam epitaxy method have been studied using transmission electron microscopy. The isolated nanocrystals had hexangular shapes, with aspect ratio ～1 and high symmetry. The crystal structure of the GaAs nanocrystals contains a mixture of a stable state of zinc-blende and a metastable state of wurtzite. A number of thin wurtzite layers parallel to the Si (111) plane are introduced into the zinc-blende GaAs nanocrystals as stacking faults. Formation of partial dislocations near the GaAs/Si interface and the small difference in the Gibbs free energy between the zinc-blende and wurtzite structures could cause formation of wurtzite as stacking faults in the zinc-blende structure